| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 10/19/1993 | US5255258 Microprobe, preparation thereof and electronic device by use of said microprobe |
| 10/19/1993 | US5254530 Vapor deposition from organometallic complexes, carrier gas, oxidizing gas |
| 10/19/1993 | US5254481 Polycrystalline solar cell manufacturing method |
| 10/19/1993 | US5254210 Method and apparatus for growing semiconductor heterostructures |
| 10/19/1993 | US5254207 Method of epitaxially growing semiconductor crystal using light as a detector |
| 10/13/1993 | EP0565414A1 Method of manufacturing heteroepitaxial thin films and electronic devices |
| 10/12/1993 | US5252174 Method for manufacturing substrates for depositing diamond thin films |
| 10/12/1993 | US5252133 Vertically oriented CVD apparatus including gas inlet tube having gas injection holes |
| 10/12/1993 | US5252132 Apparatus for producing semiconductor film |
| 10/12/1993 | US5252131 Apparatus for gas source molecular beam epitaxy |
| 10/12/1993 | CA1322937C Process for selective formation of ii-vi group compound film |
| 10/12/1993 | CA1322935C Branched monoalkyl group v a compounds as mocvd element sources |
| 10/06/1993 | EP0378543B1 Gas injector apparatus for chemical vapor deposition reactors |
| 10/06/1993 | EP0364597B1 Photoconductive cell |
| 10/05/1993 | US5250149 Method of growing thin film |
| 10/05/1993 | US5250148 Process for growing GaAs monocrystal film |
| 10/05/1993 | US5250147 Epitaxial growth; depositing second component in from to produce precipitate or inclusions in first component; heat treatment to redist ribute and coalesce |
| 10/05/1993 | US5250135 Metallo-organic vapor phase epitaxy by controlled diffusion of solid phase complex which then reacts with complexing agent to yield new, more stable complex |
| 10/05/1993 | US5250092 Exhaust apparatus for epitaxial growth system |
| 09/29/1993 | EP0562574A2 Diamond crystal and method for forming the same |
| 09/29/1993 | EP0552249A4 Flame or plasma synthesis of diamond under turbulent and transition flow conditions |
| 09/28/1993 | US5248787 Volatile organic barium, strontium and calcium compounds |
| 09/28/1993 | US5248253 Thermal processing furnace with improved plug flow |
| 09/28/1993 | CA1322514C Thin film of single crystal of lna_cu_o___ having three-layered perovskite structure and process for producing the same |
| 09/22/1993 | EP0561588A1 Multilayer CVD diamond films |
| 09/22/1993 | EP0561511A2 Preheater for CVD diamond reactor |
| 09/21/1993 | US5246536 Method for growing single crystal thin films of element semiconductor |
| 09/21/1993 | US5246500 Vapor phase epitaxial growth apparatus |
| 09/21/1993 | CA2089288A1 Multilayer cvd diamond films |
| 09/14/1993 | US5244829 Organometallic vapor-phase epitaxy process using (CH3)3 As and CCl4 for improving stability of carbon-doped GaAs |
| 09/14/1993 | US5244694 Semiconductors, vapor deposition |
| 09/08/1993 | EP0559326A1 Compound semiconductor vapor phase epitaxial device |
| 09/07/1993 | US5242666 Apparatus for forming a semiconductor crystal |
| 09/07/1993 | US5242530 Receptive areas on a substrate, thin film transistors |
| 09/07/1993 | US5242501 Susceptor in chemical vapor deposition reactors |
| 08/31/1993 | US5240902 Substrate of single crystal of oxide, superconductive device using said substrate and method of producing said superconductive device |
| 08/29/1993 | CA2087771A1 Preheater for cvd diamond reactor |
| 08/25/1993 | EP0556615A2 Method of making synthetic diamond |
| 08/25/1993 | EP0556517A1 Diamond films |
| 08/24/1993 | US5238705 Carbonaceous protective films and method of depositing the same |
| 08/18/1993 | EP0555614A1 Metal-organic gas supply for MOVPE and MOMBE |
| 08/18/1993 | EP0555546A1 Plasma CVD apparatus and processes |
| 08/17/1993 | US5236545 Method for heteroepitaxial diamond film development |
| 08/17/1993 | US5236544 Monocrystal on insulating film |
| 08/11/1993 | EP0554538A2 Process and device for the heating of a material |
| 08/10/1993 | US5234862 Vacuum deposition at controlled temperature and pressure |
| 08/10/1993 | US5234716 For gas phase deposition of thin films |
| 08/10/1993 | CA1321121C Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same |
| 08/04/1993 | EP0554047A1 SiC single crystal growth |
| 08/04/1993 | EP0413834B1 Diamond-covered member and process for producing the same |
| 08/03/1993 | US5232869 Vapor deposition |
| 07/31/1993 | CA2060362A1 Deposition of highly oriented ptfe films and uses therefor |
