Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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12/23/1992 | EP0519608A1 Substrate holder of thermally anisotropic material used for enhancing uniformity of grown epitaxial layers |
12/22/1992 | US5173445 Method of making p-type compound semiconductor employing trimethylgallium, trimethylarsenic and arsine |
12/22/1992 | US5173336 Guide with upstream converging section to accelerate flow and downstream diverging section to expand flow and prevent recirculation |
12/22/1992 | US5173283 Platelets for producing silicon carbide platelets and the platelets so-produced |
12/16/1992 | EP0518800A2 Heteroepitaxial growth of germanium on silicon by UHV/CVD |
12/16/1992 | EP0518631A2 Tool components |
12/16/1992 | EP0518544A2 Anisotropic deposition of dielectrics |
12/16/1992 | CN1019513B Composition film forming device |
12/11/1992 | CA2070750A1 Tool components |
12/09/1992 | EP0517042A1 Plasma-chemical vapor-phase epitaxy system |
12/08/1992 | US5169684 Wafer supporting jig and a decompressed gas phase growth method using such a jig |
12/08/1992 | US5169676 Control of crystallite size in diamond film chemical vapor deposition |
12/08/1992 | US5169453 Wafer supporting jig and a decompressed gas phase growth method using such a jig |
12/01/1992 | US5168077 Method of manufacturing a p-type compound semiconductor thin film containing a iii-group element and a v-group element by metal organics chemical vapor deposition |
11/17/1992 | US5164220 Method for treating diamonds to produce bondable diamonds for depositing same on a substrate |
11/17/1992 | US5164040 Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets |
11/17/1992 | US5164012 Heat treatment apparatus and method of forming a thin film using the apparatus |
11/11/1992 | EP0324810B1 Quartz glass reactor for mocvd installations |
11/03/1992 | US5160574 Reacting titanium halide and methane on nickel substrate in presence of carbon monoxide, tough ceramic reinforcement |
11/03/1992 | US5160545 Method and apparatus for epitaxial deposition |
11/03/1992 | US5160542 Apparatus for vaporizing and supplying organometal compounds |
11/03/1992 | US5160401 For use as substrates for high temperature superconducting films |
10/28/1992 | EP0510791A2 Flow verification for process gas in a wafer processing system, apparatus and method |
10/28/1992 | EP0510555A1 Process for the production of a layer system and layer system |
10/27/1992 | US5158643 Method for manufacturing zinc oxide whiskers |
10/24/1992 | CA2066847A1 Method of producing a layer system and a layer system as produced thereby |
10/20/1992 | US5156820 Reaction chamber with controlled radiant energy heating and distributed reactant flow |
10/20/1992 | US5156521 Method for loading a substrate into a GVD apparatus |
10/13/1992 | US5155336 Rapid thermal heating apparatus and method |
10/13/1992 | US5155062 Method for silicon carbide chemical vapor deposition using levitated wafer system |
10/13/1992 | CA1308689C Method and apparatus for forming a thin film |
10/07/1992 | EP0507611A1 Process for growing III-V semiconductor crystal by MOVPE |
10/07/1992 | EP0507497A1 Low temperature method for synthesizing diamond with high quality by vapor phase deposition |
10/07/1992 | EP0507400A2 Method of producing epitaxial layers of II-VI semiconductors with high acceptor concentrations |
10/06/1992 | US5152842 Reactor for epitaxial growth |
09/30/1992 | EP0506146A2 Method of producing sheets of crystalline material |
09/30/1992 | EP0506012A1 Apparatus for producing superconducting oxide film by MOCVD process |
09/29/1992 | US5151395 Bulk gas sorption and apparatus, gas containment/treatment system comprising same, and sorbent composition therefor |
09/29/1992 | US5151206 Mixing ferric oxide with carbon monoxide and hydrogen to produce iron carbides |
09/23/1992 | EP0505251A2 A method of growing group II-VI mixed compound semiconductor and an apparatus used therefor |
09/23/1992 | EP0505249A1 Apparatus for growing mixed compound semiconductor and growth method using the same |
09/23/1992 | EP0505112A1 Bi-Sr-Ca-Cu-O system superconducting thin film and method of forming the same |
09/23/1992 | EP0504886A1 A vapour depositing method and an apparatus therefor |
09/23/1992 | EP0504712A1 Process for producing single crystal silicon carbide layer |
09/22/1992 | US5149853 Source of metal for thin films and epitaxial layers by gas-phase deposition |
09/16/1992 | EP0503082A1 Device for generating microwave plasma and method of making diamond film utilizing said device |
09/15/1992 | US5148025 In situ composition analysis during growth vapor deposition |
09/09/1992 | EP0502657A1 Improved apparatus for producing diamonds by chemical vapor deposition and articles produced thereform |
