Patents
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
08/2011
08/02/2011US7989790 Resistance random access memory
07/2011
07/26/2011US7985963 Memory using variable tunnel barrier widths
07/26/2011US7985961 Resistive random access memory device
07/26/2011US7985960 Voltage excited piezoelectric resistance memory cell system
07/21/2011US20110175051 Resistive memory device and method for fabricating the same
07/14/2011US20110168967 Electronic element and electroconductivity control method
07/12/2011US7977674 Phase change memory device and method of fabricating the same
07/12/2011US7977669 Semiconductor memory device having a liquid-repellent layer
07/12/2011US7977662 Phase-changeable memory devices having reduced susceptibility to thermal interference
07/12/2011US7977203 Programmable via devices with air gap isolation
07/05/2011US7973302 Forming phase change memory cells
07/05/2011US7973301 Low power phase change memory cell with large read signal
06/2011
06/30/2011US20110155991 Resistive memory device and fabricating method thereof
06/30/2011US20110155984 Self-selecting pcm device not requiring a dedicated selector transistor
06/28/2011US7968862 Phase change memory elements using self-aligned phase change material layers
06/23/2011US20110148441 Quantum computing device and using method thereof
06/21/2011US7964862 Phase change memory devices and methods for manufacturing the same
06/16/2011US20110140064 Carbon/tunneling-barrier/carbon diode
06/14/2011US7960712 Switching element, switching element drive method and fabrication method, reconfigurable logic integrated circuit, and memory element
06/07/2011US7956358 I-shaped phase change memory cell with thermal isolation
06/07/2011US7956344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode
06/07/2011US7956343 Nonvolatile memory devices and method of manufacturing the same
05/2011
05/26/2011US20110121250 High integration phase change memory device having reduced thickness phase change layer and fabrication method thereof
05/25/2011CN102074652A Linear gradient doped GaAs planar gunn diode and manufacturing method thereof
05/25/2011CN102074651A Reinforced linear gradient doped GaAs planar Gunn diode and manufacturing method thereof
05/17/2011US7943922 Nitrogenated carbon electrode for chalcogenide device and method of making same
05/17/2011US7943921 Phase change current density control structure
05/17/2011US7943919 Integrated circuit with upstanding stylus
05/17/2011US7943917 Non-volatile memory cell and fabrication method thereof
05/12/2011US20110110148 Memory arrays and associated methods of manufacturing
05/12/2011US20110108794 Phase Changeable Memory Devices
05/10/2011US7939817 Integrated circuit including memory element with spatially stable material
05/05/2011US20110101298 Methods, structures and devices for increasing memory density
05/03/2011US7936593 Reducing drift in chalcogenide devices
05/03/2011US7935952 Non-volatile memory device having threshold switching resistor, memory array including the non-volatile memory device and methods of manufacturing the same
05/03/2011US7935951 Composite chalcogenide materials and devices
05/03/2011US7935950 Controllable ovonic phase-change semiconductor memory device and methods of programming the same
05/03/2011US7935564 Self-converging bottom electrode ring
04/2011
04/28/2011US20110095256 Memory Cells
04/19/2011US7928423 Phase change memory device having an inversely tapered bottom electrode
04/19/2011US7928419 Electrolytic device based on a solution-processed electrolyte
04/19/2011US7928012 Integrated circuit with upstanding stylus
04/14/2011US20110084248 Cross point memory array devices
04/12/2011US7923714 Phase change memory cell structures and methods for manufacturing the same
04/12/2011US7923713 High density chalcogenide memory cells
04/12/2011US7923711 Switching elements and production methods thereof
04/05/2011US7919768 Phase-change memory element
04/05/2011US7919767 Semiconductor memory device and fabrication method thereof
04/05/2011US7919766 Method for making self aligning pillar memory cell device
03/2011
03/31/2011US20110073826 Phase change memory device and fabrication method thereof
03/29/2011US7915602 Phase change memory device and fabrication method thereof
03/24/2011US20110070715 Manufacturing a phase change memory device having a ring heater
03/24/2011US20110070714 Reproducible resistnance variable insulating memory devices and methods for forming same
03/22/2011US7910913 Phase change memory devices
03/22/2011US7910911 Phase change memory with tapered heater
03/17/2011US20110062407 Information recording and reproducing device
03/15/2011US7906774 Phase change memory device
03/10/2011US20110057161 Thermally shielded resistive memory element for low programming current
03/08/2011US7902539 Semiconductor device and method of manufacturing the same
03/08/2011US7902538 Phase change memory cell with first and second transition temperature portions
03/08/2011US7902536 Memory device and method of making same
03/08/2011US7902535 Functional molecular element
03/03/2011US20110051494 Memory having tunnel barrier and method for writing and reading information to and from this memory
03/03/2011US20110049466 Large array of upward pointing p-i-n diodes having large and uniform current
03/03/2011US20110049455 Wafer bonded access device for multi-layer phase change memory using lock-and-key alignment
03/01/2011US7898042 Two-terminal switching devices and their methods of fabrication
03/01/2011US7897959 Phase change memory device having a word line contact
03/01/2011US7897958 Phase-change memory device, phase-change channel transistor, and memory cell array
03/01/2011US7897957 Non-volatile resistance switching memory
03/01/2011US7897955 Programmable resistive memory cell with filament placement structure
03/01/2011US7897954 Dielectric-sandwiched pillar memory device
03/01/2011US7897952 Phase-change memory cell with a patterned layer
03/01/2011US7897950 Magnetic memory, a method of manufacturing the same, and semiconductor integrated circuit apparatus
02/2011
02/24/2011US20110042640 Method of fabricating phase change memory cell
02/22/2011US7893421 Phase change memory device capable of satisfying reset current characteristic and contact resistance characteristic
02/22/2011US7893419 Processing phase change material to improve programming speed
02/17/2011US20110037042 Phase change memory device with plated phase change material
02/15/2011US7888668 Phase change memory
02/15/2011US7888667 Phase change memory device
02/08/2011US7884346 Nonvolatile memory element and manufacturing method thereof
02/08/2011US7883931 Methods of forming memory cells, and methods of forming programmed memory cells
02/03/2011US20110024712 PCM With Poly-Emitter BJT Access Devices
02/01/2011US7880158 Phase-change TaN resistor based triple-state/multi-state read only memory
02/01/2011US7879646 Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance
01/2011
01/27/2011US20110017970 Self-align planerized bottom electrode phase change memory and manufacturing method
01/20/2011US20110012083 Phase change memory cell structure
01/20/2011US20110012080 Arsenic-Containing Variable Resistance Materials
01/20/2011US20110012079 Thermal protect pcram structure and methods for making
01/18/2011US7872251 Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same
01/18/2011US7872250 Phase-change ram and method for fabricating the same
01/18/2011US7872249 Nonvolatile memory device and methods of operating and fabricating the same
01/13/2011US20110007544 Non-Volatile Memory with Active Ionic Interface Region
01/13/2011US20110007543 Bipolar select device for resistive sense memory
01/11/2011US7868314 Phase change memory device and fabricating method therefor
01/11/2011US7868312 Semiconductor memory device and manufacturing method thereof
01/04/2011US7863598 Nonvolatile memory device
01/04/2011US7863597 Resistance variable memory devices with passivating material
01/04/2011US7863596 Ring heater for a phase change memory device
01/04/2011US7863594 Switching device
12/2010
12/30/2010US20100327251 Phase change memory device having partially confined heating electrodes capable of reducing heating disturbances between adjacent memory cells
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