Patents
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
01/2008
01/10/2008US20080007995 Memory cell having a switching active material, and corresponding memory device
01/10/2008US20080006814 MSM binary switch memory
01/10/2008US20080006811 Integrated circuit havng a memory cell
01/10/2008US20080006810 Memory structure and method of manufacture
01/08/2008US7317201 Method of producing a microelectronic electrode structure, and microelectronic electrode structure
01/08/2008US7317200 SnSe-based limited reprogrammable cell
01/03/2008US20080001137 Optimized solid electrolyte for programmable metallization cell devices and structures
01/03/2008US20080001136 Electrically Writeable and Erasable Memory Medium
12/2007
12/27/2007US20070295985 Gallium nitride material devices and methods of forming the same
12/27/2007US20070295950 Variable resistance random access memory device and a method of fabricating the same
12/27/2007US20070295949 Phase change memory device and fabrication method thereof
12/27/2007US20070295948 Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement
12/20/2007US20070290186 Non-volatile variable resistance memory device and method of fabricating the same
12/11/2007US7307270 Memory element and memory device
12/11/2007US7307268 Structure and method for biasing phase change memory array for reliable writing
12/06/2007WO2007079174A3 The fabricating method of single electron transistor (set) by employing nano-lithographical technology in the semiconductor process
12/06/2007US20070278469 Component containing a baw filter
11/2007
11/29/2007US20070272913 Forming nonvolatile phase change memory cell having a reduced thermal contact area
11/29/2007US20070272912 Conductive paste and method of manufacturing electronic component using the same
11/27/2007US7301142 Optical encoder photodetector array with multiple resolutions
11/22/2007US20070267622 Multi-functional chalcogenide electronic devices having gain
11/22/2007US20070267621 Resistive memory device
11/22/2007US20070267620 Memory cell including doped phase change material
11/21/2007CN100350564C Semiconductor chip with asymmetric edge contour and manufacturing method thereof
11/08/2007WO2007125346A1 Semiconductor device for generating an oscillating voltage
11/07/2007CN200972869Y Sensing component with low consumption or digital signal transmission property
11/06/2007US7291857 Non-volatile memory
11/01/2007WO2007021451A3 Chalcogenide devices incorporating chalcogenide materials having reduced germanium or telluruim content
11/01/2007US20070252128 Switching device and methods for controlling electron tunneling therein
11/01/2007US20070252126 Driver and Drive Method for Organic Bistable Electrical Device and Organic Led Display
10/2007
10/30/2007US7288782 Use of Ta-capped metal line to improve formation of memory element films
10/30/2007US7288781 Programmable structure, an array including the structure, and methods of forming the same
10/25/2007WO2007120466A2 Methods of reducing the bandgap energy of a metal oxide
10/25/2007US20070249099 Method of and Apparatus for Manufacturing Elements
10/18/2007US20070242504 Shunted phase change memory
10/16/2007US7282731 Quantum supermemory
10/16/2007US7282730 Forming a carbon layer between phase change layers of a phase change memory
10/11/2007US20070235713 Semiconductor device having carbon nanotube interconnects and method of fabrication
10/11/2007US20070235712 Resistance variable memory cells
10/11/2007US20070235711 Methods of reducing the bandgap energy of a metal oxide
10/11/2007US20070235710 Nonvolatile Memory
10/11/2007US20070235709 Memory element with improved contacts
10/04/2007US20070230238 Phase change memory fabricated using self-aligned processing
10/04/2007US20070230237 Phase change memory fabricated using self-aligned processing
10/04/2007US20070228353 Electronic crossbar system for accessing arrays of nanobatteries for mass memory storage and system power
10/02/2007US7276722 Non-volatile memory structure
09/2007
09/27/2007US20070221906 Phase-Changeable Memory Devices Including Nitrogen and/or Silicon Dopants
09/27/2007US20070221613 Structure for stopping mechanical cracks in a substrate wafer, use of the structure and a method for producing the structure
09/25/2007US7274034 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
09/25/2007US7273809 Method of fabricating a conductive path in a semiconductor device
09/20/2007US20070215853 Multi-layer phase-changeable memory devices and methods of fabricating the same
