Patents
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
07/2008
07/29/2008US7405418 Memory device electrode with a surface structure
07/24/2008US20080173861 Phase change memory devices, methods of manufacturing and methods of operating the same
07/24/2008US20080173859 Storage node and methods of forming the same, phase change memory device having a storage node and methods of fabricating and operating the same
07/24/2008US20080173858 Phase change memory devices including carbon-containing adhesive pattern, and methods of fabricating the same
07/22/2008US7402851 Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
07/22/2008US7402452 Gate oxide film structure for a solid state image pick-up device
07/15/2008US7400663 Orientated group IV-VI semiconductor structure, and method for making and using the same
07/10/2008US20080164504 Phase change memory device and method for fabricating the same
07/10/2008US20080164455 Programmable Non-Volatile Resistance Switching Device
07/10/2008US20080164453 Uniform critical dimension size pore for pcram application
07/08/2008US7397061 Lateral phase change memory
07/03/2008US20080158942 Memory having storage locations within a common volume of phase change material
07/03/2008US20080157055 Resistive random access memory device
07/03/2008US20080157053 Resistor Random Access Memory Cell Device
07/01/2008US7394090 Non-volatile memory and the fabrication method
07/01/2008US7394089 Heat-shielded low power PCM-based reprogrammable EFUSE device
06/2008
06/26/2008US20080153197 Gate oxide film structure for a solid state image pick-up device
06/26/2008US20080149912 Semiconductor memory device and programming method thereof
06/26/2008US20080149910 Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory
06/26/2008US20080149907 Complementary Resistive Memory Structure
06/19/2008US20080145702 Phase change layers having different crystal lattices in single layer, methods of forming the same, phase change memory devices and methods of manufacturing the same
06/19/2008US20080142777 Phase change memory device including resistant material and method of fabricating the same
06/19/2008US20080142773 Phase change memory cell and method of formation
06/17/2008US7387909 Methods of forming assemblies displaying differential negative resistance
06/12/2008US20080135825 Phase-change memory device and method of fabricating the same
06/12/2008US20080135824 Method and Structure of a Multi-Level Cell Resistance Random Access Memory with Metal Oxides
06/10/2008US7385219 Optimized solid electrolyte for programmable metallization cell devices and structures
06/10/2008US7385218 Phase changeable layers including protruding portions in electrodes thereof and methods of forming same
06/05/2008US20080128674 Differential negative resistance memory
06/03/2008US7382662 Twin insulator charge storage device operation and its fabrication method
06/03/2008US7381982 Method for fabricating chalcogenide-applied memory
06/03/2008US7381981 Phase-change TaN resistor based triple-state/multi-state read only memory
05/2008
05/29/2008US20080121862 Bottom electrode geometry for phase change memory
05/27/2008US7378678 Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
05/22/2008WO2008060646A2 Semiconductor device having carbon nanotube interconnects and method of fabrication
05/22/2008US20080119007 Method of making a nonvolatile phase change memory cell having a reduced contact area
05/22/2008US20080116444 Initializing phase change memories
05/22/2008US20080116443 Phase change memory device with hole for a lower electrode defined in a stable manner and method for manufacturing the same
05/22/2008US20080116441 Nonvolatile phase change memory cell having a reduced contact area
05/22/2008US20080116440 Resistance Random Access Memory Structure for Enhanced Retention
05/22/2008US20080116438 Resistive random access memory having a solid solution layer and method of manufacturing the same
05/22/2008US20080116437 Phase Change Memory Device and Method of Forming the Same
05/20/2008US7375372 Thin film transistor
05/20/2008US7375365 Multilevel phase-change memory, manufacture method and operating method thereof
05/15/2008US20080111121 Phase change memory device and method of fabricating the same
05/15/2008US20080111120 Non-Volatile Memory Devices Having Cell Diodes and Methods of Fabricating the Same
05/13/2008US7372065 Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same
05/08/2008US20080105870 Two-terminal switching devices and their methods of fabrication
05/08/2008US20080105861 Multi-value recording phase-change memory device, multi-value recording phase-change channel transistor, and memory cell array
