| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 02/06/2008 | CN101118940A Built crystal substrate and liquid built crystal growing method |
| 02/06/2008 | CN101118851A Method of manufacturing semiconductor device |
| 02/06/2008 | CN101117730A Multi-stage ordered arranged ZSM-5 nano rod bundle and preparation method thereof |
| 02/06/2008 | CN101117729A Method for treating water solution heavy metallic ion by using trititanic acid sodium whisker |
| 02/06/2008 | CN101117728A Method for synthesizing sodium titanate whisker |
| 02/06/2008 | CN101117290A Method for preparing nano strontium titanate by lactic acid adjuvant process |
| 02/06/2008 | CN100367525C Superconductor method and reactor |
| 02/06/2008 | CN100367509C High-resisting silicon carbide substrate for semiconductor devices with high breakdown voltage |
| 02/06/2008 | CN100366802C Coloured diamond |
| 02/05/2008 | US7326908 Optically-regulated optical emission using colloidal quantum dot nanocrystals |
| 02/05/2008 | US7326652 Atomic layer deposition using photo-enhanced bond reconfiguration |
| 02/05/2008 | US7326598 Method of fabricating polycrystalline silicon |
| 02/05/2008 | US7326477 Optoelectronic devices, light emitting diodes (LEDs) and lasers; specific crystallographic orientation, and the flats are provided to extend along desired plane sets. The flats may advantageously identify orientation of cleavage planes, and direction of cleavage of cleavage planes |
| 02/05/2008 | US7326434 Precursor solutions and methods of using same |
| 02/05/2008 | US7326395 Wafer is occupied by N region outside OSF region generated in a ring shape in the radial direction of a single crystal, and Fe concentration of the entire plane in the radial direction including a peripheral part of the wafer is 1x1010 atoms/cm3 or less; produced by the Czochralski method |
| 02/05/2008 | US7326296 High throughput screening of crystallization of materials |
| 02/05/2008 | US7326295 Fabrication method for polycrystalline silicon thin film and apparatus using the same |
| 02/05/2008 | US7326293 Patterned atomic layer epitaxy |
| 02/05/2008 | US7326292 Quality evaluation method for single crystal ingot |
| 01/31/2008 | WO2008013108A1 Process for producing single-crystal substrate with off angle |
| 01/31/2008 | WO2008012215A1 Method and device for producing classified high-purity polycrystalline silicon fragments |
| 01/31/2008 | WO2007059251A9 New diamond uses/applications based on single-crystal cvd diamond produced at rapid growth rate |
| 01/31/2008 | US20080026234 Epitaxial oxide films via nitride conversion |
| 01/31/2008 | US20080023710 Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method |
| 01/31/2008 | US20080022921 Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device |
| 01/31/2008 | DE10304533B4 Bead-Kristall sowie Verfahren zur Herstellung eines Bead-Kristalls und Verwendung Bead-crystal and methods of making and using a bead crystal |
| 01/31/2008 | DE102005013787B4 Verfahren zur Erzeugung eines Arsen-Dotiermittel für das Ziehen von Siliziumeinzelkristallen Method for generating a arsenic dopant for pulling of silicon single crystals |
| 01/31/2008 | DE102005013410B4 Vorrichtung und Verfahren zum Kristallisieren von Nichteisenmetallen Apparatus and method for crystallizing non-ferrous metals |
| 01/30/2008 | EP1882057A2 A high resistivity silicon structure and a process for the preparation thereof |
| 01/30/2008 | EP1254861B1 Silicon continuous casting method |
| 01/30/2008 | CN101113532A Laser and non-linear optical bismuth phosphate crystal and preparation and usage thereof |
| 01/30/2008 | CN101113531A Fluxing medium growing method for fluoroboric acid calcium non-linear optical crystal |
| 01/30/2008 | CN100365778C Method of fabricating polysilicon thin film and thin film transistor using polysilicon fabricated by the same method |
