| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 06/13/2007 | CN1978715A Method for preparing titanate lamella |
| 06/13/2007 | CN1978714A Method for cracking source oven molecular beam epitaxial indium phosphide using solid-state phosphorus |
| 06/13/2007 | CN1978713A Method for growing ZnO mono-crystalline by closed pipe chemical vapour transmission |
| 06/13/2007 | CN1321229C Flux growing method of R2CaB10O19 monocrystal |
| 06/13/2007 | CN1321228C Boron aluminate, non-linear optic crystal of boron aluminate, growth method and usage |
| 06/13/2007 | CN1321227C Boron doped diamond |
| 06/12/2007 | US7230282 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer |
| 06/12/2007 | US7230274 Reduction of carrot defects in silicon carbide epitaxy |
| 06/12/2007 | US7229926 Method of manufacturing nitride substrate for semiconductors, and nitride semiconductor substrate |
| 06/12/2007 | US7229693 Low defect density, ideal oxygen precipitating silicon |
| 06/12/2007 | US7229499 Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer |
| 06/12/2007 | US7229497 Having a narrow and controllable size distribution and are prepared by a continuous flow method involving heating a mixture of an M-source and an X donor in a fluid in a reaction zone to a growth temperature andcooling the mixture below the growth temperature to stop growth of the nanocrystals. |
| 06/12/2007 | US7229495 Silicon wafer and method for producing silicon single crystal |
| 06/12/2007 | US7229494 Production method for compound semiconductor single crystal |
| 06/12/2007 | US7229493 3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same |
| 06/07/2007 | WO2007064247A2 METHOD FOR GROWING CD1-x ZnxTe (CZT) MONOCRYSTALS |
| 06/07/2007 | WO2007063996A1 Quartz glass crucible, process for producing the same, and use |
| 06/07/2007 | WO2007063898A1 Method and apparatus for crystallization of protein, and apparatus for protein crystallization treatment |
| 06/07/2007 | WO2007063637A1 Process for producing polycrystalline bulk semiconductor |
| 06/07/2007 | US20070128844 Non-polar (a1,b,in,ga)n quantum wells |
| 06/07/2007 | US20070128099 Silicon feedstock for solar cells |
| 06/06/2007 | EP1793020A1 A method and mould for casting articles with a pre-determined crystalline orientation |
| 06/06/2007 | EP1792348A1 Method for application of a zinc sulphide buffer layer to a semiconductor substrate by means of chemical bath deposition in particular on the absorber layer of a chalcopyrite thin-film solar cell |
| 06/06/2007 | EP1791862A1 Crystal structure of house dust mite allergen der p 1 |
| 06/06/2007 | CN1977359A 氮化镓晶圆 GaN wafers |
| 06/06/2007 | CN1977064A Heat treatment method for monocrystalline or directionally solidified structural components |
| 06/06/2007 | CN1974890A Nanometer porous tungsten trioxide material and its prepn and application |
| 06/06/2007 | CN1974889A Potassium hexatitanate whisker and its prepn process |
| 06/06/2007 | CN1974888A Zr dopped lithium niobate crystal |
| 06/06/2007 | CN1974887A Prepn process of nanometer wire and nanometer rod of monocrystalline perovskite type compound oxide La0.6Sr0.4CoO3 |
| 06/06/2007 | CN1974886A Prepn process of nanometer rod and micron block of monocrystalline perovskite type oxide La1-xSrxMnO3 |
| 06/06/2007 | CN1974885A Low temperature process of preparing RE borate crystal with oxide as precursor |
| 06/06/2007 | CN1974884A Prepn process of nanometer monocrystalline zinc oxide film material |
| 06/06/2007 | CN1974883A Prepn process of nanometer silicon crystal |
| 06/06/2007 | CN1974881A Prepn process of cubic monocrystalline magnesia particle with tetragonal and hexagonal burrow-shaped mesopores |
| 06/06/2007 | CN1974401A Epitaxial growth process and apparatus of nanometer zinc oxide crystal based on liquid crystal mask |
| 06/06/2007 | CN1974383A Production process for high purity polycrystal silicon and production apparatus for the same |
| 06/06/2007 | CN1320176C Production method of magnetic modified nanometer zinc oxide whiskers |
| 06/06/2007 | CN1320175C Method for preparing zinc oxide hollow four-foot whisker beam |
| 06/06/2007 | CN1320173C Process for producing single crystal of compound semiconductor and crystal growing apparatus |
| 06/05/2007 | US7227189 Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device |
| 06/05/2007 | US7226507 Method for producing single crystal and single crystal |
| 06/05/2007 | US7226506 Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer |
| 05/31/2007 | WO2007062250A2 Large aluminum nitride crystals with reduced defects and methods of making them |
| 05/31/2007 | WO2007060890A1 METALLIC ELECTROCONDUCTIVE 12Cao·7Al2O3 COMPOUND AND PROCESS FOR PRODUCING THE SAME |
| 05/31/2007 | WO2006108191A8 Seventy five millimeter silicon carbide wafer with low warp, bow, and ttv |
| 05/31/2007 | WO2006096201A3 Method for preparing group iv nanocrystals with chemically accessible surfaces |
| 05/31/2007 | WO2006053826A3 Nickel-based superalloy |
| 05/31/2007 | US20070122337 working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment; lithium tantalate having volume resistivity which has been controlled within the range of from 1010 to 1013 Omega cm. |
