Patents
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
06/2010
06/17/2010US20100148141 Non-volatile programmable device including phase change layer and fabricating method thereof
06/15/2010US7737428 Memory component with memory cells having changeable resistance and fabrication method therefor
06/10/2010US20100144141 Semiconductor Device and Method of Forming the Same
06/10/2010US20100140582 Chalcogenide nanoionic-based radio frequency switch
06/10/2010US20100140581 Bottom electrode for memory device and method of forming the same
06/10/2010US20100140578 Non volatile memory cells including a composite solid electrolyte layer
06/08/2010US7732800 Resistor random access memory cell with L-shaped electrode
06/08/2010US7732799 Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof
06/08/2010US7732798 Programmable via structure for three dimensional integration technology
06/03/2010US20100133497 Semiconductor device and method for manufacturing the same
06/03/2010US20100133496 Resistive random access memory
06/03/2010US20100133495 Phase change memory devices and methods for fabricating the same
06/01/2010US7728322 Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same
06/01/2010US7728320 Semiconductor memory device and phase change memory device
06/01/2010US7728319 Vertical phase change memory cell and methods for manufacturing thereof
05/2010
05/27/2010US20100129958 Method and apparatus for trench and via profile modification
05/25/2010US7723717 Semiconductor memory device and fabrication method thereof
05/25/2010US7723716 Phase change memory device
05/25/2010US7723715 Memory device and method of making same
05/25/2010US7723713 Layered resistance variable memory device and method of fabrication
05/25/2010US7723712 Reduced power consumption phase change memory and methods for forming the same
05/20/2010US20100123114 Nonvolatile memory device
05/18/2010US7719082 Memory device and storage apparatus
05/18/2010US7719071 Bipolar spin transistors and the applications of the same
05/18/2010US7718464 Integrated circuit fabricated using an oxidized polysilicon mask
05/13/2010US20100117054 Non-volatile memory device with data storage layer
05/13/2010US20100117053 Metal oxide materials and electrodes for re-ram
05/13/2010US20100117052 Programmable metallization cells and methods of forming the same
05/13/2010US20100117051 Memory cells including nanoporous layers containing conductive material
05/13/2010US20100117049 Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions
05/13/2010US20100117046 Phase change memory device having reduced programming current and method for manufacturing the same
05/13/2010US20100117045 Memory Array with a Selector Connected to Multiple Resistive Cells
05/13/2010US20100117044 Phase change memory device capable of satisfying reset current characteristic and contact resistance characteristic
05/13/2010US20100117043 Phase change memory device and method for manufacturing the same
05/13/2010US20100117041 Resistive memory device and method of fabricating the same
05/11/2010US7714313 Resistive RAM having at least one varistor and methods of operating the same
05/06/2010US20100110759 Programmable resistive memory cell with filament placement structure
05/06/2010US20100110758 Structures for resistive random access memory cells
05/06/2010US20100108982 Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
05/06/2010US20100108981 Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
05/06/2010US20100108978 Programmable resistive memory cell with sacrificial metal
05/06/2010US20100108976 Electronic devices including carbon-based films, and methods of forming such devices
05/06/2010US20100108973 Image sensor and method for manufacturing the same
05/06/2010US20100108972 Non-volatile semiconductor memory devices
05/06/2010US20100108971 Methods of Forming Integrated Circuit Devices Having Vertical Semiconductor Interconnects and Diodes Therein and Devices Formed Thereby
05/06/2010US20100108970 Memory Devices and Formation Methods
05/04/2010US7709822 Phase change memory and manufacturing method thereof
04/2010
04/29/2010US20100103716 Non-Volatile Memory with Metal-Polymer Bi-Layer
04/29/2010US20100102379 Lateral diffused metal oxide semiconductor device
04/29/2010US20100102363 Air gap spacer formation
04/29/2010US20100102290 Silicon based nanoscale crossbar memory
