| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 03/26/2008 | CN101148779A Preparation method for potassium titanate crystal whisker |
| 03/26/2008 | CN101148778A Hydroxyapatite crystal whisker with high length-diameter ratio and preparation method thereof |
| 03/26/2008 | CN101148777A Method and device for growing gallium-mixing silicon monocrystal by czochralski method |
| 03/26/2008 | CN101148776A Epitaxy growth method for gallium antimonide on gallium arsenide substrate |
| 03/26/2008 | CN100377306C Non-polar single crystalline A-plane nitride semiconductor wafer and preparation method thereof |
| 03/26/2008 | CN100376727C Method of manufacturing group-III nitride crystal |
| 03/26/2008 | CN100376726C Silicon carbide crystal whisker generation furnace and method for producing silicon carbide crystal whisker |
| 03/26/2008 | CN100376725C CaB4 compound crystal and preparation method thereof |
| 03/26/2008 | CN100376724C Method for flux growth of Na3La9B8027 |
| 03/26/2008 | CN100376317C High temperature high pressure capsule for processing material in supercritical fluid |
| 03/25/2008 | US7348718 Discharge electrode implemented by a wide bandgap semiconductor and a discharge lamp using the same |
| 03/25/2008 | US7348670 Nanostructure, electronic device and method of manufacturing the same |
| 03/25/2008 | US7348200 Method of growing non-polar a-plane gallium nitride |
| 03/25/2008 | US7348076 sapphire single crystal is in the form of a sheet having a length>width>>thickness, the width not being less than 15 centimeters and the thickness being not less than about 0.5 centimeters |
| 03/25/2008 | US7347956 Ytterbium (Yb) mixed oxide having a base crystal consisting of garnet single crystal or a borate single crystal; forms an optically active charge transfer state (CTS) together with a neighboring negative ion; achieve a high-accuracy scintillation detector for enhanced resolution tomography scan |
| 03/25/2008 | CA2406347C Gan substrate, method of growing gan and method of producing gan substrate |
| 03/20/2008 | WO2008032752A1 Substrate production equipment |
| 03/20/2008 | WO2008031229A1 Process and apparatus for purifying low-grade silicon material |
| 03/20/2008 | WO2007143743A3 High volume delivery system for gallium trichloride |
| 03/20/2008 | US20080069953 three gas inlet zones disposed vertically one above the other, located between the ceiling and the heated floor; vapor deposition of semiconductor crystalline layers; reduce the horizontal extent of the inlet zone |
| 03/20/2008 | US20080067493 Diamond Electron Emission Cathode,Electron Emission Source,Electron Microscope,And Electron Beam Exposure Device |
| 03/19/2008 | EP1900859A1 Composite comprising array of acicular crystal, process for producing the same, photoelectric conversion element, luminescent element, and capacitor |
| 03/19/2008 | EP1900858A1 Epitaxial wafer and method of producing same |
| 03/19/2008 | EP1900857A1 Method of manufacturing single crystalline gallium nitride thick film |
| 03/19/2008 | EP1900856A2 Silicon carbide manufacturing device and method of maufacturing silicon carbide |
| 03/19/2008 | EP1899261A2 Semiconducting nanoparticles with surface modification |
| 03/19/2008 | EP1565484B1 Mesoporous glass as nucleant for macromolecule crystallisation |
| 03/19/2008 | EP1337698A4 Single crystals of lead magnesium niobate-lead titanate |
| 03/19/2008 | EP1328014B1 Semiconductor base material and method of manufacturing the material |
| 03/19/2008 | CN101146936A Magnesium oxide single crystal and method for producing same |
| 03/19/2008 | CN101146743A Process for the production of si by reduction of siclj with liquid zn |
| 03/19/2008 | CN101145516A Silicon base nitride single crystal thin film epitaxial structure and growth method |
| 03/19/2008 | CN101144188A Orthogonal structure BC3N crystal and preparation method thereof |
| 03/19/2008 | CN101144187A Y and Zn double doping lead tungstate crystal and preparation method thereof |
| 03/19/2008 | CN101144186A Method for synthesizing potassium hexatitanate crystal whisker |
| 03/19/2008 | CN101144185A Method for growing near-stoichiometric ratio lithium niobate crystal |
| 03/19/2008 | CN101144184A Crystalline metal film |
| 03/19/2008 | CN101144183A Method for preparing gold micron crystal with surface enhanced Raman active branched surface |
| 03/19/2008 | CN101144182A Method of growing gallium nitride crystal |
| 03/19/2008 | CN101143357A Nanocrystalline film and its low temperature preparing method |
| 03/19/2008 | CN100375795C Magnesium borate whisker hydrothermal synthesis preparation method |
| 03/18/2008 | US7344753 Noncatalytically forming a nanowire on a substrate from an organometallic vapor without any type of reducing agent; use of Copper (ethylacetoacetate)trialkyl phosphite as copper precursor for example; integrated circuits |
| 03/18/2008 | US7344595 Method and apparatus for purification of crystal material and for making crystals therefrom and use of crystals obtained thereby |
| 03/18/2008 | US7344594 Melter assembly and method for charging a crystal forming apparatus with molten source material |
| 03/13/2008 | WO2008029827A1 PROCESS FOR PRODUCING AlN CRYSTAL |
| 03/13/2008 | WO2008029736A1 Method for separating surface layer or growth layer of diamond |
| 03/13/2008 | WO2008029589A1 Method and equipment for producing group-iii nitride |
| 03/13/2008 | WO2008029579A1 Silicon single-crystal wafer and process for producing the same |
| 03/13/2008 | WO2008028522A1 A method of synthesizing semiconductor nanostructures and nanostructures synthesized by the method |
