Patents for C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or (4,769)
07/2008
07/09/2008CN100401471C Plasma processing chamber, potential controlling apparatus, method, program and storage medium
07/03/2008DE102006052586B4 Verfahren und Vorrichtung zur Reinigung der Abgase einer Siliziumdünnschicht-Produktionsanlage Method and apparatus for cleaning the exhaust gases of a silicon thin film production plant
07/02/2008CN101211752A Method and device for controlling wafer DC auto-bias and compensating electrostatic gravitational force between direct current electrode and water
07/02/2008CN101211751A Dry method etching method
07/02/2008CN100399516C Method for etching medium material
07/02/2008CN100399505C Air flow distribution equalized etching apparatus
06/2008
06/26/2008US20080149594 Apparatus and process for forming and handling porous materials
06/25/2008EP1183684B1 Reactive ion beam etching method and a thin film head fabricated using the method
06/25/2008CN101207062A Method for manufacturing substrate mounting table
06/25/2008CN101207061A Substrate mounting table and method for manufacturing same, substrate processing apparatus, and fluid supply mechanism
06/25/2008CN101207034A Chamber top cover and reaction chamber containing said top cover
06/25/2008CN101207033A Method for etching polysilicon
06/25/2008CN101207005A Method for interfering and calibrating light detection device
06/25/2008CN101207004A Method for controlling semiconductor silicon dies etching technique
06/25/2008CN101207003A Inner lining of wafer processing chamber and wafer processing chamber containing said inner lining
06/25/2008CN101207001A Exhaust device and reaction chamber containing the same
06/25/2008CN101206999A Inner lining and reaction chamber containing the same
06/25/2008CN101206997A Method for controlling defect in non-deposition manufacture process
06/25/2008CN100397590C Gate etching process
06/25/2008CN100397586C Polycrystalline silicon pulse etching process for improving anisotropy
06/25/2008CN100397570C Vacuum processing apparatus and method operation thereof
06/25/2008CN100397569C Substrate processing apparatus, control method adopted in substrate processing apparatus
06/25/2008CN100397567C Plasma reaction chamber
06/25/2008CN100397038C Etching volume measuring device and method, etching device
06/25/2008CN100396818C Dry treatment method for superconductor cavity
06/18/2008CN101202206A Reaction chamber inner lining and reaction chamber containing the inner lining
06/18/2008CN100395873C 等离子体蚀刻方法 The plasma etching method
06/18/2008CN100395867C Topology simulation system, topology simulation method
06/12/2008US20080135519 Plasma processing apparatus and control method thereof
06/11/2008CN101197251A Etching apparatus for edges of substrate
06/11/2008CN101197249A Reaction cavity lining and reaction cavity including the same
06/11/2008CN101195112A Gas injection apparatus
06/11/2008CN100394543C Gas supply member and plasma processing apparatus
06/11/2008CN100393913C Dry cleaning process in polycrystal silicon etching
06/05/2008DE4416525B4 Verfahren zur Herstellung einer Beschichtung erhöhter Verschleißfestigkeit auf Werkstückoberflächen, und dessen Verwendung A process for producing a coating of increased wear resistance on workpiece surfaces, and the use thereof
06/04/2008CN101192511A Vacuum processing device
06/04/2008CN100392824C Method and apparatus for generating gas plasma and method of manufacturing semiconductor
06/04/2008CN100392804C Semiconductor processing equipment having tiled ceramic liner
06/03/2008US7381292 Inductively coupled plasma generating apparatus incorporating serpentine coil antenna
05/2008
05/29/2008DE102006052586A1 Verfahren und Vorrichtung zur Reinigung der Abgase einer Siliziumdünnschicht-Produktionsanlage Method and apparatus for cleaning the exhaust gases of a silicon thin film production plant
05/28/2008CN201066682Y Gas distribution tray of semiconductor device
05/28/2008CN101188191A Method and structure of pattern mask for dry etching
05/28/2008CN100390957C Substrate supporting member and substrate processing apparatus
05/28/2008CN100390933C Gas supply unit, substrate processing apparatus, and supply gas setting method
05/14/2008CN101179023A Gas distribution control system, polysilicon gate etching and silicon chip shallow groove isolation etching method
05/14/2008CN101179005A Exhaust air system, semi-conductor manufacturing installation for manufacturing thin film by the same and method thereof
05/14/2008CN100388418C Components for substrate processing apparatus and manufacturing method thereof
05/13/2008US7371692 Method for manufacturing a semiconductor device having a W/WN/polysilicon layered film
