Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062) |
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06/17/2010 | US20100148141 Non-volatile programmable device including phase change layer and fabricating method thereof |
06/15/2010 | US7737428 Memory component with memory cells having changeable resistance and fabrication method therefor |
06/10/2010 | US20100144141 Semiconductor Device and Method of Forming the Same |
06/10/2010 | US20100140582 Chalcogenide nanoionic-based radio frequency switch |
06/10/2010 | US20100140581 Bottom electrode for memory device and method of forming the same |
06/10/2010 | US20100140578 Non volatile memory cells including a composite solid electrolyte layer |
06/08/2010 | US7732800 Resistor random access memory cell with L-shaped electrode |
06/08/2010 | US7732799 Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof |
06/08/2010 | US7732798 Programmable via structure for three dimensional integration technology |
06/03/2010 | US20100133497 Semiconductor device and method for manufacturing the same |
06/03/2010 | US20100133496 Resistive random access memory |
06/03/2010 | US20100133495 Phase change memory devices and methods for fabricating the same |
06/01/2010 | US7728322 Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same |
06/01/2010 | US7728320 Semiconductor memory device and phase change memory device |
06/01/2010 | US7728319 Vertical phase change memory cell and methods for manufacturing thereof |
05/27/2010 | US20100129958 Method and apparatus for trench and via profile modification |
05/25/2010 | US7723717 Semiconductor memory device and fabrication method thereof |
05/25/2010 | US7723716 Phase change memory device |
05/25/2010 | US7723715 Memory device and method of making same |
05/25/2010 | US7723713 Layered resistance variable memory device and method of fabrication |
05/25/2010 | US7723712 Reduced power consumption phase change memory and methods for forming the same |
05/20/2010 | US20100123114 Nonvolatile memory device |
05/18/2010 | US7719082 Memory device and storage apparatus |
05/18/2010 | US7719071 Bipolar spin transistors and the applications of the same |
05/18/2010 | US7718464 Integrated circuit fabricated using an oxidized polysilicon mask |
05/13/2010 | US20100117054 Non-volatile memory device with data storage layer |
05/13/2010 | US20100117053 Metal oxide materials and electrodes for re-ram |
05/13/2010 | US20100117052 Programmable metallization cells and methods of forming the same |
05/13/2010 | US20100117051 Memory cells including nanoporous layers containing conductive material |
05/13/2010 | US20100117049 Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions |
05/13/2010 | US20100117046 Phase change memory device having reduced programming current and method for manufacturing the same |
05/13/2010 | US20100117045 Memory Array with a Selector Connected to Multiple Resistive Cells |
05/13/2010 | US20100117044 Phase change memory device capable of satisfying reset current characteristic and contact resistance characteristic |
05/13/2010 | US20100117043 Phase change memory device and method for manufacturing the same |
05/13/2010 | US20100117041 Resistive memory device and method of fabricating the same |
05/11/2010 | US7714313 Resistive RAM having at least one varistor and methods of operating the same |
05/06/2010 | US20100110759 Programmable resistive memory cell with filament placement structure |
05/06/2010 | US20100110758 Structures for resistive random access memory cells |
05/06/2010 | US20100108982 Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same |
05/06/2010 | US20100108981 Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same |
05/06/2010 | US20100108978 Programmable resistive memory cell with sacrificial metal |
05/06/2010 | US20100108976 Electronic devices including carbon-based films, and methods of forming such devices |
05/06/2010 | US20100108973 Image sensor and method for manufacturing the same |
05/06/2010 | US20100108972 Non-volatile semiconductor memory devices |
05/06/2010 | US20100108971 Methods of Forming Integrated Circuit Devices Having Vertical Semiconductor Interconnects and Diodes Therein and Devices Formed Thereby |
05/06/2010 | US20100108970 Memory Devices and Formation Methods |
05/04/2010 | US7709822 Phase change memory and manufacturing method thereof |
04/29/2010 | US20100103716 Non-Volatile Memory with Metal-Polymer Bi-Layer |
04/29/2010 | US20100102379 Lateral diffused metal oxide semiconductor device |
04/29/2010 | US20100102363 Air gap spacer formation |
