| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 03/05/2008 | CN101135059A Method for preparing nano zinc oxide whisker |
| 03/05/2008 | CN100373544C Silicon wafers and method of fabricating the same |
| 03/04/2008 | US7340147 Optical waveguide material and optical waveguide |
| 03/04/2008 | US7338555 Highly crystalline aluminum nitride multi-layered substrate and production process thereof |
| 03/04/2008 | US7338554 Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof |
| 02/28/2008 | WO2008023774A1 Method for producing nitride semiconductor and nitride semiconductor device |
| 02/28/2008 | WO2008023639A1 Semiconductor substrate for epitaxial growth and process for producing the same |
| 02/28/2008 | WO2008023635A1 SINGLE-CRYSTAL SiC AND PROCESS FOR PRODUCING THE SAME |
| 02/28/2008 | US20080047483 Singel crystal scintillator materials and methods for making the same |
| 02/27/2008 | EP1892546A2 A method of producing a slab type two-dimensional photonic crystal structure |
| 02/27/2008 | EP1892323A1 Silicon single crystal growing method, silicon wafer and soi substrate using such silicon wafer |
| 02/27/2008 | EP1891686A1 Iii-v semiconductor core-heteroshell nanocrystals |
| 02/27/2008 | EP1891663A1 Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate |
| 02/27/2008 | EP1689916A4 Scintillation substances (variants) |
| 02/27/2008 | EP1502303A4 High voltage switching devices and process for forming same |
| 02/27/2008 | EP1315682B1 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
| 02/27/2008 | CN101133194A Production technique and device for float silicon wafer |
| 02/27/2008 | CN101133192A Electromagnetic pumping of liquid silicon in a crystal growing process |
| 02/27/2008 | CN101133191A Method and device for producing oriented solidified blocks made of semi-conductor material |
| 02/27/2008 | CN101130883A Rectangular bimetallic nano rod with gold nucleus and palladium shell and method for making the same |
| 02/27/2008 | CN101130882A Guiding mold structure used for growth shaping single crystal alumina porcelain |
| 02/27/2008 | CN101130431A Method for purifying nano carbon fiber of multi-wall carbon nano-tube |
| 02/27/2008 | CN100372063C Group III nitride semiconductor substrate and its manufacturing method |
| 02/27/2008 | CN100371510C Piezoelectric single crystal, piezoelectric single crystal element and method for producing the same |
| 02/27/2008 | CN100371509C ZnO nano crystal column/nano crystal filament composite structure product and its preparing process |
| 02/26/2008 | US7335283 Production method for composite oxide thin film and device therefor and composite oxide film produced thereby |
| 02/26/2008 | US7335259 Growth of single crystal nanowires |
| 02/26/2008 | US7335258 bonding adenine, guanine, cytosine, thymine, pyrene and anthracene to chondroitin sulfate, then attaching the chondroitin sulfate molecule to carbon nanotube, wherein the carbon nanotube is made soluble in solution; microelectronic structures |
| 02/26/2008 | US7335256 Silicon single crystal, and process for producing it |
| 02/21/2008 | WO2008020092A1 Improvements introduced into patent p200500389 for 'personalized synthetic diamond of different colours, obtained from (living or dead) human or animal keratin and production method thereof' |
| 02/21/2008 | US20080044570 Method for Producing a Thin-Film Chalcopyrite Compound |
| 02/21/2008 | US20080044339 Thick single crystal diamond layer method for making it and gemstones produced from the layer |
| 02/21/2008 | US20080044075 Doped Lithium Fluoride Monochromator For X-Ray Analysis |
