| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 05/22/2008 | US20080118767 Material for Vapor Sources of Alkali and Alkaline Earth Metals and a Method of its Production |
| 05/22/2008 | US20080115721 Methods for forming alkali halide ingots into rectangular plates |
| 05/21/2008 | EP1923491A1 Single crystal material and process for producing the same |
| 05/21/2008 | EP1922759A2 Nanowires-based transparent conductors |
| 05/21/2008 | EP1922437A1 Method and apparatus for refining a molten material |
| 05/21/2008 | EP1809788A4 Method and apparatus for growing a group (iii) metal nitride film and a group (iii) metal nitride film |
| 05/21/2008 | EP1483782A4 Production method of sic monitor wafer |
| 05/21/2008 | EP1381718A4 Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques |
| 05/21/2008 | EP1098016B1 Single-crystal pulling apparatus |
| 05/21/2008 | DE112006001092T5 Herstellungsverfahren für Siliciumwafer Manufacturing method for silicon wafers |
| 05/21/2008 | CN101182646A Device and method for growing hemisphere type crystal by heat exchange method |
| 05/21/2008 | CN100389481C Substrate for nitride semiconductor growth |
| 05/21/2008 | CN100389233C Beta'-Sialon whisker gas phase reaction preparation method |
| 05/21/2008 | CN100389230C Process for preparing shape controllable cuprous oxide micro/nano crystal by electrochemical deposition |
| 05/20/2008 | US7375385 Semiconductor heterostructures having reduced dislocation pile-ups |
| 05/20/2008 | US7374817 Topological crystal of transition metal chalcogenide and method of forming the same |
| 05/20/2008 | US7374618 Group III nitride semiconductor substrate |
| 05/20/2008 | US7374617 Atomic layer deposition methods and chemical vapor deposition methods |
| 05/20/2008 | US7374616 Acentric lithium borate crystals, method for making, and applications thereof |
| 05/20/2008 | US7374614 Method for manufacturing single crystal semiconductor |
| 05/20/2008 | US7374613 Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation |
| 05/20/2008 | US7374612 Method of producing single-polarized lithium tantalate crystal and single-polarized lithium tantalate crystal |
| 05/15/2008 | WO2008057119A1 Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors |
| 05/15/2008 | WO2008056761A1 Process for producing single crystal of silicon carbide |
| 05/15/2008 | WO2008056760A1 Process for producing silicon carbide single crystal |
| 05/15/2008 | WO2008056758A1 Process for producing silicon carbide single crystal |
| 05/15/2008 | WO2008056195A1 A multi-chip package |
| 05/15/2008 | WO2008007336A3 A method for producing diamond material |
| 05/15/2008 | US20080112856 Method of preparing nanocrystals |
| 05/15/2008 | DE102007049778A1 Verfahren zum Herstellen eines Halbleitereinkristalls durch das Czochralski-Verfahren sowie Einkristallrohling und Wafer, die unter Verwendung derselben hergestellt werden A method for manufacturing a semiconductor single crystal by the Czochralski method, as well as single crystal ingot and wafers, which are prepared using the same |
| 05/14/2008 | EP1920080A2 High colour diamond |
| 05/14/2008 | EP1551768A4 Process for manufacturing a gallium rich gallium nitride film |
| 05/14/2008 | CN201058893Y Device for growing gallium-doped silicon monocrystal by czochralski method |
| 05/14/2008 | CN101180710A Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing substrate, and semiconductor element |
| 05/14/2008 | CN101180420A Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element |
| 05/14/2008 | CN100388424C Molecular beam epitaxy growth apparatus and method of controlling same |
| 05/14/2008 | CN100387936C Method for reducing sensitivity of crystals to damage effect of light intensity exposure |
| 05/14/2008 | CN100387761C InP monocrystal ingot annealing treatment method |
| 05/14/2008 | CN100387760C Method of producing self-supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer |
| 05/13/2008 | US7371666 with an emission spanning the visible spectrum; reacting a silicon precursor in the presence of a sheath gas with heat from a radiation beam under conditions effective to produce silicon nanoparticles; acid etching |
| 05/08/2008 | US20080108162 Light-Emitting Device Structure Using Nitride Bulk Single Crystal Layer |
| 05/08/2008 | US20080105193 Method and Apparatus for Crystal Growth |
| 05/07/2008 | EP1918429A1 Aluminum nitride single crystal film, aluminum nitride single crystal laminated substrate and processes for production of both |
| 05/07/2008 | EP1918428A2 Crystalline metal film |
| 05/07/2008 | EP1917101A2 Method for manufacture and coating of nanostructured components |
| 05/07/2008 | EP1335044B1 Zinc oxide semiconductor material |
| 05/07/2008 | EP1216316B1 Polishing of fluoride crystal optical lenses and preforms using cerium oxide for microlithography |
| 05/07/2008 | CN101175875A Method and apparatus for producing group III element nitride crystal, and group iii element nitride crystal |
| 05/07/2008 | CN101175874A Apparatus for manufacturing semiconductor single crystal |
| 05/07/2008 | CN101175873A Apparatus for manufacturing semiconductor single crystal |
