Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
08/2007
08/22/2007CN1333268C Optical lens, condenser lens, optical pickup, and optical recording/reproducing apparatus
08/22/2007CN1333117C Method for developping directionally aligning zinc oxide nanometer rod array on silicon substrate
08/22/2007CN1333116C Crucible for the growth of silicon crystal and process for the growth of silicon crystal
08/22/2007CN1333115C Technical method for drawing silicon single-crystal
08/22/2007CN1333112C Process for preparing silicon dioxide colloid crystal with variable lattice constant
08/22/2007CN101023028A Ultratough cvd single crystal diamond and three dimensional growth thereof
08/21/2007USRE39778 Method of preparing group III-V compound semiconductor crystal
08/21/2007US7259409 Thin film device and its fabrication method
08/21/2007US7259108 Methods for fabricating strained layers on semiconductor substrates
08/21/2007US7258807 Controlled growth of gallium nitride nanostructures
08/21/2007US7258745 Method for fabricating hafnia films
08/21/2007US7258741 System and method for producing synthetic diamond
08/21/2007US7258739 Process for producing epitaxial silicon wafer and silicon wafer produced by process thereof
08/16/2007WO2007091920A2 A method of growing semiconductor heterostructures based on gallium nitride
08/16/2007WO2007091834A1 High-pressure fluidized bed reactor for preparing granular polycrystalline silicon
08/16/2007WO2007064247A3 METHOD FOR GROWING CD1-x ZnxTe (CZT) MONOCRYSTALS
08/16/2007WO2007051481A3 Use of quasi-one-dimensional polymers based on the metal-chalcogen-halogen system
08/16/2007US20070190757 Vapor phase growth method
08/16/2007US20070190755 Substrate for growing Pendeo epitaxy and method of forming the same
08/16/2007US20070190248 Thin metal films by atomic layer deposition: tungsten nucleation layer over a silicon wafer; copper film from CuCl and triethylboron; vapor phase pulses in inert gas
08/16/2007US20070189953 Method for obtaining carbon nanotubes on supports and composites comprising same
08/16/2007DE10009876B4 Verfahren zum Bilden eines einkristallinen Films A method for forming a single-crystal film
08/15/2007EP1818430A1 Iii group nitride single crystal and method for preparation thereof, and semiconductor device
08/15/2007EP1818429A2 Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate
08/15/2007EP1817440A1 Method and device for the deposition of gallium nitrite layers on a sapphire substrate and associated substrate holder
08/15/2007EP1817257A1 Process of preparation of synthetic fire opal
08/15/2007EP1196646B1 Dendrite thickness control system for growing silicon ribbon
08/15/2007CN1332078C Polarization method for lithium niobate
08/15/2007CN1332077C Lithium niobate substrate and manufacturing method thereof
08/15/2007CN1332076C Non-linear optical crystal material potassium pentavanadate
08/15/2007CN1332075C Non-linear optical crystal of cesium rubidium borate, its growth and use
08/15/2007CN1332074C Strontium-gadolinium borate laser crystal and its preparation method
08/15/2007CN1332071C Silica glass crucible
08/15/2007CN1332070C Structure of initiating terminal in directional solidification in method of seed crystal, and application
08/15/2007CN101017751A High-performance semiconductor nanometer silicon field electronic emission material and its preparation method
08/15/2007CN101017720A A preparation method for the indoor temperature diluted magnetic semiconductor material of cobalt-doped TiO2
08/15/2007CN101016649A Column-shape potassium hesatitanate crystal and synthetic method thereof
08/15/2007CN101016648A Transition metal doping zinc oxide crystal and hydrothermal growth method for the same
08/15/2007CN101016155A Edulcoration method for boiler bottom flavoring generated from silicon monocrystal growth by straight dragging method
08/14/2007US7256110 Crystal manufacturing method
08/14/2007US7255745 Iridium oxide nanowires and method for forming same
08/14/2007US7255744 Low-resistivity n-type semiconductor diamond and method of its manufacture
08/14/2007US7255743 Method of making synthetic gems comprising elements recovered from remains of a species of the kingdom animalia
08/14/2007US7255742 Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device
08/14/2007US7255741 Process for the isolation of high purity crystalline citalopram base
08/14/2007US7255740 Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements
08/09/2007WO2007088958A1 Substrate for growing of compound semiconductor and method of epitaxial growth
08/09/2007WO2007088754A1 Epitaxial wafer manufacturing method
08/09/2007US20070184567 Method for material growth of gan-based nitride layer
08/09/2007US20070183964 Nano-fiber or nano-tube comprising v group transition metal dichalcogenide crystals, and method for preparation thereof
08/09/2007US20070182038 Method for patterning self-assembled colloidal photonic crystals and method for fabricating 3-dimensional photonic crystal waveguides of an inverted-opal structure using the patterning method