| 02/21/2008 | DE112006000771T5 Si-dotierter GaAs-Einkristallingot und Verfahren zur Herstellung desselbigen, und Si-dotierter GaAs-Einkristallwafer, der aus Si-dotiertem GaAs-Einkristallingot hergestellt wird Si-doped GaAs single crystal ingot and process for producing desselbigen, and Si-doped GaAs single crystal wafer, which is made of Si-doped GaAs single crystal ingot |
| 02/21/2008 | DE102007027446A1 Halbleitersubstrat auf Gruppe-III-V-Nitrid-Basis und lichtemittierende Vorrichtung auf Gruppe-III-V-Nitrid-Basis Semiconductor substrate to the Group III-V nitride-based light emitting device and the group III-V nitride-based |
| 02/20/2008 | EP1890344A1 Method of fabricating light emitting device |
| 02/20/2008 | EP1889953A1 Process for producing silicon carbide single crystal |
| 02/20/2008 | EP1888821A1 Low basal plane dislocation bulk grown sic wafers |
| 02/20/2008 | EP1888457A1 Synthesis of a starting material with improved outgassing for the growth of fluoride crystals |
| 02/20/2008 | CN101128911A System and process for high-density, low-energy plasma enhanced vapor phase epitaxy |
| 02/20/2008 | CN101128626A Preparation of suspensions |
| 02/20/2008 | CN101128625A Method for growing thin semiconductor ribbons |
| 02/20/2008 | CN101127380A ZnO nano structure vertical on silicon/insulation layer structure underlay and its making method |
| 02/20/2008 | CN101126173A Fluid level position monitoring apparatus of melt in growth process of silicon single crystal |
| 02/20/2008 | CN101126165A Method for preparing one-dimensional nano material |
| 02/20/2008 | CN100370065C B-ga2o3 single crystal growing method, thin-film single crystal growing method, ga2o3 light-emitting device, and its manufacturing method |
| 02/20/2008 | CN100369703C Fe nanowire and preparation method thereof |
| 02/19/2008 | US7332417 Semiconductor structures with structural homogeneity |
| 02/19/2008 | US7332028 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon |
| 02/14/2008 | WO2008018760A1 Method and apparatus for preparation of granular polysilicon |
| 02/14/2008 | WO2008018613A1 Semiconductor manufacturing apparatus |
| 02/14/2008 | WO2008018322A1 Single-crystal silicon carbide and process for producing the same |
| 02/14/2008 | WO2008018321A1 SINGLE-CRYSTAL SiC, PROCESS FOR PRODUCING THE SAME AND SINGLE-CRYSTAL SiC PRODUCTION APPARATUS |
| 02/14/2008 | WO2008018320A1 MATERIAL FOR FABRICATING SINGLE CRYSTAL SiC, METHOD FOR FABRICATING THE MATERIAL, METHOD FOR FABRICATING SINGLE CRYSTAL SiC USING THE MATERIAL, AND SINGLE CRYSTAL SiC OBTAINED BY THE METHOD FOR FABRICATING SINGLE CRYSTAL SiC |
| 02/14/2008 | WO2008018319A1 SINGLE CRYSTAL SiC, ITS FABRICATION METHOD, AND FABRICATION EQUIPMENT FOR SINGLE CRYSTAL SiC |
| 02/14/2008 | WO2008018314A1 Process for producing superconducting oxide material |
| 02/14/2008 | WO2008018237A1 GaxIn1-xN SUBSTRATE AND GaxIn1-xN SUBSTRATE CLEANING METHOD |
| 02/14/2008 | WO2008017320A1 Method for producing a doped iii-n solid crystal and a free-standing doped iii-n substrate, and doped iii-n solid crystal and free-standing doped iii-n substrate |
| 02/14/2008 | WO2007143072A3 Wet etch suitable for creating square cuts in si and resulting structures |
| 02/14/2008 | WO2007081492A3 High growth rate methods of producing high-quality diamonds |
| 02/14/2008 | WO2005053003A3 Method of production of silicon carbide single crystal |
| 02/14/2008 | US20080038580 Group III-V Crystal |
| 02/14/2008 | US20080038531 Silicon Carbide Single Crystal And Single Crystal Wafer |
| 02/14/2008 | US20080038492 Method for Producing Nanotube Material and Nanotube Material |
| 02/14/2008 | US20080038179 Apparatus and method for producing single crystal, and silicon single crystal |
| 02/14/2008 | US20080038177 Cooled Lump From Molten Silicon And Process For Producing The Same |
