H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof

Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
02/2012
02/28/2012	US8124953 Sensor device having a porous structure element
02/28/2012	US8124952 Programmable resistive memory cell with filament placement structure
02/28/2012	US8124951 Phase change memory device with alternating adjacent conduction contacts and fabrication method thereof
02/23/2012	US20120043521 Conductive Metal Oxide Structures In Non Volatile Re Writable Memory Devices
02/23/2012	US20120043520 Disturb-resistant non-volatile memory device and method
02/23/2012	US20120043518 Variable resistance memory element and fabrication methods
02/23/2012	US20120043517 Nonvolatile semiconductor storage device
02/21/2012	US8120007 Phase-change memory device, phase-change channel transistor and memory cell array
02/21/2012	US8120006 Non-volatile memory device
02/21/2012	US8119503 Methods of forming integrated circuit devices having vertical semiconductor interconnects and diodes therein and devices formed thereby
02/16/2012	US20120040508 Method of Forming Semiconductor Device Having Self-Aligned Plug
02/16/2012	US20120037878 Encapsulated phase change cell structures and methods
02/14/2012	US8115189 Silica nanowire comprising silicon nanodots and method of preparing the same
02/14/2012	US8115186 Phase change memory cell with reduced switchable volume
02/14/2012	US8114468 Methods of forming a non-volatile resistive oxide memory array
02/09/2012	US20120032135 Phase-Change Memory Units and Phase-Change Memory Devices Using the Same
02/07/2012	US8110822 Thermal protect PCRAM structure and methods for making
01/2012
01/31/2012	US8106376 Method for manufacturing a resistor random access memory with a self-aligned air gap insulator
01/24/2012	US8101938 Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method
01/24/2012	US8101937 Multistate nonvolatile memory elements
01/24/2012	US8101936 SnSe-based limited reprogrammable cell
01/19/2012	US20120014165 Optimized solid electrolyte for programmable metallization cell devices and structures
01/19/2012	US20120012808 Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
01/17/2012	US8097921 Semiconductor device with high-breakdown-voltage transistor
01/17/2012	US8097874 Programmable resistive memory cell with sacrificial metal
01/17/2012	US8097871 Low operational current phase change memory structures
01/17/2012	US8097870 Memory cell with alignment structure
01/11/2012	EP2115793B1 Gunn diode
01/10/2012	US8093577 Three-dimensional phase-change memory array
01/10/2012	US8093576 Chemical-mechanical polish termination layer to build electrical device isolation
01/05/2012	US20120001148 Stress-engineered resistance-change memory device
12/2011
12/29/2011	US20110315947 Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
12/29/2011	US20110315946 Nonvolatile memory device
12/29/2011	US20110315945 Method of manufacturing semiconductor memory device
12/22/2011	US20110312150 Phase change memory devices and methods for fabricating the same
12/22/2011	US20110309320 Method for active pinch off of an ovonic unified memory element
12/20/2011	US8080817 Memory cells
12/13/2011	US8077504 Shallow trench type quadri-cell of phase-change random access memory (PRAM)
12/13/2011	US8076664 Phase change memory with layered insulator
12/13/2011	US8076663 Phase change memory structures
12/13/2011	US8076662 Electric field induced phase transitions and dynamic tuning of the properties of oxide structures
12/08/2011	US20110297911 Semiconductor device and method for manufacturing the same
12/06/2011	US8071970 Phase change memory device and fabrication method thereof
12/06/2011	US8071423 Variable resistance memory devices and methods of forming variable resistance memory devices
12/01/2011	US20110291066 Nonvolatile Memory Devices Having Cells with Oxygen Diffusion Barrier Layers Therein and Methods of Manufacturing the Same
11/2011
11/29/2011	US8067762 Resistance random access memory structure for enhanced retention
11/24/2011	US20110284815 Phase-change memory devices having stress relief buffers
11/22/2011	US8063395 Memristor amorphous metal alloy electrodes
11/22/2011	US8062923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method