05/01/2008US20080099753 Phase change memory devices having dual lower electrodes and methods of fabricating the same
04/2008
04/29/2008US7365354 Programmable resistance memory element and method for making same
04/24/2008US20080093592 Phase-change memory and method of manufacturing the same
04/24/2008US20080093591 Storage nodes, phase change memory devices, and methods of manufacturing the same
04/23/2008CN100383954C Storage element and array, method for making contact structure and produced device and element
04/22/2008US7361925 Integrated circuit having a memory including a low-k dielectric material for thermal isolation
04/22/2008US7361924 Non-volatile memory element and production method thereof and storage memory arrangement
04/17/2008US20080089120 Resistive memory devices having a CMOS compatible electrolyte layer and methods of operating the same
04/17/2008US20080089104 Semiconductor memory device and method for fabricating semiconductor memory device
04/15/2008US7359250 Twin insulator charge storage device operation and its fabrication method
04/15/2008US7358521 Lateral phase change memory and method therefor
04/15/2008US7358520 Semiconductor memory cell, method for fabricating it and semiconductor memory device
04/10/2008WO2007139793A3 Multi-functional chalcogenide electronic devices having gain
04/10/2008US20080083916 Nonvolatile Memory Device and Fabrication Method Thereof
04/03/2008US20080078985 Electrochemical memory with internal boundary
04/03/2008US20080078983 Layer structures comprising chalcogenide materials
04/02/2008CN100378955C Lens structures suitable for use in image sensors and method for making the same
04/01/2008US7351992 Forming nonvolatile phase change memory cell having a reduced thermal contact area
04/01/2008US7351991 Methods for forming phase-change memory devices
03/2008
03/27/2008US20080073637 Phase-Change Material Layer and Phase-Change Memory Device Including the Phase-Change Material Layer
03/25/2008US7348589 Low power consumption magnetic memory and magnetic information recording device
03/19/2008EP1573829B1 Gunn diode
03/18/2008US7345295 Semiconductor memory
03/13/2008US20080061283 Memory cell array with low resistance common source and high current drivability
03/13/2008US20080061282 Semiconductor device and method of producing the same
03/12/2008EP1614166A4 Fluidic nanotubes and devices
03/06/2008US20080054243 Switching elements and production methods thereof
03/05/2008EP1665404A4 Multiple bit chalcogenide storage device
03/04/2008US7339213 Semiconductor device having a triple gate transistor and method for manufacturing the same
03/04/2008US7339185 Phase change memory device and method for forming the same
02/2008
02/28/2008US20080048293 Semiconductor device having heating structure and method of forming the same
02/28/2008US20080048171 Small electrode for phase change memories
02/28/2008US20080048170 Semiconductor memory device and fabrication method thereof
02/28/2008US20080048169 Heat-shielded low power pcm-based reprogrammable efuse device
02/28/2008US20080048166 Semiconductor integrated circuit device
02/27/2008CN100371686C Photodetector for optical encoder
02/26/2008US7335907 Memory device
02/21/2008US20080042119 Multi-layered chalcogenide and related devices having enhanced operational characteristics
02/21/2008US20080042118 Phase-change memory device with minimized reduction in thermal efficiency and method of manufacturing the same
02/14/2008US20080035906 Germanium compound, semiconductor device fabricated using the same, and methods of forming the same
02/12/2008US7329894 Semiconductor laser device and semiconductor optical modulator
02/07/2008US20080029753 Configurable circuits using phase change switches
02/07/2008US20080029481 Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
02/05/2008US7326953 Layer sequence for Gunn diode
01/2008
01/31/2008US20080023686 Storage nodes, phase change memories including a doped phase change layer, and methods of operating and fabricating the same
01/31/2008US20080023685 Memory device and method of making same
01/29/2008US7323708 Phase change memory devices having phase change area in porous dielectric layer
01/24/2008US20080017842 Phase change memory cell including nanocomposite insulator
01/24/2008US20080017841 Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices
01/23/2008CN100364111C Gunn diode, non-radiation medium wave guide gunn oscillator and its producing method and mounting structure thereof
01/22/2008US7321130 Thin film fuse phase change RAM and manufacturing method
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