Patents
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
07/2013
07/16/2013US8487292 Resistance-switching memory cell with heavily doped metal oxide layer
07/16/2013US8487291 Programmable metallization memory cell with layered solid electrolyte structure
07/16/2013US8487290 RRAM with improved resistance transformation characteristic and method of making the same
07/11/2013US20130176766 Stateful negative differential resistance devices
07/11/2013US20130175496 Semiconductor memory device, memory chip, memory module, memory system and method for fabricating the same
07/11/2013US20130175494 Memory cells including top electrodes comprising metal silicide, apparatuses including such cells, and related methods
07/09/2013US8481990 Nonvolatile memory element
07/04/2013US20130171741 Method for fabricating variable resistance memory device
07/04/2013US20130168631 Non-volatile memory structure and method for fabricating the same
07/02/2013US8476614 Memory device and fabrication process thereof
07/02/2013US8476612 Method for forming a lateral phase change memory element
06/2013
06/27/2013WO2013090980A1 Monolithically integrated cmos and acoustic wave device
06/27/2013US20130161582 Conductive bridging memory device and method for manufacturing same
06/25/2013US8471234 Multilayer memristive devices
06/25/2013US8471233 Semiconductor memory and method of manufacturing the same
06/25/2013US8471232 Resistive memory devices including vertical transistor arrays and related fabrication methods
06/25/2013US8470646 Modulation of resistivity in carbon-based read-writeable materials
06/20/2013WO2013089940A1 Nonvolatile resistive memory element with a metal nitride containing switching layer
06/20/2013US20130153851 Stack type semiconductor memory device
06/20/2013US20130153848 Semiconductor memory device and method of manufacturing the same
06/18/2013US8466446 Atomic layer deposition of metal oxide materials for memory applications
06/18/2013US8466444 Three-terminal cascade switch for controlling static power consumption in integrated circuits
06/13/2013US20130146829 Resistive random access memory devices and methods of manufacturing the same
06/11/2013US8461565 Electrically actuated devices
06/11/2013US8461564 Memory devices having an embedded resistance memory with metal-oxygen compound
06/06/2013WO2013081945A1 Nonvolatile resistive memory element with a passivated switching layer
06/06/2013US20130140516 Protruding post resistive memory devices and methods of manufacturing the same
06/06/2013US20130140513 Thermally confined electrode for programmable resistance memory
06/06/2013US20130140512 Nonvolatile resistive memory element with a passivated switching layer
06/04/2013US8455854 Nonvolatile memory device including amorphous alloy metal oxide layer and method of manufacturing the same
06/04/2013US8455853 Memory devices and formation methods
05/2013
05/28/2013US8450712 Resistance switchable conductive filler for ReRAM and its preparation method
05/23/2013US20130126823 Memory device including transistor array with shared plate channel and method for making the same
05/23/2013US20130126817 E-fuses containing at least one underlying tungsten contact for programming
05/21/2013US8445880 Phase change memory device having bit-line discharge block and method of fabricating the same
05/21/2013US8445319 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element
05/14/2013US8440923 Electrical closing switch made from reactive composite materials
05/08/2013CN103094478A Unimolecule negative differential resistance device based on silicon-molecule compound system and preparation method
05/02/2013US20130105760 Semiconductor device
05/02/2013US20130105759 Stressed phase change materials
05/02/2013US20130105756 Phase-change memory device
04/2013
04/30/2013US8431920 Information recording and reproducing device for high-recording density
04/25/2013US20130099188 Phase-change memory device having multi-level cell and a method of manufacturing the same
04/23/2013US8426840 Nonvolatile memory cells having phase changeable patterns therein for data storage
04/23/2013US8426838 Phase-change memory
04/23/2013US8426837 Resistive memory device and method of manufacturing the same
04/18/2013US20130092894 Memory cells and memory cell arrays
04/16/2013US8421051 Resistance-change memory
04/16/2013US8421050 Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
04/11/2013US20130087756 Heat shield liner in a phase change memory cell
04/09/2013US8415651 Phase change memory cell having top and bottom sidewall contacts
