Patents
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
06/2005
06/28/2005US6912146 Using an MOS select gate for a phase change memory
06/16/2005US20050127350 Field emission phase change diode memory
06/16/2005US20050127348 Integrated circuit with upstanding stylus
06/15/2005CN1627546A Field emission phase change diode memory
06/15/2005CN1206752C Arrays having electric microswitch and its drive method
06/09/2005WO2005027134A3 Multiple bit chalcogenide storage device
06/09/2005US20050124152 Composite sacrificial material
05/2005
05/31/2005US6900098 Twin insulator charge storage device operation and its fabrication method
03/2005
03/24/2005WO2005027134A2 Multiple bit chalcogenide storage device
03/24/2005WO2004084273A3 Re-configurable mixed-mode integrated circuit architecture
03/24/2005US20050064671 Reduction of channel hot carrier effects in transistor devices
03/24/2005CA2538142A1 Multiple bit chalcogenide storage device
03/10/2005WO2005022639A2 Gallium nitride material devices and methods of forming the same
03/10/2005US20050051901 Memory device with discrete layers of phase change memory material
03/08/2005US6864111 Column-row addressable electric microswitch arrays and sensor matrices employing them
02/2005
02/24/2005US20050042862 Small electrode for chalcogenide memories
02/22/2005US6858528 Composite sacrificial material
02/10/2005US20050029541 Charge controlled avalanche photodiode and method of making the same
02/09/2005CN1576800A Photodetector for optical encoder
02/02/2005CN1574092A Phase random access memory with high density
01/2005
01/26/2005CN1186822C Organic thin film transistor and preparing method
01/25/2005US6847048 Organic thin film transistor (OTFT)
01/25/2005US6846470 Reducing impurities using ion exchange resin
01/20/2005US20050012086 Programmable resistance memory element and method for making same
01/20/2005DE102004030572A1 Fotordetektor für optischen Codierer Fotordetektor for optical encoder
01/13/2005WO2005004197A2 Fluidic nanotubes and devices
01/13/2005CA2522222A1 Fluidic nanotubes and devices
12/2004
12/30/2004US20040262498 Photodetector for optical encoder
12/09/2004US20040245554 Phase random access memory with high density
11/2004
11/25/2004US20040235204 Programmable structure, an array including the structure, and methods of forming the same
11/17/2004EP1476938A1 Device generating oscillations in the high-frequency range
11/17/2004EP0938731B1 Memory element with energy control mechanism
10/2004
10/27/2004EP1470572A2 Charge controlled avalanche photodiode and method of making the same
10/14/2004WO2004061990A3 Layered construction
09/2004
09/30/2004WO2004084273A2 Re-configurable mixed-mode integrated circuit architecture
09/28/2004US6798003 Reliable adhesion layer interface structure for polymer memory electrode and method of making same
09/28/2004US6797612 Method of fabricating a small electrode for chalcogenide memory cells
09/23/2004US20040183708 Re-configurable mixed-mode integrated circuit architecture
09/23/2004US20040183203 Composite sacrificial material
09/16/2004US20040178404 Multiple bit chalcogenide storage device
09/15/2004CN1529348A Gunn diode fabricating method and gunn oscillator
09/09/2004US20040175844 Sacrificial template method of fabricating a nanotube
09/08/2004CN1165917C S-type negative resistance device and preparation method thereof
08/2004
08/10/2004US6774387 Programmable resistance memory element
08/05/2004US20040152231 Reliable adhesion layer interface structure for polymer memory electrode and method of making same
07/2004
07/22/2004WO2004061990A2 Layered construction
07/15/2004DE10261238A1 Schichtenfolge Layer sequence
07/08/2004US20040130002 Gallium nitride material devices and methods of forming the same
07/01/2004WO2004055826A1 Using an mos select gate for a phase change memory
07/01/2004WO2003079463A3 Programmable structure, an array including the structure, and methods of forming the same
06/2004
06/17/2004US20040113134 Using an mos select gate for a phase change memory
06/15/2004US6750473 Transistor design for use in the construction of an electronically driven display
05/2004
05/19/2004CN1497680A Semiconductor chip with asymmetric edge contour and manufacturing method thereof
05/13/2004US20040089859 Integrated circuit device installed structure and installation method
05/06/2004US20040087145 Semiconductor device and method of manufacturing
04/2004
04/29/2004US20040081898 Mask can be used independently of its height tolerances and of the membrane holder to be mounted thereon for a distortion-free lithographic imaging
