Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
12/2010
12/30/2010US20100327248 Cell patterning with multiple hard masks
12/28/2010US7858961 Phase change memory devices and methods for fabricating the same
12/23/2010US20100320436 Encapsulated phase change cell structures and methods
12/23/2010US20100320435 Phase-change memory and method of making same
12/21/2010US7855378 Phase change memory devices and methods for fabricating the same
12/16/2010US20100315866 Phase change memory device having multi-level and method of driving the same
12/16/2010US20100314598 Phase change memory device having bit-line discharge block and method of fabricating the same
12/14/2010US7851779 Medium for use in data storage, thermal energy storage and other applications, with functional layer made of different materials
12/14/2010US7851778 Non-volatile electrical phase change memory device comprising interfacial control layer and method for the preparation thereof
12/07/2010US7847278 Planar programmable metallization memory cells
11/2010
11/30/2010US7842999 Semiconductor memory device and method of manufacturing the same
11/30/2010US7842938 Programmable metallization cells and methods of forming the same
11/25/2010US20100295009 Phase Change Memory Cells Having Vertical Channel Access Transistor and Memory Plane
11/23/2010US7838873 Structure for stochastic integrated circuit personalization
11/23/2010US7838862 Phase random access memory with high density
11/23/2010US7838416 Method of fabricating phase change memory cell
11/23/2010US7838413 Method of manufacturing phase-change memory element
11/18/2010US20100288993 Phase change random access memory for actively removing residual heat and method of manufacturing the same
11/16/2010US7834342 Phase change material and methods of forming the phase change material
11/09/2010US7829878 Semiconductor device and manufacture method thereof
11/04/2010WO2010127122A1 Monolithic fbar-cmos structure such as for mass sensing
11/04/2010US20100277967 Graded metal oxide resistance based semiconductor memory device
11/04/2010US20100276654 Low Operational Current Phase Change Memory Structures
11/04/2010CA2760508A1 Monolithic fbar-cmos structure such as for mass sensing
11/02/2010US7825398 Memory cell having improved mechanical stability
10/2010
10/28/2010US20100270529 Integrated circuit 3d phase change memory array and manufacturing method
10/28/2010US20100270527 Phase-change memory device and method of manufacturing the phase-change memory device
10/26/2010US7820997 Resistor random access memory cell with reduced active area and reduced contact areas
10/21/2010US20100264396 Ring-shaped electrode and manufacturing method for same
10/19/2010US7816661 Air cell thermal isolation for a memory array formed of a programmable resistive material
10/19/2010US7816660 Lateral phase change memory
10/14/2010US20100259960 Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elements Having Vertical Bit Lines
10/14/2010US20100258781 Resistive switching memory element including doped silicon electrode
10/14/2010US20100258777 Diamond Type Quad-Resistor Cells of PRAM
10/14/2010US20100258776 Shallow Trench Type Quadri-Cell of Phase-Change Random Access Memory (PRAM)
10/13/2010CN101346829B The fabricating method of single electron transistor (set) by employing nano-lithographical technology in the semiconductor process
10/12/2010US7812335 Sidewall structured switchable resistor cell
09/2010
09/30/2010US20100243983 Controlled localized defect paths for resistive memories
09/28/2010US7804086 Phase change memory device having decreased contact resistance of heater and method for manufacturing the same
09/28/2010US7804085 Solid electrolyte switching element, and fabrication method of the solid electrolyte element, and integrated circuit
09/28/2010US7804083 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods
09/23/2010US20100237315 Diode structures and resistive random access memory devices having the same
09/23/2010US20100237311 Nonvolatile memory device and method of manufacturing the same
09/21/2010US7800095 Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory
09/21/2010US7800094 Resistance memory with tungsten compound and manufacturing
09/21/2010US7800093 Resistive memory including buried word lines
09/21/2010US7800092 Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using
