Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
12/2002
12/18/2002CN1385864A S-type negative resistance device and preparation method thereof
12/12/2002US20020185709 Gunn diode and method of manufacturing the same
11/2002
11/28/2002DE10204831A1 Verfahren zur Herstellung indiumhaltiger wässriger Lösungen, die verminderte Mengen an metallischen Verunreinigungen enthalten A process for the preparation of aqueous solutions indiumhaltiger which reduced amounts of metallic contaminants
11/27/2002CN1381402A Method for preparing aqueous solution container indium with low-content metal impurities
10/2002
10/24/2002US20020153521 Methods for producing indium-containing aqueous solutions containing reduced amounts of metal impurities
09/2002
09/19/2002US20020130312 Column-row addressable electric microswitch arrays and sensor matrices employing them
09/06/2002WO2002069410A2 Gallium nitride material devices including backside vias and methods of fabrication
08/2002
08/29/2002US20020117681 Gallium nitride material devices and methods including backside vias
08/27/2002US6441395 Column-row addressable electric microswitch arrays and sensor matrices employing them
07/2002
07/30/2002US6426511 Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assembly of the same
05/2002
05/29/2002EP1208603A1 Transistor for an electronically driven display
04/2002
04/18/2002WO2002031884A1 Nonplanar semiconductor devices having closed region of spatial charge
04/09/2002US6369663 NRD guide Gunn oscillator
03/2002
03/20/2002EP0938731A4 Memory element with energy control mechanism
02/2002
02/05/2002US6344658 Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assembly of the same
01/2002
01/31/2002US20020011605 Heterojunction bipolar transferred electron tetrode
01/31/2002US20020011604 Semiconductor device for milliwave band oscillation, fabricating method therefor and oscillator therewith
01/08/2002US6337266 Small electrode for chalcogenide memories
01/03/2002WO2002001652A1 Gunn diodes
01/03/2002WO2002001629A1 Semiconductor device and method of manufacturing
12/2001
12/06/2001US20010049189 Current density to control the crystalline state of the chalcogenide is contained within a small pore formed by by first creating a small opening in a dielectric material deposited onto a lower electrode; semiconductors
10/2001
10/09/2001US6300842 Arrangement for producing electrical oscillations
10/04/2001EP1139452A2 Heterojunction bipolar transferred electron tetrode
10/02/2001US6297523 Field effect transistors
05/2001
05/16/2001CN1295722A X-Y addressable electric microswitch arrays and sensor matrices employing them
04/2001
04/04/2001EP1087867A1 Memory element with memory material comprising phase-change material and dielectric material
03/2001
03/08/2001WO2001017029A1 Transistor for an electronically driven display
11/2000
11/15/2000EP1051762A1 X-y addressable electric microswitch arrays and sensor matrices employing them
08/2000
08/29/2000US6111265 Multiple-layer structure including cathode layer, anode layer, and an active region sandwiched between, at least one portion of said active region is an aluminum gallium arsenide layer
08/17/2000DE19906205A1 Einrichtung Equipment
07/2000
07/11/2000US6087674 Memory element with memory material comprising phase-change material and dielectric material
12/1999
12/29/1999EP0720779B1 A transferred electron effect device
11/1999
11/24/1999CN1236190A Gunn diode, non-radiation medium wave guide gunn oscillator and its producing method and mounting structure thereof
11/03/1999EP0954039A1 Gunn diode, NRD guide gunn oscillator and fabricating method
10/1999
10/28/1999WO1999054128A1 Memory element with memory material comprising phase-change material and dielectric material
10/28/1999CA2324927A1 Memory element with memory material comprising phase-change material and dielectric material
10/06/1999EP0947005A1 Composite memory material comprising a mixture of phase-change memory material and dielectric material
09/1999
09/01/1999EP0938731A1 Memory element with energy control mechanism
08/1999
08/05/1999WO1999039394A1 X-y addressable electric microswitch arrays and sensor matrices employing them
08/05/1999CA2319548A1 X-y addressable electric microswitch arrays and sensor matrices employing them
08/03/1999US5933365 Memory element with energy control mechanism
12/1998
12/23/1998WO1998058385A1 Memory element with energy control mechanism
10/1998
10/20/1998US5825046 Composite memory material comprising a mixture of phase-change memory material and dielectric material
10/07/1998EP0869353A2 Sensor for measuring physical and/or chemical quantities, and method for manufacturing a sensor
05/1998
05/07/1998WO1998019350A1 Composite memory material comprising a mixture of phase-change memory material and dielectric material
