C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
10/2006
10/18/2006	EP1712661A1 Single crystalline diamond and producing method thereof
10/18/2006	EP1711650A2 Microfluidic protein crystallography techniques
10/18/2006	EP1711649A2 Directionally controlled growth of nanowhiskers
10/18/2006	EP1037704B2 Crystal growth
10/18/2006	CN1849417A Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
10/18/2006	CN1847471A Self-frequency doubling laser crystal Nd-doped calcium niobate
10/18/2006	CN1847470A Non-linear optical crystal calcium niobate
10/18/2006	CN1847469A Prepn process of Ce-doped lanthanum oxide scintillation crystal
10/18/2006	CN1280457C Wet-solid phase reaction preparation method for cadmium sulfide semiconductor nanocrystalline
10/18/2006	CN1280456C Method for production of low defect density silicon
10/18/2006	CN1280455C Low defect density silicon
10/18/2006	CN1280454C Low defect density, ideal oxygen precipitating silicon
10/17/2006	US7122847 Nitride semiconductor thin film and method for growing the same
10/17/2006	US7122082 Silicon wafer and manufacturing method thereof
10/12/2006	WO2006106875A1 Gallate single crystal, process for producing the same, piezoelectric device for high-temperature use and piezoelectric sensor for high-temperature use
10/12/2006	WO2006106745A1 Light-transparent material and process for producing the same
10/12/2006	WO2006106644A1 Si-DOPED GaAs SINGLE CRYSTAL INGOT AND PROCESS FOR PRODUCING THE SAME, AND Si-DOPED GaAs SINGLE CRYSTAL WAFER PRODUCED FROM SAID Si-DOPED GaAs SINGLE CRYSTAL INGOT
10/12/2006	WO2006105982A1 Method for producing a monocrystalline si wafer having an approximately polygonal cross-section and corresponding monocrystalline si wafer
10/12/2006	US20060228901 Growth method for nitride semiconductor epitaxial layers
10/12/2006	US20060228565 Polycrystalline silicon rod and method for processing the same
10/12/2006	US20060225775 Solar cell
10/12/2006	US20060225641 Method for the production of monocrystalline structures and component
10/12/2006	DE10057413B4 Verfahren zur direkten Synthese von Indiumphosphid A process for the direct synthesis of indium phosphide
10/11/2006	EP1710328A2 Process for producing SOI substrate and process for regeneration of layer transferred wafer in the production
10/11/2006	EP1709217A1 Process to produce a cu(in,ga)se2 single crystal powder and monograin membrane solarcell comprising this powder
10/11/2006	EP1709213A2 Systems and methods for synthesis of extended length nanostructures
10/11/2006	EP1708965A2 Doped lithium fluoride monochromator for x-ray analysis
10/11/2006	EP1371119A4 High repetition rate uv excimer laser
10/11/2006	EP1371117A4 High repetition rate excimer laser system
10/11/2006	EP1337695A4 Synthesis of colloidal nanocrystals
10/11/2006	CN1846461A Epitaxial organic layered structure and method for making
10/11/2006	CN1846017A Process for preparing a stabilized ideal oxygen precipitating silicon wafer
10/11/2006	CN1845881A Method for producing a piece made of sintered amorphous silica, and mold and slurry used in this method
10/11/2006	CN1844494A Method for preparing composite Ti:Al2O3 laser rod
10/11/2006	CN1844493A Method for synthesizing bionic silicon carbide crystal whisker
10/11/2006	CN1844492A Method for preparing nonstoichiometric ratio magnesia alumina spinel single crystals
10/11/2006	CN1844491A Nitriding process for lithium aluminate wafer
10/11/2006	CN1844488A Method for growth of zinc oxide monocrystal by falling aerated crucible method
10/11/2006	CN1844487A Method for growth of gallium arsenide monocrystal by gradient freeze method in horizontal three-temperature-zone furnace
10/11/2006	CN1844486A Process for microwave synthesis of rare earth compound nano rod
10/11/2006	CN1843912A Method for preparing crystal whisker of magnesium borate
10/11/2006	CN1843671A Fe nanowire and preparation method thereof
10/11/2006	CN1279220C Filtering and inertness of combustible dust in process waste gas
10/10/2006	US7118934 Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate
10/10/2006	US7118929 Process for producing an epitaxial layer of gallium nitride
10/10/2006	US7118813 used for coating epitaxial films in the fabrication of electronic and opto-electronic devices such as laser diodes, light emitting diodes, transistors and detectors
10/10/2006	US7118782 Method for manufacturing diamond coatings
10/10/2006	US7118627 Synthesis of colloidal PbS nanocrystals with size tunable NIR emission
10/10/2006	US7118626 section contains multiple capillary tubes that extend downward from a housing member through passageways contained in a stabilizing member; lower member contains multiple cavities that contain a precipitating solution, cryoprotectant solution and a scattering atom component
10/10/2006	US7118625 Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal
10/05/2006	WO2006104064A1 Substrate for growing gallium nitride and method for producing same