05/13/2008US7371485 Multi-step process for etching photomasks
05/08/2008WO2008054774A2 Micromachined electrolyte sheet, fuel cell devices utilizing such, and micromachining method for making fuel cell devices
05/07/2008EP1918971A2 Method and apparatus for photomask plasma etching
05/07/2008EP1918776A1 Etching of nano-imprint templates using an etch reactor
05/07/2008CN101174552A Apparatus for semiconductor process
05/07/2008CN101174542A Gas injection apparatus
05/07/2008CN100386467C Method for regenerating container for plasma treatement, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma proce
04/2008
04/30/2008CN101170053A Plasma processing device, plasma processing method and storage medium
04/30/2008CN101170052A Apparatus for controlling plasma etching process
04/30/2008CN101170050A Cleaning method for reaction cavity room, forming method of protection film, and protection wafer
04/29/2008US7365020 Method for etching upper metal of capacitator
04/23/2008CN101165868A Wafer processing chamber liner and wafer processing chamber comprising same
04/23/2008CN101165855A Substrate stage and plasma processing apparatus
04/23/2008CN101165852A Method of plasma etching with pattern mask
04/16/2008CN101162701A Thimble for silicon chip up-down in etching equipment
04/16/2008CN101162692A Silicon chip etching method
04/16/2008CN101162689A Focus ring and plasma processing apparatus
04/16/2008CN101162685A Apparatus and method to improve uniformity and reduce local effect of process chamber
04/16/2008CN100382276C Substrate mounting table, substrate processing apparatus and substrate processing method
04/16/2008CN100382239C Method for electrically discharging substrate, substrate processing apparatus and program
04/16/2008CN100382238C Opening/closing mechanism for vacuum processing apparatus, and vacuum processing apparatus
04/16/2008CN100382237C Vacuum treatment device
04/16/2008CN100381390C Plasma resistant structural parts
04/09/2008EP1035757B1 Substrate electrode plasma generator and substance/material processing method
04/09/2008CN101159235A Method for dry-type clean dielectric layer opening etching reaction chamber
04/09/2008CN101159228A Processing gas supplying mechanism, supplying method and gas processing unit
04/09/2008CN100379897C Mask forming method, mask forming functional layer, dry etching method, and method of manufacturing an information recording medium
04/08/2008US7354853 Selective dry etching of tantalum and tantalum nitride
04/02/2008CN101154565A Heat-conducting gas supply mechanism, supply method and substrate processing device and method
04/02/2008CN101154558A Method for cleaning etching equipment component
04/02/2008CN101153396A Plasma etching method and device
03/2008
03/27/2008WO2008007134A3 Method of controlling contamination of a surface
03/26/2008EP0938741B1 Vacuum plasma processor having coil with intermediate portion coupling lower magnetic flux density to plasma than center and peripheral portions of the coil
03/26/2008CN101150061A A control method for semiconductor etching device
03/26/2008CN101150040A An exception monitoring device and method for controlled components in a micro-electronic engraving system
03/26/2008CN101150039A Gas injection device
03/26/2008CN101148765A Silicon chip etching method
03/26/2008CN100377314C Method for removing residual polymer in polysilicon etching technology
03/26/2008CN100377301C Gas injection and diffusion system
03/26/2008CN100377300C Reaction chamber for semiconductor treatment
03/26/2008CN100376723C Shielding plate for enhancing flow field uniformity
03/26/2008CN100376722C Control method for removing residual gas for etching process
03/20/2008US20080070032 Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
03/20/2008US20080069966 A protective film of oxides of aluminum and yttrium formed on an inner wall surface of the chamber and the internal exposed surfaces of the apparatus for processing semiconductor wafers; high-corrosion resistance and dielectric property; etching resistance; spraying yttrium, aluminum and amorphous garnet
03/19/2008CN101145498A Gas injection device
03/18/2008US7344652 Plasma etching method
03/12/2008CN101140859A Etching apparatus and etching method using the same
03/12/2008CN100374616C Plasma treating device with protective tube
03/05/2008CN101137267A Plasma generation apparatus and workpiece processing apparatus using the same
03/05/2008CN101136353A Substrate carrying mechanism and connecting method
03/05/2008CN101135033A Conductive, plasma-resistant member
03/05/2008CN100373542C Vacuum processing apparatus
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