| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 08/30/2006 | EP1476249B1 Improved pressure vessel |
| 08/30/2006 | CN1826694A Nanowhiskers with PN junctions and methods of fabricating thereof |
| 08/30/2006 | CN1825500A Brass ore type material for p type transparent conductor and preparing process |
| 08/30/2006 | CN1824850A Technique for growing Cd-Zn-Te crystal |
| 08/30/2006 | CN1824849A Silicon substrate III family nitride epitaxial growth |
| 08/30/2006 | CN1824848A Process for producing a silicon single crystal with controlled carbon content |
| 08/30/2006 | CN1272905C Surface sound wave device and used piezoelectric base unit |
| 08/30/2006 | CN1272639C Scintillator panel |
| 08/30/2006 | CN1272475C Method and equipment for producing single crystal of oxides |
| 08/30/2006 | CN1272244C B6O nanowire and crystal whisker structure and its preparation method |
| 08/29/2006 | US7097920 Group III nitride based semiconductor substrate and process for manufacture thereof |
| 08/29/2006 | US7097902 precipitation of organic or organometallic compounds as crystals on substrates, using surfactants or dispersants within carrier fluids comprising compressed carbon dioxide; depressurization |
| 08/29/2006 | US7097718 Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects |
| 08/29/2006 | US7097707 GaN boule grown from liquid melt using GaN seed wafers |
| 08/24/2006 | WO2006088261A1 METHOD FOR FORMING InGaN LAYER AND SEMICONDUCTOR DEVICE |
| 08/24/2006 | WO2006087982A1 Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal |
| 08/24/2006 | WO2006028576A3 Determination of a phosphorylation site in ppiase domain of pin1 and uses therefor |
| 08/24/2006 | WO2006009802A3 A melter assembly and method for charging a crystal forming apparatus with molten source material |
| 08/24/2006 | US20060189018 P-n heterojuction structure of zinc oxide-based nanorod and semiconductor thin film, preparation thereof, and nano-device comprising same |
| 08/24/2006 | US20060185583 Single crystal diamond grown by microwave plasma chemical vapor deposition and annealed at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa. |
| 08/24/2006 | US20060185577 Single crystal of highly purified hexagonal boron nitride capable of far ultraviolet high-luminance light emission, process for producing the same, far ultraviolet high-luminance light emitting device including the single crystal, and utilizing the device, solid laser and solid light emitting unit |
| 08/24/2006 | DE112004001947T5 Vorrichtung zum Herstellen eines Einkristallhalbleiters Apparatus for manufacturing a semiconductor single crystal |
| 08/24/2006 | DE102005006186A1 Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt A process for preparing a single crystal of silicon with a controlled carbon content |
| 08/24/2006 | DE10120730B4 Verfahren und Vorrichtung zur Messung der Phasengrenze Method and apparatus for measuring the phase boundary |
| 08/23/2006 | EP1693905A1 Process of manufacturing biaxial oriented coatings and apparatus therefore |
| 08/23/2006 | EP1693488A1 Optical material, optoelectronic part and optoelectronic appliance |
| 08/23/2006 | EP1184897B1 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
| 08/23/2006 | EP1049813B1 Cvd reactor and process |
| 08/23/2006 | EP0859879B2 A method for epitaxially growing objects and a device for such a growth |
| 08/23/2006 | CN1823400A Nitride semiconductor element and method for manufacturing thereof |
| 08/23/2006 | CN1823183A Method for producing crystal of fluoride |
| 08/23/2006 | CN1823008A Tough diamonds and method of making thereof |
| 08/23/2006 | CN1821453A Semiconductive GaAs wafer and method of making the same |
| 08/23/2006 | CN1271454C Hard magnetic garnet material, method for mfg. single crystal film, Faraday rotator, its mfg. method and use |
| 08/23/2006 | CN1271252C Process for preparing polysilicon using exothermic reaction |
| 08/23/2006 | CN1271251C Method of preparing ZnO crystal whisker adopting atmosphere open type MOCVD and apparatus therefor |
| 08/23/2006 | CN1271250C Method of preparing one-dimensional array material adopting atmosphere open type MOCVD and apparatus therefor |
| 08/22/2006 | US7094475 MCrAlY-coating |
| 08/22/2006 | US7094288 Method for producing a positively doped semiconductor with large forbidden band |
| 08/17/2006 | WO2006085903A1 Method of growing semiconductor nanowires with uniform cross-sectional area using chemical vapor deposition |
| 08/17/2006 | WO2005122267A3 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
| 08/17/2006 | WO2005075716A8 Doped lithium fluoride monochromator for x-ray analysis |
| 08/17/2006 | US20060180076 Vapor deposition apparatus and vapor deposition method |
| 08/17/2006 | DE112004001230T5 Züchtungsverfahren für Nitridhalbleiter-Epitaxieschichten The growth method of nitride semiconductor epitaxial layers |
| 08/16/2006 | EP1690284A2 Method of production of silicon carbide single crystal |
| 08/16/2006 | EP1689916A1 Scintillation substances (variants) |
| 08/16/2006 | EP1689668A2 Nanostructures formed of branched nanowhiskers and methods of producing the same |
| 08/16/2006 | EP1689582A1 Novel polymer films and textile laminates containing such polymer films |
| 08/16/2006 | EP1689553A2 Methods for repair of single crystal superalloys by laser welding and products thereof |
| 08/16/2006 | CN1820353A Growth method of nitride semiconductor epitaxial layers |
