| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 01/09/2008 | CN100360720C Method for growth of zinc oxide monocrystal by falling aerated crucible method |
| 01/09/2008 | CN100360719C Hydrothermal method growth process for self-assembling ZnO array |
| 01/09/2008 | CN100360417C Method for preparing crystal nucleus prefabricated nano calcium carbonate and special equipment |
| 01/08/2008 | US7317202 Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip |
| 01/08/2008 | US7316746 Crystals for a semiconductor radiation detector and method for making the crystals |
| 01/08/2008 | US7316745 High-resistance silicon wafer and process for producing the same |
| 01/03/2008 | WO2008001786A1 METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME |
| 01/03/2008 | WO2008001569A1 Silicon single crystal manufacturing system and silicon single crystal manufacturing method using the system |
| 01/03/2008 | WO2008000802A1 Method for the manufacturing of a nanorod |
| 01/03/2008 | WO2008000801A1 Bath for growing a nanorod |
| 01/03/2008 | US20080003786 Large area, uniformly low dislocation density gan substrate and process for making the same |
| 01/03/2008 | US20080003458 Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride |
| 01/03/2008 | US20080003165 Fullerene Hollow Structure Needle Crystal and C60-C70 Mixed Fine Wire, and Method for Preparation Thereof |
| 01/03/2008 | US20080003162 Control the diameter of SiC nanowhisker by pre-depositing a metal thin film on silicon substrate and controlling the thickness of thin film; reacting silicon substrate with hydrogen and hydrocarbon plasma; light emitters; low cost, emits visible light of various wavelengths |
| 01/03/2008 | US20080001174 directly and securely contact an aluminum alloy film with pixel electrodes and achieve a low electrical resistivity between the pixel electrodes even when a low thermal processing temperature is used; display panels; lower power consumption |
| 01/03/2008 | DE10336110B4 Vorrichtung und Verfahren zum Behandeln eines Proteinkristalls Apparatus and methods for treating a protein crystal |
| 01/03/2008 | DE10204178B4 Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial Method and apparatus for producing a single crystal of semiconductor material |
| 01/03/2008 | DE102006029830A1 Growing of deuterated alanine doped triglycine sulfate monocrystals from a solution for night vision device, comprises arranging a crystal holder in a chamber of a device and pumping the solution in a circulation with the chamber |
| 01/03/2008 | DE10196361B4 Verfahren zur Herstellung eines Gruppe-III-Nitrid-Halbleiterkristalls A method for producing a group III nitride semiconductor crystal |
| 01/02/2008 | EP1873280A1 Oxygen-doped N-type gallium nitride single crystal substrate and method for producing the same |
| 01/02/2008 | EP1873279A1 Nanorod, method for its manufacture, nano contact, nano electric device, and bath for growing a nanorod. |
| 01/02/2008 | EP1873124A2 Method of manufacturing a part from sintered amorphous silica |
| 01/02/2008 | EP1872383A2 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy |
| 01/02/2008 | EP1871928A1 Method for producing iii-n layers, and iii-n layers or iii-n substrates, and devices based thereon |
| 01/02/2008 | EP1871927A2 Seventy five millimeter silicon carbide wafer with low warp, bow, and ttv |
| 01/02/2008 | EP1871926A1 Method for growing thin semiconductor ribbons |
| 01/02/2008 | EP1871162A2 Nanowire dispersion compositions and uses thereof |
| 01/02/2008 | EP1070161B1 A method and a device for epitaxial growth of objects by chemical vapour deposition |
| 01/02/2008 | CN200999271Y Rotating device for silicon carbide epitaxial growth heater |
| 01/02/2008 | CN101099227A Functional device and method for forming oxide material |
| 01/02/2008 | CN101098960A X-ray structure of human fpps and use for selecting fpps binding compounds |
