Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
---|
06/18/2008 | CN101200808A Method for developing zinc oxide crystallite by chemical gas-phase transmitting process |
06/18/2008 | CN101200127A Lanthanum zirconic acid/yttrium titanate film material and method for making same |
06/18/2008 | CN100395380C Process for preparing barium tungstate single crystal with improved doping concentration of rare earth ion |
06/18/2008 | CN100395379C Epitaxial growth process of high-crystallinity monocrystal indium nitride film |
06/18/2008 | CN100395378C Preparation method for large-particle monocrystal diamond by DC plasma sedimentation |
06/18/2008 | CN100395377C Method for preparing proton crystal |
06/18/2008 | CN100395376C New CuI Crystal and growing method thereof |
06/17/2008 | US7387835 Silicon carbide-coated carbonaceous material and carbonaceous material to be coated with silicon carbide |
06/17/2008 | US7387679 Silicon carbide single crystal and method and apparatus for producing the same |
06/17/2008 | US7387678 GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same |
06/17/2008 | CA2346308C Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
06/12/2008 | WO2008070458A1 System and method of forming a crystal |
06/12/2008 | WO2008069028A1 Thin film manufacturing method and hexagonal piezoelectric thin film manufactured by the method |
06/12/2008 | WO2008068009A1 A universal method for selective area growth of organic molecules by vapor deposition |
06/12/2008 | WO2008067854A1 Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate |
06/12/2008 | WO2008067700A1 Dislocation-free silicon monocrystal, its preparation method and a graphite heating device used |
06/12/2008 | US20080139808 Crystal forms of lamotrigine and processes for their preparations |
06/12/2008 | US20080138518 Atomic Layer Epitaxy; feed reactants as vapor-phase pulses repeatedly and alternately from a separate source into reaction space; first reactant is zinc, zinc chloride,tetramethyl aluminum; second reactant is water, sulfur, hydrogen sulfide, ammonia; purge with inert gas between vapor depositions |
06/12/2008 | US20080135875 RELAXED LOW-DEFECT SGOI FOR STRAINED Si CMOS APPLICATIONS |
06/12/2008 | US20080135830 Semiconductor structures with structural homogeneity |
06/12/2008 | US20080134962 Crystallization method and crystallization apparatus |
06/12/2008 | US20080134958 System For Continuous Growing of Monocrystalline Silicon |
06/12/2008 | US20080134957 Powder metallurgy crucible for aluminum nitride crystal growth |
06/12/2008 | DE102007044924A1 Verfahren des Identifizierens von Kristalldefektbereichen in monokristallinem Silizium unter Verwendung von Metalldotierung und Wärmebehandlung Method of identifying crystal defect regions in monocrystalline silicon using metal doping and heat treatment |
06/12/2008 | CA2671483A1 System and method of forming a crystal |
06/11/2008 | EP1930485A1 METHOD FOR PRODUCTION OF GaxIn1-xN (0 x 1) CRYSTAL, GaxIn1-xN (0 x 1) CRYSTAL SUBSTRATE, METHOD FOR PRODUCTION OF GaN CRYSTAL, GaN CRYSTAL SUBSTRATE AND PRODUCT |
06/11/2008 | EP1930484A1 Process for producing single crystal |
06/11/2008 | EP1930483A1 Silicon electromagnetic casting apparatus and method for operating said apparatus |
06/11/2008 | EP1930470A1 Diamond covered substrate, filtration filter, and electrode |
06/11/2008 | EP1930469A1 Method of forming oxide-based nano-structured material |
06/11/2008 | EP1930294A1 Method for producing group 13 metal nitride crystal, method for manufacturing semiconductor device, and solution and melt used in those methods |
06/11/2008 | EP1930063A1 Method for preparation of nanoparticles and apparatus for the production thereof |
06/11/2008 | CN101198727A Method for growing silicon single crystal and method for manufacturing silicon wafer |
06/11/2008 | CN101195927A Method for producing large area polysilicon |
06/11/2008 | CN100394550C Coated semiconductor wafer, and process and device for producing the semiconductor wafer |
06/11/2008 | CN100394549C Semiconductor layer |
06/11/2008 | CN100393923C Production of high-purity lithium tetraborate crystal by industrial lithium hydroxide and boric acid |
06/11/2008 | CN100393921C Method for producing grain sizes even distributed antimony trioxide in single crystal type, and equipment |
06/11/2008 | CN100393920C Method for preparing single crystal ZnO based rare magnetism semi-conducting nanometer rod blended by magnetic metal ion |
06/11/2008 | CN100393919C Method for magnesium hydroxide whisker using giobertite as material |
06/11/2008 | CN100393918C Method of preparing second-order non-linear optical materials, and uses thereof |
06/10/2008 | US7384479 Laser diode having an active layer containing N and operable in a 0.6 μm wavelength |
06/10/2008 | US7384477 Method for producing a single crystal and a single crystal |
06/10/2008 | US7384476 Method for crystallizing silicon |
06/10/2008 | CA2343739C Crystallization tray |
06/05/2008 | WO2008066520A1 Antireflective surfaces, methods of manufacture thereof and articles comprising the same |
06/05/2008 | WO2008066209A1 Process for producing diamond single crystal with thin film and diamond single crystal with thin film |
06/05/2008 | US20080128761 Elongated structure element with second material on its end portions that differs from the first material in electrical conductivity, chemical reactivity, composition |
06/05/2008 | US20080128708 GaN single crystal substrate and method for processing surface of GaN single crystal substrate |
06/04/2008 | EP1928012A2 Semiconductor device and method of its manufacture |
06/04/2008 | CN101194372A III-V semiconductor core-heteroshell nanocrystals |
