Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
08/2012
08/14/2012US8241947 Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using same
08/09/2012US20120199806 Polysilicon emitter bjt access device for pcram
08/09/2012US20120199805 Nonvolatile memory device and manufacturing method thereof
08/07/2012US8237149 Non-volatile memory device having bottom electrode
08/07/2012US8237148 4F2 self align side wall active phase change memory
08/07/2012US8237147 Switching element and manufacturing method thereof
08/07/2012US8237146 Memory cell with silicon-containing carbon switching layer and methods for forming the same
08/02/2012US20120193600 Variable resistance nonvolatile memory element, method of manufacturing the same, and variable resistance nonvolatile memory device
08/02/2012US20120193596 Semiconductor device and manufacturing method thereof
07/2012
07/31/2012US8233317 Phase change memory device suitable for high temperature operation
07/26/2012US20120187377 Graphene-based device and methods of forming the same
07/26/2012US20120187363 Arrays Of Nonvolatile Memory Cells And Methods Of Forming Arrays Of Nonvolatile Memory Cells
07/26/2012US20120187361 Non-Volatile Memory Arrays Comprising Rail Stacks With A Shared Diode Component Portion For Diodes Of Electrically Isolated Pillars
07/26/2012US20120187360 Semiconductor memory devices and methods of fabricating the same
07/24/2012US8227787 Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
07/24/2012US8227786 Nonvolatile memory element
07/24/2012US8227785 Chalcogenide containing semiconductors with chalcogenide gradient
07/24/2012US8227782 Resistance change element and method of manufacturing the same
07/19/2012US20120181500 Non-volatile semiconductor memory device and manufacturing method thereof
07/17/2012US8222628 Phase change memory device having a bottleneck constriction and method of manufacturing the same
07/12/2012US20120175582 Phase-change random access memory device and method of manufacturing the same
07/12/2012US20120175581 Switching device and semiconductor memory device including the same
07/05/2012US20120171837 Semiconductor Memory Devices And Methods Of Fabricating The Same
07/05/2012US20120168828 Semiconductor device having a triple gate transistor and method for manufacturing the same
07/05/2012US20120168827 Semiconductor device having a triple gate transistor and method for manufacturing the same
07/05/2012US20120168707 Carbon nano-film reversible resistance-switchable elements and methods of forming the same
07/03/2012US8212327 High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme
07/03/2012US8212232 Resistance changing device and method for fabricating the same
07/03/2012US8212231 Resistive memory device with an air gap
06/2012
06/28/2012US20120161095 Semiconductor memory device and method of manufacturing the same
06/28/2012US20120161093 Via-Configurable High-Performance Logic Block Architecture
06/27/2012CN102522502A Terahertz GaN Gunn diode based on SiC substrate and manufacturing method thereof
06/26/2012US8207519 Ionic-modulated dopant profile control in nanoscale switching devices
06/21/2012US20120153249 Composition of Memory Cell With Resistance-Switching Layers
06/14/2012US20120147656 Memory element and memory device
06/14/2012US20120145985 Variable Resistance Memory Devices And Methods Of Fabricating The Same
06/12/2012US8198620 Resistance switching memory
06/12/2012US8198619 Phase change memory cell structure
06/12/2012US8198160 Vertical transistor phase change memory
06/07/2012US20120142143 Methods for Forming Resistive Switching Memory Elements by Heating Deposited Layers
06/05/2012US8193594 Two-terminal switching devices and their methods of fabrication
05/2012
05/31/2012US20120132882 Transparent Memory for Transparent Electronic Device
05/31/2012US20120132881 Cross-point memory with self-defined memory elements
05/24/2012US20120126194 Thermally insulated phase change material memory cells
05/23/2012EP1476938B1 Device generating oscillations in the high-frequency range
05/22/2012US8183553 Resistive switching memory element including doped silicon electrode
05/17/2012US20120119181 Semiconductor device including buffer electrode, method of fabricating the same, and memory system including the same
