H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof

Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
05/2007
05/10/2007	US20070102691 Silver-selenide/chalcogenide glass stack for resistance variable memory
05/08/2007	US7214958 Phase change memory cell with high read margin at low power operation
05/08/2007	US7214632 Using selective deposition to form phase-change memory cells
05/03/2007	US20070096074 Electrically rewritable non-volatile memory element and method of manufacturing the same
05/01/2007	US7211819 Damascene phase change memory
05/01/2007	US7211143 Sacrificial template method of fabricating a nanotube
04/2007
04/26/2007	WO2007047311A2 Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells
04/24/2007	US7208751 Non-volatile semiconductor memory device allowing shrinking of memory cell
04/19/2007	US20070085068 Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells
04/17/2007	US7205562 Phase change memory and method therefor
04/17/2007	US7205171 Thin film transistor and manufacturing method thereof including a lightly doped channel
04/12/2007	US20070080336 Image sensors and methods of manufacturing the same
04/10/2007	US7202541 Apparatus and method for transverse characterization of materials
04/10/2007	US7202493 Chalcogenide memory having a small active region
04/05/2007	US20070075347 Phase change memory devices with reduced programming current
03/2007
03/29/2007	US20070069402 Lateral phase change memory
03/29/2007	US20070069193 Metal-insulator transition switching transistor and method for manufacturing the same
03/27/2007	US7196346 Semiconductor memory device and method for fabricating the same
03/22/2007	US20070063181 Memory device and method of making same
03/21/2007	CN1933209A Zinc oxide negative resistance device and producing method thereof
03/08/2007	US20070051936 Phase change memory cell with tubular heater and manufacturing method thereof
03/08/2007	US20070051935 Phase change random access memory and method of operating the same
03/06/2007	US7186998 Multi-terminal device having logic functional
03/01/2007	US20070045606 Shaping a phase change layer in a phase change memory cell
03/01/2007	US20070045605 Method for fabricating chalcogenide-applied memory
02/2007
02/22/2007	WO2007021451A2 Chalcogenide devices incorporating chalcogenide materials having reduced germanium or telluruim content
02/22/2007	WO2006052846A3 Programmable matrix array with chalcogenide material
02/15/2007	US20070034851 Chalcogenide devices and materials having reduced germanium or telluruim content
02/15/2007	US20070034850 Chalcogenide devices incorporating chalcogenide materials having reduced germanium or telluruim content
02/15/2007	DE112005000666T5 Verfahren und Vorrichtung zur Herstellung von Elementen Method and apparatus for the production of elements
02/08/2007	US20070029538 Method for fabricating an integrated device comprising a structure with a solid electrolyte
02/08/2007	US20070029537 Phase change memory cell and method of formation
02/06/2007	US7173271 Phase-change memory device and method of manufacturing the same
02/01/2007	US20070023744 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
01/2007
01/30/2007	US7170132 Twin insulator charge storage device operation and its fabrication method
01/30/2007	US7169635 Programmable structure, an array including the structure, and methods of forming the same
01/25/2007	US20070018149 Semiconductor device and method of producing the same
01/11/2007	US20070007613 Phase change memory with adjustable resistance ratio and fabricating method thereof
01/11/2007	DE102006014895A1 Gunn diode Gunn diode
01/10/2007	EP1740933A2 Apparatus and method for transverse characterization of materials
01/09/2007	US7161167 Lateral phase change memory
01/04/2007	US20070001160 Phase change material for high density non-volatile memory
12/2006
12/28/2006	US20060289851 Resistance variable memory device and method of fabrication
12/21/2006	US20060284160 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
12/14/2006	US20060281218 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method
12/13/2006	CN1879234A Multiple bit chalcogenide storage device
12/07/2006	US20060273297 Phase change memory cell having ring contacts
11/2006
11/30/2006	US20060270180 Methods of Forming Phase-Changeable Memory Devices
11/30/2006	US20060266993 Phase change random access memory devices and methods of operating the same
11/30/2006	US20060266992 Semiconductor storage device and manufacturing method thereof