04/28/2004EP1412990A1 Gunn effect semiconductor component such as a hetero-bipolar transistor (hbt) for generating frequency-variable oscillations
04/15/2004DE10240085A1 Process for structuring a masking layer for semiconductor production uses ideal and correcting mask patterns to allow for lateral distortion
04/06/2004US6717480 Multielement oscillator employing higher mode planar resonator
03/2004
03/25/2004US20040056246 Organic thin film transistor (OTFT) and manufacturing process thereof
03/18/2004DE10337757A1 Semiconductor wafer, has asymmetric edge profile extending between inner and outer edge profiles with arc that defines inner profile at point of intersection with top surface of wafer
03/16/2004US6707060 Column-row addressable electric microswitch arrays and sensor matrices employing them
03/04/2004US20040042248 Magnetic memory cell having an annular data layer and a soft reference layer
03/04/2004US20040041143 Semiconductor wafers having asymmetric edge profiles that facilitate high yield processing by inhibiting particulate contamination and methods of forming same
02/2004
02/12/2004US20040026718 Solid-state image pick-up device and method of manufacturing the same
02/11/2004EP1388931A2 NRD guide Gunn oscillator
02/11/2004EP1388902A2 Fabricating method of Gunn diode
02/11/2004EP1388901A2 Structure for assembly of a Gunn diode
02/03/2004US6686647 Doped layers of n-type indium phosphide; semiconductors
01/2004
01/29/2004US20040016923 Column-row addressable electric microswitch arrays and sensor matrices employing them
01/15/2004US20040007749 Assemblies displaying differential negative resistance
01/07/2004EP1378012A2 Gallium nitride material devices including backside vias and methods of fabrication
12/2003
12/24/2003CN1463030A Method for manufacturing silicon transistor with high back voltage and low negative resistance
11/2003
11/13/2003US20030209971 Programmable structure, an array including the structure, and methods of forming the same
11/06/2003WO2003065417A3 Charge controlled avalanche photodiode and method of making the same
10/2003
10/21/2003US6635951 Small electrode for chalcogenide memories
10/16/2003WO2003067633A3 Programmable resistance memory element and method for making same
10/01/2003CN1445859A Mounting structure and method of integrated circuit device
09/2003
09/25/2003WO2003079463A2 Programmable structure, an array including the structure, and methods of forming the same
09/18/2003US20030176059 Small electrode for chalcogenide memories
08/2003
08/26/2003US6611002 Smaller; vertically conducting even when nonconducting layer is included
08/14/2003WO2003067750A1 Device generating oscillations in the high-frequency range
08/14/2003WO2003067633A2 Programmable resistance memory element and method for making same
08/07/2003WO2003065417A2 Charge controlled avalanche photodiode and method of making the same
08/07/2003CA2473223A1 Charge controlled avalanche photodiode and method of making the same
07/2003
07/31/2003US20030141500 Transistor design for use in the construction of an electronically driven display
07/03/2003US20030122156 Programmable resistance memory element and method for making same
05/2003
05/20/2003US6566694 Heterojunction bipolar transferred electron tetrode
04/2003
04/24/2003US20030076185 Multielement oscillator employing higher mode planar resonator
04/09/2003CN1409417A Organic film transistor and preparing method
04/08/2003US6545291 Transistor design for use in the construction of an electronically driven display
04/02/2003EP1297570A1 Semiconductor device and method of manufacturing
04/01/2003US6541749 Photodetector pixel cell
03/2003
03/11/2003US6531391 Method of fabricating a conductive path in a semiconductor device
03/06/2003WO2003019692A1 Gunn effect semiconductor component such as a hetero-bipolar transistor (hbt) for generating frequency-variable oscillations
03/06/2003WO2002069410A3 Gallium nitride material devices including backside vias and methods of fabrication
02/2003
02/11/2003US6518588 Magnetic random access memory with thermally stable magnetic tunnel junction cells
02/04/2003US6514832 Gunn diode, NRD guide Gunn oscillator, fabricating method of Gunn diode and structure for assembly of the same
01/2003
01/23/2003US20030017623 Reliable adhesion layer interface structure for polymer memory electrode and method of making same
12/2002
12/26/2002US20020195621 Programmable resistance memory element and method for making same
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