05/17/2012US20120119180 Non-volatile memory device and method of fabricating the same
05/17/2012US20120119179 Memory device and method for manufacturing the same
05/15/2012US8179712 Non-volatile memory with metal-polymer bi-layer
05/15/2012US8178861 Semiconductor device
05/10/2012US20120112154 In via formed phase change memory cell with recessed pillar heater
05/08/2012US8173989 Resistive random access memory device and methods of manufacturing and operating the same
05/08/2012US8173988 Reduced power consumption phase change memory and methods for forming the same
05/03/2012US20120104353 Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters
05/03/2012US20120104350 Variable resistance nonvolatile memory device and method of manufacturing the same
05/03/2012US20120104348 Programmable metallization memory cells via selective channel forming
05/03/2012US20120104341 Memory cell device and method of manufacture
04/2012
04/26/2012US20120098566 Interconnection Architectures for Multilayer Crossbar Circuits
04/26/2012US20120097916 Semiconductor device and method for manufacturing same
04/26/2012US20120097915 Nonvolatile memory device and manufacturing method thereof
04/26/2012US20120097911 Phase change memory cell structures and methods
04/24/2012US8164949 Reducing drift in chalcogenide devices
04/24/2012US8164081 Memory devices and formation methods
04/24/2012US8164079 Phase change memory
04/19/2012US20120091428 Manufacturing method of memory apparatus, memory device and memory apparatus
04/19/2012US20120091425 Nonvolatile memory device and manufacturing method thereof
04/19/2012US20120091423 Nonvolatile memory device and manufacturing method thereof
04/19/2012US20120091416 Phase Change Material for a Phase Change Memory Device and Method for Adjusting the Resistivity of the Material
04/19/2012US20120091414 Semiconductor device and method for manufacturing the same
04/17/2012US8159856 Bipolar select device for resistive sense memory
04/17/2012US8159006 Semiconductor device having a triple gate transistor and method for manufacturing the same
04/17/2012US8158967 Integrated memory arrays
04/17/2012US8158965 Heating center PCRAM structure and methods for making
04/17/2012US8158963 Programmable resistive RAM and manufacturing method
04/11/2012CN102414855A 如用于质量感测的单块fbar-cmos结构 Monolith fbar-cmos structure such as for quality sensing
04/10/2012US8154002 Nanoscale wire-based data storage
04/05/2012US20120080657 Low operational current phase change memory structures
04/03/2012US8148710 Phase-change memory device using a variable resistance structure
04/03/2012US8148709 Magnetic device with integrated magneto-resistive stack
03/2012
03/29/2012US20120077309 Thermally stabilized electrode structure
03/29/2012US20120075925 PCRAM With Current Flowing Laterally Relative to Axis Defined By Electrodes
03/29/2012US20120074376 Nonvolatile memory elements with metal deficient resistive switching metal oxides
03/29/2012US20120074368 Semiconductor memory device and manufacturing method thereof
03/27/2012US8143610 Semiconductor phase-change memory device
03/27/2012US8143609 Three-terminal cascade switch for controlling static power consumption in integrated circuits
03/22/2012US20120069632 Current control, memory element, memory device, and production method for current control element
03/22/2012US20120068148 Nonvolatile memory element and fabrication method for nonvolatile memory element
03/22/2012US20120068147 Phase change memory device and fabrication thereof
03/22/2012US20120068146 Memory element and memory device
03/20/2012US8138490 Variable resistance non-volatile memory cells and methods of fabricating same
03/20/2012US8138489 Non-volatile semiconductor storage device and method of manufacturing the same
03/13/2012US8134860 Shunted phase change memory
03/07/2012EP2425468A1 Monolithic fbar-cmos structure such as for mass sensing
03/06/2012US8130537 Phase change memory cell with MOSFET driven bipolar access device
03/06/2012US8129707 Semiconductor integrated circuit device
03/06/2012US8129706 Structures and methods of a bistable resistive random access memory
03/06/2012US8129704 Non-volatile resistive-switching memories
03/01/2012US20120049149 Silicon based nanostructure crossbar memory
02/2012
02/28/2012US8124956 Phase change memory devices
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