| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 06/02/1993 | EP0544438A2 Method for selectively growing gallium-containing layers |
| 06/02/1993 | EP0544399A2 Epitaxial magnesium oxide as a buffer layer for formation of subsequent layers on tetrahedral semiconductors |
| 05/27/1993 | CA2083760A1 Epitaxial magnesium oxide as a buffer layer for formation of subsequent layers on tetrahedral semiconductors |
| 05/25/1993 | US5213997 Method for forming crystalline film employing localized heating of the substrate |
| 05/25/1993 | US5213985 Temperature measurement in a processing chamber using in-situ monitoring of photoluminescence |
| 05/25/1993 | US5213654 Vapor-phase epitaxial growth method for semiconductor crystal layers |
| 05/25/1993 | US5213497 Semiconductor processing gas diffuser plate |
| 05/25/1993 | CA1318261C Method of purifying and depositing group iiia and group va compounds to produce epitaxial films |
| 05/25/1993 | CA1318226C Diamond crystal growth process |
| 05/25/1993 | CA1318225C Resistance heater for diamond production by cvd |
| 05/19/1993 | EP0542291A1 Zinc oxide crystal and method of producing same |
| 05/18/1993 | US5212394 Compound semiconductor wafer with defects propagating prevention means |
| 05/18/1993 | US5211905 Uniform microstructure |
| 05/18/1993 | US5211758 Chemical vapor deposition apparatus |
| 05/18/1993 | US5210959 Ambient-free processing system |
| 05/18/1993 | CA1317857C Homoepitaxial growth of alpha-sic thin films and semiconductor devices fabricated thereon |
| 05/11/1993 | US5209952 Use of organometallic compounds to deposit thin films from the gas phase |
| 05/11/1993 | US5209916 Conversion of fullerenes to diamond |
| 05/05/1993 | EP0540366A1 Tool insert |
| 05/05/1993 | EP0540082A1 LPCVD reactor for high efficiency, high uniformity deposition and a method of such deposition |
| 05/04/1993 | US5207863 Crystal growth method and crystalline article obtained by said method |
| 05/04/1993 | US5207835 High capacity epitaxial reactor |
| 05/01/1993 | CA2081631A1 Tool insert |
| 04/28/1993 | EP0538611A1 Multilayered composition with a single crystal beta-silicon carbide layer |
| 04/27/1993 | US5205900 Making laser beam incident on surface of growing crystal, detecting diffracted laser beam from surface |
| 04/21/1993 | EP0537854A1 Method of manufacturing a semiconductor device whereby a layer of material is deposited on the surface of a semiconductor wafer from a process gas |
| 04/21/1993 | EP0293439B1 Semi-insulating group iii-v based compositions |
| 04/20/1993 | US5204145 Apparatus for producing diamonds by chemical vapor deposition and articles produced therefrom |
| 04/20/1993 | US5204138 From silane, perfluorosilane and nitrogen gases |
| 04/20/1993 | CA1316436C Accelerated whisker growth on iron-chromium-aluminum alloy foil |
| 04/15/1993 | WO1993007312A1 Method of coating substrates |
| 04/14/1993 | EP0537049A1 Process for the growth of heteroepitaxial layers |
| 04/13/1993 | US5202105 Method for making hexagonal silicon carbide platelets with the addition of a growth additive |
| 04/07/1993 | EP0535308A1 Device for introducing reagents into an organometallic vapour phase deposition apparatus |
| 04/06/1993 | US5200157 Susceptor for vapor-growth deposition |
| 04/06/1993 | US5200022 Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product |
| 04/06/1993 | US5199603 Delivery system for organometallic compounds |
| 04/01/1993 | WO1993006619A1 Apparatus for introducing gas, and apparatus and method for epitaxial growth |
| 04/01/1993 | DE4130952A1 Mirror surfaced heating furnace - for reflecting radiation beam inside heating zone and using reflected beam as heating source |
| 03/31/1993 | EP0534729A2 Method for obtaining thick, adherent diamond coatings |
| 03/31/1993 | EP0533678A1 Ellipsometric control of material growth |
| 03/30/1993 | US5198071 Process for inhibiting slip and microcracking while forming epitaxial layer on semiconductor wafer |
| 03/28/1993 | CA2076086A1 Method for obtaining thick, adherent diamond coatings using metal interface screens |
| 03/24/1993 | EP0532758A1 Cvd semiconductor manufacturing equipment |
| 03/18/1993 | WO1993005208A1 Enhanced heteroepitaxy |
| 03/18/1993 | WO1993005207A1 Method of nucleating diamond and article produced thereby |
| 03/17/1993 | EP0531354A1 Process for the measurement of the thickness and refractive index of a thin film on a substrate, and a device for carrying out the process. |
| 03/17/1993 | EP0531348A1 Process for producing unagglomerated single crystals of aluminum nitride |
