Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
10/2007
10/31/2007EP1704599B1 Method for treating powder particles
10/31/2007CN101065320A Systems and methods for synthesis of gallium nitride powders
10/31/2007CN101064258A Method of forming highly orientated silicon film, method of manufacturing three-dimensional semiconductor device, and three-dimensional semiconductor device
10/31/2007CN101063233A Equipment for growth of horizontal chromium doped semi-insulation gallium arsenide
10/31/2007CN101063232A Lanthanum titanates single-crystal and upgrowth technology thereof
10/31/2007CN101063231A Chromium doped molybdic acid aluminum potassium tunable laser crystal
10/31/2007CN101063230A Double-doped lithium niobate crystsal and method for making same
10/31/2007CN101063229A Neodymium doped lithium barium niobate laser crystal and method for making same and use
10/31/2007CN101063228A Garnet laser crystal containing scandium of high efficiency antiradiation Yb3+ sensitizing Er3+
10/31/2007CN101063227A Technique and arrangement for low dislocations germanium mono-crystal with crucible lowering down czochralski method
10/31/2007CN101063226A Electron tubes type equipment for preparing nano material
10/31/2007CN101063225A Single crystal gan substrate, method of growing same and method of producing same
10/31/2007CN101063224A Silicon rod automatically ingot pulling mechanism
10/31/2007CN101063223A Preparation method of carbon/carbon thermal insulation cover for monocrystalline silicon draw machines
10/30/2007US7288830 III-V nitride semiconductor substrate and its production method
10/30/2007US7288791 Epitaxial wafer and method for manufacturing method
10/30/2007US7288430 Method of fabricating heteroepitaxial microstructures
10/30/2007US7288151 Method of manufacturing group-III nitride crystal
10/30/2007US7288125 Crystal growing kit and method
10/30/2007CA2417936C Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby
10/25/2007WO2007121270A1 Epitaxial growth of iii-nitride compound semiconductors structures
10/25/2007WO2007119433A1 Group iii-v nitride layer and method for producing the same
10/25/2007WO2007119319A1 Gallium nitride material and method for producing same
10/25/2007US20070249066 Ferroelectric rare-earch manganese-titanium oxides
10/25/2007US20070248522 Material, particularly for an optical component for use in microlithography, and method for making a blank from the material
10/25/2007DE10359131B4 Hochtemperatursupraleitender Körper und Verfahren zu dessen Herstellung High-temperature superconductive body and process for its preparation
10/25/2007DE10248962B4 Verfahren zur Herstellung einer Hochtemperatur-Supraleiterschicht A process for producing a high-temperature superconductor layer
10/25/2007DE102006018711A1 Werkstoff, insbesondere für ein optisches Bauteil zum Einsatz in der Mikrolithographie und Verfahren zur Herstellung eines Formkörpers aus dem Werkstoff Material, in particular for an optical component for use in microlithography and method for producing a shaped body from the material
10/24/2007EP1846596A2 Method of making substitutionally carbon-highly doped crystalline si-layers by cvd
10/24/2007EP1846595A1 Selective deposition of silicon-containing films
10/24/2007EP1846157A1 Method for synthesis of carbon nanotubes
10/24/2007EP1476592A4 Crystal forming apparatus and method for using same
10/24/2007EP1190120A4 Compound gas injection system and methods
10/24/2007CN101061570A Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions
10/24/2007CN101061263A Magnetic garnet single crystal, optical device using same and method for producing single crystal
10/24/2007CN101060102A Nitride semiconductor substrate, method of making the same and epitaxial substrate for nitride semiconductor light emitting device
10/24/2007CN100345255C Vapor phase growth method for Al-containing III-V group compound semiconductor, and method and device for producing Al-containing III-V group compound semiconductor
10/24/2007CN100344802C Process for preparing lead sulfur family compound semiconductor single crystal
10/24/2007CN100344801C Method for producing silicon slice and monocrystalline silicon
10/24/2007CN100344800C Growth of tricesium borate monocrystal cosolvent
10/24/2007CN100344396C Process and apparatus for manufacturing a turbine component, turbine components and use of apparatus
10/23/2007CA2369962C Method and apparatus for continuous crystal pulling
10/18/2007WO2007117034A1 Production methods of semiconductor crystal and semiconductor substrate
10/18/2007WO2007117033A1 Apparatus for producing group iii nitride based compound semiconductor
10/18/2007WO2007117032A1 Method and apparatus for producing group iii nitride based compound semiconductor
10/18/2007WO2007116600A1 Base substrate for epitaxial diamond film, method for manufacturing the base substrate for epitaxial diamond film, epitaxial diamond film manufactured by the base substrate for epitaxial diamond film, and method for manufacturing the epitaxial diamond film
10/18/2007WO2007116315A1 Method of manufacturing a silicon carbide single crystal