| 01/02/2008 | CN100358802C Method of preparing carbon nano tube by Ni/RE/Cu catalyst chemical gaseous phase sedimentation |
| 01/02/2008 | CN100358621C Improved pressure vessel |
| 01/01/2008 | US7315045 Sapphire/gallium nitride laminate having reduced bending deformation |
| 01/01/2008 | US7314604 Adding air to an acidic solution containing arsenic(V), copper, ferric iron and ferrous iron in a continuously stirred tankto oxidize the ferrous to ferric ion and heating to precipitate FeAsO4; recycling a portion of FeAsO4; seeding with FeAsO4 to enhance crystalline formation |
| 01/01/2008 | US7314516 Hydrodynamic cavitation crystallization device and process |
| 12/27/2007 | WO2007148987A1 Method and crucible for direct solidification of semiconductor grade multi-crystalline silicon ingots |
| 12/27/2007 | WO2007148985A1 Device and method for production of semiconductor grade silicon |
| 12/27/2007 | WO2007148802A1 Method for producing zinc oxide semiconductor crystal |
| 12/27/2007 | WO2007148615A1 METHOD FOR GROWING AlxGa1-xN CRYSTAL, AND AlxGa1-xN CRYSTAL SUBSTRATE |
| 12/27/2007 | WO2007148486A1 SINGLE-CRYSTAL SiC, PROCESS FOR PRODUCING THE SAME, AND APPARATUS FOR PRODUCING SINGLE-CRYSTAL SiC |
| 12/27/2007 | US20070298523 Silicon wafers and method of fabricating the same |
| 12/27/2007 | US20070296335 Process for Producing Layered Member and Layered Member |
| 12/27/2007 | US20070296061 Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device |
| 12/27/2007 | US20070295716 Composite materials and devices comprising single crystal silicon carbide heated by electromagnetic radiation |
| 12/27/2007 | US20070295267 High pressure superabrasive particle synthesis |
| 12/27/2007 | US20070295265 Method for Producing Silicon Wafer and Silicon Wafer |
| 12/27/2007 | DE102006028243A1 Device for crystallizing an amorphous silicon layer on a substrate, for the production of liquid crystal display, comprises an excimer laser, a mask, an imaging objective for imaging the mask on the substrate and a deflector for laser ray |
| 12/26/2007 | CN200996060Y Sapphire crystal growth sintering furnace |
| 12/26/2007 | CN101094940A Magnesium oxide single crystal having controlled crystallinity and method for preparation thereof, and substrate using said single crystal |
| 12/26/2007 | CN101094732A Deposition of silicon-containing films from hexachlorodisilane |
| 12/26/2007 | CN101092750A Method for raising purity of gold Nano bar |
| 12/26/2007 | CN101092749A Method for synthesizing controlable template of Nano polyaniline tube |
| 12/26/2007 | CN101092748A Method for preparing Te-Zn-Cd monocrystal in large volume |
| 12/26/2007 | CN101092747A Laser crystal of yttrium lutecium silicic acid with thulium holmium being doped |
| 12/26/2007 | CN101092746A Combined different valence ions doped crystal of lead tungstate with high light yield, and prepartion method |
| 12/26/2007 | CN101092745A Laser crystal ErBa3B9O18 of borate, preparation method, and usage |
| 12/26/2007 | CN101092744A Macroscopic ZnO monocrystal material in ramiform fractal structure, and preparation method |
| 12/26/2007 | CN101092743A Hydrothermal method for preparing zinc ¿C oxalate of monocrstalline ZnO Nano line |
| 12/26/2007 | CN101092742A Method for preparing no cut crystallitic polysilicon chip in use for high performance solar batteries |
| 12/26/2007 | CN101092741A Method for preparing big ingot of polysilicon in level of solar energy |
| 12/26/2007 | CN101092740A Method for purifying polysilicon, and solidification device |
| 12/26/2007 | CN101092739A Method for preparing high water soluble Nano carbon tube grafted by super branched polymer |
| 12/26/2007 | CN101092737A Method for preparing Nano ultrathin wafer possessing closed packing structure |
| 12/26/2007 | CN101092734A Method for preparing crystal whisker of calcium sulphate, and phosphonic acid |