11/15/2011	US8058636 Variable resistance nonvolatile memory apparatus
11/08/2011	US8053753 Thin film logic circuitry
11/08/2011	US8053749 Mirrored-gate cell for non-volatile memory
11/08/2011	US8053252 Mitigation of edge degradation in ferroelectric memory devices through plasma etch clean
11/03/2011	US20110269267 Ald processing techniques for forming non-volatile resistive-switching memories
11/01/2011	US8049202 Phase change memory device having phase change material layer containing phase change nano particles
11/01/2011	US8049201 Semiconductor memory device and method of manufacturing the same
11/01/2011	US8049200 Bottom electrode for memory device and method of forming the same
11/01/2011	US8049199 Phase change memory device and method for manufacturing the same
11/01/2011	US8049198 Phase change memory device to prevent thermal cross-talk and method for manufacturing the same
11/01/2011	US8048684 Structure and method for manipulating spin quantum state through dipole polarization switching
10/2011
10/27/2011	US20110260131 Nonvolatile semiconductor memory device
10/18/2011	US8039829 Contact structure, a semiconductor device employing the same, and methods of manufacturing the same
10/18/2011	US8039828 Semiconductor device and method of fabricating the same
10/18/2011	US8039780 Photodiode array and image pickup device using the same
10/13/2011	US20110248236 Semiconductor device and method for fabricating the same
10/11/2011	US8035097 Phase change memory
10/06/2011	US20110240950 Phase-change random access memory device and method of manufacturing the same
10/06/2011	US20110240947 Defective Graphene-Based Memristor
10/06/2011	US20110240946 Graphene Memristor Having Modulated Graphene Interlayer Conduction
10/04/2011	US8030634 Memory array with diode driver and method for fabricating the same
09/2011
09/29/2011	US20110235408 Semiconductor memory device
09/29/2011	US20110233511 Nonvolatile memory element and manufacturing method thereof
09/29/2011	US20110233510 Nonvolatile memory element
09/27/2011	US8026543 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
09/27/2011	US8026505 Memory device
09/27/2011	US8026504 Semiconductor device and method of forming the same
09/22/2011	US20110227026 Non-volatile storage with metal oxide switching element and methods for fabricating the same
09/22/2011	US20110227019 Non-volatile memory device and manufacturing method thereof
09/20/2011	US8022502 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element
09/20/2011	US8022385 Memory devices with buried lines
09/20/2011	US8022384 Optimized solid electrolyte for programmable metallization cell devices and structures
09/20/2011	US8022383 Two-terminal resistance switching element with silicon, and semiconductor device
09/20/2011	US8022382 Phase change memory devices with reduced programming current
09/15/2011	US20110220861 Nonvolatile semiconductor memory device and manufacturing method thereof
09/13/2011	US8017930 Pillar phase change memory cell
09/06/2011	US8013318 Phase change random access memory for actively removing residual heat and method of manufacturing the same
09/01/2011	US20110210304 Storage device
09/01/2011	US20110210303 Nonvolatile semiconductor memory device
09/01/2011	US20110210302 Semiconductor device
08/2011
08/30/2011	US8008645 Memory cell array with low resistance common source and high current drivability
08/30/2011	US8008644 Phase-change memory cell having two insulated regions
08/30/2011	US8008643 Phase change memory cell with heater and method for fabricating the same
08/30/2011	US8008114 Phase change memory device and manufacturing method
08/23/2011	US8003972 Bottom electrode geometry for phase change memory
08/18/2011	US20110198557 Method for fabrication of crystalline diodes for resistive memories
08/18/2011	US20110198556 Nonvolatile semiconductor memory device and method of manufacturing the same
08/16/2011	US7999316 Semiconductor device and method for manufacturing the same
08/09/2011	US7994493 Phase change memory devices employing cell diodes and methods of fabricating the same
08/04/2011	US20110186797 Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same
08/02/2011	US7989796 Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement

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