04/29/2010US20100102289 Nonvolatile resistive memory devices
04/27/2010US7705343 Phase change random access memory devices and methods of operating the same
04/27/2010US7705342 Porous semiconductor-based evaporator having porous and non-porous regions, the porous regions having through-holes
04/27/2010US7705340 Inflected magnetoresistive structures and memory cells having inflected magnetoresistive structures
04/22/2010US20100096695 High stress film
04/22/2010US20100096610 Phase-change material memory cell
04/22/2010US20100096609 Phase change memory device having a layered phase change layer composed of multiple phase change materials and method for manufacturing the same
04/20/2010US7700935 Non-volatile memory device and method of fabricating the same
04/15/2010US20100090289 Semiconductor devices having faceted silicide contacts, and related fabrication methods
04/15/2010US20100090270 Trench mosfet with short channel formed by pn double epitaxial layers
04/15/2010US20100090193 Nonvolatile memory element array and manufacturing method thereof
04/15/2010US20100090191 Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters
04/15/2010US20100090189 Nanoscale electrical device
04/15/2010US20100090187 Resistive memory device
04/13/2010US7696511 Memory element and memory device
04/13/2010US7696510 Integrated circuit including memory having reduced cross talk
04/13/2010US7696509 Solid state electrolyte memory device and method of fabricating the same
04/13/2010US7696507 Storage nodes, phase change memory devices, and methods of manufacturing the same
04/13/2010US7696506 Memory cell with memory material insulation and manufacturing method
04/08/2010US20100085798 Silicon-based nanoscale resistive device with adjustable resistance
04/08/2010US20100084627 Negative differential resistance polymer devices and circuits incorporating same
04/08/2010US20100084625 Memory Device
04/08/2010US20100084624 Dielectric mesh isolated phase change structure for phase change memory
04/06/2010US7692177 Resistance variable memory element and its method of formation
04/01/2010US20100081263 Methods of manufacturing semiconductor device
04/01/2010US20100080038 Semiconductor memory device
04/01/2010US20100078616 Nonvolatile memory device and manufacturing process thereof
03/2010
03/30/2010US7687881 Small electrode for phase change memories
03/30/2010US7687797 Three-terminal non-volatile memory element with hybrid gate dielectric
03/30/2010US7687796 Method and apparatus for forming an integrated circuit electrode having a reduced contact area
03/30/2010US7687793 Resistance variable memory cells
03/30/2010US7687377 Method of fabricating phase change memory device
03/25/2010US20100072450 Phase change memory device with heater electrodes having fine contact area and method for manufacturing the same
03/18/2010US20100065923 Iii-nitride device with back-gate and field plate and process for its manufacture
03/18/2010US20100065903 High-voltage vertical transistor with a varied width silicon pillar
03/18/2010US20100065808 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
03/16/2010US7679147 Semiconductor device fabricated by selective epitaxial growth method
03/16/2010US7679075 Phase change memory array and fabrication thereof
03/16/2010US7679074 Integrated circuit having multilayer electrode
03/11/2010US20100061145 Phase Change Memory Cell with MOSFET Driven Bipolar Access Device
03/11/2010US20100059833 Metal gate transistor and method for fabricating the same
03/11/2010US20100059730 Resistance change element and semiconductor device including the same
03/11/2010US20100059729 Apparatus and method for memory
03/09/2010US7675052 Nonvolatile memory device and fabrication method thereof
03/09/2010US7674709 Phase change memory cell with high read margin at low power operation
03/04/2010US20100052074 Metal gate transistor and method for fabricating the same
03/04/2010US20100051896 Variable resistance memory device using a channel-shaped variable resistance pattern
03/04/2010US20100051895 Phase change material, a phase change random access memory device including the phase change material, a semiconductor structure including the phase change material, and methods of forming the phase change material
03/04/2010US20100051893 Plasma treating methods of fabricating phase change memory devices, and memory devices so fabricated
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