05/07/1998CA2269856A1 Composite memory material comprising a mixture of phase-change memory material and dielectric material
10/1997
10/07/1997US5675157 Transferred electron effect device
12/1996
12/19/1996WO1996002964A3 A transferred electron effect device
09/1996
09/03/1996US5552624 Multi-function electronic component, especially negative dynamic resistance element, and corresponding method of fabrication
07/1996
07/10/1996EP0720779A1 A transferred electron effect device
02/1996
02/01/1996WO1996002964A2 A transferred electron effect device
05/1995
05/23/1995US5418181 Method of fabricating diode using grid recess
04/1995
04/26/1995EP0386152B1 Millimeter wave imaging device
03/1995
03/22/1995EP0379521B1 Bulk avalanche semiconductor switch using field compression
05/1994
05/10/1994US5311034 Perpendicular; semiconductors
03/1994
03/15/1994US5294564 Forming a thin monocrystalline layer with modulation or doping along a direction parallel to the confinement layers
02/1994
02/02/1994EP0581625A1 Multifunctional electronic device, in particular element with a negative dynamic resistance and corresponding method of fabrication
12/1993
12/14/1993CA1325258C Millimeter wave imaging device
11/1993
11/02/1993US5258624 Transferred electron effect device
10/1993
10/26/1993US5256579 Varing doping profile between anode and cathode
10/05/1993US5250815 Hot electron injector Gunn device with anode heat sink
09/1992
09/08/1992US5145809 Etching; metallization of walls
01/1992
01/08/1992EP0314712B1 Two-terminal semiconductor diode arrangement
12/1991
12/27/1991EP0462655A2 A transferred electron effect device and a method of manufacturing such a device
12/19/1991DE4107848A1 VHF semiconductor device with silicon germanium superlattice layers - on alloy layer used as gunn element, suitable for prodn. by silicon technology
12/18/1991EP0386152A4 Millimeter wave imaging device
04/1991
04/17/1991EP0379521A4 Bulk avalanche semiconductor switch using field compression
02/1991
02/26/1991US4996505 Frequency triplicator for microwaves
12/1990
12/19/1990EP0403365A1 Gunn effect component comprising an electron injection device
12/18/1990US4978928 High frequency, frequency multiplier using parallel Gunn diodes
12/04/1990US4975661 Gunn triode device, frequency divider and oscillator using this Gunn device
10/1990
10/03/1990EP0390661A1 Process for the directed modulation of the composition or doping of semiconductors, notably for the manufacture of planar monolithic electronic components, use and corresponding products
09/1990
09/12/1990EP0386152A1 Millimeter wave imaging device.
08/1990
08/01/1990EP0379521A1 Bulk avalanche semiconductor switch using field compression.
03/1990
03/20/1990US4910523 Micrometer wave imaging device
01/1990
01/16/1990US4894689 Transferred electron device
11/1989
11/29/1989EP0343737A2 A transferred electron effect device
11/07/1989US4879581 Transferred electron device with periodic ballistic regions
10/1989
10/04/1989EP0335389A2 Frequency multiplier for microwaves
08/1989
08/09/1989EP0205565B1 A microwave transferred electron device
07/1989
07/25/1989US4851886 Binary superlattice tunneling device and method
05/1989
05/18/1989WO1989004496A1 Millimeter wave imaging device
03/1989
03/09/1989WO1989002159A1 Bulk avalanche semiconductor switch using field compression
03/08/1989EP0306370A1 Gunn triode device, frenquency divider and oscillator using this Gunn device
01/1989
01/31/1989US4801982 Electronic devices
01/24/1989US4800420 Two-terminal semiconductor diode arrangement
11/1988
11/17/1988WO1988009057A1 Two-terminal semiconductor diode arrangement
11/01/1988US4782222 Bulk avalanche semiconductor switch using partial light penetration and inducing field compression
08/1988
08/30/1988CA1241456A1 Microwave transferred electron device
01/1988
01/13/1988EP0252818A1 Electron transfer diode with periodic ballistic regions
06/1987
06/04/1987WO1987003424A1 Semiconductor devices
04/1987
04/28/1987US4661836 Fabricating integrated circuits
03/1987
03/10/1987US4649405 Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices
12/1986
12/30/1986EP0205565A1 A microwave transferred electron device.
12/02/1986USH170 Self aligned notch for InP planar transferred electron oscillator
07/1986
07/17/1986WO1986004185A1 A microwave transferred electron device
05/1986
05/27/1986US4591889 Superlattice geometry and devices
04/1986
04/22/1986CA1203638A1 Method of batch manufacture of microwave diodes with incorporated encapsulation and diodes obtained by said method
04/09/1986EP0177022A2 GaAs Single Crystal, method of producing the same, and semiconductor device utilizing the same
03/1986
03/04/1986CA1201537A1 Semiconductor structures and manufacturing methods
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