Patents
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
07/2006
07/06/2006US20060145135 Phase-change multi-level cell and operating method thereof
07/06/2006US20060145133 Recovery of computer systems
07/04/2006US7071485 Semiconductor integrated circuit device
06/2006
06/29/2006US20060138392 Mild methods for generating patterned silicon surfaces
06/27/2006US7068068 Re-configurable mixed-mode integrated circuit architecture
06/27/2006US7067837 Phase-change memory devices
06/22/2006US20060131553 Silicon semiconductor substrate and its manufacturing method
06/21/2006EP0947005A4 Composite memory material comprising a mixture of phase-change memory material and dielectric material
06/15/2006US20060124915 Production of an optoelectronic component that is enclosed in plastic, and corresponding methods
06/13/2006US7061005 Phase-change random access memory device and method for manufacturing the same
06/13/2006US7061004 Resistance variable memory elements and methods of formation
06/08/2006US20060118774 Multiple bit chalcogenide storage device
06/07/2006EP1665404A2 Multiple bit chalcogenide storage device
06/06/2006US7057923 Field emission phase change diode memory
06/06/2006US7057202 Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof
06/06/2006US7057201 Integrated semiconductor memory
05/2006
05/25/2006US20060112466 Nanostructure, electronic device and method of manufacturing the same
05/23/2006US7049624 Member and member manufacturing method
05/23/2006US7049623 Vertical elevated pore phase change memory
05/18/2006WO2006033673A3 Apparatus and method for transverse characterization of materials
05/16/2006US7046556 Twin insulator charge storage device operation and its fabrication method
05/11/2006US20060099816 System and method for plasma induced modification and improvement of critical dimension uniformity
05/11/2006US20060097239 Multilevel phase-change memory, manufacture method and operating method thereof
05/11/2006US20060097238 Non-volatile memory element and production method thereof and storage memory arrangement
05/09/2006US7042001 Phase change memory devices including memory elements having variable cross-sectional areas
05/02/2006US7038231 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation
05/02/2006US7038230 Horizontal chalcogenide element defined by a pad for use in solid-state memories
05/02/2006US7038229 Electric switching device and electric circuit device having the same
04/2006
04/13/2006WO2005093790A3 Method of, and apparatus for manufacturing semiconductor elements
04/13/2006US20060076547 Three-dimensional viewing and editing of microcircuit design
04/06/2006DE102004044558A1 Gunn-Diode Gunn diode
04/04/2006US7023009 Electrically programmable memory element with improved contacts
04/04/2006US7023008 Resistive memory element
03/2006
03/30/2006WO2006033673A2 Apparatus and method for transverse characterization of materials
03/28/2006US7018920 Composite sacrificial material
03/28/2006US7018911 Methods for fabrication for phase-changeable memory devices having phase-changeable material regions with lateral contacts
03/23/2006WO2006029607A1 Gunn-diode
03/23/2006US20060060832 Memory component with memory cells having changeable resistance and fabrication method therefor
03/21/2006US7015504 Sidewall formation for high density polymer memory element array
03/21/2006US7015494 Assemblies displaying differential negative resistance
03/16/2006US20060054928 Layered construction
03/14/2006US7012273 Phase change memory device employing thermal-electrical contacts with narrowing electrical current paths
03/09/2006US20060049391 Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
03/09/2006US20060049390 Resistively switching nonvolatile memory cell based on alkali metal ion drift
02/2006
02/28/2006US7005666 Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby
02/28/2006US7005665 Phase change memory cell on silicon-on insulator substrate
02/28/2006US7005215 Mask repair using multiple exposures
02/22/2006CN1243371C Method for manufacturing silicon transistor with high back voltage and low negative resistance
02/16/2006US20060033094 Resistance variable memory with temperature tolerant materials
02/15/2006CN1734745A Lens structures suitable for use in image sensors and method for making the same
02/07/2006US6995388 Phase changeable memory devices and methods of forming the same in which an upper electrode includes a tip that extends toward a lower electrode
01/2006