| 05/07/2008 | CN101175872A Method for producing silicon single crystals and silicon single crystal produced thereby |
| 05/07/2008 | CN101174756A Calcium niobate laser crystal doped with ytterbium and method for producing the same |
| 05/07/2008 | CN101174617A Manufacturing method for semiconductor device, semiconductor device, and electronic equipment |
| 05/07/2008 | CN101174597A GaN single crystal substrate and method for processing surface of GaN single crystal substrate |
| 05/07/2008 | CN101172665A Method for producing monodisperse Fe*O* nanocrystal assisted with surface active agent |
| 05/07/2008 | CN100386845C Nitride semiconductor thin film and method for growing the same |
| 05/06/2008 | US7369758 Molecular beam source for use in accumulation of organic thin-films |
| 05/06/2008 | US7368308 Methods of fabricating semiconductor heterostructures |
| 05/06/2008 | US7368015 Apparatus for producing single crystal and quasi-single crystal, and associated method |
| 05/06/2008 | US7368014 Variable temperature deposition methods |
| 05/06/2008 | US7368013 Superabrasive particle synthesis with controlled placement of crystalline seeds |
| 05/06/2008 | US7368012 Methods and apparatuses for a dynamic growing of single-crystal thin-film composed of organic materials |
| 05/02/2008 | WO2008051585A2 Gallium nitride crystal |
| 05/02/2008 | WO2008051413A1 Reverse oxidation post-growth process for tailored gain profile in solid-state devices |
| 05/02/2008 | WO2008050524A1 Apparatus for producing single crystal and method for producing single crystal |
| 05/02/2008 | WO2008050476A1 Method for manufacturing epitaxial silicon wafer, and epitaxial silicon wafer |
| 05/01/2008 | US20080102313 Atomic layer chemical vapor deposition of hybrid organic inorganic coatings comprised of such as aluminium benzene oxides; optical properties |
| 05/01/2008 | US20080099768 Diamond Transistor And Method Of Manufacture Thereof |
| 04/30/2008 | EP1916321A1 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate |
| 04/30/2008 | EP1563122A4 Method for forming carbon nanotubes |
| 04/30/2008 | CN101168852A Mass production method for calcium sulfate whisker |
| 04/30/2008 | CN101168851A Epitaxial silicon wafer and fabrication method thereof |
| 04/30/2008 | CN101168850A Silicon single crystal manufacturing method and silicon wafer manufacturing method |
| 04/30/2008 | CN101168849A Silicon liquid overflow receiving device for polycrystalline silicon ingot casting furnace |
| 04/30/2008 | CN101168474A Method for manufacturing polycrystalline silicon thin film at low temperature |
| 04/30/2008 | CN100385701C Domain controlled piezoelectric monocrystal component and its mfg. method |
| 04/30/2008 | CN100385696C Epitaxial thin films |
| 04/30/2008 | CN100385619C Mask, method of making the same, and method of making thin film transistor using the same |
| 04/30/2008 | CN100385326C Silicon crystallizing device |
| 04/30/2008 | CN100385047C Production of single-crystal nano meter four-phase rod with lead zirconate titanate and perof skite |
| 04/30/2008 | CN100385046C Method for producing silicon wafer |
| 04/30/2008 | CN100385045C Process for growing lanthanum chloride crystal by falling method of antivacuum crucible |
| 04/30/2008 | CN100384716C Target material for metal oxide film, its preparation method, and method for producing metal oxide film |
| 04/29/2008 | US7364715 As-grown single crystal of alkaline earth metal fluoride |
| 04/29/2008 | US7364714 3C-SIC nanowhisker and synthesizing method and 3C-SIC nanowhisker |
| 04/29/2008 | US7364619 Process for obtaining of bulk monocrystalline gallium-containing nitride |
| 04/29/2008 | US7364617 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| 04/24/2008 | WO2008047907A1 Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element |
| 04/24/2008 | WO2008047881A1 Process for producing crystal silicon grain and crystal silicon grain production apparatus |
| 04/24/2008 | WO2008047637A1 Process for producing nitride semiconductor, crystal growth rate enhancement agent, nitride single crystal, wafer and device |
| 04/24/2008 | WO2008047627A1 Group iii element nitride substrate, substrate with epitaxial layer, processes for producing these, and process for producing semiconductor element |
| 04/24/2008 | US20080092803 Patterned atomic layer epitaxy |
| 04/23/2008 | EP1914795A1 Silicon wafer for semiconductor and manufacturing method thereof |
| 04/23/2008 | EP1914263A1 Single-crystalline organic carboxylic acid metal complex, process for producing the same, and use thereof |
| 04/23/2008 | EP1913182A1 Nanoparticles |
| 04/23/2008 | EP1912894A1 Separation of grown diamond from diamond seeds mosaic |
| 04/23/2008 | CN101167190A Diamond transistor and method of manufacture thereof |
| 04/23/2008 | CN101165228A Lithium niobate pn junction and preparation method thereof |
| 04/23/2008 | CN101165227A Method for synthesizing magnesium borate whisker by using bittern |
| 04/23/2008 | CN101165226A Thermal field energy-saving synergistic device for polycrystalline silicon ingot casting furnace |