04/29/2010 | US20100102290 Silicon based nanoscale crossbar memory |
04/29/2010 | US20100102289 Nonvolatile resistive memory devices |
04/27/2010 | US7705343 Phase change random access memory devices and methods of operating the same |
04/27/2010 | US7705342 Porous semiconductor-based evaporator having porous and non-porous regions, the porous regions having through-holes |
04/27/2010 | US7705340 Inflected magnetoresistive structures and memory cells having inflected magnetoresistive structures |
04/22/2010 | US20100096695 High stress film |
04/22/2010 | US20100096610 Phase-change material memory cell |
04/22/2010 | US20100096609 Phase change memory device having a layered phase change layer composed of multiple phase change materials and method for manufacturing the same |
04/20/2010 | US7700935 Non-volatile memory device and method of fabricating the same |
04/15/2010 | US20100090289 Semiconductor devices having faceted silicide contacts, and related fabrication methods |
04/15/2010 | US20100090270 Trench mosfet with short channel formed by pn double epitaxial layers |
04/15/2010 | US20100090193 Nonvolatile memory element array and manufacturing method thereof |
04/15/2010 | US20100090191 Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters |
04/15/2010 | US20100090189 Nanoscale electrical device |
04/15/2010 | US20100090187 Resistive memory device |
04/13/2010 | US7696511 Memory element and memory device |
04/13/2010 | US7696510 Integrated circuit including memory having reduced cross talk |
04/13/2010 | US7696509 Solid state electrolyte memory device and method of fabricating the same |
04/13/2010 | US7696507 Storage nodes, phase change memory devices, and methods of manufacturing the same |
04/13/2010 | US7696506 Memory cell with memory material insulation and manufacturing method |
04/08/2010 | US20100085798 Silicon-based nanoscale resistive device with adjustable resistance |
04/08/2010 | US20100084627 Negative differential resistance polymer devices and circuits incorporating same |
04/08/2010 | US20100084625 Memory Device |
04/08/2010 | US20100084624 Dielectric mesh isolated phase change structure for phase change memory |
04/06/2010 | US7692177 Resistance variable memory element and its method of formation |
04/01/2010 | US20100081263 Methods of manufacturing semiconductor device |
04/01/2010 | US20100080038 Semiconductor memory device |
04/01/2010 | US20100078616 Nonvolatile memory device and manufacturing process thereof |
03/30/2010 | US7687881 Small electrode for phase change memories |
03/30/2010 | US7687797 Three-terminal non-volatile memory element with hybrid gate dielectric |
03/30/2010 | US7687796 Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
03/30/2010 | US7687793 Resistance variable memory cells |
03/30/2010 | US7687377 Method of fabricating phase change memory device |
03/25/2010 | US20100072450 Phase change memory device with heater electrodes having fine contact area and method for manufacturing the same |
03/18/2010 | US20100065923 Iii-nitride device with back-gate and field plate and process for its manufacture |
03/18/2010 | US20100065903 High-voltage vertical transistor with a varied width silicon pillar |
03/18/2010 | US20100065808 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing |
03/16/2010 | US7679147 Semiconductor device fabricated by selective epitaxial growth method |
03/16/2010 | US7679075 Phase change memory array and fabrication thereof |
03/16/2010 | US7679074 Integrated circuit having multilayer electrode |
03/11/2010 | US20100061145 Phase Change Memory Cell with MOSFET Driven Bipolar Access Device |
03/11/2010 | US20100059833 Metal gate transistor and method for fabricating the same |
03/11/2010 | US20100059730 Resistance change element and semiconductor device including the same |
03/11/2010 | US20100059729 Apparatus and method for memory |
03/09/2010 | US7675052 Nonvolatile memory device and fabrication method thereof |
03/09/2010 | US7674709 Phase change memory cell with high read margin at low power operation |
03/04/2010 | US20100052074 Metal gate transistor and method for fabricating the same |
03/04/2010 | US20100051896 Variable resistance memory device using a channel-shaped variable resistance pattern |
03/04/2010 | US20100051895 Phase change material, a phase change random access memory device including the phase change material, a semiconductor structure including the phase change material, and methods of forming the phase change material |
03/04/2010 | US20100051893 Plasma treating methods of fabricating phase change memory devices, and memory devices so fabricated |