| 03/10/1993 | EP0531085A2 Isotopic diamond coated products and their production |
| 03/10/1993 | EP0530440A1 Copper oxide whiskers and process for producing the same |
| 03/09/1993 | US5192589 Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity |
| 03/09/1993 | US5192393 Crystallization of silicon by neutralization and activation |
| 03/04/1993 | WO1993004210A1 Method for forming oxide film |
| 03/04/1993 | CA2076087A1 Isotopic diamond coated products and their production |
| 03/03/1993 | EP0530021A2 Diamond film and method of producing same |
| 03/03/1993 | EP0529982A1 Exhaust apparatus for epitaxial growth system. |
| 03/03/1993 | CA2068437A1 Copper oxide whiskers and process for producing the same |
| 03/02/1993 | US5190913 Chemical vapor deposition |
| 03/02/1993 | US5190738 Process for producing unagglomerated single crystals of aluminum nitride |
| 03/02/1993 | US5190613 Method for forming crystals |
| 03/01/1993 | EP0610175A4 High temperature superconducting films on aluminum oxide substrates. |
| 02/24/1993 | EP0528592A1 Method for selective CVD diamond deposition |
| 02/24/1993 | EP0528405A2 Ambient-free processing system |
| 02/23/1993 | US5188672 Reduction of particulate contaminants in chemical-vapor-deposition apparatus |
| 02/23/1993 | US5188058 Uniform gas flow CVD apparatus |
| 02/23/1993 | CA1313813C Film forming apparatus |
| 02/18/1993 | WO1993003196A1 Method for deposition of a metal |
| 02/16/1993 | US5187771 Heat processing apparatus utilizing a plurality of stacked heater holders |
| 02/16/1993 | US5187561 Metal single crystal line having a particular crystal orientation |
| 02/16/1993 | US5186756 MOCVD method and apparatus |
| 02/16/1993 | US5186750 Vacuum chamber having substrate holder, laser source and controller, vibration-proof base, for organometallic molecular beam epitaxy |
| 02/10/1993 | EP0526779A1 Pulsed gas plasma-enhanced chemical vapor deposition of silicon |
| 02/10/1993 | EP0526646A1 Semiconductor device having an isolation region enriched in oxygen and a fabrication process thereof. |
| 02/10/1993 | EP0526468A1 Diamond-on-a-substrate for electronic applications |
| 02/09/1993 | CA2072326A1 Method for selective cvd diamond deposition |
| 02/04/1993 | WO1993002232A1 Process for producing silicon carbide platelets and the platelets so produced |
| 02/02/1993 | US5183529 Fabrication of polycrystalline free-standing diamond films |
| 02/02/1993 | CA1313343C Metal organic vapor phase epitaxial growth of group iii-v semiconductor materials |
| 01/26/1993 | US5182093 Diamond deposition cell |
| 01/26/1993 | US5181964 Single ended ultra-high vacuum chemical vapor deposition (uhv/cvd) reactor |
| 01/26/1993 | CA1313247C Compound semiconductor light emitting device |
| 01/21/1993 | WO1993001614A1 Compound semiconductor and manufacturing method therefor |
| 01/20/1993 | EP0524114A1 Process for making a crystal with a lattice gradient |
| 01/20/1993 | EP0523639A2 Method for patterning metallo-organic precursor film and film products |
| 01/19/1993 | US5180435 Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer |
| 01/19/1993 | US5180000 Workpiece carrier with suction slot for a disk-shaped workpiece |
| 01/16/1993 | CA2071161A1 Method for patterning metallo-organic precursor film and method for producing a patterned ceramic film and film products |
| 01/13/1993 | EP0522842A1 Method and apparatus for synthesizing diamond in vapor phase |
| 01/12/1993 | US5178847 Process for producing ceramic raw materials |
| 01/12/1993 | US5178681 Suspension system for semiconductor reactors |
| 01/12/1993 | US5177878 Apparatus and method for treating flat substrate under reduced pressure in the manufacture of electronic devices |
| 01/07/1993 | EP0521473A1 Multi-layered composition containing crystalline silicon carbide |
| 01/07/1993 | EP0353256B1 Method of purifying and depositing group iiib and group vb compounds to produce epitaxial films |
| 01/07/1993 | EP0305461B1 Epitaxial installation |
| 12/30/1992 | EP0520365A1 Method of making a Bi-Sr-Ca-Cu-O superconductive film |
| 12/30/1992 | EP0520216A2 Fabrication of defect free silicon on an insulating substrate |
| 12/29/1992 | US5174983 Flowing together gaseous carbon and hydrogen source to form turbulent mixture which is excitied and become reactive and deposited on the substrate |
| 12/29/1992 | US5174825 Uniform gas distributor to a wafer |
| 12/29/1992 | US5174748 Chamber having a hot zone and a cold zone and at least one gas inlet tube |
| 12/23/1992 | WO1992022689A1 Process for making large-area single crystal diamond films |