01/19/2006WO2005022639A3 Gallium nitride material devices and methods of forming the same
01/19/2006US20060011902 Phase change memory device and method for forming the same
01/12/2006US20060006373 Method for manufacturing pattern formed structure
01/11/2006EP1614166A2 Fluidic nanotubes and devices
12/2005
12/29/2005US20050285096 Programmable structure, an array including the structure, and methods of forming the same
12/29/2005US20050285094 Phase-Changeable Memory Devices
12/28/2005CN1714403A Using a MOS select gate for a phase change memory
12/20/2005CA2269857C Memory element with energy control mechanism
12/15/2005US20050274968 Lens structures suitable for use in image sensors and method for making the same
12/08/2005US20050269566 Programmable structure, an array including the structure, and methods of forming the same
12/06/2005US6972428 Programmable resistance memory element
12/06/2005US6972427 Switching device for reconfigurable interconnect and method for making the same
12/01/2005DE102005018344A1 Schaltvorrichtung für rekonfigurierbare Zwischenverbindung und Verfahren zum Herstellen derselben Switching device for reconfigurable interconnect and method of making same
11/2005
11/24/2005US20050260785 Gate oxide film structure for a solid state image pick-up device
11/10/2005WO2005004197A3 Fluidic nanotubes and devices
11/10/2005US20050247927 Assemblies displaying differential negative resistance
11/10/2005US20050247925 Methods of forming assemblies displaying differential negative resistance
11/10/2005US20050247922 Phase random access memory with high density
11/09/2005EP1592551A2 Nanofabric articles and methods of making the same
11/03/2005US20050242339 Apparatus and method for transverse characterization of materials
11/03/2005US20050242337 Switching device for reconfigurable interconnect and method for making the same
10/2005
10/19/2005CN2735549Y 负电阻元件 Negative resistance element
10/06/2005WO2005093790A2 Method of, and apparatus for manufacturing semiconductor elements
10/06/2005US20050221573 Integrated circuit device, method of manufacturing the same and method of forming vanadium oxide film
10/06/2005US20050218394 Micro electronic component
10/05/2005CN1677670A Integrated circuit device, method of manufacturing the same and method of forming vanadium oxide film
10/05/2005CN1221474C Method for preparing aqueous solution containing indium with low-content metal impurities
09/2005
09/29/2005US20050215018 Reduction of channel hot carrier effects in transistor devices
09/22/2005US20050205964 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method
09/21/2005CN1670980A A chalcogenide memory cell having a horizontal electrode and method for forming same
09/20/2005US6946694 Gate oxide film structure for a solid state image pick-up device
09/15/2005US20050199869 Orientated group IV-VI semiconductor structure, and method for making and using the same
09/14/2005EP1573829A2 Layered construction
09/13/2005US6943395 Phase random access memory with high density
08/2005
08/25/2005WO2005076976A2 [110] oriented group iv-vi semiconductor structure, and method for making and using the same
08/25/2005US20050184283 Semiconductor device having a triple gate transistor and method for manufacturing the same
08/25/2005US20050184282 Phase change memory cell and method of its manufacture
08/11/2005US20050176188 Thin film transistor and manufacturing method thereof
08/11/2005US20050176187 Thin film transistor and manufacturing method thereof
08/09/2005US6927411 Programmable structure, an array including the structure, and methods of forming the same
08/09/2005US6927410 Memory device with discrete layers of phase change memory material
08/04/2005DE10240085B4 Verfahren zum Strukturieren einer Maskenschicht A method of patterning a mask layer
08/03/2005CN1650444A Programmable structure, an array including the structure, and methods of forming the same
08/02/2005US6924540 Integrated circuit device installed structure and installation method
08/02/2005US6924539 Magnetic memory cell having an annular data layer and a soft reference layer
07/2005
07/28/2005US20050164451 Twin insulator charge storage device operation and its fabrication method
07/21/2005US20050156679 Device for generating oscillations in the high-frequency range
07/07/2005US20050145928 Twin insulator charge storage device operation and its fabrication method
06/2005
06/29/2005CN1633699A Charge controlled avalanche photodiode and method of making the same
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