| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 04/23/2008 | CN100383297C Preparation method of nonlinear optical crystal |
| 04/23/2008 | CN100383296C Lauric water nickel-cobalt sulfate crystal for ultraviolet light passband filter |
| 04/22/2008 | US7361222 Device and method for producing single crystals by vapor deposition |
| 04/22/2008 | US7361219 Method for producing silicon wafer and silicon wafer |
| 04/22/2008 | US7361218 Method and apparatus for fabricating a crystal fiber |
| 04/22/2008 | CA2361708C Silicon ribbon growth dendrite thickness control system |
| 04/17/2008 | WO2008045337A1 Method for forming nitride crystals |
| 04/17/2008 | WO2008044744A1 Process for producing single crystal of silicon carbide |
| 04/17/2008 | WO2008044333A1 Production method of diamond particles having colored cut faces, and production method of diamond particles having pattern-drawn cut faces |
| 04/17/2008 | US20080090720 Process and apparatus for hot-forging synthetic ceramic |
| 04/17/2008 | US20080090390 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/17/2008 | US20080090386 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/17/2008 | US20080090328 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/17/2008 | US20080090327 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device |
| 04/17/2008 | US20080089831 high carrier concentration and low resistivity |
| 04/17/2008 | US20080087984 Compound semiconductor modified surface by use of pulsed electron beam and ion implantation through a deposited metal layer |
| 04/17/2008 | US20080087899 Optically-Regulated Optical Emission Using Colloidal Quantum Dot Nanocrystals |
| 04/17/2008 | DE102006048409A1 Production of layers and/or crystals of group 3 metal nitrides using sublimation comprises producing the metal nitride from a source containing the metal nitride and depositing the metal nitride on a substrate and/or seed crystal |
| 04/16/2008 | EP1673306B1 Method for the synthesis of filament structures on a nanometre scale and electronic components comprising such structures |
| 04/16/2008 | EP1581674B1 Method for the production of monocrystalline structures and component |
| 04/16/2008 | CN101163824A Method of and system for forming sic crystals having spatially uniform doping impurities |
| 04/16/2008 | CN100382244C Buffer structure for modifying a silicon substrate |
| 04/16/2008 | CN100381619C Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor |
| 04/16/2008 | CN100381618C Method for preparing aluminate long-persistence luminous plate |
| 04/15/2008 | US7358166 Relaxed, low-defect SGOI for strained Si CMOS applications |
| 04/15/2008 | US7358159 Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device |
| 04/15/2008 | US7358112 Method of growing a semiconductor layer |
| 04/15/2008 | US7357836 Crystalline membranes |
| 04/10/2008 | WO2008042706A2 Process and apparatus for hot-forging synthetic ceramic |
| 04/10/2008 | WO2008041499A1 Filming method for iii-group nitride semiconductor laminated structure |
| 04/10/2008 | WO2007143072B1 Wet etch suitable for creating square cuts in si and resulting structures |
| 04/10/2008 | DE112006000464T5 Chemischer Bedampfungs-Reaktor mit einer Vielzahl von Einlässen Chemical vapor deposition reactor comprising a plurality of inlets |
| 04/10/2008 | DE102007027111A1 Silicon disk, for use in electronic components, has a zone of rotational symmetry with a low bulk micro defect density |
| 04/10/2008 | DE102006045780A1 Mischkristalle der Form I und Form II der Acetylsalicylsäure Mixed crystals of Form I and Form II of the acetylsalicylic acid |
| 04/09/2008 | EP1909315A1 Silicon wafer and process for producing the same |
| 04/09/2008 | EP1908861A1 Silicon single crystal pulling apparatus and method thereof |
| 04/09/2008 | EP1908860A1 Process for producing crystal with supercrtical solvent, crystal growth apparatus, crystal, and device |
| 04/09/2008 | EP1396867B1 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy |
| 04/09/2008 | EP1154049B1 Method of manufacturing single-crystal silicon carbide |
| 04/09/2008 | CN101160420A Method for manufacturing silicon single crystal, and silicon wafer |
| 04/09/2008 | CN101158051A Method for rapidly growing mineral crystal druse |
| 04/09/2008 | CN101158050A Method for preparing monocrystalline germanium nano thread by solvent hot decomposition process |
| 04/09/2008 | CN101158049A Method for preparing P-type transparent conductive oxide CuAlO2 film |
| 04/09/2008 | CN101157452A Method for preparing nano silicon carbide |
| 04/09/2008 | CN100380684C Semiconductor-nanocrystal/conjugated polymer thin films |
| 04/09/2008 | CN100380675C High voltage micro-electronics device including GaN |
| 04/09/2008 | CN100380586C Method and apparatus for manufacturing single crystal silicon carbide |
| 04/09/2008 | CN100380580C Silicon semiconductor substrate and its manufacturing method |
| 04/09/2008 | CN100379902C Low-temperature solvent heat growth method of cadmium telluride single-crystal |
| 04/09/2008 | CN100379901C III-V nitride substrate boule and its manufacturing method and use |
| 04/08/2008 | US7355216 Fluidic nanotubes and devices |
| 04/08/2008 | US7354850 Directionally controlled growth of nanowhiskers |