08/09/2007US20070181058 Protein crystallization apparatus, method of protein crystallization, protein crystallizing agent and process for preparing the same
08/08/2007EP1816241A1 Pr-CONTAINING SINGLE CRYSTAL FOR SCINTILLATOR, PROCESS FOR PRODUCING THE SAME, RADIATION DETECTOR AND INSPECTION APPARATUS
08/08/2007EP1816240A1 Hexagonal wurtzite type single crystal, process for producing the same, and hexagonal wurtzite type single crystal substrate
08/08/2007EP1816239A2 Method of producing optical element
08/08/2007EP1816238A1 Preferential hardening of signle crystal blades
08/08/2007EP1815042A2 Diamond coated surfaces
08/08/2007EP1815035A2 Nickel-based superalloy
08/08/2007EP1461286B1 Differential stress reduction in thin films
08/08/2007CN2931505Y Apparatus for eliminating slip line and high stress region in silicon gas phase epitaxial layer
08/08/2007CN1331235C N-type semiconductor diamond producing method and semiconductor diamond
08/08/2007CN1330800C Acicular silicon crystal and process for producing the same
08/08/2007CN1330799C Fluorine blended tungstate laser crystal and its grownig method
08/08/2007CN1330798C System and method for growth of lithium niobate crystal with rough chemical ratio by melt injection process
08/08/2007CN1330797C A method to increase device-to-device uniformity for polycrystalline thin-film transistors by deliberately mis-aligning the microstructure relative to the channel region
08/08/2007CN1330796C Method of synthetizing two kinds of different shaped silicon carbid nano wire
08/08/2007CN101014615A Crystal structure of house dust mite allergen der p1
08/07/2007US7253499 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer
08/07/2007US7253014 Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
08/07/2007US7252713 Mesoporous glass as nucleant for macromolecule crystallisation
08/07/2007US7252712 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
08/07/2007CA2453922C Oxide high-critical temperature superconductor acicular crystal and method for producing the same
08/02/2007WO2007065018A3 Doped aluminum nitride crystals and methods of making them
08/02/2007WO2007056745A3 Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
08/02/2007US20070178676 Method of forming semiconductor multi-layered structure
08/02/2007US20070178671 GaN bulk growth by Ga vapor transport
08/02/2007US20070178032 Transparent ferromagnetic compound containing no magnetic impurity such as transition metal or rare earth metal and forming solid solution with element having imperfect shell, and method for adjusting ferromagnetic characteristics thereof
08/02/2007US20070175383 Process for producing single crystal of gallium-containing nitride
08/02/2007DE102006002682A1 Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe Apparatus and method for producing a single crystal, single crystal and semiconductor wafer
08/01/2007EP1814149A1 METHOD FOR ABRASING GaN SUBSTRATE
08/01/2007EP1812618A2 Cvd doped structures
08/01/2007EP1812335A1 Production of core/shell semiconductor nanocrystals in aqueous solutions
08/01/2007EP1215730B9 SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER
08/01/2007CN1329955C Method of preparing high quality non-polar GaN self-support substrate
08/01/2007CN1329954C Process for producing an epitaxial layer of gallium nitride and photoelectric parts including it
08/01/2007CN1329563C Tech. for high temp. treating potassium dideuteride phosphate crystal growing solution
08/01/2007CN1329562C Method for preparing monodisperse germanium nanocrystal by thermolysis
08/01/2007CN1329560C Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
08/01/2007CN1329559C Suspension crucible for growth of lithium niobate crystal with near stoichiometric ratio and its growth process
08/01/2007CN101010780A Systems and methods for nanowire growth and harvesting
08/01/2007CN101010453A Method for preparing crystal of nitride of metal belonging to group 13 of periodic table and method for manufacturing semiconductor device using the same
08/01/2007CN101009350A Nitride-based group ó¾-ó§ semiconductor substrate and fabrication method therefor, and nitride-based group ó¾-ó§ light-emitting device
08/01/2007CN101009228A Height tropism zinc oxide nano column array ultrasonic auxiliary water solution preparation method
08/01/2007CN101008106A Method for in situ growth for preparing semiconductor nanotube
08/01/2007CN101008099A Method for producing nanowires using a porous template
08/01/2007CN101008080A Film-forming device
07/2007
07/31/2007US7250648 Ferroelectric rare-earth manganese-titanium oxides
07/31/2007US7250609 Scintillator crystals, method for making same, use thereof
07/31/2007US7250081 Methods for repair of single crystal superalloys by laser welding and products thereof
07/26/2007WO2007083768A1 Semiconductor light emitting element, group iii nitride semiconductor substrate and method for manufacturing such group iii nitride semiconductor substrate