Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
06/2008
06/18/2008CN101200808A Method for developing zinc oxide crystallite by chemical gas-phase transmitting process
06/18/2008CN101200127A Lanthanum zirconic acid/yttrium titanate film material and method for making same
06/18/2008CN100395380C Process for preparing barium tungstate single crystal with improved doping concentration of rare earth ion
06/18/2008CN100395379C Epitaxial growth process of high-crystallinity monocrystal indium nitride film
06/18/2008CN100395378C Preparation method for large-particle monocrystal diamond by DC plasma sedimentation
06/18/2008CN100395377C Method for preparing proton crystal
06/18/2008CN100395376C New CuI Crystal and growing method thereof
06/17/2008US7387835 Silicon carbide-coated carbonaceous material and carbonaceous material to be coated with silicon carbide
06/17/2008US7387679 Silicon carbide single crystal and method and apparatus for producing the same
06/17/2008US7387678 GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same
06/17/2008CA2346308C Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys
06/12/2008WO2008070458A1 System and method of forming a crystal
06/12/2008WO2008069028A1 Thin film manufacturing method and hexagonal piezoelectric thin film manufactured by the method
06/12/2008WO2008068009A1 A universal method for selective area growth of organic molecules by vapor deposition
06/12/2008WO2008067854A1 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate
06/12/2008WO2008067700A1 Dislocation-free silicon monocrystal, its preparation method and a graphite heating device used
06/12/2008US20080139808 Crystal forms of lamotrigine and processes for their preparations
06/12/2008US20080138518 Atomic Layer Epitaxy; feed reactants as vapor-phase pulses repeatedly and alternately from a separate source into reaction space; first reactant is zinc, zinc chloride,tetramethyl aluminum; second reactant is water, sulfur, hydrogen sulfide, ammonia; purge with inert gas between vapor depositions
06/12/2008US20080135875 RELAXED LOW-DEFECT SGOI FOR STRAINED Si CMOS APPLICATIONS
06/12/2008US20080135830 Semiconductor structures with structural homogeneity
06/12/2008US20080134962 Crystallization method and crystallization apparatus
06/12/2008US20080134958 System For Continuous Growing of Monocrystalline Silicon
06/12/2008US20080134957 Powder metallurgy crucible for aluminum nitride crystal growth
06/12/2008DE102007044924A1 Verfahren des Identifizierens von Kristalldefektbereichen in monokristallinem Silizium unter Verwendung von Metalldotierung und Wärmebehandlung Method of identifying crystal defect regions in monocrystalline silicon using metal doping and heat treatment
06/12/2008CA2671483A1 System and method of forming a crystal
06/11/2008EP1930485A1 METHOD FOR PRODUCTION OF GaxIn1-xN (0 x 1) CRYSTAL, GaxIn1-xN (0 x 1) CRYSTAL SUBSTRATE, METHOD FOR PRODUCTION OF GaN CRYSTAL, GaN CRYSTAL SUBSTRATE AND PRODUCT
06/11/2008EP1930484A1 Process for producing single crystal
06/11/2008EP1930483A1 Silicon electromagnetic casting apparatus and method for operating said apparatus
06/11/2008EP1930470A1 Diamond covered substrate, filtration filter, and electrode
06/11/2008EP1930469A1 Method of forming oxide-based nano-structured material
06/11/2008EP1930294A1 Method for producing group 13 metal nitride crystal, method for manufacturing semiconductor device, and solution and melt used in those methods
06/11/2008EP1930063A1 Method for preparation of nanoparticles and apparatus for the production thereof
06/11/2008CN101198727A Method for growing silicon single crystal and method for manufacturing silicon wafer
06/11/2008CN101195927A Method for producing large area polysilicon
06/11/2008CN100394550C Coated semiconductor wafer, and process and device for producing the semiconductor wafer
06/11/2008CN100394549C Semiconductor layer
06/11/2008CN100393923C Production of high-purity lithium tetraborate crystal by industrial lithium hydroxide and boric acid
06/11/2008CN100393921C Method for producing grain sizes even distributed antimony trioxide in single crystal type, and equipment
06/11/2008CN100393920C Method for preparing single crystal ZnO based rare magnetism semi-conducting nanometer rod blended by magnetic metal ion
06/11/2008CN100393919C Method for magnesium hydroxide whisker using giobertite as material
06/11/2008CN100393918C Method of preparing second-order non-linear optical materials, and uses thereof
06/10/2008US7384479 Laser diode having an active layer containing N and operable in a 0.6 μm wavelength
06/10/2008US7384477 Method for producing a single crystal and a single crystal
06/10/2008US7384476 Method for crystallizing silicon
06/10/2008CA2343739C Crystallization tray
06/05/2008WO2008066520A1 Antireflective surfaces, methods of manufacture thereof and articles comprising the same
06/05/2008WO2008066209A1 Process for producing diamond single crystal with thin film and diamond single crystal with thin film
06/05/2008US20080128761 Elongated structure element with second material on its end portions that differs from the first material in electrical conductivity, chemical reactivity, composition
06/05/2008US20080128708 GaN single crystal substrate and method for processing surface of GaN single crystal substrate
06/04/2008EP1928012A2 Semiconductor device and method of its manufacture
06/04/2008CN101194372A III-V semiconductor core-heteroshell nanocrystals