10/18/2007WO2007091920A3 A method of growing semiconductor heterostructures based on gallium nitride
10/18/2007US20070243695 Method for Producing Semiconductor Wafers and a System for Determining a Cut Position in a Semiconductor Ingot
10/18/2007US20070241481 Method for the Growth of Semiconductor Ribbons
10/18/2007US20070241284 Scintillator Material Based on Rare Earth With a Reduced Nuclear Background
10/18/2007US20070240633 One hundred millimeter single crystal silicon carbide wafer
10/18/2007US20070240630 One hundred millimeter single crystal silicon carbide water
10/18/2007DE4320128B4 Monotyp-Lichtwellenleiter Mono-type optical waveguide
10/18/2007DE102006017622A1 Manufacturing multi-crystalline silicon comprises placing detachable upper section at an upper edge of crucible furnace to build container structure, filling the container structure with silicon filling, and heating the container structure
10/18/2007DE102006017621A1 Crystallization device for production of single- or multi crystalline silicon by vertical-gradient-freeze-method, comprises stable crucible, and heating device for melting the silicon and exhibiting jacket heater for rejection of heat flow
10/17/2007EP1483428B1 Diamond electrode
10/17/2007EP1466026B1 Superelastic element made of a copper alloy and method for imparting and preserving a curvature of a given geometry
10/17/2007CN200961153Y Processing system for crystal growth raw material
10/17/2007CN101054730A Controllable doping method for Si3N4 single-crystal low-dimension nano material
10/17/2007CN101054729A Preparation method of organic macromolecule nano-tube
10/17/2007CN101054728A Molybdate crystal for laser and excited Raman frequency shift and preparing method and use thereof
10/17/2007CN101054727A Non-linear optics crystal yttrium calcium vanadate and preparing method and use thereof
10/17/2007CN101054726A Magnetic garnet single crystal and optical element using the same
10/17/2007CN101054725A Method for growing lithium aluminate crystal
10/17/2007CN101054724A Method of preparing barium yttrium borate and barium yttrium borate crystal and use thereof
10/17/2007CN101054723A Method for growing R-surface sapphire crystal
10/17/2007CN101054722A Purification and preparation method for solar energy polycrystalline silicon raw material
10/17/2007CN101054721A Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT
10/17/2007CN101054720A Method of manufacturing substrates for the growth of single crystal diamond
10/17/2007CN101054719A C-60 nanocrystalline and preparation method thereof
10/17/2007CN101054717A Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
10/17/2007CN100343424C Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material
10/16/2007US7282190 Silicon layer production method and solar cell production method
10/16/2007US7282161 Inorganic scintillator
10/16/2007US7282095 Silicon single crystal pulling method
10/11/2007WO2007112719A1 Treatment of crystals for the prevention of optical damage
10/11/2007WO2007112592A1 Method for purifying silicon
10/11/2007US20070235653 Manufacture of Cadmium Mercury Telluride on Patterned Silicon
10/11/2007US20070234949 Atomic layer deposited titanium-doped indium oxide films
10/11/2007DE102006016201A1 Behandlung von Kristallen zur Vermeidung optischen Schadens Treatment of crystals to avoid optical damage
10/11/2007CA2648288A1 Method for purifying silicon
10/10/2007EP1842942A2 GaN crystal substrate
10/10/2007EP1842941A1 Method for forming a group III nitride material on a silicon substrate
10/10/2007EP1842940A1 Method for forming a group III nitride material on a silicon substrate
10/10/2007EP1842595A1 Method and device for comminuting and sorting polysilicon
10/10/2007EP1841902A1 Method for the production of c plane-oriented gan substrates or alxga1-xn substrates
10/10/2007EP1532297B1 Quartz glass crucible for pulling up silicon single crystal and method for producing the same
10/10/2007CN101053075A Diamond semiconductor element and method for manufacturing same
10/10/2007CN101052754A Method of surface reconstruction for silicon carbide substrate
10/10/2007CN101052753A Method for manufacturing porous silica crystal
10/10/2007CN101050548A Crystal growth way of crystal pulling method for tantalate
10/10/2007CN101050547A Method for developing potassium fluoroboric beryllium acid / sodium crystal through hydrothermal method
10/10/2007CN101050546A Method and equipment for synthesizing polycrystal of phosphor, germanium and zinc
10/10/2007CN101050545A Method for developing aluminum nitride crystal in large size through flow of plasma flame
10/10/2007CN101050543A Method for developing rubidium fluoroboric beryllium acid / cesium monocrystal through hydrothermal method
10/10/2007CN100342503C Annealed wafer and annealed wafer manufacturing method
10/10/2007CN100342495C Fabrication method for polycrystalline silicon thin film and apparatus using the same
10/10/2007CN100341788C Method for preparing doped zinc oxide double crystal nano belt by sol-gel
10/10/2007CN100341787C Cerium oxide nano materials and its preparation and use