Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
07/2008
07/16/2008CN101220508A Rod like ZnO monocrystal material and preparation thereof
07/16/2008CN101220507A Method for manufacturing silicon crystal plate for solar battery
07/16/2008CN101220506A Method for high concentration mass-synthesis of silver nano-wire
07/16/2008CN101220504A Method and apparatus for growing silicon carbide crystals
07/16/2008CN101220244A High surface quality GaN wafer and method of fabricating same
07/16/2008CN100402710C Method for developing large-scale fiber of organic molecular crystal
07/16/2008CN100402709C Process for preparing two-dimensional nano zinc oxide single chip
07/16/2008CN100402421C Tough diamonds and method of making thereof
07/15/2008US7399429 III-V semiconductor nanocrystal complexes and methods of making same
07/15/2008US7399360 Crucible and method of growing single crystal by using crucible
07/15/2008US7399356 Method for preparation of ferroelectric single crystal film structure using deposition method
07/15/2008US7399067 Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head
07/10/2008WO2008083073A1 Sapphire substrates and methods of making same
07/10/2008WO2005013326A3 Epitaxial growth of relaxed silicon germanium layers
07/10/2008DE112006002133T5 ZnO-Kristall, sein Aufwuchsverfahren und ein Herstellungsverfahren für eine Leuchtvorrichtung ZnO crystal, growth method and be a manufacturing method for a light emitting device
07/09/2008EP1942211A1 Method of and equipment for manufacturing group III nitride crystal
07/09/2008EP1941981A1 Method of forming scribe line on substrate of brittle material and scribe line forming apparatus
07/09/2008EP1456871B1 Susceptor for epitaxial growth
07/09/2008CN101218168A Semiconducting nanoparticles with surface modification
07/09/2008CN101217110A Group III nitride semiconductor substrate and its manufacturing method
07/09/2008CN100401602C Zinc oxide bluish violet light semiconductor growth using liquid phase epitaxial method
07/09/2008CN100401470C Method for controlling and removing fog-shaped micro-defect of silicon gas-phase epitaxial layer
07/09/2008CN100401460C Substrate locally with mono-crystalline gallium nitride and its preparing method
07/09/2008CN100400723C Heat treatment method after silicon carbide monocrystal growth
07/09/2008CN100400721C Process for producing wafer
07/09/2008CN100400720C Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof
07/09/2008CN100400719C Crystal whisker calcium carbonate preparation method
07/08/2008US7396411 Apparatus for manufacturing single crystal
07/08/2008US7396410 Featuring forming methods to reduce stacking fault nucleation sites
07/08/2008US7396409 Acicular silicon crystal and process for producing the same
07/08/2008US7396406 Single crystal semiconductor manufacturing apparatus and method
07/08/2008US7396405 Single crystal, single crystal wafer, epitaxial wafer, and method of growing single crystal
07/08/2008CA2508253C Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device
07/08/2008CA2433618C Method for manufacturing highly-crystallized double oxide powder
07/08/2008CA2346290C Production of bulk single crystals of silicon carbide
07/03/2008WO2008078666A1 Water-based polishing slurry for polishing silicon carbide single crystal substrate, and polishing method for the same
07/03/2008WO2008078401A1 Method for producing self-supporting nitride semiconductor substrate and self-supporting nitride semiconductor substrate
07/03/2008WO2008078302A2 Iii-nitride light emitting diodes grown on templates to reduce strain
07/03/2008WO2008078300A2 Iii-nitride light emitting diodes grown on templates to reduce strain
07/03/2008WO2008077386A2 METHOD FOR PRODUCING ONE-DIMENSIONAL COAXIAL Ge/SiCxNy HETEROSTRUCTURES, CORRESPONDING STRUCTURE AND USE OF SAID STRUCTURE
07/03/2008WO2007036950A8 Single-source precursor for semiconductor nanocrystals
07/03/2008US20080160872 Discharge electrode, a discharge lamp and a method for manufacturing the discharge electrode
07/03/2008US20080160306 Conversion of a precursor composition to nanoparticles is effected in the presence of a molecular cluster compound where molecules of cluster compound act as seed or nucleation point upon which nanoparticle growth may be initiated; high-temperature nucleation step is not required
07/03/2008US20080156255 Apparatus And Process For Crystal Growth
07/03/2008DE112005000715T5 Halbleitereinkristall-Herstellungsvorrichtung und Graphittiegel Semiconductor single crystal manufacturing apparatus and graphite crucible
07/02/2008EP1939333A1 Ferroelectric single crystal, surface acoustic filter making use of the same and process for producing the filter
07/02/2008EP1939332A1 Semiconductor crystal, and method and apparatus of production
07/02/2008EP1641965A4 Single-crystal-like materials
07/02/2008EP1537263A4 Semiconductor nanocrystal heterostructures
07/02/2008EP1415012A4 Process and apparatus for producing crystalline thin film buffer layers and structures having biaxial texture
07/02/2008CN101213327A Crystal production method using supercritical solvent, crystal growth apparatus, crystal, and device
