Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
08/2004
08/12/2004US20040154704 Forming intermetallics, alloy, ceramic or composite
08/11/2004EP1445774A2 Magnetic random access memory device
08/11/2004EP1444709A1 Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device
08/11/2004EP1381876B1 Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same
08/11/2004EP1135696B1 Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor
08/11/2004CN1519857A Semiconductor memory appts. having magnetic interference ruduced
08/11/2004CN1519856A Thermally-assisted magnetic writing using oxide layer and current-induced heating
08/11/2004CN1519817A Rotary valve type magnetic head and magnetic recorder using such magnetic head
08/11/2004CN1519816A Fabrication of magnetoresistance sensor structure having spacer layer produced by multiple position and oxidation steps
08/10/2004US6775182 Integrated magnetoresistive semiconductor memory configuration
08/10/2004US6775111 Trilayer seed layer structure for spin valve sensor
08/10/2004US6775110 Magnetoresistance effect device with a Ta, Hf, or Zr sublayer contacting an NiFe layer in a magneto resistive structure
08/10/2004US6774627 Leak magnetism detection sensor for magnetic flaw detection system
08/10/2004US6774004 Nano-scale resistance cross-point memory array
08/10/2004US6773515 Forming a bottom spin valve sensor element having a synthetic antiferromagnetic (syaf) pinned layer, based on a nickel-chromium magnoresistive enhancing seed layer and a iron tantalum oxide covering layer
08/05/2004WO2004066407A1 Two-step magnetic tunnel junction stack deposition
08/05/2004WO2004066387A1 Magnetic storage cell, magnetic memory device, and magnetic memory device manufacturing method
08/05/2004WO2004066308A1 Magnetic memory device, write current driver circuit, and write current driving method
08/05/2004WO2004032144A3 Spacer integration scheme in mram technology
08/05/2004US20040152265 Method for forming MRAM bit having a bottom sense layer utilizing electroless plating
08/05/2004US20040152227 Magnetic memory device having yoke layer, and manufacturing method
08/05/2004US20040152218 Synthetic-ferrimagnet sense-layer for high density MRAM applications
08/05/2004US20040151052 Semiconductor memory device with magnetic disturbance reduced
08/05/2004US20040150922 Magneto-resistive device and method of manufacturing same, magnetic head, head suspension assembly and magnetic disk apparatus
08/05/2004US20040150921 Magnetic head, head suspension assembly and magnetic disk apparatus
08/05/2004US20040150920 Magnetoresistive device and method of manufacturing same, and thin-film magnetic head and method of manufacturing same
08/05/2004US20040150059 Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication
08/05/2004US20040150016 Thin film magnetic memory device and manufacturing method therefor
08/05/2004US20040150015 High density and high programming efficiency MRAM design
08/04/2004EP1442788A2 Screening inorganic materials for catalysis
08/03/2004US6771535 Semiconductor device
08/03/2004US6771534 Thermally-assisted magnetic writing using an oxide layer and current-induced heating
08/03/2004US6771533 Magnetic non-volatile memory coil layout architecture and process integration scheme
08/03/2004US6771473 Magnetoresistive element and method for producing the same
08/03/2004US6770491 Magnetoresistive memory and method of manufacturing the same
08/03/2004US6770382 GMR configuration with enhanced spin filtering
08/03/2004US6770210 Magnetoresistance effect element and method for producing same
07/2004
07/29/2004WO2004064149A1 Magnetic memory device
07/29/2004US20040147081 Dual-trench isolated crosspoint memory array and method for fabricating same
07/29/2004US20040146710 Metallic nanowire and method of making the same
07/29/2004US20040145943 Memory cell structures for latch memory application
07/29/2004US20040145850 Magnetoresistance device and method of fabricating the same
07/29/2004US20040145836 Magnetoresistive sensor and magnetoresistive head, and manufacturing method thereof
07/29/2004US20040145835 Differential CPP GMR head
07/29/2004US20040144997 Control of MTJ tunnel area
07/29/2004US20040144995 Tunnel magnetoresistive element
07/28/2004EP1441392A1 Magnetic memory device
07/28/2004EP1441391A2 Dual-trench isolated crosspoint memory array and method for fabricating same
07/28/2004EP1441234A2 Fluxgate sensor integrated in semiconductor substrate and method for manufacturing the same
07/28/2004CN1516188A Ferromagnetic resonance switchover for magnetic random access storage
07/28/2004CN1516187A Reading operation of multi-bit storage unit in resistor-crossed point array
