Patents
Patents for H01L 47 - Bulk negative resistance effect devices, e.g. gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (2,062)
01/2009
01/01/2009US20090001348 Semiconductor device
01/01/2009US20090001346 Non-Volatile Polymer Bistability Memory Device
01/01/2009US20090001342 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
01/01/2009US20090001338 Seek-and-scan probe memory devices with nanostructures for improved bit size and resistance contrast when reading and writing to phase-change media
12/2008
12/31/2008WO2009002393A1 Multi-layered chalcogenide and related devices having enhanced operational characteristics
12/30/2008US7470924 Phase change RAM device with increased contact area between word line and active area
12/30/2008US7470923 Semiconductor integrated circuit device
12/30/2008US7470922 Increasing adherence of dielectrics to phase change materials
12/25/2008US20080315174 Variable resistance non-volatile memory cells and methods of fabricating same
12/25/2008US20080315173 Integrated circuit having multilayer electrode
12/25/2008US20080315172 Integrated circuit including vertical diode
12/25/2008US20080315171 Integrated circuit including vertical diode
12/18/2008US20080308783 Memory devices and methods of manufacturing the same
12/18/2008US20080308782 Semiconductor memory structures
12/16/2008US7465952 Programmable non-volatile resistance switching device
12/16/2008US7465951 Write-once nonvolatile phase change memory array
12/11/2008US20080303013 Integrated circuit including spacer defined electrode
12/10/2008EP0947005B1 Composite memory material comprising a mixture of phase-change memory material and dielectric material
12/10/2008CN100442388C Using a MOS select gate for a phase change memory
12/09/2008US7462921 Integrated circuit device, method of manufacturing the same and method of forming vanadium oxide film
12/04/2008US20080298113 Resistive memory architectures with multiple memory cells per access device
12/04/2008US20080296553 Integrated circuit having contact including material between sidewalls
12/04/2008US20080296552 Phase change memory cell structures and methods for manufacturing the same
12/04/2008US20080296550 Resistive random access memory device and methods of manufacturing and operating the same
12/02/2008US7459717 Phase change memory cell and manufacturing method
11/2008
11/27/2008US20080290335 Phase change memory device and method for fabricating the same
11/25/2008US7456421 Vertical side wall active pin structures in a phase change memory and manufacturing methods
11/25/2008US7456420 Electrode for phase change memory device and method
11/20/2008US20080283817 PHASE-CHANGE NONVOLATILE MEMORY DEVICE USING Sb-Zn ALLOY AND MANUFACTURING METHOD THEREOF
11/20/2008US20080283816 Semiconductor memory device and method of manufacturing the same
11/20/2008US20080283815 Variable resistance memory device having reduced bottom contact area and method of forming the same
11/20/2008US20080283814 Phase-change memory element
11/20/2008US20080283813 Semiconductor memory device and method of manufacturing the same
11/13/2008US20080280390 Method of fabricating semiconductor memory device having self-aligned electrode, related device and electronic system having the same
11/13/2008US20080277643 Phase change memory device using pnp-bjt for preventing change in phase change layer composition and widening bit line sensing margin
11/13/2008US20080277641 Inverted variable resistance memory cell and method of making the same
11/11/2008US7449711 Phase-change-type semiconductor memory device
11/06/2008US20080273378 Multi-level resistive memory cell using different crystallization speeds
11/06/2008US20080272360 Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same
11/06/2008US20080272359 Phase changeable memory cells
11/06/2008US20080272358 Phase change memory devices and methods for fabricating the same
11/06/2008US20080272357 Phase Changeable Memory Device Structures
11/06/2008US20080272356 Fabrication of phase change memory element with phase-change electrodes using conformal deposition
11/06/2008US20080272355 Phase change memory device and method for forming the same
10/2008
10/30/2008US20080268565 Thermally insulated phase change memory manufacturing method
10/30/2008US20080265237 Phase-Change Memory Cell Having Two Insulated Regions
10/30/2008US20080265235 Nonvolatile semiconductor memory device and manufacturing method thereof
10/28/2008US7443005 Lens structures suitable for use in image sensors and method for making the same
10/23/2008US20080258128 Phase-changeable memory devices
10/23/2008US20080258127 Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device
10/23/2008US20080258126 Memory Cell Sidewall Contacting Side Electrode
10/23/2008US20080258125 Resistive memory cell fabrication methods and devices
10/21/2008US7439536 Phase change memory cell with tubular heater and manufacturing method thereof