| 02/14/2008 | DE102006037652A1 Expanded silicon substrate for the production of sensors/solar cell or for the production of further substrates, consists of monocrystalline regions having a uniform crystal orientation to its respective surface-normal |
| 02/13/2008 | EP1887110A1 Silicon single crystal manufacturing method and silicon wafer |
| 02/13/2008 | EP1887109A2 Aluminum nitride single crystal |
| 02/13/2008 | EP1885918A1 Controlled polarity group iii-nitride films and methods of preparing such films |
| 02/13/2008 | CN101124158A Personalised synthetic diamond of different colours, obtained from (living or dead) human or animal keratin and production method thereof |
| 02/13/2008 | CN101124152A Nanostructures formed of branched nanowhiskers and methods of producing the same |
| 02/13/2008 | CN101123188A Semiconductor wafers with highly precise edge profile and method for producing them |
| 02/13/2008 | CN101122049A Method for preparing mullite crystal whisker from coal refuse and aluminum oxide |
| 02/13/2008 | CN101122048A Epitaxy strontium lead titanate film with LiNiO2 cushioning layer |
| 02/13/2008 | CN101122047A Method for manufacturing polycrystalline silicon used for solar battery |
| 02/13/2008 | CN101122046A Low energy consumption purifying and preparing method for polycrystalline silicon raw material |
| 02/13/2008 | CN100368604C Method for producing group iii nitride single crystal and apparatus used therefor |
| 02/13/2008 | CN100368603C Neodymium doped lithium lanthanum tungstate lacer crystla and its prepn |
| 02/13/2008 | CN100368602C Neodymium-doped strontium-yttrium borate laser crystal |
| 02/13/2008 | CN100368601C Autoclave synthesis method of sulfur group compound |
| 02/13/2008 | CN100368080C Process for preparing carbon nano tube and carbon onion by Ni/Al catalyst chemical gas phase deposition |
| 02/12/2008 | US7330243 Method for monitoring the production of biomolecule crystals |
| 02/12/2008 | US7329590 Method for depositing nanolaminate thin films on sensitive surfaces |
| 02/12/2008 | US7329364 Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film |
| 02/12/2008 | US7329317 Method for producing silicon wafer |
| 02/12/2008 | CA2467174C Differential stress reduction in thin films |
| 02/07/2008 | WO2007139859A3 M003 nanowires obtained by electrospinning for bio-chem sensors |
| 02/07/2008 | WO2007107757B1 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials |
| 02/07/2008 | US20080032880 Process For Manufacturing Wafer Of Silicon Carbide Single Crystal |
| 02/07/2008 | US20080032490 Nanocylinder arrays |
| 02/07/2008 | US20080032040 Wafer Support and Semiconductor Substrate Processing Method |
| 02/07/2008 | US20080029019 Method For Producing Directionally Solidified Silicon Ingots |
| 02/07/2008 | DE112006000816T5 Produktionsverfahren für Siliziumeinkristall, getemperter Wafer und Produktionsverfahren für getemperten Wafer Production process for silicon single crystal wafer annealed and annealed wafer production for |
| 02/07/2008 | DE102006034786A1 Monokristalline Halbleiterscheibe mit defektreduzierten Bereichen und Verfahren zu ihrer Herstellung Monocrystalline semiconductor wafer with reduced defect areas, and methods for their preparation |
| 02/07/2008 | DE102004048454B4 Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen A process for the production of group III-nitride bulk crystals or crystal layers of molten metal |
| 02/06/2008 | EP1884580A2 Method of growing gallium nitride crystal |
| 02/06/2008 | EP1883719A1 A bulk, free-standing cubic iii-n substrate and a method for forming same |
| 02/06/2008 | CN101120124A Process for producing silicon carbide single crystal |
| 02/06/2008 | CN101120123A Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same |