| 07/28/1993 | EP0552547A1 Diamond films |
| 07/28/1993 | EP0552249A1 Flame or plasma synthesis of diamond under turbulent and transition flow conditions |
| 07/27/1993 | US5230925 Silica |
| 07/27/1993 | US5230768 Silicon carbide single crystals formed by crystallization |
| 07/27/1993 | CA1320625C Zinc oxide whiskers having a novel crystalline form and method for making the same |
| 07/21/1993 | EP0551730A1 Method for producing flat CVD diamond film |
| 07/20/1993 | US5229319 Method for producing compound semiconductors and apparatus therefor |
| 07/20/1993 | US5229093 Alumina and silica |
| 07/20/1993 | CA2034650C Ellipsometric control of material growth |
| 07/14/1993 | EP0550859A1 Tube apparatus for manufacturing semiconductor device |
| 07/13/1993 | US5227340 Chemical vapor deposition by passing carrier gas through diffuser and finely divided solid reactant source to heated substrate |
| 07/13/1993 | US5227330 Producing defect-free films |
| 07/13/1993 | US5227006 Method for selectively growing gallium-containing layers |
| 07/13/1993 | CA1320102C Method for forming a deposited film |
| 07/08/1993 | WO1993013242A1 Nucleation enhancement for chemical vapor deposition of diamond |
| 07/08/1993 | WO1993013015A1 Composite diamond grains and process for their production |
| 07/08/1993 | CA2125873A1 Nucleation enhancement for chemical vapor deposition of diamond |
| 07/07/1993 | EP0550058A2 A programmable multizone gas injector for single-wafer semiconductor processing equipment |
| 07/07/1993 | CN1021528C Pressure-reducing process and system for gas epitaxy of semiconductors |
| 07/06/1993 | US5225378 Preheating second process gas before reacting with the first process gas |
| 07/06/1993 | US5225366 Modified atomic layer epitaxial growth technique |
| 07/06/1993 | US5225032 Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade |
| 07/06/1993 | US5224513 Device for introducing reagents into an organometallic vapor phase deposition apparatus |
| 06/30/1993 | EP0549207A1 Diamond films |
| 06/30/1993 | EP0549187A1 Diamond films |
| 06/30/1993 | EP0549186A1 Diamond films |
| 06/30/1993 | EP0548926A1 Apparatus for vaporizing liquid raw material and apparatus for forming thin film |
| 06/30/1993 | EP0548368A1 Compound semiconductor and manufacturing method therefor |
| 06/29/1993 | CA1319587C Metalorganic chemical vapor depositing growth of group ii-vi semiconductor materials having improved compositional uniformity |
| 06/22/1993 | US5221647 Mixture of alumina, aluminum nitride, silicon nitride and free silicon |
| 06/22/1993 | US5221556 Gas injectors for reaction chambers in CVD systems |
| 06/22/1993 | US5221526 Production of silicon carbide whiskers using a seeding component to determine shape and size of whiskers |
| 06/22/1993 | US5221412 Vapor-phase epitaxial growth process by a hydrogen pretreatment step followed by decomposition of disilane to form monocrystalline Si film |
| 06/22/1993 | US5221367 Strained defect-free epitaxial mismatched heterostructures and method of fabrication |
| 06/22/1993 | US5221356 Apparatus for manufacturing semiconductor wafers |
| 06/19/1993 | WO1993012273A1 Synthesis of diamond by combustion method |
| 06/17/1993 | DE4241932A1 CVD to deliver reaction gas to form film of given compsn. - in which reaction zone is insulated from ambient air and reaction zone is linked to outlet channel |
| 06/17/1993 | DE4241431A1 Ferroelectric, Perovskite alkaline earth titanate layer prodn. - for superconductor or (opto)electronic use, by rapid, low temp. deposition of metal di:ketonate(s) with metal-di:ketonate-alcoholate(s) |
| 06/16/1993 | EP0546946A2 Film deposition apparatus |
| 06/16/1993 | EP0546754A1 Method for producing CVD diamond film |
| 06/16/1993 | EP0546752A1 CVD diamond growth on hydride-forming metal substrates |
| 06/15/1993 | US5220515 Flow verification for process gas in a wafer processing system apparatus and method |
| 06/14/1993 | CA2082729A1 Method for producing cvd diamond film substantially free of thermal stress-induced cracks |
| 06/14/1993 | CA2082728A1 Method for producing flat cvd diamond film |
| 06/14/1993 | CA2082711A1 Cvd diamond growth on hydride-forming metal substrates |
| 06/10/1993 | WO1993011068A1 Conversion of fullerenes to diamond |
| 06/09/1993 | EP0545238A2 Method of epitaxially growing a semiconductor crystal |
| 06/08/1993 | US5217564 Method of producing sheets of crystalline material and devices made therefrom |