| 01/30/2008 | CN100365760C Method for manufacturing semiconductor device, semeconductor device and electronic product |
| 01/30/2008 | CN100365173C Method of production of silicon carbide single crystal |
| 01/30/2008 | CN100365172C Yb and Er -codoped gadolinium silicate laser crystal and preparation method therefor |
| 01/30/2008 | CN100365171C Method for preparing flaky monocrystal lanthanum bismuth titanate powder by molten salt method |
| 01/30/2008 | CN100365170C SnO2 monodisperse nano monocrystal with square structure and synthesis method thereof |
| 01/29/2008 | US7323356 Growing a base thin film on a single-crystal substrate; depositing amorphous or polycrystalline LnCuOX thin film to form laminate; and annealing film at 500 degrees C. or more in a vacuum environment; light-emitting diodes, semiconductor leasers, filed-effect transistors, hetero-bipolar transistors |
| 01/29/2008 | US7323256 Uncut single crystal III-V nitride (optionally doped) having a large area of at least 15 cm2 on a face and a uniformly low dislocation density not exceeding 3x106 dislocations per cm2 of growth surface area on the face; wafers for microelectronic and opto-electronic devices |
| 01/29/2008 | US7323249 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
| 01/29/2008 | US7323051 One hundred millimeter single crystal silicon carbide wafer |
| 01/29/2008 | US7323049 synthesizing superabrasive particles, wherein crystalline seeds can be arranged in a predetermined pattern; high yield of high quality industrial particles and a narrow distribution of particle sizes |
| 01/29/2008 | US7323048 Method for producing a single crystal and a single crystal |
| 01/24/2008 | WO2008011022A1 Method of manufacturing substrates having improved carrier lifetimes |
| 01/24/2008 | WO2008010583A1 Piezoelectric substance, piezoelectric element, and liquid discharge head and liquid discharge apparatus using piezoelectric element |
| 01/24/2008 | WO2008010541A1 Method for reducing dislocation in group iii nitride crystal and substrate for epitaxial growth |
| 01/24/2008 | WO2008009805A1 Method for the growth of indium nitride |
| 01/24/2008 | US20080019896 Inp Single Crystal Wafer and Method for Producing Inp Single Crystal |
| 01/24/2008 | US20080017802 Fluorescent Material, a Method of Manufacturing the Fluorescent Material, a Radiation Detector Using the Fluorescent Material, and an X-Ray Ct Scanner |
| 01/24/2008 | CA2657929A1 Method of manufacturing substrates having improved carrier lifetimes |
| 01/23/2008 | EP1881094A1 Process for producing group iii element nitride crystal, apparatus for producing group iii element nitride crystal, and group iii element nitride crystal |
| 01/23/2008 | EP1881093A2 Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT |
| 01/23/2008 | EP1504368A4 Method for crystallizing human gsk3 and novel crystal structure thereof |
| 01/23/2008 | EP1404902A4 High surface quality gan wafer and method of fabricating same |
| 01/23/2008 | EP1268882A4 Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide |
| 01/23/2008 | CN101109108A Process for producing cadmium sulfide quantum wire |
| 01/23/2008 | CN101109107A Production method for controlling yttrium-barium-copper-oxygen superconducting thick film surface internal orientation growth in oxygen ambient |
| 01/23/2008 | CN101109106A Process for producing aluminum oxide crystal whisker |
| 01/23/2008 | CN101109105A Graphite boat for improving mercury cadmium telluride rheotaxy membrane surface shape |
| 01/23/2008 | CN101109102A Method of synthesizing organic-inorganic compound germanium oxide monocrystal nano thread |
| 01/23/2008 | CN101109100A Process for producing indium oxide nanocrystalline with controlled shape |
| 01/23/2008 | CN101108783A Organic semicondutor element |
| 01/23/2008 | CN100363369C Laminated organic-inorganic perofskite with metal defect inorganic frame |
| 01/23/2008 | CN100363253C Method for developing crystal of aluminium phosphate through cosolvent |