10/05/2006	WO2006104027A1 Magnesium oxide single crystal and method for producing same
10/05/2006	WO2006103837A1 Process for producing silicon single-crystal, annealed wafer and process for producing annealed wafer
10/05/2006	US20060220211 Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
10/05/2006	US20060219655 Ferroelectric thin-film production method, voltage-application etching apparatus, ferroelectric crystal thin-film substrate, and ferroelectric crystal wafer
10/05/2006	DE19904378B4 Verfahren zur Herstellung von Nitrid-Einkristallen A process for producing nitride crystals
10/05/2006	DE102005015472A1 Plant for synthesis and crystal growth of semiconductor using vertical gradient freeze crystal-growing ovens, comprises inside reaction chamber that has sublimation chamber and synthesis chamber connected over a mixing chamber and a valve
10/04/2006	EP1708254A1 Process for producing monocrystal thin film and monocrystal thin film device
10/04/2006	EP1707654A1 Method for manufacturing diamond single crystal substrate, and diamond single crystal substrate
10/04/2006	EP1706768A2 Process for producing photonic crystals
10/04/2006	EP1706523A1 Treatment of crystals in order to avoid light-induced modifications of the refraction index
10/04/2006	EP1272265B1 High temperature/high pressure colour change of diamond
10/04/2006	EP1272264B1 High temperature/high pressure colour change of diamond
10/04/2006	EP1004899B1 Scintillating substance and scintillating wave-guide element
10/04/2006	CN1842895A Substrate processing apparatus and method for manufacturing semiconductor device
10/04/2006	CN1842549A Catalyst support
10/04/2006	CN1840749A Silicon wafer and its heat treatment method
10/04/2006	CN1840748A 金刚石衬底及其制造方法 Diamond substrate and manufacturing method thereof
10/04/2006	CN1840747A Method for growing single-crystal zinc oxide film by using zinc oxide buffer layer
10/04/2006	CN1840480A Cerium oxide nano materials and its preparation and use
10/04/2006	CN1277902C Inorganic scintillator material
10/03/2006	US7115896 Semiconductor structures for gallium nitride-based devices
10/03/2006	US7115521 Epitaxial semiconductor deposition methods and structures
10/03/2006	US7115486 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
10/03/2006	US7115452 Method of making semiconductor device
10/03/2006	US7115241 Ultrahard diamonds and method of making thereof
10/03/2006	US7115213 ZnO-type compound film having a single crystal structure contains V, Cr, Fe, Co, Ni, Rh and/or Ru, each of which is alloyed with the compound and may also contain Ti, Mn, and/or Cu; exhibits desired ferromagnetic characteristics, such as ferromagnetic transition temperature
10/03/2006	US7115167 Method of growing a semiconductor multi-layer structure
09/2006
09/28/2006	WO2006100114A1 Process for the production of si by reduction of siclj with liquid zn
09/28/2006	WO2006099955A1 Device and method for the crystallisation of nonferrous metals
09/28/2006	US20060216945 Methods of depositing materials over semiconductor substrates
09/28/2006	US20060216914 Method of growing non-polar a-plane gallium nitride
09/28/2006	US20060216514 Diamond film-forming silicon and its manufacturing method
09/28/2006	US20060215981 Optical waveguide material and optical waveguide
09/28/2006	US20060214750 Single crystalline magnetic garnet and YIG device
09/28/2006	US20060214131 Ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof
09/28/2006	US20060213429 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate
09/28/2006	DE112004002299T5 Verlängerte Nanostruktur und zugehörige Vorrichtung Extended nanostructure and associated apparatus
09/28/2006	DE10250822B4 Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium A method for producing a readily volatile impurity doped silicon monocrystal
09/28/2006	DE102005013831A1 Siliciumscheibe und Verfahren zur thermischen Behandlung einer Siliciumscheibe Silicon wafer and method for heat treating a silicon wafer
09/28/2006	DE102005013410A1 Vorrichtung und Verfahren zum Kristallisieren von Nichteisenmetallen Apparatus and method for crystallizing non-ferrous metals
09/28/2006	CA2601333A1 Process for the production of si by reduction of sicl4 with liquid zn
09/27/2006	EP1704599A1 Method for treating powder particles
09/27/2006	CN1839488A Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head
09/27/2006	CN1837422A Self-activating laser crystal of LiNd(WO4)2, its preparation method and use
09/27/2006	CN1837421A Neodymium doped LiGd(MoO4)2 laser crystal, its preparation method and use
09/27/2006	CN1837420A Pyroelectric single crystal material of PMN-PT and application thereof
09/27/2006	CN1837419A Ytterbium doped Y0.8LaCa4O(BO3)3 laser crystal, its preparation method and use
09/27/2006	CN1837418A Ytterbium doped Ca3La2(BO3)4 laser crystal, its preparation method and use
09/27/2006	CN1837417A Poly-seed crystal preparation method for YBaCuO single domain superconductor

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