04/09/2013US8415218 Atomic layer deposition epitaxial silicon growth for TFT flash memory cell
04/09/2013US8415197 Phase change memory device having an improved word line resistance, and methods of making same
04/04/2013US20130082232 Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
04/04/2013US20130082229 Mixed ionic-electronic conduction memory cell
04/04/2013US20130082228 Memory Device Using Multiple Tunnel Oxide Layers
03/2013
03/28/2013US20130077381 Highly integrated programmable non-volatile memory and manufacturing method thereof
03/28/2013US20130077379 Semiconductor memory device, semiconductor device and method of manufacturing semiconductor memory device
03/28/2013US20130075685 Methods and apparatus for including an air gap in carbon-based memory devices
03/26/2013US8405062 Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory device
03/21/2013US20130069029 Non-volatile memory device and manufacturing method of the same
03/19/2013US8399875 Nonvolatile memory element, and nonvolatile memory device
03/14/2013US20130065377 Interface layer improvements for nonvolatile memory applications
03/14/2013US20130064001 Resistance change nonvolatile memory device, semiconductor device, and method of manufacturing resistance change nonvolatile memory device
03/14/2013US20130062587 Resistive Switching Devices Having Alloyed Electrodes And Methods of Formation Thereof
03/14/2013US20130062586 Semiconductor Device and Manufacturing Method Thereof
03/12/2013US8395901 Vertically-stacked electronic devices having conductive carbon films
03/12/2013US8395139 1T1R resistive memory device and fabrication method thereof
03/12/2013US8395138 Nonvolatile semiconductor memory having buffer layer containing nitrogen and containing carbon as main component
03/07/2013WO2013032983A1 Addressable siox memory array with incorporated diodes
03/07/2013US20130058152 Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact
03/05/2013US8389971 Memory cells having storage elements that share material layers with steering elements and methods of forming the same
03/05/2013US8389969 Semiconductor memory using IGBT, insulated gate bipolar transistor, as selective element
02/2013
02/28/2013US20130051117 Integrated circuit with vertically integrated passive variable resistance memory and method for making the same
02/26/2013US8384060 Resistive memory device
02/19/2013US8378328 Phase change memory random access device using single-element phase change material
02/12/2013US8374018 Resistive memory using SiGe material
01/2013
01/31/2013US20130026436 Phase change memory electrode with sheath for reduced programming current
01/29/2013US8362457 Semiconductor device and method for fabricating the same
01/29/2013US8362456 Resistance change element and semiconductor device including the same
01/24/2013US20130021835 Resistive ram, method for fabricating the same, and method for driving the same
01/24/2013US20130021834 Memory device and method of manufacturing the same
01/22/2013US8358527 Multi-level nonvolatile memory devices using variable resistive elements
01/22/2013US8357920 Electronic component, and a method of manufacturing an electronic component
01/17/2013US20130017663 Method of forming a phase change material layer pattern and method of manufacturing a phase change memory device
01/17/2013US20130015421 Phase-change random access memory device and method of manufacturing the same
01/15/2013US8354661 Variable resistance memory device having reduced bottom contact area and method of forming the same
01/15/2013US8354660 Bottom electrodes for use with metal oxide resistivity switching layers
01/10/2013US20130009122 Non-volatile memory device having variable resistance element and method of fabricating the same
01/08/2013US8350248 Memory element and memory device
01/08/2013US8350247 Resistive random access memory having a solid solution layer and method of manufacturing the same
01/03/2013US20130005113 Method of manufacturing semiconductor device
01/03/2013US20130003436 Amorphous silicon rram with non-linear device and operation
01/03/2013US20130001506 Resistance change memory and method of manufacturing the same
01/03/2013US20130001501 Memory cell structures
01/01/2013US8344351 Phase change memory device with plated phase change material
01/01/2013US8344349 Electronic component, and a method of manufacturing an electronic component
01/01/2013US8344348 Memory device
01/01/2013US8344347 Multi-layer electrode structure
01/01/2013US8344343 Composite film for phase change memory devices
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