| 05/31/2007 | US20070119367 Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
| 05/31/2007 | US20070119365 Silicon single crystal pulling method |
| 05/30/2007 | EP1790759A1 NITRIDE SEMICONDUCTOR SINGLE CRYSTAL INCLUDING Ga, METHOD FOR MANUFACTURING THE SAME, AND SUBSTRATE AND DEVICE USING THE CRYSTAL |
| 05/30/2007 | EP1790757A1 Susceptor |
| 05/30/2007 | CN1973359A Gallium oxide single crystal composite, process for producing the same, and process for producing nitride semiconductor film utilizing gallium oxide single crystal composite |
| 05/30/2007 | CN1973064A One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| 05/30/2007 | CN1973063A Monocrystals of nitride containing gallium and its application |
| 05/30/2007 | CN1971839A Preparing method of ferroelectric optical superlattice integration single-electrode control polarization |
| 05/30/2007 | CN1970849A Oxygen atmosphere control preparation method for alpha-axis oriented Yt-Ba-Cu-O superconductive thick film |
| 05/30/2007 | CN1970848A Process for homo-epitaxial growth of superconductive block materials with rare earth Ba-Cu-O film as seed crystal |
| 05/30/2007 | CN1318663C Drop tube type granular crystal producing device |
| 05/30/2007 | CN1318662C CdTe single crystal and CdTe polycrystal, and method for preparation thereof |
| 05/30/2007 | CN1318661C III-v compound crystal and method for production thereof |
| 05/30/2007 | CN1318660C Neodymium-doped lanthanum vanadate (LaVO4) laser crystal and its preparation method |
| 05/30/2007 | CN1318659C Neodymium-doped strontium-lanthanum borate ( Sr3La(BO3)3 ) laser crystal and its preparation method |
| 05/30/2007 | CN1318658C Neodymium-doped strontium-yttrium borate ( Sr3Y(BO3)3 ) laser crystal and its preparation method |
| 05/30/2007 | CN1318657C Neodymium-doped gadolinium-strontium-scandium borate laser crystal and its preparation method |
| 05/30/2007 | CN1318656C Neodymium-doped barium-lanthanum borate ( Ba3La2(BO3)4 ) laser crystal and its preparation method and use |
| 05/30/2007 | CN1318655C MgB2 single crystal and its production method, and superconductive material containing MgB2 single crystal |
| 05/30/2007 | CN1318654C Silicon monocrystal and its producing method |
| 05/30/2007 | CN1318653C Method for making single crystals by growth in solution |
| 05/29/2007 | US7223305 Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electric circuit, and electronic apparatus |
| 05/24/2007 | WO2007059251A2 New diamond uses/applications based on single-crystal cvd diamond produced at rapid growth rate |
| 05/24/2007 | WO2007057892A2 Gan crystal sheet |
| 05/24/2007 | WO2007018555B1 Ultratough cvd single crystal diamond and three dimensional growth thereof |
| 05/24/2007 | US20070117356 Method of manufacturing single crystalline gallium nitride thick film |
| 05/24/2007 | US20070117336 Minimizing Degradation of SiC Bipolar Semiconductor Devices |
| 05/24/2007 | US20070113888 Method for treating powder particles |
| 05/24/2007 | US20070113779 Nanorods, nanoarrays |
| 05/24/2007 | US20070113778 Epitaxial silicon wafer |
| 05/24/2007 | US20070113777 CaF2 single crystals with increased laser resistance, method for their preparation and use thereof |
| 05/24/2007 | DE102006035377A1 Verfahren zur Herstellung eines Halbleiterkristalls A process for producing a semiconductor crystal |
| 05/24/2007 | CA2629726A1 New diamond uses/applications based on single-crystal cvd diamond produced at rapid growth rate |
| 05/23/2007 | EP1788589A1 Antiferromagnetic half metallic semiconductor and method for forming the same |
| 05/23/2007 | EP1788126A1 Method of manufacturing single crystalline gallium nitride thick film |
| 05/23/2007 | EP1787112A1 Coated water soluble nanoparticles |
| 05/23/2007 | EP1786956A1 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| 05/23/2007 | EP1786563A1 Method and apparatus for optimizing crystallization conditions of a substrate |
| 05/23/2007 | EP1268087A4 Nanocylinder arrays |
| 05/23/2007 | EP1257697B1 Process for producing a silicon melt |
| 05/23/2007 | CN1969067A III group nitride single crystal and method for preparation thereof, and semiconductor device |
| 05/23/2007 | CN1966782A Process for preparing lead tungstate crystal |
| 05/23/2007 | CN1966781A Neodymium-doped sodium-yttrium molybdenate laser crystal and its preparation method and use |
| 05/23/2007 | CN1966780A Neodymium-doped sodium-yttrium molybdenate laser crystal and its preparation method and use |
| 05/23/2007 | CN1966401A Semiconductor material |
| 05/23/2007 | CN1317431C Process for producing crystalline nucleus and method of screening crystallization conditions |
| 05/23/2007 | CN1317430C Process for preparing calcium sulfate crystal whisker |
| 05/23/2007 | CN1317429C Process for mfg. silicon single crystal having doped high volatile foreign impurity |
| 05/23/2007 | CN1317427C Process for growing zine oxide monocrystal by hot water method |
| 05/23/2007 | CN1317192C Method for preparing superfine zinc oxide |
| 05/23/2007 | CN1317095C Crystalloid laminae composited from single crystal and directional column crystal and preparing method |