09/09/1992 | EP0502209A1 Method and apparatus for growing compound semiconductor crystals |
09/09/1992 | EP0324812B1 Material-saving process for producing crystalline solid solutions |
09/08/1992 | US5145720 Chemical vapor deposition of dense and transparent zirconia films |
09/08/1992 | US5145493 Molecular restricter |
09/05/1992 | CA2062005A1 Apparatus for producing diamonds by chemical vapor deposition and articles produced therefrom |
09/03/1992 | WO1992015114A1 Semiconductor manufacturing equipment |
09/03/1992 | WO1992015113A1 Semiconductor device having an isolation region enriched in oxygen and a fabrication process thereof |
09/02/1992 | EP0501686A1 Fabrication of aluminium-containing semiconductor devices by metal-organic molecular-beam-epitaxy |
08/29/1992 | CA2059408A1 Fabrication of aluminum-containing semiconductor devices |
08/26/1992 | EP0500119A1 CVD diamond coated cutting tools and method of manufacture |
08/26/1992 | EP0499982A1 Method of forming a single crystal material |
08/19/1992 | EP0498887A1 Core wire connecting bridge for polycrystalline silicon manufacturing apparatuses |
08/18/1992 | CA1306374C Semiconductor heterointerface optical waveguide |
08/11/1992 | US5136978 Heat pipe susceptor for epitaxy |
08/06/1992 | DE4103086A1 Deposition of high purity silicon by thermal decomposition - using several microwave heating sources for even heating of substrates and reduced contamination levels |
08/05/1992 | EP0497350A1 Crystal growth method for gallium nitride-based compound semiconductor |
08/05/1992 | EP0497267A1 Semiconductor processing machine and suspension system for use in same |
08/04/1992 | US5135807 Diamond-coated member and process for the preparation thereof |
08/04/1992 | US5135391 Semiconductor processing gas diffuser plate |
08/04/1992 | US5135048 Active temperature differential control |
08/04/1992 | US5134963 LPCVD reactor for high efficiency, high uniformity deposition |
08/04/1992 | CA1305910C Chemical vapor deposition method for the gaas thin film |
07/28/1992 | US5133284 Gas-based backside protection during substrate processing |
07/22/1992 | EP0495524A1 System for processing a workpiece in a plasma and a process for generating such plasma |
07/21/1992 | US5132282 High temperature superconductor-strontium titanate sapphire structures |
07/21/1992 | US5132105 Materials with diamond-like properties and method and means for manufacturing them |
07/21/1992 | US5131842 Corrosion resistant thermal treating apparatus |
07/15/1992 | EP0494689A2 Thin film deposition method and apparatus |
07/14/1992 | US5130294 High temperature superconductor-calcium titanate structures |
07/14/1992 | US5130111 Vapor deposition and crystallization followed by molding and cooling |
07/14/1992 | US5130103 Crystal size controlled by nucleation density |
07/08/1992 | EP0493609A1 Method and device for manufacturing diamond |
07/07/1992 | US5128515 Heating apparatus |
07/07/1992 | US5127983 Method of producing single crystal of high-pressure phase material |
07/02/1992 | DE4142877A1 CVD assembly - has structured separate delivery of reaction gas and inert gas to zones of wafer substrate on hot table in chamber |
07/01/1992 | EP0493002A1 Process for forming deposition film |
07/01/1992 | EP0492632A1 Process chamber purge module for semiconductor processing equipment |
07/01/1992 | EP0492159A1 Metal growth accelerator shell for the chemical vaporization deposition of diamond |
06/30/1992 | US5126574 Microtip-controlled nanostructure fabrication and multi-tipped field-emission tool for parallel-process nanostructure fabrication |
06/30/1992 | US5126206 Excellent electrical and thermal properties, high electrical resistance |
06/30/1992 | US5126200 Laser assisted fiber growth |
06/30/1992 | US5126168 Displacement with ammonia of Lewis base from its complex with borane; pyrolysis |
06/25/1992 | WO1992010437A1 Method for coating glass and other substrates |
06/25/1992 | CA2056473A1 Metal growth accelerator shell for the chemical vaporization deposition of diamond |
06/24/1992 | EP0491393A2 Vertically oriented CVD apparatus including gas inlet tube having gas injection holes |
06/23/1992 | US5124278 Reactive deposition for semiconductors using metal organic amines as metallic donors |
06/23/1992 | US5123995 Producing thin film on substrate using low temperature and high vacuum |
06/17/1992 | EP0490531A2 Devices based on Si/Ge |
06/17/1992 | DE4039828A1 Device for holding a semiconductor substrate base - is formed as three or multi point arrangement from a multi jaw chuck with adjustable clamping jaws etc. |
06/16/1992 | US5122845 Buffer layer on sapphire substrate |
06/16/1992 | US5122393 Reagent source for molecular beam epitaxy |
06/16/1992 | US5122223 Graphoepitaxy using energy beams |