Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
03/2015
03/03/2015US8969845 Memory cells having storage elements that share material layers with steering elements and methods of forming the same
02/2015
02/24/2015US8963117 Reduction of forming voltage in semiconductor devices
02/24/2015US8963116 Wrap around phase change memory
02/24/2015US8962466 Low temperature transition metal oxide for memory device
02/17/2015US8957400 Phase-change memory cell
02/17/2015US8957398 Via-configurable high-performance logic block involving transistor chains
02/11/2015CN102414855B 如用于质量感测的单块fbar-cmos结构 Fbar-cmos monolithic structures such as for mass sensing
02/10/2015US8952351 Programmable impedance memory elements with laterally extending cell structure
02/10/2015US8952350 Non-volatile memory device and manufacturing method thereof
02/10/2015US8952348 Nonvolatile memory device, nonvolatile memory device group, and manufacturing method thereof
02/10/2015US8952347 Resistive memory cell array with top electrode bit line
02/04/2015EP2831915A1 Dna computing
02/03/2015US8946673 Resistive switching device structure with improved data retention for non-volatile memory device and method
02/03/2015US8946672 Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element
02/03/2015US8946671 Mask read only memory containing diodes and method of manufacturing the same
02/03/2015US8946668 Semiconductor device and method of manufacturing the same
02/03/2015US8946667 Barrier structure for a silver based RRAM and method
01/2015
01/27/2015US8941091 Gate electrode comprising aluminum and zirconium
01/21/2015CN103094478B 基于硅-分子复合体系单分子负微分电阻器件及制备方法 Molecular complex system of single molecule negative differential resistance of the device and preparation method - based on silicon
01/20/2015US8937291 Three-dimensional array structure for memory devices
01/13/2015US8933431 Dual-plane memory array
01/13/2015US8933430 Variable resistance memory device and method of manufacturing the same
01/13/2015US8933429 Using multi-layer MIMCAPs in the tunneling regime as selector element for a cross-bar memory array
12/2014
12/30/2014US8921820 Phase change memory cell with large electrode contact area
12/30/2014US8921818 Resistance variable memory structure
12/30/2014US8921817 Phase-change random access memory device having multi-levels and method of manufacturing the same
12/23/2014US8916848 Resistance change device and memory cell array
12/23/2014US8916846 Nonvolatile memory device
12/23/2014US8916845 Low operational current phase change memory structures
12/16/2014US8912524 Defect gradient to boost nonvolatile memory performance
12/16/2014US8912519 Variable resistive memory device and method of fabricating the same
12/16/2014US8912518 Resistive random access memory cells having doped current limiting layers
12/09/2014US8907316 Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
12/09/2014US8907315 Memory cells and methods of forming memory cells
12/02/2014US8901532 Non-volatile programmable device including phase change layer and fabricating method thereof
12/02/2014US8901529 Memory array with self-aligned epitaxially grown memory elements and annular FET
12/02/2014US8900930 Method to make RF-PCM switches and circuits with phase-change materials
11/2014
11/25/2014US8895953 Programmable memory elements, devices and methods having physically localized structure
11/25/2014US8895951 Closed loop sputtering controlled to enhance electrical characteristics in deposited layer
11/25/2014US8895950 Methods for passivating a carbonic nanolayer
11/25/2014US8895437 Method for forming staircase word lines in a 3D non-volatile memory having vertical bit lines
11/25/2014US8895421 III-N device structures and methods
11/18/2014US8890110 Vertical memory device and method of fabricating the same
11/18/2014US8890109 Resistive random access memory access cells having thermally isolating structures
11/18/2014US8890108 Memory device having vertical selection transistors with shared channel structure and method for making the same
11/11/2014US8884397 Memory device and storage apparatus
11/11/2014US8884263 Non-volatile memory device having conductive buffer pattern and method of fabricating the same
11/11/2014US8884260 Phase change memory element
11/11/2014US8883557 Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
10/2014