| 03/13/2008 | WO2007081492A9 High growth rate methods of producing high-quality diamonds |
| 03/13/2008 | US20080060381 Ferroelectric film, method of manufacturing the same, ferroelectric memory and piezoelectric device |
| 03/13/2008 | DE102006041513A1 Hochtemperatur-Schichtsupraleiteraufbau und Verfahren zu seiner Herstellung High-temperature layer superconductor structure and process for its preparation |
| 03/13/2008 | CA2662594A1 Method and apparatus for producing a group iii nitride |
| 03/12/2008 | EP1897978A1 Manufacturing method of group III nitride substrate, group III nitride substrate, group III nitride substrate with epitaxial layer, group III nitride device, manufacturing method of group III nidtride substrate with epitaxial layer, and manufacturing method of group III nitride device |
| 03/12/2008 | EP1897977A1 Method of growing silicon single crystal |
| 03/12/2008 | EP1897976A2 Method for producing silicon single crystal and method for producing silicon wafer |
| 03/12/2008 | EP1897965A1 A process for eliminating precipitates from a semiconductor II-VI material by annealing. |
| 03/12/2008 | EP1897853A1 Process for producing conductive mayenite compound |
| 03/12/2008 | EP1897123A2 A cold-walled vessel process for compounding, homogenizing and consolidating semiconductor compounds |
| 03/12/2008 | EP1896636A2 Nanorod arrays formed by ion beam implantation |
| 03/12/2008 | EP1778890B1 Method for production of reactors for the decomposition of gases |
| 03/12/2008 | EP1684973A4 Vicinal gallium nitride substrate for high quality homoepitaxy |
| 03/12/2008 | EP1614166A4 Fluidic nanotubes and devices |
| 03/12/2008 | EP1583858A4 Sacrificial template method of fabricating a nanotube |
| 03/12/2008 | CN101142235A Estrogen receptor structure |
| 03/12/2008 | CN101139734A Method for preparing calcium carbonate crystal whisker |
| 03/12/2008 | CN101139733A Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it |
| 03/12/2008 | CN100375233C Fabrication method for polycrystalline silicon thin film and display device fabricated using the same |
| 03/12/2008 | CN100374628C Method and device for prodn. of silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions |
| 03/12/2008 | CN100374627C Method for producing high purity silica crucible by electrolytic refining, mfg. method of crucible and pulling method |
| 03/12/2008 | CN100374626C Method and device for growing sapphire crystal by laser |
| 03/12/2008 | CN100374369C Method of treating carbon nano tube using electric arc discharging |
| 03/11/2008 | US7341929 Method to fabricate patterned strain-relaxed SiGe epitaxial with threading dislocation density control |
| 03/11/2008 | US7341787 doping silicon or germanium with group III compounds for p-type doping and to group V compounds for n-type doping, coating with an epitaxial layer and optionally having structures formed by electronic components; substrates having low electrical resistance |
| 03/11/2008 | US7341628 Method to reduce crystal defects particularly in group III-nitride layers and substrates |
| 03/11/2008 | CA2444561C Biofunctional hydroxyapatite coatings and microspheres for in-situ drug encapsulation |
| 03/06/2008 | WO2008028051A1 High-index uv opitcal materials for immersion lithography |
| 03/06/2008 | WO2008026931A1 Method and equipment for manufacturing multi-crystalline solar grade silicon from metallurgical silicon |
| 03/06/2008 | US20080057324 Epitaxial wafer and method of producing same |
| 03/06/2008 | US20080057323 Epitaxial silicon wafer and fabrication method thereof |
| 03/06/2008 | US20080057197 Chemical vapor deposition reactor having multiple inlets |
| 03/06/2008 | US20080056984 Hexagonal Wurtzite Type Single Crystal, Process For Producing The Same, And Hexagonal Wurtzite Type Single Crystal Substrate |
| 03/06/2008 | US20080054412 Reduction of carrot defects in silicon carbide epitaxy |
| 03/06/2008 | DE112006001204T5 Verfahren und Vorrichtung zum Erzeugen von Siliciumkarbidkristallen Method and apparatus for producing silicon carbide crystals |
| 03/05/2008 | EP1895579A1 Diamond semiconductor element and method for manufacturing same |
| 03/05/2008 | EP1895573A1 Silicon carbide single-crystal wafer and process for producing the same |
| 03/05/2008 | EP1895031A1 Process for producing silicon carbide single crystal |
| 03/05/2008 | EP1895030A2 Method and assembly for manufacturing a pipe |
| 03/05/2008 | EP1895029A1 Apparatus for producing semiconductor single crystal |
| 03/05/2008 | EP1895028A1 Apparatus for producing semiconductor single crystal |
| 03/05/2008 | EP1895027A1 Method of growing silicon single crystal and process for producing silicon wafer |
| 03/05/2008 | EP1895026A1 Method of growing silicon single crystal and silicon single crystal grown by the method |
| 03/05/2008 | EP1895025A2 Semiconductor crystal, and method and apparatus of production |
| 03/05/2008 | EP1894647A1 Method of producing monocrystalline seeds simultaneously when casting monocrystalline parts |
| 03/05/2008 | EP1894256A1 Grown photonic crystals in semiconductor light emitting devices |
| 03/05/2008 | EP1485955A4 Semiconductor-nanocrystal/conjugated polymer thin films |
| 03/05/2008 | CN201031265Y Two regions gas-phase transport synthesizing container |
| 03/05/2008 | CN201031264Y Growth device of multiple compound semi-conductor single-crystal |
| 03/05/2008 | CN101137774A Container for easily oxidizable or hygroscopic substance, and method for heating and pressuring treatment of easily oxidizable or hygroscopic substance |
| 03/05/2008 | CN101135060A Re3+,Cr5+:LnVO4 automodulation laser crystal and preparation method and application thereof |