Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
12/2012
12/27/2012US20120327701 Memory array architecture with two-terminal memory cells
12/27/2012US20120326112 Phase-change random access memory device and method of manufacturing the same
12/25/2012US8338869 Sidewall coating for non-uniform spin momentum-transfer magnetic tunnel junction current flow
12/25/2012US8338817 Semiconductor device and method of manufacturing the same
12/25/2012US8338816 Nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory element
12/25/2012US8338815 Memory units and related semiconductor devices including nanowires
12/25/2012US8338813 Bit-erasing architecture for seek-scan probe (SSP) memory storage
12/20/2012US20120322224 Method of fabricating semiconductor device
12/20/2012US20120319077 Nonvolatile semiconductor memory device
12/20/2012US20120319072 Method for manufacturing non-volatile memory device, non-volatile memory element, and non-volatile memory device
12/20/2012US20120319070 Resistive-switching nonvolatile memory elements
12/18/2012US8334526 Phase change memory device capable of reducing disturbance
12/13/2012US20120313069 Work function tailoring for nonvolatile memory applications
12/13/2012US20120313066 Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices
12/13/2012US20120313063 Nonvolatile memory device having an electrode interface coupling region
12/11/2012US8331131 Changing a memristor state
12/11/2012US8330139 Multi-level memory cell
12/11/2012US8330137 Pore phase change material cell fabricated from recessed pillar
12/11/2012US8330136 High concentration nitrogen-containing germanium telluride based memory devices and processes of making
12/11/2012US8330135 Germanium based metal-insulator transition thin film, metal-insulator transition device including the metal-insulator transition thin film, and method of fabricating the metal-insulator transition device
12/06/2012US20120309161 Processing Phase Change Material to Improve Programming Speed
12/06/2012US20120305885 Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same
12/06/2012US20120305883 Metal oxide resistive switching memory and method for manufacturing same
12/06/2012US20120305881 Nitrogen Doped Aluminum Oxide Resistive Random Access Memory
12/06/2012US20120305879 Switching device having a non-linear element
12/06/2012US20120305877 Non-volatile memory device having a resistance-changeable element and method of forming the same
12/04/2012US8324608 Nonvolatile storage element and manufacturing method thereof
12/04/2012US8324607 Mirrored-gate cell for non-volatile memory
12/04/2012US8324606 Resistance change type memory
12/04/2012US8324605 Dielectric mesh isolated phase change structure for phase change memory
11/2012
11/29/2012US20120300533 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
11/27/2012US8319291 Non-volatile memory device with data storage layer
11/22/2012US20120295398 Ion implant modification of resistive random access memory devices
11/22/2012US20120294076 Forming Sublithographic Heaters for Phase Change Memories
11/22/2012US20120294063 Memory element and memory device
11/22/2012US20120292588 Nonvolatile memory device
11/22/2012US20120292587 Nonvolatile memory device
11/22/2012US20120292585 Continuous plane of thin-film materials for a two-terminal cross-point memory
11/22/2012US20120292584 Resistive memory cell
11/15/2012US20120286233 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
11/15/2012US20120286232 Array operation using a schottky diode as a non-ohmic selection device
11/15/2012US20120286230 Confinement techniques for non-volatile resistive-switching memories
11/15/2012US20120286228 Phase-change random access memory device and method of manufacturing the same
11/15/2012US20120286227 Semiconductor memory device
11/13/2012US8310857 Method for manufacturing a resistive switching memory cell comprising a nickel oxide layer operable at low-power and memory cells obtained thereof
11/13/2012US8309946 Resistance variable element
11/08/2012US20120281466 Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using same
11/06/2012US8304755 Three-dimensional semiconductor structure
11/01/2012US20120273746 System and method for the relaxation of stress in phase memory devices