09/14/2010US7795607 Current focusing memory architecture for use in electrical probe-based memory storage
09/07/2010US7791059 Electric device with phase change resistor
09/02/2010US20100219821 Vertical hall effect sensor
08/2010
08/31/2010US7786464 Integrated circuit having dielectric layer including nanocrystals
08/31/2010US7786461 Memory structure with reduced-size memory element between memory material portions
08/31/2010US7786460 Phase change memory device and manufacturing method
08/26/2010US20100213433 Non-volatile semiconductor storage device and method of manufacturing the same
08/24/2010US7781760 Thin film transistor, electro-optical device, and electronic apparatus
08/17/2010US7777215 Resistive memory structure with buffer layer
08/12/2010US20100200833 Semiconductor device including uniform contact plugs and a method of manufacturing the same
08/05/2010US20100193762 Non-volatile memory cell and fabrication method thereof
08/05/2010US20100193758 Programmable metallization memory cell with planarized silver electrode
07/2010
07/29/2010US20100190321 METHOD OF FABRICATING PHASE-CHANGE MEMORY DEVICE HAVING TiC LAYER
07/27/2010US7763880 Multi-terminal electrically actuated switch
07/22/2010US20100182828 Semiconductor storage device
07/22/2010US20100181549 Phase-Changeable Random Access Memory Devices Including Barrier Layers and Metal Silicide Layers
07/22/2010US20100181546 Nonvolatile semiconductor memory and manufacturing method thereof
07/22/2010US20100181545 Non-volatile memory cell and fabrication method thereof
07/20/2010US7759669 Phase change memory element with phase-change electrodes
07/20/2010US7759159 Variable resistance non-volatile memory cells and methods of fabricating same
07/20/2010US7759157 Gate oxide film structure for a solid state image pick-up device
07/15/2010US20100177553 Rewritable memory device
07/15/2010US20100176362 Polysilicon plug bipolar transistor for phase change memory
07/13/2010US7755076 4F2 self align side wall active phase change memory
07/13/2010US7755075 Phase-change memory device with minimized reduction in thermal efficiency and method of manufacturing the same
07/13/2010US7755074 Low area contact phase-change memory
07/08/2010US20100173479 Variable resistance memory devices and methods of forming variable resistance memory devices
07/08/2010US20100171086 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
07/06/2010US7750336 Resistive memory devices and methods of forming resistive memory devices
07/06/2010US7750335 Phase change material structure and related method
07/06/2010US7750332 Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device
07/01/2010US20100163837 Gunn diode
07/01/2010US20100163829 Conductive bridging random access memory device and method of manufacturing the same
07/01/2010US20100163827 Forming phase change memory cells
07/01/2010US20100163826 Method for active pinch off of an ovonic unified memory element
07/01/2010US20100163825 Forming phase change memories with a breakdown layer sandwiched by phase change memory material
07/01/2010US20100163824 Modulation of resistivity in carbon-based read-writeable materials
07/01/2010US20100163823 Resistive random access memory
07/01/2010US20100163820 Phase change memory device having a reduced contact area and method for manufacturing the same
07/01/2010US20100163819 Resistive memory device and method for fabricating the same
07/01/2010US20100163818 Forming a carbon passivated ovonic threshold switch
07/01/2010US20100163817 Self-heating phase change memory cell architecture
06/2010
06/29/2010US7745812 Integrated circuit including vertical diode
06/29/2010US7745811 Phase change memory devices and methods for fabricating the same
06/29/2010US7745810 Nanotube films and articles
06/29/2010US7745808 Differential negative resistance memory
06/24/2010US20100157653 Quad memory cell and method of making same
06/24/2010US20100155690 Cross-point cell nanoarray with anisotropic active organic layer
06/24/2010US20100155689 Quad memory cell and method of making same
06/24/2010US20100155684 Non-volatile memory device and method of forming the same
06/23/2010CN101755350A multi-layered chalcogenide and related devices having enhanced operational characteristics
06/22/2010US7741630 Resistive memory element and method of fabrication
06/17/2010US20100151665 Small electrode for phase change memories
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 ... 21