10/28/2014US8872152 IL-free MIM stack for clean RRAM devices
10/28/2014US8872151 Surface treatment to improve resistive-switching characteristics
10/21/2014US8866124 Diodes with native oxide regions for use in memory arrays and methods of forming the same
10/21/2014US8866123 Non-volatile memory device and production method thereof
10/21/2014US8866122 Resistive switching devices having a buffer layer and methods of formation thereof
10/21/2014US8866121 Current-limiting layer and a current-reducing layer in a memory device
10/21/2014US8866120 Semiconductor memory
10/21/2014US8866119 Memory device and method for manufacturing same
10/21/2014US8866117 Semiconductor storage device including a diode and a variable resistance element
10/21/2014US8865558 Method of forming a phase change material layer pattern and method of manufacturing a phase change memory device
10/14/2014US8860103 Semiconductor memory device
10/14/2014US8860003 Resistive memory device and fabrication method thereof
10/14/2014US8860001 ReRAM device structure
10/14/2014US8860000 Nonvolatile semiconductor memory device and method of manufacturing the same
10/07/2014US8853713 Resistive memory having confined filament formation
10/07/2014US8853665 Semiconductor constructions, memory cells, memory arrays and methods of forming memory cells
10/07/2014US8853664 Organic element and organic device including the same
10/07/2014US8853661 Metal aluminum nitride embedded resistors for resistive random memory access cells
09/2014
09/30/2014US8847194 Memory component including an ion source layer and a resistance change layer, and a memory device using the same
09/30/2014US8847193 Phase change current density control structure
09/30/2014US8847192 Resistive switching devices having alloyed electrodes and methods of formation thereof
09/30/2014US8847191 Programmable impedance memory elements, methods of manufacture, and memory devices containing the same
09/30/2014US8846418 Method of manufacturing quantum dot layer and quantum dot optoelectronic device including the quantum dot layer
09/25/2014WO2014150381A1 Nonvolatile resistive memory element with an oxygen-gettering layer
09/23/2014US8841648 Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
09/23/2014US8841646 Semiconductor storage device and method for manufacturing same
09/23/2014US8841644 Thermal isolation in memory cells
09/18/2014WO2014146003A1 Nonvolatile memory with semimetal or semiconductors electrodes
09/16/2014US8835898 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor
09/16/2014US8835897 Nonvolatile memory device having variable resistance memory cells
09/16/2014US8835896 Nonvolatile variable resistance element
09/16/2014US8835895 Memory device and fabrication process thereof
09/16/2014US8835894 Resistive memory structure and method for fabricating the same
09/16/2014US8835892 Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
09/09/2014US8830740 Semiconductor storage device
09/09/2014US8829483 Semiconductor device and manufacturing method thereof
09/09/2014US8828788 Forming electrodes for chalcogenide containing devices
09/02/2014US8822972 Non-volatile memory element and manufacturing method thereof
09/02/2014US8822971 Semiconductor memory device having three-dimensionally arranged resistive memory cells
09/02/2014US8822970 Phase-change memory device and flexible phase-change memory device insulating nano-dot
09/02/2014US8822969 Semiconductor memory devices and methods of forming the same
08/2014
08/26/2014US8816318 Nonvolatile memory device and method for manufacturing same
08/26/2014US8816317 Non-volatile resistive switching memories formed using anodization
08/19/2014US8809829 Phase change memory having stabilized microstructure and manufacturing method
08/19/2014US8809827 Thermally assisted MRAM with multilayer strap and top contact for low thermal conductivity
08/14/2014WO2014100749A3 A multi-level memory array having resistive elements for multi-bit data storage
08/12/2014US8804400 Variable resistance memory device and method of fabricating the same
08/12/2014US8803124 Creating an embedded reram memory from a high-K metal gate transistor structure
08/12/2014US8803123 Resistance change memory
08/12/2014US8803122 Method for forming a PCRAM with low reset current
08/12/2014US8803118 Semiconductor constructions and memory arrays
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