11/30/2006	US20060266991 Phase change memory device and method for manufacturing the same
11/30/2006	US20060266931 Photodetector for optical encoder
11/23/2006	US20060261321 Low power phase change memory cell with large read signal
11/16/2006	US20060255328 Using conductive oxidation for phase change memory electrodes
11/14/2006	US7135373 Reduction of channel hot carrier effects in transistor devices
11/09/2006	US20060249725 Multilevel phase change memory
11/09/2006	US20060249723 Planarization process for semiconductor substrates
11/02/2006	US20060243956 Cross point memory array with fast access time
11/02/2006	US20060243955 Semiconductor integrated circuit device
11/02/2006	DE10337757B4 Halbleiterwafer mit asymmetrischem Kantenprofil und Herstellungsverfahren hierfür A semiconductor wafer with an asymmetric edge profile and manufacturing method thereof
11/01/2006	CN1855616A Fabricating method of gunn diode and gunn oscillator
10/2006
10/26/2006	WO2004081977A3 Multi-terminal chalcogenide switching devices
10/26/2006	US20060238955 Re-configurable mixed-mode integrated circuit architecture
10/26/2006	US20060238223 Multiplexer interface to a nanoscale-crossbar
10/26/2006	US20060237706 Non-volatile semiconductor memory and method for controlling a non-volatile semiconductor memory
10/26/2006	US20060237705 Method And Related Apparatus For Calibrating Signal Driving Parameters Between Chips
10/25/2006	EP1714359A2 110 oriented group iv-vi semiconductor structure, and method for making and using the same
10/24/2006	US7126149 Phase change memory and phase change recording medium
10/19/2006	US20060232347 Gunn diode
10/19/2006	US20060231824 Resistance variable memory with temperature tolerant materials
10/19/2006	US20060231822 Flash memory devices and methods of fabricating the same
10/17/2006	US7122862 Reduction of channel hot carrier effects in transistor devices
10/17/2006	US7122824 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
10/10/2006	US7119355 Lateral phase change memory and method therefor
10/10/2006	US7119354 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film
10/04/2006	CN1278398C Gunn diode fabricating method and gunn oscillator
09/2006
09/26/2006	US7113049 Device for generating oscillations in the high frequency range
09/26/2006	US7112836 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method
09/26/2006	US7112815 Multi-layer memory arrays
09/21/2006	US20060208249 Programmable conductor memory cell structure and method therefor
09/21/2006	US20060208247 Method and system for an integrated circuit supporting auto-sense of voltage for drive strength adjustment
09/14/2006	US20060203562 Twin insulator charge storage device operation and its fabrication method
09/12/2006	US7105870 Phase-changeable memory devices
09/12/2006	US7105396 Phase changeable memory cells and methods of fabricating the same
09/07/2006	US20060198200 Twin insulator charge storage device operation and its fabrication method
09/07/2006	US20060197087 Thin film transistor
09/05/2006	US7102151 Small electrode for a chalcogenide switching device and method for fabricating same
09/05/2006	US7102150 PCRAM memory cell and method of making same
09/05/2006	US7101728 Programmable structure including an oxide electrolyte and method of forming programmable structure
08/2006
08/10/2006	US20060175598 Memory device including barrier layer for improved switching speed and data retention
08/09/2006	EP1087867A4 Memory element with memory material comprising phase-change material and dielectric material
08/08/2006	US7087921 Active electronic device and electronic apparatus
08/02/2006	CN1813361A Field effect chalcogenide devices
07/2006
07/27/2006	US20060163554 Electric device comprising phase change material
07/20/2006	WO2006076378A1 Programmable matrix array with chalcogenide material
07/20/2006	US20060157683 Nonvolatile phase change memory cell having a reduced thermal contact area
07/18/2006	US7078240 Reliable adhesion layer interface structure for polymer memory electrode and method of making same
07/18/2006	US7078135 Mask can be used independently of its height tolerances and of the membrane holder to be mounted thereon for a distortion-free lithographic imaging
07/13/2006	WO2005076976A3 [110] oriented group iv-vi semiconductor structure, and method for making and using the same
07/13/2006	US20060151772 Support device for monolithically integrated circuits

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