Patents
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
10/2009
10/15/2009US20090256128 Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same
10/08/2009US20090250680 Semiconductor integrated circuit device
10/08/2009US20090250679 Phase-change memory device and method of fabricating the same
10/08/2009US20090250678 Nonvolatile memory apparatus, nonvolatile memory element, and nonvolatile element array
10/06/2009US7598512 Thin film fuse phase change cell with thermal isolation layer and manufacturing method
10/01/2009US20090242866 Phase change memory device and method of fabricating the same
10/01/2009US20090242865 Memory array with diode driver and method for fabricating the same
09/2009
09/24/2009US20090237983 Integrated circuit including memory element doped with dielectric material
09/24/2009US20090236582 Phase-change ram and method for fabricating the same
09/24/2009US20090236581 Resistance memory element, method of manufacturing resistance memory element and semiconductor memory device
09/22/2009US7592617 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method
09/17/2009US20090231911 Phase change memory cell with constriction structure
09/17/2009US20090230377 Phase Change Materials for Applications that Require Fast Switching and High Endurance
09/17/2009US20090230376 Resistive memory devices
09/15/2009US7589381 Field effect transistor and manufacturing method thereof
09/15/2009US7589343 Memory and access device and method therefor
09/15/2009US7589342 Phase change memory device having carbon nano tube lower electrode material and method of manufacturing the same
09/11/2009WO2008095639A8 Gunn diode
09/10/2009US20090227092 Temperature and pressure control methods to fill features with programmable resistance and switching devices
09/10/2009US20090227066 Method of forming ring electrode
09/10/2009US20090224224 Nonvolatile memory element, nonvolatile memory apparatus, nonvolatile semiconductor apparatus, and method of manufacturing nonvolatile memory element
09/03/2009US20090219755 Integrated circuit including an electrode having an outer portion with greater resistivity
09/03/2009US20090218629 Etch stop layer of reduced thickness for patterning a dielectric material in a contact level of closely spaced transistors
09/03/2009US20090218558 Semiconductor device and method of forming the same
09/03/2009US20090218557 Phase change memory device and fabrication method thereof
09/03/2009DE102007007159B4 Gunn-Diode Gunn diode
09/01/2009US7582889 Electrically rewritable non-volatile memory element and method of manufacturing the same
09/01/2009US7582546 Device with damaged breakdown layer
08/2009
08/27/2009US20090212346 Semiconductor memory element
08/27/2009US20090212272 Self-converging bottom electrode ring
08/25/2009US7579616 Four-terminal programmable via-containing structure and method of fabricating same
08/25/2009US7579612 Resistive memory device having enhanced resist ratio and method of manufacturing same
08/20/2009US20090206319 Semiconductor device for generating an oscillating voltage
08/20/2009US20090206318 Nonvolatile memory device and method of manufacturing the same
08/13/2009US20090200536 Method for manufacturing an electric device with a layer of conductive material contracted by nanowire
08/13/2009US20090200534 Method for fabrication of polycrystalline diodes for resistive memories
08/13/2009US20090200533 Resistive Memory Element and Method of Fabrication
08/06/2009US20090196096 Memory Cells, Methods Of Forming Memory Cells, And Methods Of Forming Programmed Memory Cells
08/06/2009US20090194757 Phase change element extension embedded in an electrode
08/06/2009US20090194756 Self-aligned eletrode phase change memory
08/06/2009US20090194755 High density chalcogenide memory cells
08/06/2009DE102005018344B4 Herstellungsverfahren für rekonfigurierbare Verbindung Production method of compound reconfigurable
08/04/2009US7569846 Phase-change memory device including nanowires and method of manufacturing the same
08/04/2009US7569845 Phase-change memory and fabrication method thereof
07/2009
07/30/2009US20090189137 Non-volatile memory device and method of manufacturing the same
07/29/2009CN100521279C Multi-terminal chalcogenide switching devices
07/23/2009US20090184310 Memory cell with memory element contacting an inverted t-shaped bottom electrode
07/23/2009US20090184305 Resistive memory devices and methods of manufacturing the same
