| Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062) |
|---|
| 03/04/2010 | US20100051892 Nonvolatile semiconductor memory apparatus and manufacturing method thereof |
| 03/02/2010 | US7671427 Method of manufacturing film bulk acoustic resonator using internal stress of metallic film and resonator manufactured thereby |
| 03/02/2010 | US7671356 Electrically rewritable non-volatile memory element and method of manufacturing the same |
| 03/02/2010 | US7671353 Integrated circuit having contact including material between sidewalls |
| 02/25/2010 | US20100046273 Resistance change nonvolatile memory device |
| 02/25/2010 | US20100044668 Hybrid mrar array structure and operation |
| 02/25/2010 | US20100044667 Semiconductor devices having a planarized insulating layer |
| 02/25/2010 | US20100044666 Resistive memory cells and devices having asymmetrical contacts |
| 02/25/2010 | US20100044665 Electronic component, and a method of manufacturing an electronic component |
| 02/25/2010 | US20100044664 Memory devices and methods of forming the same |
| 02/23/2010 | US7667221 Phase change memory devices and methods for fabricating the same |
| 02/23/2010 | US7667220 Multilevel-cell memory structures employing multi-memory with tungsten oxides and manufacturing method |
| 02/23/2010 | US7667218 Semiconductor integrated circuit device and method of manufacturing the same |
| 02/18/2010 | US20100039856 Programmable phase-change memory and method therefor |
| 02/18/2010 | US20100038623 Methods and apparatus for increasing memory density using diode layer sharing |
| 02/18/2010 | US20100038620 Integration methods for carbon films in two- and three-dimensional memories and memories formed therefrom |
| 02/18/2010 | US20100038617 Semiconductor memory device |
| 02/18/2010 | US20100038616 Nonvolatile semiconductor memory device and producing method thereof |
| 02/18/2010 | US20100038614 Methods of forming a phase change material, a phase change material, a phase change random access memory device including the phase change material, and a semiconductor structure including the phase change material |
| 02/16/2010 | US7663134 Memory array with a selector connected to multiple resistive cells |
| 02/16/2010 | US7663131 SyAF structure to fabricate Mbit MTJ MRAM |
| 02/11/2010 | US20100034016 Phase change memory structures and methods |
| 02/11/2010 | US20100032640 Memory cell that includes a carbon-based memory element and methods of forming the same |
| 02/11/2010 | US20100032638 Memory cell that includes a carbon-based memory element and methods of forming the same |
| 02/11/2010 | US20100032636 Non-volatile memory cell with enhanced filament formation characteristics |
| 02/11/2010 | US20100032635 Array of low resistive vertical diodes and method of production |
| 02/09/2010 | US7659534 Programmable via devices with air gap isolation |
| 02/04/2010 | US20100027320 Resistance variable element, resistance variable memory apparatus, and resistance variable apparatus |
| 02/04/2010 | US20100027319 Resistance change element, method for manufacturing the same, and semiconductor memory |
| 02/02/2010 | US7655941 Phase change memory device and method for fabricating the same |
| 01/28/2010 | US20100020593 Vertical string phase change random access memory device |
| 01/28/2010 | US20100019217 Phase-change memory device and method of fabricating the same |
| 01/28/2010 | US20100019216 Multi-layer phase-changeable memory devices |
| 01/28/2010 | US20100019215 Mushroom type memory cell having self-aligned bottom electrode and diode access device |
| 01/26/2010 | US7652279 Three-terminal cascade switch for controlling static power consumption in integrated circuits |
| 01/21/2010 | US20100012917 Semiconductor devic |
| 01/21/2010 | US20100012915 Phase-change memory device and method of fabricating the same |
| 01/21/2010 | US20100012914 Carbon-based resistivity-switching materials and methods of forming the same |
| 01/21/2010 | US20100012913 Multi-level phase change random access memory device |
| 01/21/2010 | US20100012911 Switching device |
| 01/19/2010 | US7649191 Forming a carbon layer between phase change layers of a phase change memory |
| 01/14/2010 | US20100008132 Resistance memory element, phase change memory element, resistance random access memory device, information reading method thereof, phase change random access memory device, and information reading method thereof |
| 01/14/2010 | US20100008128 Resistive nonvolatile memory element, and production method of the same |
| 01/14/2010 | US20100008127 Resistance variable element and resistance variable memory apparatus |
| 01/14/2010 | US20100008122 Memory Device And Method For Making Same |
| 01/14/2010 | US20100006814 Phase-change memory element |
| 01/14/2010 | US20100006813 Programmable metallization memory cells via selective channel forming |
| 01/14/2010 | US20100006811 Carbon-based interface layer for a memory device and methods of forming the same |