| 04/08/2008 | US7354769 Comparing the ability of N,N-bis(3-D-gluconamidopropyl)-deoxycholamine to inhibit binding of IGFBP-1 or -3 to IGF-1 with the ability of a candidate indirect agonist of IGF-1 to identify effective agonists |
| 04/08/2008 | US7354619 Protection of the SiC surface by a GaN layer |
| 04/03/2008 | WO2008039816A1 Method and apparatus for the production of crystalline silicon substrates |
| 04/03/2008 | WO2008038693A1 Dopant gas injecting method |
| 04/03/2008 | WO2008038689A1 Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program |
| 04/03/2008 | WO2008038685A1 Zinc oxide particle, zinc oxide particle film, and processes for producing these |
| 04/03/2008 | WO2008038084A1 Process for producing a silicon carbide substrate for microelectronic applications |
| 04/03/2008 | US20080081767 Magnesium Oxide Single Crystal Having Controlled Crystallinity and Method for Producing the Same, and Substrate Using the Single Crystal |
| 04/03/2008 | US20080079024 Semiconductor heterostructures having reduced dislocation pile-ups and related methods |
| 04/03/2008 | US20080078207 Reinforcing method of silica glass substance and reinforced silica glass crucible |
| 04/02/2008 | EP1905874A1 Complex containing array of acicular crystal, method for producing the same, photoelectric conversion element, light emitting element and capacitor |
| 04/02/2008 | EP1905873A1 HEAT TREATMENT METHOD FOR ZnTe SINGLE CRYSTAL SUBSTRATE AND ZnTe SINGLE CRYSTAL SUBSTRATE |
| 04/02/2008 | EP1905872A1 Quartz glass crucible for pulling up of silicon single crystal and process for producing the quartz glass crucible |
| 04/02/2008 | EP1904901A1 Reinforced micromechanical part |
| 04/02/2008 | EP1567611B1 Method for preparing rare-earth halide blocks, blocks obtained and their use to form single crystals and single crystals obtained thereby. |
| 04/02/2008 | EP1377438A4 Preparation of nanocrystallites |
| 04/02/2008 | CN101155950A Silicon single crystal growing method, silicon wafer and soi substrate using such silicon wafer |
| 04/02/2008 | CN101155949A Gallium nitride light emitting devices on diamond |
| 04/02/2008 | CN101155948A Hydrodynamic cavitation crystallization device and process |
| 04/02/2008 | CN101153940A Three-dimensional laminated photon crystal implementing thermal radiation optical spectrum control |
| 04/02/2008 | CN100379006C SOI wafer and method for producing it |
| 04/02/2008 | CN100378994C Method for producing semi-conductor device |
| 04/02/2008 | CN100378257C Indium phosphide substrate, indium phosphide single crystal and process for producing them |
| 04/02/2008 | CN100378256C Method for synthesizing hexa-prism silicon carbide nano bar |
| 04/02/2008 | CN100378255C Growth control method for A-plane and M-plane GaN film material |
| 04/01/2008 | US7351993 Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
| 04/01/2008 | US7351347 Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate, and method of manufacturing gallium nitride substrate |
| 04/01/2008 | US7351286 One hundred millimeter single crystal silicon carbide wafer |
| 04/01/2008 | US7351284 Fullerene crystal and method for producing same |
| 04/01/2008 | CA2352985C Large-size monoatomic and monocrystalline layer, made of diamond-type carbon and device for making same |
| 03/27/2008 | WO2008036888A1 C-plane sapphire method and apparatus |
| 03/27/2008 | WO2008035793A1 Method for fabricating crystalline silicon grains |
| 03/27/2008 | WO2008035656A1 α-ALUMINA POWDER |
| 03/27/2008 | WO2008035632A1 PROCESS FOR PRODUCING GaN SINGLE-CRYSTAL, GaN THIN-FILM TEMPLATE SUBSTRATE AND GaN SINGLE-CRYSTAL GROWING APPARATUS |
| 03/27/2008 | WO2008034823A1 Method of producing precision vertical and horizontal layers in a vertical semiconductor structure |
| 03/27/2008 | WO2008034578A1 Process for the production of germanium-bearing silicon alloys |
| 03/27/2008 | WO2008034577A1 Process for the production of si by reduction of sihc13 with liquid zn |
| 03/27/2008 | WO2008034576A1 PRODUCTION OF Si BY REDUCTION OF SiCL4 WITH LIQUID Zn, AND PURIFICATION PROCESS |
| 03/27/2008 | WO2008034283A1 Beryllium borate fluoride salt nonlinear optical crystal, its growth method and uses |
| 03/27/2008 | US20080073650 Fabrication method for polycrystalline silicon thin film and apparatus using the same |
| 03/27/2008 | US20080072818 Growing a desired portion of the nanowire, growing a sacrificial portion of the nanowire that is doped differently than the desired portion, differentially removing the sacrificial portion, and removing a growth stub from the desired portion, especially by etching |
| 03/27/2008 | US20080072817 Silicon carbide single crystals with low boron content |
| 03/27/2008 | DE102006017622B4 Verfahren und Vorrichtung zur Herstellung von multikristallinem Silizium Method and apparatus for the production of multicrystalline silicon |
| 03/26/2008 | EP1903618A1 Method for producing trialkyl gallium |
| 03/26/2008 | EP1902163A1 Method for production of a bead single crystal |
| 03/26/2008 | CN101151402A Seventy five millimeter silicon carbide wafer with low warp, bow, and TTV |
| 03/26/2008 | CN101148781A Process for preparing zinc oxide ferro-electricity film |
| 03/26/2008 | CN101148780A Method for preparing twist silicon nitride ceramics crystal whisker |