| 08/16/2006 | CN1818153A Production of nanometer wire with cadmium sulfide |
| 08/16/2006 | CN1818152A Method for SiC whisker growth |
| 08/16/2006 | CN1818151A Method for growing tantalic acid lithium in diameter of 5-inch single crystal |
| 08/16/2006 | CN1818150A Production of single-crystal nano meter four-phase rod with lead zirconate titanate and perof skite |
| 08/16/2006 | CN1818149A Production of high-purity lithium tetraborate crystal by industrial lithium hydroxide and boric acid |
| 08/16/2006 | CN1270000C Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation |
| 08/16/2006 | CN1269999C Process for mixing oxygen into gallium nitride crystal and oxygen-mixed n-type gallium nitride single crystal plate |
| 08/16/2006 | CN1269998C Method for preparing fluorinion doped lead tungstate scintillation crystal |
| 08/16/2006 | CN1269997C Large size non-linear optic crystal of boron phosphate, flux growth method |
| 08/16/2006 | CN1269765C Electrophoretically redensified SiO2, moulded body, method for the production and use thereof |
| 08/16/2006 | CN1269749C Method for the production of a shaped silica glass body |
| 08/15/2006 | US7091514 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices |
| 08/15/2006 | US7091129 Atomic layer deposition using photo-enhanced bond reconfiguration |
| 08/10/2006 | WO2006083909A2 Method of making substitutionally carbon-highly doped crystalline si-layers by cvd |
| 08/10/2006 | WO2006083821A1 Selective deposition of silicon-containing films |
| 08/10/2006 | WO2006083485A1 Labware for high-throughput free-interface diffusion crystalliazation |
| 08/10/2006 | WO2006083169A1 Method for charging a crucible with solar grade silicon |
| 08/10/2006 | WO2006082746A1 FILM OF SEMICONDUCTOR SINGLE CRYSTAL OF n-TYPE (100) FACE ORIENTED DIAMOND DOPED WITH PHOSPHORUS ATOM AND PROCESS FOR PRODUCING THE SAME |
| 08/10/2006 | WO2006082467A1 Substrate for crystal growing a nitride semiconductor |
| 08/10/2006 | WO2006082325A1 Method for synthesis of carbon nanotubes |
| 08/10/2006 | WO2006082259A1 Personalised synthetic diamond of different colours, obtained from (living or dead) human or animal keratin and production method thereof |
| 08/10/2006 | WO2005056813A3 Microfluidic protein crystallography techniques |
| 08/10/2006 | US20060178000 Epitaxial growth process |
| 08/10/2006 | US20060177962 Process for producing n-type semiconductor diamond and n-type semiconductor diamond |
| 08/10/2006 | US20060174826 Tantalum based crucible |
| 08/10/2006 | US20060174822 Crucilble and method of growing single crytal by using crucible |
| 08/10/2006 | US20060174820 Method for producincg silicon wafer and silicon wafer |
| 08/10/2006 | US20060174819 Method for producing single crystal and single crystal |
| 08/10/2006 | US20060174815 Process for manufacturing a gallium rich gallium nitride film |
| 08/10/2006 | US20060174651 Mehtod for producing quartz glass crucible for use in pulling silicon single crystal and quartz glass crucible produced by said method |
| 08/10/2006 | CA2596558A1 Method for synthesis of carbon nanotubes |
| 08/09/2006 | EP1688519A2 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
| 08/09/2006 | EP1558795B1 Method and apparatus for growing multiple crystalline ribbons from a single crucible |
| 08/09/2006 | EP1356139B1 Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core |
| 08/09/2006 | EP1149184B1 Method and system for producing semiconductor crystals using temperature management |
| 08/09/2006 | CN1814864A Method for preparing nano four-needle-shape zinc oxide crystal whisker |
| 08/09/2006 | CN1814863A Method for flux growth of Na3La9B8027 |
| 08/09/2006 | CN1269185C 半导体晶片及其制造方法 And a method of manufacturing a semiconductor wafer |
| 08/09/2006 | CN1268953C Optical device and producing method thereof |
| 08/08/2006 | US7087114 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate |
| 08/08/2006 | US7087112 Nitride ceramics to mount aluminum nitride seed for sublimation growth |
| 08/03/2006 | WO2006081348A1 Gallium nitride light emitting devices on diamond |
| 08/03/2006 | WO2006080586A1 METHOD FOR FORMING GaN FILM, SEMICONDUCTOR DEVICE, METHOD FOR FORMING GROUP III NITRIDE THIN FILM, AND SEMICONDUCTOR DEVICE HAVING GROUP III NITRIDE THIN FILM |
| 08/03/2006 | WO2006080264A1 Method of selective etching and silicon single crystal substrate |
| 08/03/2006 | US20060172513 Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type iii-v group compound semiconductor layer, method for growing semiconductor layer, and method for growing layer |
| 08/03/2006 | US20060170000 Nitride-based compound semiconductor substrate and method for fabricating the same |
| 08/03/2006 | DE102005003884A1 Verfahren zur Herstellung von c-plane orientierten GaN-oder AlxGa1-xN-Substraten A process for producing c-plane oriented GaN or Al x Ga 1-x N-substrates |
| 08/02/2006 | EP1686202A1 Single crystal of highly purified hexagonal boron nitride capable of far ultraviolet high-luminance light emission, process for producing the same, far ultraviolet high-luminance light emitting device including the single crystal, and utilizing the device, solid laser and solid light emitting unit |
| 08/02/2006 | EP1685282A2 Crystal growth devices and systems, and methods for using same |
| 08/02/2006 | EP1684973A2 Vicinal gallium nitride substrate for high quality homoepitaxy |