| 01/14/2010 | US20100006810 Memory device and method of manufacturing the same |
| 01/12/2010 | US7646069 High density integrated read-only memory (ROM) with reduced access time |
| 01/12/2010 | US7646006 Three-terminal cascade switch for controlling static power consumption in integrated circuits |
| 01/07/2010 | US20100002491 Resistance ram having oxide layer and solid electrolyte layer, and method for operating the same |
| 01/07/2010 | US20100001251 Phase change memory device in which a distance between a lower electrode and a ground line is increased to secure the sensing margin of a cell and method for manufacturing the same |
| 01/07/2010 | US20100001250 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods forming the same |
| 01/07/2010 | US20100001249 Semiconductor device enabling further microfabrication |
| 01/07/2010 | US20100001248 Phase-change memory cell with a patterned layer |
| 01/05/2010 | US7642540 Phase change random access memory and method of operating the same |
| 01/05/2010 | US7642539 Thin film fuse phase change cell with thermal isolation pad and manufacturing method |
| 01/05/2010 | US7642538 Switching element, line-switching device and logic circuit |
| 12/31/2009 | US20090323409 Methods for high speed reading operation of phase change memory and device employing same |
| 12/31/2009 | US20090321711 Nonvolatile memory element and manufacturing method thereof |
| 12/31/2009 | US20090321707 Intersubstrate-dielectric nanolaminate layer for improved temperature stability of gate dielectric films |
| 12/31/2009 | US20090321705 Phase change memory device and method for manufacturing the same |
| 12/24/2009 | US20090316473 Integrated circuit including vertical diode |
| 12/22/2009 | US7635855 I-shaped phase change memory cell |
| 12/17/2009 | US20090309087 Phase change memory cell having top and bottom sidewall contacts |
| 12/15/2009 | US7633079 Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material |
| 12/10/2009 | US20090305508 Integrated circuit with upstanding stylus |
| 12/10/2009 | US20090303780 Integrated circuit including an array of diodes coupled to a layer of resistance changing material |
| 12/10/2009 | US20090302303 Thin film memory system |
| 12/10/2009 | US20090302296 Ald processing techniques for forming non-volatile resistive-switching memories |
| 12/10/2009 | US20090302294 Multi-bit phase-change memory device |
| 12/03/2009 | US20090298223 Self-aligned in-contact phase change memory device |
| 12/03/2009 | US20090294752 Highly integrated phase change memory device having micro-sized diodes and method for manufacturing the same |
| 12/03/2009 | US20090294749 Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same |
| 11/26/2009 | US20090289243 Short bridge phase change memory cells and method of making |
| 11/26/2009 | US20090289242 Phase Change Memory With Tapered Heater |
| 11/26/2009 | US20090289241 Phase change memory devices and fabrication methods thereof |
| 11/24/2009 | US7622731 Cross-point memory array |
| 11/19/2009 | US20090283741 Method of forming a phase changeable structure |
| 11/19/2009 | US20090283740 Optimized solid electrolyte for programmable metallization cell devices and structures |
| 11/19/2009 | US20090283737 Nonvolatile storage device and method for manufacturing same |
| 11/17/2009 | US7619915 Resistive random access memory device |
| 11/12/2009 | US20090279350 Bipolar switching of phase change device |
| 11/12/2009 | US20090278110 Non-volatile resistive-switching memories formed using anodization |
| 11/12/2009 | US20090278109 Confinement techniques for non-volatile resistive-switching memories |
| 11/12/2009 | US20090278107 Phase change memory device |
| 11/11/2009 | EP2115793A1 Gunn diode |
| 11/10/2009 | US7615770 Integrated circuit having an insulated memory |
| 11/05/2009 | US20090272959 Non-Volatile Resistive-Switching Memories |
| 10/29/2009 | US20090269910 Method of fabricating phase change memory device |
| 10/29/2009 | US20090267047 Semiconductor memory device and manufacturing method thereof |
| 10/29/2009 | US20090267043 Phase change memory device resistant to stack pattern collapse and a method for manufacturing the same |
| 10/29/2009 | US20090267042 Integrated Circuit and Method of Manufacturing an Integrated Circuit |
| 10/27/2009 | US7608849 Non-volatile switching element, method for manufacturing the same, and integrated circuit having non-volatile switching elements |
| 10/22/2009 | US20090261316 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication |
| 10/22/2009 | US20090261312 Integrated circuit including an array of low resistive vertical diodes and method |
| 10/20/2009 | US7605435 Bi-directional MOSFET power switch with single metal layer |
| 10/15/2009 | US20090256132 Memory cell that includes a carbon-based memory element and methods of forming the same |
| 10/15/2009 | US20090256130 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same |