10/16/2008US20080253167 Integrated Circuit, Method of Operating an Integrated Circuit, Method of Manufacturing an Integrated Circuit, Active Element, Memory Module, and Computing System
10/16/2008US20080251778 Four-terminal programmable via-containing structure and method of fabricating same
10/09/2008US20080248632 Methods of Fabricating Multi-Bit Phase-Change Memory Devices and Devices Formed Thereby
10/09/2008US20080246016 Device With Damaged Breakdown Layer
10/07/2008US7433227 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
10/07/2008US7432577 Semiconductor component for the detection of radiation, electronic component for the detection of radiation, and sensor system for electromagnetic radiation
10/02/2008US20080237567 Optimized solid electrolyte for programmable metallization cell devices and structures
10/02/2008US20080237566 Phase change memory device and method of fabricating the same
10/02/2008US20080237565 Phase change memory device to prevent thermal cross-talk and method for manufacturing the same
10/02/2008US20080237564 Phase-Change Memory Device Using Sb-Se Metal Alloy and Method of Fabricating the Same
10/02/2008US20080237563 Diode/superionic conductor/polymer memory structure
10/01/2008EP1974369A2 A method of microminiaturizing a nano-structure
09/2008
09/24/2008EP1972016A2 The fabricating method of single electron transistor (set) by employing nano-lithographical technology in the semiconductor process
09/18/2008US20080224119 Phase change memory element and method of making the same
09/18/2008US20080224118 Heat-shielded low power pcm-based reprogrammable efuse device
09/16/2008US7425720 Semiconductor device
09/04/2008US20080211022 Semiconductor device having a triple gate transistor and method for manufacturing the same
09/04/2008US20080210922 Storage nodes and methods of manufacturing and operating the same, phase change memory devices and methods of manufacturing and operating the same
09/04/2008US20080210921 Silver selenide film stoichiometry and morphology control in sputter deposition
09/04/2008US20080209876 a mixture of organic solvents, dispersed silica nanostructure particles and an electrolyte; gels used in electronics, capacitors, batteries, fuel cell membranes, dielectrics, electrochromic devices, dye sensitive solar cells, antistatic coatings or gas separation membranes
09/02/2008US7420200 Damascene phase change memory
09/02/2008US7420198 Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same
08/2008
08/28/2008WO2008060646A3 Semiconductor device having carbon nanotube interconnects and method of fabrication
08/28/2008US20080203378 Semiconductor memory device and method of manufacturing the same
08/28/2008US20080203377 Methods of manufacturing non-volatile memory devices by implanting metal ions into grain boundaries of variable resistance layers, and related devices
08/28/2008US20080203376 Phase change memories with improved programming characteristics
08/28/2008US20080203375 Memory Cell with Memory Element Contacting Ring-Shaped Upper End of Bottom Electrode
08/21/2008US20080197337 PHASE-CHANGE TaN RESISTOR BASED TRIPLE-STATE/MULTI-STATE READ ONLY MEMORY
08/21/2008US20080197333 Programmable Resistive Memory Cell with Self-Forming Gap
08/21/2008DE102007007159A1 Gunn-Diode Gunn diode
08/20/2008CN100413114C Zinc oxide negative resistance device and producing method thereof
08/14/2008WO2008095639A1 Gunn diode
08/07/2008US20080188034 Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance
08/07/2008US20080186760 Programmable fuse/non-volatile memory structures using externally heated phase change material
08/07/2008US20080185575 Manufacture method of multilevel phase-change memory and operating method thereof
08/07/2008US20080185573 Methods for forming resistive switching memory elements
08/07/2008US20080185572 Methods for forming resistive switching memory elements
08/07/2008US20080185571 Resistive memory including buried word lines
08/07/2008US20080185569 Phase change random access memories including a word line formed of a metal material and methods of forming the same
08/07/2008US20080185568 Nonvolatile memory devices and method of manufacturing the same
08/07/2008US20080185567 Methods for forming resistive switching memory elements
08/05/2008US7408240 Memory device
07/2008
07/31/2008US20080182357 Method of forming a memory device with switching glass layer
07/31/2008US20080179585 Substrate; a metal plug on the substrate and a phase change material film on the metal plug, a heating electrode on the phase change material film, wherein the heating electrode is electrically connected to the phase change material film; conductive layer on the heating electrode
07/31/2008US20080179584 Memory cell having a side electrode contact
07/29/2008US7405420 Method and system for chalcogenide-based nanowire memory
07/29/2008US7405419 Unidirectionally conductive materials for interconnection
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