Patents
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
04/2009
04/23/2009US20090101994 Semiconductor device and method for fabricating the same
04/23/2009US20090101986 Semiconductor device and electronic apparatus
04/23/2009US20090101977 Semiconductor device and method for manufacturing the same
04/23/2009US20090101970 Semiconductor Device and Method for Manufacturing the Same
04/23/2009US20090101968 Structure of semiconductor device and manufacturing method of the same
04/23/2009US20090101880 Phase change memory devices and methods for fabricating the same
04/23/2009US20090101879 Method for Making Self Aligning Pillar Memory Cell Device
04/21/2009US7521760 Integrated circuit chip with FETs having mixed body thickness and method of manufacture thereof
04/21/2009US7521706 Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same
04/21/2009US7521281 Methods of forming phase-changeable memory devices
04/16/2009US20090096024 Semiconductor device and manufacturing method thereof
04/16/2009US20090095951 Memory Device With Low Reset Current
04/16/2009US20090095948 Programmable Resistive Memory with Diode Structure
04/09/2009US20090091971 Semiconductor phase change memory using multiple phase change layers
04/09/2009US20090090981 Semiconductor device
04/08/2009CN100477317C A chalcogenide memory cell having a horizontal electrode and method for forming same
04/07/2009US7515454 CBRAM cell and CBRAM array, and method of operating thereof
04/07/2009US7514705 Phase change memory cell with limited switchable volume
04/07/2009US7514704 Phase-change memory device and method of manufacturing the same
04/02/2009US20090085102 Semiconductor device having vertical surrounding gate transistor structure, method for manufacturing the same, and data processing system
04/02/2009US20090085092 Non-volatile semiconductor memory device having an erasing gate
04/02/2009US20090085024 Phase change memory structures
04/01/2009CN100474448C Phase random access memory with high density
03/2009
03/26/2009US20090078993 Semiconductor device with reduced gate-overlap capacitance and method of forming the same
03/24/2009US7507986 Thermal isolation for an active-sidewall phase change memory cell
03/24/2009US7507985 Phase change memory and phase change recording medium
03/19/2009US20090073741 Nand-structured series variable-resistance material memories, processes of forming same, and methods of using same
03/19/2009US20090072305 Semiconductor device and method for manufacturing the same
03/19/2009US20090072218 Higher threshold voltage phase change memory
03/19/2009US20090072217 Integrated Circuits; Methods for Manufacturing an Integrated Circuit and Memory Module
03/19/2009US20090072213 Programmable Via Structure for Three Dimensional Integration Technology
03/19/2009US20090072212 Anti-fuse memory device
03/19/2009US20090072211 Resistive random access memory and method for manufacturing the same
03/17/2009US7504652 Phase change random access memory
03/12/2009US20090067215 Electric element, memory device, and semiconductor integrated circuit
03/12/2009US20090067214 Electric element, memory device, and semiconductor integrated circuit
03/12/2009US20090065860 Semiconductor device and method for manufacturing the same
03/12/2009US20090065761 Programmable fuse/non-volatile memory structures in beol regions using externally heated phase change material
03/10/2009US7501648 Phase change materials and associated memory devices
03/05/2009US20090059657 Cmos storage devices configurable in high performance mode or radiation tolerant mode
03/05/2009US20090059652 Resistive memory cell array with common plate
03/05/2009US20090057756 Trench MOSFET with Trench Termination and manufacture thereof
03/05/2009US20090057642 Memory Device
03/05/2009US20090057640 Phase-change memory element
02/2009
02/26/2009US20090052234 Phase-change random access memory device and semiconductor memory device
02/26/2009US20090050983 Semiconductor device and method of producing the same
02/26/2009US20090050981 Semiconductor device
02/26/2009US20090050974 Method, System and Apparatus for Gating Configurations and Improved Contacts in Nanowire-Based Electronic Devices
02/26/2009US20090050963 Stressed mos device and methods for its fabrication
02/26/2009US20090050957 Semiconductor device and method of manufacturing the same
02/26/2009US20090050871 Semiconductor device and process for producing the same
02/26/2009US20090050870 Integrated circuit including memory element with spatially stable material