09/18/2007US7271403 Isolating phase change memory devices
09/13/2007US20070210348 Phase-change memory device and methods of fabricating the same
09/13/2007US20070210297 Electrical structure with a solid state electrolyte layer, memory with a memory cell and method for fabricating the electrical structure
09/06/2007US20070205406 Phase Change Memory Device and Method of Manufacture Thereof
09/04/2007US7265373 Phase change memory device and method of manufacturing
08/2007
08/30/2007US20070201255 Chalcogenide glass constant current device, and its method of fabrication and operation
08/30/2007US20070200108 Storage node, phase change random access memory and methods of fabricating the same
08/21/2007US7259387 Nonvolatile semiconductor memory device
08/21/2007US7259040 Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array manufactured thereby
08/21/2007US7258931 Configured to reduce the volume of thin film residues on a top surface adjacent an edge, and to inhibit redeposition of residue particulates on the top surfaces during processing
08/21/2007US7258838 Solid state molecular probe device
08/16/2007US20070187664 Phase change memory cell with high read margin at low power operation
08/16/2007US20070187663 Damascene phase change memory
08/14/2007US7256415 Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
08/09/2007US20070181867 Phase change memory materials, devices and methods
08/07/2007US7253430 Controllable ovonic phase-change semiconductor memory device
08/07/2007US7253429 Electrically programmable memory element
08/02/2007US20070175863 Single Wafer Etching Apparatus and Single Wafer Etching Method
07/2007
07/24/2007US7247876 Three dimensional programmable device and method for fabricating the same
07/19/2007US20070164266 Semiconductor device and method of manufacturing the same
07/19/2007US20070164264 Storage system using an array of electro-magnetic sensors
07/17/2007US7244956 Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured
07/12/2007US20070158633 Method for Forming Self-Aligned Thermal Isolation Cell for a Variable Resistance Memory Array
07/12/2007US20070158632 Method for Fabricating a Pillar-Shaped Phase Change Memory Element
07/12/2007US20070158631 Phase change current density control structure
07/05/2007US20070152205 Semiconductor memory device, phase change memory device, and method of fabricating the same
07/04/2007CN1993842A Multi-terminal chalcogenide switching devices
06/2007
06/28/2007US20070145345 Non-volatile switching element, method for manufacturing the same, and integrated circuit having non-volatile switching elements
06/26/2007US7236066 Film bulk acoustic resonator and filter circuit including a plurality of film bulk acoustic resonators
06/21/2007WO2007070218A2 Chalcogenide devices and materials having reduced germanium or telluruim content
06/21/2007US20070138458 Damascene Phase Change RAM and Manufacturing Method
06/19/2007US7233028 Gallium nitride material devices and methods of forming the same
06/19/2007US7233017 Multibit phase change memory device and method of driving the same
06/05/2007US7227221 Multiple bit chalcogenide storage device
06/05/2007US7227170 Multiple bit chalcogenide storage device
06/05/2007US7227169 Programmable surface control devices and method of making same
05/2007
05/31/2007US20070120107 Phase-change memory device and method of manufacturing same
05/31/2007US20070120103 Switch circuit and method of switching radio frequency signals
05/29/2007US7223992 Thermal conducting trench in a semiconductor structure
05/24/2007US20070114533 Thin film transistor including a lightly doped amorphous silicon channel layer
05/24/2007US20070114509 Memory cell comprising nickel-cobalt oxide switching element
05/24/2007US20070114508 Reversible resistivity-switching metal oxide or nitride layer with added metal
05/22/2007US7220983 Self-aligned small contact phase-change memory method and device
05/22/2007US7220982 Amorphous carbon-based non-volatile memory
05/17/2007US20070108433 Semiconductor memory device and method of fabricating the same
05/17/2007US20070108432 Damascene phase change memory
05/17/2007US20070108431 I-shaped phase change memory cell
05/17/2007US20070108430 Thermally contained/insulated phase change memory device and method (combined)
05/15/2007US7217945 Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby
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