06/04/2008 | CN101194054A Composite comprising array of acicular crystal, process for producing the same, photoelectric conversion element, luminescent element, and capacitor |
06/04/2008 | CN101194053A Method for producing gaxin1-xn(0<=x<=1=1) crystal, gaxin1-xn(0<=x<=1=1) crystalline substrate, method for producing gan crystal, gan crystalline substrate, and product |
06/04/2008 | CN101194052A Low basal plane dislocation bulk grown SiC wafers |
06/04/2008 | CN101194051A Method and apparatus for refining a molten material |
06/04/2008 | CN101191839A Method and system stably for gain of radiation detector photomultipiler |
06/04/2008 | CN101191253A Alkali metal borate compounds, single-crystal and preparation method thereof |
06/04/2008 | CN100392444C Method for producing photon crystal and controllable defect therein |
06/04/2008 | CN100392159C Method for solvent thermal reaction preparation of alpha-Si3N4 monocrystal nano wire |
06/04/2008 | CN100392158C Method for preparing nano four-needle-shape zinc oxide crystal whisker |
06/04/2008 | CN100392157C Poly-seed crystal preparation method for YBaCuO single domain superconductor |
06/04/2008 | CN100391892C Quick preparing method for textured single phase hexagonal ferrite |
06/03/2008 | US7381392 For producing directionally solidified Czochralski, float zone or multicrystalline silicon ingots, thin sheets and ribbons for the production of silicon wafers containing: 0.3 to 5.0 ppma boron, 0.1 to 10 ppma phosphorus, less than 150 ppma metallic elements and less than 100 ppma carbon |
06/03/2008 | US7381268 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride |
06/01/2008 | CA2612815A1 Low-density directionally solidified single-crystal superalloys |
05/29/2008 | WO2008062269A1 Reactor for growing crystals |
05/29/2008 | WO2008061632A1 Process for the synthesis of nanosize metal-containing nanoparticles and nanoparticle dispersions |
05/29/2008 | US20080124510 Large area, uniformly low dislocation density gan substrate and process for making the same |
05/29/2008 | US20080124460 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
05/29/2008 | DE102006057064A1 Application process for epitactic Group III nitride layer involves depositing Group III nitride layer on reconstructed surface of semiconductor |
05/29/2008 | DE102006055038A1 Epitaxierte Halbleiterscheibe sowie Vorrichtung und Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe Epitaxially coated semiconductor wafer, as well as apparatus and method for producing an epitaxially coated semiconductor wafer, |
05/29/2008 | CA2669883A1 Process for the synthesis of nanosize metal-containing nanoparticles and nanoparticle dispersions |
05/28/2008 | EP1926134A1 Method for manufacturing silicon epitaxial wafers |
05/28/2008 | EP1925697A1 AlN CRYSTAL AND METHOD FOR GROWING THE SAME, AND AlN CRYSTAL SUBSTRATE |
05/28/2008 | EP1924361A1 Laboratory temperature control device with top face |
05/28/2008 | CN201065442Y Multi-station automatic snatching discharging mechanism |
05/28/2008 | CN101189367A Composite comprising array of acicular crystal, process for producing the same, photoelectric conversion element, luminescent element, and capacitor |
05/28/2008 | CN101188195A A making method of multi-hole buffer layer for releasing stress |
05/28/2008 | CN101187064A Cr5+: RVO4 crystal, preparation method and laser passive Q-Switched Device |
05/28/2008 | CN101187063A Magnetic garnet material, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible |
05/28/2008 | CN101187062A Yb Ca Ni doped gamet crystal and laser device |
05/28/2008 | CN101187061A Method for doping Sb for growing Zn1-x MgxO crystal film |
05/28/2008 | CN101187060A Needle, flake-shaped nano single crystal mg-al hydrotalcite Mg8Al2(OH)16CO3 4H2O preparation method |
05/28/2008 | CN101187059A Silicon wafer having good intrinsic getterability and method for its production |
05/28/2008 | CN101187058A Silicon wafer for semiconductor and manufacturing method thereof |
05/28/2008 | CN101187055A High specific surface area single-crystal meso-pore calcium oxide particle preparation method |
05/28/2008 | CN101187043A Preparation method for super long titanium dioxide nanotube array with photocatalytic performance |
05/28/2008 | CN101186329A Method for preparing micron-level ZnO of octahedral structure |
05/28/2008 | CN101185913A Method for separating metallicity and semiconductivity nano-tube from single wall carbon nano-tube |
05/28/2008 | CN100390330C Method for preparing flake alpha Al2O3 monocrystal grains at low temperature |
05/28/2008 | CN100390329C Zinc oxide single crystal |
05/28/2008 | CN100390327C Method for growing lead lanthanum zirconate stannate titanate single-crystal utilizing composite fluxing agent |
05/27/2008 | US7378926 Single crystalline magnetic garnet and YIG device |
05/27/2008 | US7378684 Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates |
05/27/2008 | US7378071 Silicon wafer and method for producing silicon single crystal |
05/27/2008 | US7377978 Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
05/22/2008 | WO2008059901A1 PROCESS FOR PRODUCTION OF GaN CRYSTALS, GaN CRYSTALS, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICES, AND APPARATUS FOR PRODUCTION OF GaN CRYSTALS |
05/22/2008 | WO2008059875A1 Process for producing group iii element nitride crystal |
05/22/2008 | WO2008059706A1 Process for production of multicrystal silicon and facility for production of multicrystal silicon |
05/22/2008 | US20080118769 Dopant doping while growing the thin film at a first temperature; interrupting the growth of the thin film and annealing the thin film at a second temperature higher than the first temperature; high temperature lowly doped layer growing step of growing the thin film at the second temperature |