07/02/2008CN101213020A Method for synthesis of carbon nanotubes
07/02/2008CN101212123A Ytterbium doped yttrium lanthanum calcium oxoborate laser crystal, producing method, and purpose
07/02/2008CN101212122A Ytterbium doped gadolinium lanthanum calcium oxoborate laser crystal, producing method, and purpose
07/02/2008CN101212121A Ytterbium doped kalium-lanthanum molybdate laser crystal, producing method, and purpose
07/02/2008CN101212120A Neodymium doped strontium barium niobate laser crystal, producing method, and purpose
07/02/2008CN101212119A Chromium doped aluminum-cesium molybdate tunable laser crystal
07/02/2008CN101210347A Method for preparing organic compound single-crystal nano structure
07/02/2008CN101210346A Horizontal zone melting method for growing tellurium zinc cadmium single-crystal
07/02/2008CN101210345A Device and method for growing zinc oxide film
07/02/2008CN100399058C An optical medium, an optical lens and a prism
07/02/2008CN100398703C Method for growing high-performance tube type sapphire
07/02/2008CN100398701C Method for treating crystal growth raw material
07/01/2008US7394129 SOI wafer and method for producing it
07/01/2008US7393763 Manufacturing method of monocrystalline gallium nitride localized substrate
07/01/2008US7393412 Method for manufacturing compound semiconductor epitaxial substrate
07/01/2008US7393410 Method of manufacturing nano-wire
07/01/2008US7393409 Method for making large-volume CaF2 single cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof
07/01/2008US7393213 Method for material growth of GaN-based nitride layer
06/2008
06/26/2008US20080153259 Soi wafer and method for producing it
06/26/2008US20080149020 Device and method to producing single crystals by vapour deposition
06/26/2008DE19717380B4 Verfahren zur Anbringung eines Schmelztiegels auf einer Halterung einer Einkristall-Ziehvorrichtung, sowie dabei verwendete Vorrichtung zum Zusammenfügen der Halterung und dabei verwendete Halterung A method of mounting a crucible on a support of a single crystal pulling apparatus, and thereby apparatus used for assembling the bracket and bracket used therein
06/26/2008DE112006002130T5 Steuersystem und Verfahren für ein gesteuertes Objekt in einem zeitvarianten System mit Totzeit, beispielsweise eine Einkristall-Produktionsvorrichtung durch das Czochralski-Verfahren A control system and method for a controlled object in a time-variant system with dead time, such as a single crystal production apparatus by the Czochralski method
06/26/2008DE102006062117A1 Verfahren zum Herstellen kristallisierten Siliciums sowie kristallisiertes Silicium A method for producing crystallized silicon and crystalline silicon
06/25/2008EP1936668A2 Nitride semiconductor substrate and manufacturing method thereof
06/25/2008EP1936012A2 Method for manufacturing crystallised silicon and crystallised silicon
06/25/2008EP1546672A4 Microfluidic chip for biomolecule crystallization
06/25/2008CN101208462A Process for producing fine diamond and fine diamond
06/25/2008CN101207174A 氮化物半导体衬底及其制造方法 The nitride semiconductor substrate and manufacturing method thereof
06/25/2008CN101207159A Titanium dioxide binary Na crystal porous membrane and preparation method thereof
06/25/2008CN101205629A Fluorescent silicon nitride based nano thread and preparation thereof
06/25/2008CN101205628A Sapphire crystal growth method
06/25/2008CN100397595C Method for manufacturing silicon wafer
06/25/2008CN100396828C Semiconductive GaAs wafer and method of making the same
06/25/2008CN100396827C Method for growing tantalic acid lithium in diameter of 5-inch single crystal
06/25/2008CN100396826C Process for preparing patterning titanium dioxide inverse opal photonic crystal
06/24/2008US7390807 Crystal forms of lamotrigine and processes for their preparations
06/24/2008US7390747 Nitride semiconductor substrate and method of producing same
06/24/2008US7390705 Method for crystallizing amorphous semiconductor thin film by epitaxial growth using non-metal seed and method for fabricating poly-crystalline thin film transistor using the same
06/24/2008US7390568 Semiconductor nanocrystal heterostructures having specific charge carrier confinement
06/24/2008US7390361 Semiconductor single crystal manufacturing apparatus and graphite crucible
06/19/2008WO2008072751A1 Method for producing group iii nitride-based compound semiconductor crystal
06/19/2008WO2008072479A1 Nanowire, device comprising nanowire, and their production methods
06/19/2008US20080143012 Novel Polymer Films and Textile Laminates Containing Such Polymer Films
06/19/2008US20080142926 Directionally controlled growth of nanowhiskers
06/19/2008US20080142846 Nitride semiconductor substrate and manufacturing method thereof
06/19/2008DE10259588B4 Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium Method and apparatus for producing a single crystal of silicon
06/18/2008CN101203635A Process for producing silicon carbide single crystal
06/18/2008CN101203634A Method for growing silicon single crystal
06/18/2008CN101200809A Method for synthesizing beryllium fluoroborate single-phase polycrystalline powder