02/26/2009US20090050868 Nonvolatile Memory Element
02/26/2009US20090050867 Feature formed beneath an existing material during fabrication of a semiconductor device and electronic systems comprising the semiconductor device
02/24/2009US7494922 Small electrode for phase change memories
02/19/2009US20090045471 Semiconductor device fabricated by selective epitaxial growth method
02/19/2009US20090045461 Active Device on a Cleaved Silicon Substrate
02/19/2009US20090045452 Structure and Method of Sub-Gate NAND Memory with Bandgap Engineered SONOS Devices
02/19/2009US20090045451 Semiconductor device and method of manufacturing the same
02/19/2009US20090045389 Phase change memory device and method for manufacturing the same
02/19/2009US20090045385 Integrated circuit including memory element with high speed low current phase change material
02/17/2009US7491965 Heat-shielded low power PCM-based reprogrammable eFUSE device
02/17/2009US7491963 Non-volatile memory structure
02/12/2009US20090039438 Negative Differential Resistance Pull Up Element For DRAM
02/12/2009US20090039337 Memory element and memory device
02/12/2009US20090039332 Resistive non-volatile memory device
02/12/2009US20090039331 Phase change material structures
02/12/2009US20090039330 Two-terminal resistance switching element with silicon, and semiconductor device
02/12/2009US20090039329 Integrated Circuit Having a Cell with a Resistivity Changing Layer
02/10/2009US7488968 Multilevel phase change memory
02/05/2009US20090032865 Semiconductor component and method for producing it
02/05/2009US20090032796 Phase change memory bridge cell
01/2009
01/29/2009US20090027955 Non-volatile memory devices including stacked nand-type resistive memory cell strings and methods of fabricating the same
01/29/2009US20090026527 Method for manufacturing semiconductor device and semiconductor device
01/29/2009US20090026520 Semiconductor device and manufacturing method thereof for reducing the area of the memory cell region
01/29/2009US20090026439 Phase Change Memory Cells Having a Cell Diode and a Bottom Electrode Self-Aligned with Each Other
01/29/2009US20090026436 Phase change memory devices and methods of forming the same
01/29/2009US20090026435 Phase change random access meomory and semiconductor device
01/29/2009US20090026434 Nonvolatile memory elements
01/29/2009US20090026433 Multistate nonvolatile memory elements
01/22/2009US20090021977 Phase change material containing carbon, memory device including the phase change material, and method of operating the memory device
01/22/2009US20090020793 Field effect transistor
01/22/2009US20090020745 Method of manufacturing semiconductor device having transition metal oxide layer and related device
01/22/2009US20090020741 Phase change memory device with reinforced adhesion force
01/22/2009US20090020740 Resistive memory structure with buffer layer
01/22/2009US20090020739 Method for Delineation of Phase Change Memory Cell Via Film Resistivity Modification
01/22/2009US20090020738 Integrated circuit including force-filled resistivity changing material
01/21/2009EP2016622A1 Semiconductor device for generating an oscillating voltage
01/20/2009US7479650 Method of manufacture of programmable conductor memory
01/20/2009US7479649 Vacuum jacketed electrode for phase change memory element
01/15/2009US20090014814 Power semiconductor device having improved performance and method
01/15/2009US20090014794 Mosfet with laterally graded channel region and method for manufacturing same
01/15/2009US20090014792 Power semiconductor device
01/15/2009US20090014703 Semiconductor memory device
01/14/2009CN101346829A The fabricating method of single electron transistor (set) by employing nano-lithographical technology in the semiconductor process
01/13/2009US7476892 Storage node, phase change memory device and methods of operating and fabricating the same
01/08/2009US20090008726 Method of manufacturing semiconductor device and semiconductor device
01/08/2009US20090008623 Methods of fabricating nonvolatile memory device and a nonvolatile memory device
01/08/2009US20090008620 Nonvolatile Memory Cells Employing a Transition Metal Oxide Layers as a Data Storage Material Layer and Methods of Manufacturing the Same
01/06/2009US7473921 Design that allows the magnitude of the associated switching current pulses to be reduced to a value that is compatible with modern integrated circuits
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