07/27/2004US6768670 Writing method for magnetic random access memory using a bipolar junction transistor
07/27/2004US6768301 Hall sensor array for measuring a magnetic field with offset compensation
07/27/2004US6768152 Magnetoresistive effect element and magnetic memory device
07/27/2004US6767655 Magneto-resistive element
07/22/2004US20040141370 Memory device capable of calibration and calibration methods therefor
07/22/2004US20040141367 Magneto-resistance effect element and magnetic memory
07/22/2004US20040141366 Semiconductor integrated circuit device
07/22/2004US20040141365 System for and method of four-conductor magnetic random access memory cell and decoding scheme
07/22/2004US20040141262 Magnetoresistive sensor including magnetic domain control layers having high electric resistivity, magnetic head and magnetic disk apparatus
07/22/2004US20040141261 GMR element having fixed magnetic layer provided on side surface of free magnetic layer
07/22/2004US20040141257 Magnetic sensing element including a pair of antiferromagnetic layers separated by spacer section in track width direction and method for fabricating same
07/22/2004US20040140522 Magnetic storage apparatus and manufacturing method thereof
07/22/2004US20040140492 Thin film magnetic memory device
07/21/2004EP1439527A2 Enhanced spin-valve sensor with engineered overlayer
07/21/2004EP1438755A2 Vertical hall sensor
07/21/2004EP1438722A1 Magnetic memory with write inhibit selection and the writing method for same
07/21/2004CN1515010A Method for writing into magnetoresistive memory cells and magnetoresistive memory which can be written into according to said method
07/20/2004US6765824 Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memory
07/20/2004US6765823 Magnetic memory cell with shape anisotropy
07/20/2004US6765821 Magnetic memory
07/20/2004US6765769 Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head
07/20/2004US6765768 Thin-film magnetic head having ensured insulation between shield and magnetic detecting element
07/20/2004US6765250 Self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
07/20/2004US6764960 Manufacture of composite oxide film and magnetic tunneling junction element having thin composite oxide film
07/20/2004US6764865 Semiconductor memory device including magneto resistive element and method of fabricating the same
07/15/2004WO2004059755A1 Cpp magnetoresistive device, method for manufacturing same, and magnetic storage having cpp magnetoresistive device
07/15/2004WO2004059745A1 Magnetic switching device and magnetic memory
07/15/2004WO2003107350B1 Magnetoresistive random access memory with reduced switching field
07/15/2004US20040137681 Magnetic memory device and its production method
07/15/2004US20040136235 Magnetic storage element, recording method using the same, and magnetic storage device
07/15/2004US20040136234 Magnetic storage element, recording method using the same, and magnetic storage device
07/15/2004US20040136233 Magnetic storage element, recording method using the magnetic storage element
07/15/2004US20040136232 Magnetoresistive element and magnetic memory unit
07/15/2004US20040136120 Three terminal magnetic head and magnetic recording apparatus provided with the said head
07/15/2004US20040135665 Controlled electron mobility galvanomagnetic devices
07/15/2004US20040135220 Noise-proof semiconductor device having a Hall effect element
07/15/2004US20040135184 Nonvolatile magnetic memory device and manufacturing method thereof
07/15/2004US20040134876 Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same
07/14/2004EP1437747A1 Magnetoresistive random access memory with high selectivity
07/14/2004EP1437424A2 Method and apparatus for smoothing surfaces on an atomic scale
07/14/2004EP1436849A2 Compact vertical hall sensor
07/14/2004CN1513120A Method of orienting an axis of magnetization of a first magnetic element with respect to a second magnetic element, semimanufacture for obtaining a sensor, sensor for measuring magnetic field
07/14/2004CN1513119A Magnetic sensor
07/14/2004CN1512603A Oxide giant magnet resistor spin valve, preparing process and its use
07/13/2004US6762952 Minimizing errors in a magnetoresistive solid-state storage device
07/13/2004US6762916 Thin-film magnetic head with low barkhausen noise and floating-type magnetic head therewith
07/13/2004US6762077 Integrated sensor packages and methods of making the same
07/08/2004WO2004012197A3 Magnetoresistive random access memory with soft magnetic reference layer
07/08/2004US20040131888 Magnetic sensor
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