| 01/17/2008 | WO2008007559A1 Oxide phosphor epitaxial thin film |
| 01/17/2008 | WO2008007336A2 A method for producing diamond material |
| 01/17/2008 | US20080014723 Iii-v nitride semiconductor substrate and its production method |
| 01/17/2008 | US20080011224 Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal |
| 01/16/2008 | EP1738199B1 Scintillator material based on rare earth with a reduced nuclear background |
| 01/16/2008 | CN101106082A Method for the simultaneous double-side grinding of a plurality of semiconductor wafers, and semiconductor wafer having outstanding flatness |
| 01/16/2008 | CN101104953A Method for preparing TiO2 nano material by direct current deposition method using anode aluminum oxide as template |
| 01/16/2008 | CN101104952A High doping concentration silicon carbide epitaxial growth method |
| 01/16/2008 | CN101104951A Method for preparing samarium-barium-copper-oxygen single-orientation superconductive block |
| 01/16/2008 | CN101104950A Fluxing agent growth method for trigallium phosphate crystal |
| 01/16/2008 | CN101104949A Zn(1-x)Mn(x)O crystal thin film with cube phase and rock salt ore structure |
| 01/16/2008 | CN100362147C Process for preparing nano barium titanate and doped solid solution by low temperature solid state reaction |
| 01/16/2008 | CN100362146C Terbium paramagnetic garnet single crystal and magneto-optical device |
| 01/16/2008 | CN100362145C Non-linear optics crystal material, process for preparing the same and purposes thereof |
| 01/16/2008 | CN100362144C Method for preparing borate-based crystal and laser oscillation apparatus |
| 01/16/2008 | CN100362143C Method of preparing nanocrystalline silicon thin film in high pressure heat filling hydrogen and special apparatus for the same |
| 01/10/2008 | WO2008005636A1 One hundred millimeter sic crystal grown on off-axis seed |
| 01/10/2008 | WO2008004657A1 p-TYPE ZINC OXIDE THIN FILM AND METHOD FOR FORMING THE SAME |
| 01/10/2008 | WO2008004424A1 PROCESS FOR PRODUCING SUBSTRATE OF AlN CRYSTAL, METHOD OF GROWING AlN CRYSTAL, AND SUBSTRATE OF AlN CRYSTAL |
| 01/10/2008 | WO2007137182A3 Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth |
| 01/10/2008 | WO2007133358A3 Semiconductor buffer structures |
| 01/10/2008 | WO2007128522A3 Process for producing a iii-n bulk crystal and a free-standing iii -n substrate, and iii -n bulk crystal and free-standing ih-n substrate |
| 01/10/2008 | WO2007102799A3 Synthesis of alloyed nanocrystals in aqueous or water-soluble solvents |
| 01/10/2008 | US20080008642 Process For Producing Aluminum Nitride Crystal And Aluminum Nitride Crystal Obtained Thereby |
| 01/10/2008 | US20080008438 Self-Coated Single Crystal, And Production Apparatus And Process Therefor |
| 01/10/2008 | DE10111778B4 Supraleiter-Zwischenprodukt und seine Verwendung Superconductor intermediate and its use |
| 01/09/2008 | EP1876270A1 METHOD FOR GROWTH OF GaN SINGLE CRYSTAL, METHOD FOR PREPARATION OF GaN SUBSTRATE, PROCESS FOR PRODUCING GaN-BASED ELEMENT, AND GaN-BASED ELEMENT |
| 01/09/2008 | EP1876269A1 Oxide single crystal and method for production thereof, and single crystal wafer |
| 01/09/2008 | EP1875512A1 Diamond transistor and method of manufacture thereof |
| 01/09/2008 | EP1874985A1 Method of and system for forming sic crystals having spatially uniform doping impurities |
| 01/09/2008 | EP1874983A1 Support for manufacturing a strip based on polycrystalline sillicon |
| 01/09/2008 | EP1874685A1 Method and apparatus for the continuous production and functionalization of single-waled carbon nanotubes using a high frequency plasma torch |
| 01/09/2008 | EP1751329B1 Method of sic single crystal growth and sic single crystal |
| 01/09/2008 | CN100361323C Nitride semiconductor substrate and method of producing same |
| 01/09/2008 | CN100360721C Method for mfg. ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device |