06/04/2008CN101194054A Composite comprising array of acicular crystal, process for producing the same, photoelectric conversion element, luminescent element, and capacitor
06/04/2008CN101194053A Method for producing gaxin1-xn(0<=x<=1=1) crystal, gaxin1-xn(0<=x<=1=1) crystalline substrate, method for producing gan crystal, gan crystalline substrate, and product
06/04/2008CN101194052A Low basal plane dislocation bulk grown SiC wafers
06/04/2008CN101194051A Method and apparatus for refining a molten material
06/04/2008CN101191839A Method and system stably for gain of radiation detector photomultipiler
06/04/2008CN101191253A Alkali metal borate compounds, single-crystal and preparation method thereof
06/04/2008CN100392444C Method for producing photon crystal and controllable defect therein
06/04/2008CN100392159C Method for solvent thermal reaction preparation of alpha-Si3N4 monocrystal nano wire
06/04/2008CN100392158C Method for preparing nano four-needle-shape zinc oxide crystal whisker
06/04/2008CN100392157C Poly-seed crystal preparation method for YBaCuO single domain superconductor
06/04/2008CN100391892C Quick preparing method for textured single phase hexagonal ferrite
06/03/2008US7381392 For producing directionally solidified Czochralski, float zone or multicrystalline silicon ingots, thin sheets and ribbons for the production of silicon wafers containing: 0.3 to 5.0 ppma boron, 0.1 to 10 ppma phosphorus, less than 150 ppma metallic elements and less than 100 ppma carbon
06/03/2008US7381268 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride
06/01/2008CA2612815A1 Low-density directionally solidified single-crystal superalloys
05/2008
05/29/2008WO2008062269A1 Reactor for growing crystals
05/29/2008WO2008061632A1 Process for the synthesis of nanosize metal-containing nanoparticles and nanoparticle dispersions
05/29/2008US20080124510 Large area, uniformly low dislocation density gan substrate and process for making the same
05/29/2008US20080124460 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby
05/29/2008DE102006057064A1 Application process for epitactic Group III nitride layer involves depositing Group III nitride layer on reconstructed surface of semiconductor
05/29/2008DE102006055038A1 Epitaxierte Halbleiterscheibe sowie Vorrichtung und Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe Epitaxially coated semiconductor wafer, as well as apparatus and method for producing an epitaxially coated semiconductor wafer,
05/29/2008CA2669883A1 Process for the synthesis of nanosize metal-containing nanoparticles and nanoparticle dispersions
05/28/2008EP1926134A1 Method for manufacturing silicon epitaxial wafers
05/28/2008EP1925697A1 AlN CRYSTAL AND METHOD FOR GROWING THE SAME, AND AlN CRYSTAL SUBSTRATE
05/28/2008EP1924361A1 Laboratory temperature control device with top face
05/28/2008CN201065442Y Multi-station automatic snatching discharging mechanism
05/28/2008CN101189367A Composite comprising array of acicular crystal, process for producing the same, photoelectric conversion element, luminescent element, and capacitor
05/28/2008CN101188195A A making method of multi-hole buffer layer for releasing stress
05/28/2008CN101187064A Cr5+: RVO4 crystal, preparation method and laser passive Q-Switched Device
05/28/2008CN101187063A Magnetic garnet material, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible
05/28/2008CN101187062A Yb Ca Ni doped gamet crystal and laser device
05/28/2008CN101187061A Method for doping Sb for growing Zn1-x MgxO crystal film
05/28/2008CN101187060A Needle, flake-shaped nano single crystal mg-al hydrotalcite Mg8Al2(OH)16CO3 4H2O preparation method
05/28/2008CN101187059A Silicon wafer having good intrinsic getterability and method for its production
05/28/2008CN101187058A Silicon wafer for semiconductor and manufacturing method thereof
05/28/2008CN101187055A High specific surface area single-crystal meso-pore calcium oxide particle preparation method
05/28/2008CN101187043A Preparation method for super long titanium dioxide nanotube array with photocatalytic performance
05/28/2008CN101186329A Method for preparing micron-level ZnO of octahedral structure
05/28/2008CN101185913A Method for separating metallicity and semiconductivity nano-tube from single wall carbon nano-tube
05/28/2008CN100390330C Method for preparing flake alpha Al2O3 monocrystal grains at low temperature
05/28/2008CN100390329C Zinc oxide single crystal
05/28/2008CN100390327C Method for growing lead lanthanum zirconate stannate titanate single-crystal utilizing composite fluxing agent
05/27/2008US7378926 Single crystalline magnetic garnet and YIG device
05/27/2008US7378684 Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
05/27/2008US7378071 Silicon wafer and method for producing silicon single crystal
05/27/2008US7377978 Method for producing silicon epitaxial wafer and silicon epitaxial wafer
05/22/2008WO2008059901A1 PROCESS FOR PRODUCTION OF GaN CRYSTALS, GaN CRYSTALS, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICES, AND APPARATUS FOR PRODUCTION OF GaN CRYSTALS
05/22/2008WO2008059875A1 Process for producing group iii element nitride crystal
05/22/2008WO2008059706A1 Process for production of multicrystal silicon and facility for production of multicrystal silicon
05/22/2008US20080118769 Dopant doping while growing the thin film at a first temperature; interrupting the growth of the thin film and annealing the thin film at a second temperature higher than the first temperature; high temperature lowly doped layer growing step of growing the thin film at the second temperature