Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
01/2014
01/07/2014US8624214 Semiconductor device having a resistance variable element and a manufacturing method thereof
12/2013
12/31/2013US8618526 Nonvolatile memory device and manufacturing method thereof
12/31/2013US8618525 Work function tailoring for nonvolatile memory applications
12/31/2013US8618523 Semiconductor device
12/26/2013US20130343115 Resistance memory cell and operation method thereof
12/25/2013CN102522502B Terahertz GaN Gunn diode based on SiC substrate and manufacturing method thereof
12/24/2013US8614432 Crystalline silicon-based memristive device with multiple mobile dopant species
12/19/2013US20130334483 Methods of forming resistive memory elements and related resistive memory elements, resistive memory cells, and resistive memory devices
12/17/2013US8610309 Sensor for switching a pump on and/or off
12/17/2013US8610102 Nonvolatile memory device and manufacturing method thereof
12/17/2013US8610100 Apparatus comprising nanowires
12/10/2013US8604457 Phase-change memory element
12/03/2013US8598564 Nonvolatile semiconductor memory device and manufacturing method thereof
12/03/2013US8598562 Memory cell structures
12/03/2013US8598560 Resistive memory elements exhibiting increased interfacial adhesion strength, methods of forming the same, and related resistive memory cells and memory devices
12/03/2013US8598011 Resistive memory device and method for fabricating the same
11/2013
11/28/2013US20130314983 Drift-insensitive or invariant material for phase change memory
11/26/2013US8592797 Variable resistance memory device having reduced bottom contact area and method of forming the same
11/26/2013US8592796 Phase-change random access memory device and method of manufacturing the same
11/26/2013US8592794 Resistance random access memory element and method for making the same
11/26/2013US8592793 Electrode diffusions in two-terminal non-volatile memory devices
11/26/2013US8592792 Heterojunction device comprising a semiconductor oxide and a resistivity-switching oxide or nitride
11/26/2013US8592791 Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof
11/21/2013US20130306927 Atomic layer deposition of a metal chalcogenide material and related memory cells and methods of forming memory cells
11/19/2013US8586962 Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters
11/19/2013US8586959 Memristive switch device
11/19/2013US8586958 Switching element and manufacturing method thereof
11/19/2013US8586957 Three-terminal cascade switch for controlling static power consumption in integrated circuits
11/14/2013US20130299769 Line and space architecture for a non-volatile memory device
11/12/2013US8581424 Information recording/reproducing device
11/12/2013US8581225 Variable resistance nonvolatile memory device and method of manufacturing the same
11/12/2013US8581223 Memory device and method of making same
11/12/2013US8581222 Phase change memory device comprising bismuth-tellurium nanowires
11/05/2013US8575590 Nonvolatile semiconductor memory device
11/05/2013US8575587 Storage device and method of manufacturing the same
11/05/2013US8575585 Memristive device
10/2013
10/31/2013US20130286724 Method, system, and device for heating a phase change memory (pcm) cell
10/31/2013US20130285002 Phase Change Memory Cells And Methods Of Forming Phase Change Memory Cells
10/31/2013US20130285001 Methods for forming a nanowire and apparatus thereof
10/29/2013US8569733 Semiconductor memory device
10/29/2013US8569732 Memory element and memory device
10/29/2013US8569731 Nonvolatile memory device and method for manufacturing same
10/29/2013US8569730 Carbon-based interface layer for a memory device and methods of forming the same
10/24/2013US20130277639 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor
10/24/2013US20130277636 Variable resistance memory device and method for fabricating the same
10/22/2013US8563962 Memory device and method of manufacturing the same
10/22/2013US8563961 Semiconductor storage device and method for manufacturing same
10/22/2013US8563959 Resistive-switching memory element
10/17/2013US20130270501 Rram device with an embedded selector structure and methods of making same
10/15/2013US8558213 Vertical phase change memory cell
10/15/2013US8558211 Switching element and method for manufacturing switching element
10/15/2013US8558209 Memory cells having-multi-portion data storage region
10/15/2013US8557685 Memory cell that includes a carbon-based memory element and methods of forming the same
10/10/2013WO2013151675A1 Non-volatile resistance-switching thin film devices
10/08/2013US8551809 Reduction of forming voltage in semiconductor devices
10/03/2013WO2013148777A1 Memory devices and methods having adaptable read threshold levels
10/03/2013WO2013148723A1 Solid electrolyte memory elements with electrode interface for improved performance
10/03/2013WO2013148604A1 Dna computing
10/03/2013US20130256620 Semiconductor device and method of manufacturing thereof
10/01/2013US8547721 Resistive memory device
10/01/2013US8546784 Phase change current density control structure
10/01/2013US8546782 Memory element and memory device
09/2013
09/26/2013US20130248801 Semiconductor memory device with resistance change film and method of manufacturing the same
09/24/2013US8541765 Resistance variable memory cell structures and methods
09/19/2013US20130242637 Memelectronic Device
09/17/2013US8536561 Memory cells and memory cell arrays
09/17/2013US8536558 RRAM structure with improved memory margin
09/17/2013US8536556 Nonvolatile memory device and method for manufacturing nonvolatile memory device
09/12/2013WO2013134757A1 Memristive device and method of manufacture
09/10/2013US8530878 Memory arrays and methods of forming memory cells
09/10/2013US8530877 Non-volatile semiconductor device
09/10/2013US8529784 Electrically-conductive and semi-conductive films
09/05/2013US20130228733 Resistive memory device and fabrication method thereof
09/03/2013US8525146 Electrical circuit component
08/2013
08/29/2013US20130221317 Creating an embedded reram memory from a high-k metal gate transistor structure
08/27/2013US8519375 Non-volatile memory with oxygen vacancy barrier layer
08/22/2013WO2013123255A1 Bipolar multistate nonvolatile memory
08/22/2013US20130214237 Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element
08/20/2013US8513639 Resistive-switching memory and fabrication method thereof
08/20/2013US8513637 4F2 self align fin bottom electrodes FET drive phase change memory
08/15/2013WO2013119882A1 Transition metal oxide bilayers
08/15/2013WO2013119881A1 Multifunctional electrode
08/15/2013US20130207069 Metal-insulator transition switching devices
08/15/2013US20130207065 Bipolar multistate nonvolatile memory
08/13/2013US8507889 Nonvolatile semiconductor memory device comprising memory cell array having multilayer structure
08/08/2013US20130200322 Memory arrays and methods of forming the same
08/06/2013US8502322 Nonvolatile memory device and manufacturing method thereof
08/06/2013US8502187 Resistive switching memory element including doped silicon electrode
08/06/2013US8502186 Semiconductor memory device
08/06/2013US8502185 Switching device having a non-linear element
08/06/2013US8502182 Memory device having self-aligned cell structure
08/01/2013US20130194002 Re-configurable mixed-mode integrated circuit architecture
08/01/2013US20130193399 3d solid-state arrangement for solid state memory
08/01/2013US20130193398 Memory arrays and methods of forming same
08/01/2013US20130193394 Incorporation of oxygen into memory cells
07/2013
07/30/2013US8497492 Variable resistive element, and its manufacturing method
07/25/2013US20130187120 Memory cells having heaters with angled sidewalls
07/25/2013US20130187109 Charging Controlled RRAM Device, and Methods of Making Same
07/23/2013US8493772 Phase change memory structures and methods
07/23/2013US8492740 Memory element and memory device
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