| 12/26/2007 | CN101091893A Vacuum tube furnace for preparing Nano material |
| 12/26/2007 | CN100358194C Method for preparing composite Ti:Al2O3 laser rod |
| 12/26/2007 | CN100357501C Poly-diallyldimethyl ammonium chloride single-chain single crystal and method for preparing same |
| 12/26/2007 | CN100357500C Method for preparing microlite silicon |
| 12/26/2007 | CN100357499C Method of preparing room temperature ferromagnetism Zn(1-X)Mn(X)O diluted magnetic semiconductor nano-line |
| 12/26/2007 | CN100357498C Method for growth of gallium arsenide monocrystal by gradient freeze method in horizontal three-temperature-zone furnace |
| 12/26/2007 | CN100357023C Method for preparing metal ruthenium nano-wire |
| 12/25/2007 | US7311888 Annealed wafer and method for manufacturing the same |
| 12/25/2007 | US7311775 Method for heat-treating silicon wafer and silicon wafer |
| 12/25/2007 | US7311774 Shaped nanocrystal particles and methods for working the same |
| 12/25/2007 | US7311773 Biopolymer crystal mounting device and manufacturing method thereof |
| 12/25/2007 | US7310874 Method for manufacturing a potassium niobate deposited body |
| 12/21/2007 | WO2007145474A1 Method for continual preparation of polycrystalline silicon using a fluidized bed reactor |
| 12/21/2007 | WO2007145110A1 Method for producing lithium tantalate single crystal |
| 12/21/2007 | WO2007145063A1 Solid-phase sheet growing substrate and solid-phase sheet manufacturing method |
| 12/21/2007 | WO2007144955A1 Single crystal of nitride of group iii element and method of growing the same |
| 12/20/2007 | US20070292339 Iron Oxide Whisker of High Aspect Ratio, Titanium Oxide Whisker of High Aspect Ratio, Structure Containing These and Process for Producing Them |
| 12/20/2007 | US20070290408 Annealing single crystal chemical vapor deposition diamonds |
| 12/20/2007 | US20070289524 Lithium tantalate substrate and method of manufacturing same |
| 12/20/2007 | DE60127252T2 Epitaktischer siliziumwafer frei von selbstdotierung und rückseitenhalo Epitaxial silicon wafer itself free from doping and, back halo |
| 12/20/2007 | DE102007021944A1 Free-standing gallium nitride semiconductor substrate useful in light emitting device, comprises free standing compound semiconductor crystal based on nitride |
| 12/19/2007 | EP1867761A1 Gallate single crystal, process for producing the same, piezoelectric device for high-temperature use and piezoelectric sensor for high-temperature use |
| 12/19/2007 | EP1867760A2 Method for manufacturing diamond single crystal substrate, and diamond single crystal substrate |
| 12/19/2007 | EP1867759A1 Manufacturing equipment for polysilicon ingot |
| 12/19/2007 | EP1867758A1 Method of manufacturing hexagonal nanoplate diamond |
| 12/19/2007 | EP1866466A1 Method for producing a monocrystalline si wafer having an approximately polygonal cross-section and corresponding monocrystalline si wafer |
| 12/19/2007 | EP1866464A1 Seeded growth process for preparing aluminum nitride single crystals |
| 12/19/2007 | EP1866463A2 Line scan sequential lateral solidification of thin films |
| 12/19/2007 | EP1866248A1 Process for the production of si by reduction of siclj with liquid zn |
| 12/19/2007 | EP1866247A1 Device and method for the crystallisation of nonferrous metals |
| 12/19/2007 | EP1215310B1 p-TYPE SINGLE CRYSTAL ZINC OXIDE HAVING LOW RESISTIVITY AND METHOD FOR PREPARATION THEREOF |
| 12/19/2007 | CN200992590Y Vacuum pumping device for growing gallium arsenide single crystal |
| 12/19/2007 | CN101091009A Method for producing directionally solidified silicon ingots |
| 12/19/2007 | CN101090999A Diamond covered substrate, filtration filter, and electrode |
| 12/19/2007 | CN101090096A Nitride semiconductor free-standing substrate and nitride semiconductor light emitting device |