11/01/2012US20120273744 Non-volatile resistive sense memory with improved switching
11/01/2012US20120273741 Phase change memory devices and methods of manufacturing the same
10/2012
10/30/2012US8299571 Resistance-change memory cell array
10/30/2012US8299559 Re-configurable mixed-mode integrated circuit architecture
10/25/2012US20120267599 Resistive ram devices and methods
10/25/2012US20120267598 Semiconductor device and method for manufacturing the same
10/25/2012US20120267596 Non-volatile memory
10/23/2012US8294134 Phase change memory devices having a current increase unit
10/23/2012US8294133 Electronic element and electroconductivity control method
10/23/2012US8294132 Graphene memristor having modulated graphene interlayer conduction
10/17/2012CN102738392A Gunn diode, preparation method and millimeter wave oscillator thereof
10/16/2012US8288753 Programmable resistive memory cell with oxide layer
10/16/2012US8288750 Phase change memory device with air gap
10/16/2012US8288747 Optoelectronic memory devices
10/16/2012US8288197 Method for manufacturing a semiconductor device including a memory device comprising an insulator mixture region in a conductive layer
10/11/2012US20120256157 Semiconductor device
10/11/2012US20120256156 Memory device and method of manufacturing the same
10/11/2012US20120256152 Semiconductor device and method for manufacturing the same
10/09/2012US8283651 Phase change memory device having an improved word line resistance, and methods of making same
10/09/2012US8283648 Resistance variable memory cell
10/04/2012US20120248400 Integrated Circuit Semiconductor Devices Including Channel Trenches And Related Methods Of Manufacturing
10/04/2012US20120248397 Nonvolatile storage element and manufacturing method thereof
10/02/2012US8278642 Resistive random access memory device and method of same
10/02/2012US8278641 Fabricating current-confining structures in phase change memory switch cells
10/02/2012US8278639 High integration phase change memory device having reduced thickness phase change layer and fabrication method thereof
10/02/2012US8278638 Device for storing data with optical addressing
09/2012
09/27/2012US20120241716 Nonvolatile semiconductor memory device
09/27/2012US20120241715 Semiconductor memory
09/27/2012US20120241714 Non-Volatile Resistive Oxide Memory Cells And Methods Of Forming Non-Volatile Resistive Oxide Memory Cells
09/27/2012US20120241709 Variable resistance element using electrochemical reaction and manufacturing method thereof
09/27/2012US20120241708 Memory Cells, Memory Cell Arrays, Methods of Using and Methods of Making
09/25/2012US8274066 Surface treatment to improve resistive-switching characteristics
09/18/2012US8269208 Memory device
09/13/2012US20120230100 Programmable phase-change memory and method therefor
09/13/2012US20120228576 Storage device and method of manufacturing the same
09/11/2012US8264061 Phase change memory cell and devices containing same
09/11/2012US8263963 Phase change memory device
09/11/2012US8263962 Inverted variable resistance memory cell and method of making the same
09/11/2012US8263960 Phase change memory cell with filled sidewall memory element and method for fabricating the same
09/11/2012US8263958 Layered resistance variable memory device and method of fabrication
09/06/2012US20120223287 Diamond Type Quad-Resistor Cells of PRAM
09/06/2012US20120223285 Resistive memory cell fabrication methods and devices
09/04/2012US8258496 Semiconductor integrated circuit device having memory cells disposed at cross point of metal lines and method for fabricating the same
09/04/2012US8258494 Nonvolatile memory device and method for manufacturing same
08/2012
08/30/2012US20120218808 Memory element and memory device
08/30/2012US20120217465 Non-volatile programmable device including phase change layer and fabricating method thereof
08/23/2012WO2012112769A1 Invisible/transparent nonvolatile memory
08/23/2012US20120211720 Variable resistance memory devices and methods of manufacturing the same
08/16/2012US20120205611 Heterojunction oxide non-volatile memory device
08/14/2012US8242552 Storage element, method of manufacturing same, and semiconductor storage device
08/14/2012US8242034 Phase change memory devices and methods for fabricating the same
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