07/16/2009US20090180314 Multi-level programmable pcram memory
07/16/2009US20090179186 Phase change memory cells delineated by regions of modified film resistivity
07/16/2009US20090179185 Phase change material layers and phase change memory devices including the same
07/16/2009US20090179184 Vertical spacer electrodes for variable-resistance material memories and vertical spacer variable-resistance material memory cells
07/15/2009CN100514695C Programmable structure of micro-electronics
07/14/2009US7560722 Optimized solid electrolyte for programmable metallization cell devices and structures
07/14/2009US7560721 Phase change material with filament electrode
07/09/2009US20090174428 Programmable element, and memory device or logic circuit
07/09/2009US20090173929 Data memory, writable and readable by microtips, which has a well structure, and manufacturing method
07/08/2009CN100511750C Fabricating method of gunn diode and gunn oscillator
07/02/2009US20090168493 Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell
07/02/2009US20090166763 Semiconductor device and method for fabricating the same
07/02/2009US20090166724 Semiconductor Device and Method for Manufacturing the Same
07/02/2009US20090166602 Phase-change memory device capable of improving contact resistance and reset current and method of manufacturing the same
06/2009
06/25/2009US20090161420 Field-emitter-based memory array with phase-change storage devices
06/25/2009US20090160010 Semiconductor device and method for manufacturing the device
06/25/2009US20090159989 Semiconductor Device and Method of Fabricating the Same
06/25/2009US20090159868 Phase change material layer and phase change memory device including the same
06/23/2009US7550756 Semiconductor memory
06/18/2009US20090152649 Semiconductor Device of Multi-Finger Type
06/18/2009US20090152616 Semiconductor Device and Method for Manufacturing the Same
06/16/2009US7547906 Multi-functional chalcogenide electronic devices having gain
06/16/2009US7547905 Programmable conductor memory cell structure and method therefor
06/11/2009US20090146130 Nitrogenated Carbon Electrode for Chalcogenide Device and Method of Making Same
06/11/2009US20090146127 Phase change memory
06/11/2009US20090146126 Probe-based memory
06/11/2009US20090146125 Resistive memory and method for manufacturing the same
06/04/2009US20090140234 Semiconductor device and method of manufacturing the same
06/02/2009US7541608 Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
05/2009
05/28/2009US20090134474 Constant Current Source Device and Method for Manufacturing The Same
05/26/2009US7538337 Nanowire semiconductor device
05/21/2009US20090127538 Phase-Changeable Memory Devices Having Reduced Susceptibility to Thermal Interference
05/21/2009US20090127537 Electric device with phase change resistor
05/21/2009US20090127535 Phase change memory element and method for fabricating the same
05/20/2009CN100490149C Integrated circuit device, method of manufacturing the same and method of forming vanadium oxide film
05/19/2009US7534713 High density chalcogenide memory cells
05/14/2009US20090121290 Semiconductor device with high-breakdown-voltage transistor
05/14/2009US20090121212 Small electrode for phase change memories
05/14/2009US20090121208 Nonvolatile semiconductor memory device and method of manufacturing the same
05/13/2009EP1592551A4 Nanofabric articles and methods of making the same
05/12/2009US7531825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array
05/07/2009US20090114990 High voltage semiconductor device and method for manufacturing the same
05/07/2009US20090114956 Semiconductor device and manufacturing method thereof
05/07/2009US20090114899 Resistance memory and method for manufacturing the same
05/07/2009US20090114896 Memory device using abrupt metal-insulator transition and method of operating the same
05/05/2009US7528402 Electrically rewritable non-volatile memory element
04/2009
04/30/2009US20090109730 Resistance memory element
04/30/2009US20090108379 Semiconductor device and fabrication method for the same
04/30/2009US20090108369 Radio Frequency Device of Semiconductor Type
04/30/2009US20090108367 Semiconductor device and method for manufacturing same
04/30/2009US20090108354 Semiconductor device and method of manufacturing the same
04/30/2009US20090108247 Memory Device
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