| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 09/02/2004 | US20040171272 Method of etching metallic materials to form a tapered profile |
| 09/02/2004 | US20040170867 Forming multilayers comprising alloys, iron oxide, nonmagnetic, ferromagnetic, pinning and capping layers on substrates, used as giant magnetoresistance (GMR) detectors; magnetic recording media or disc heads |
| 09/02/2004 | US20040170761 Adjusting the temperature of solutions for metal deposition of thin films |
| 09/02/2004 | US20040169965 Multilayer; spacer positioned between ferromagnetic layers on substrates |
| 09/02/2004 | US20040169964 Method of making a spin valve sensor with a controlled ferromagnetic coupling field |
| 09/02/2004 | US20040169214 Magnetic storage apparatus having dummy magnetoresistive effect element and manufacturing method thereof |
| 09/02/2004 | US20040169006 Magnetoresistance effect element and method for producing same |
| 09/01/2004 | EP1452623A1 Precursor solution and method for controlling the composition of MOCVD deposited PCMO |
| 09/01/2004 | EP1451834A1 Method of preparing polymer composite using unidirectionally solidified giant magnetostrictive material |
| 09/01/2004 | EP1451600A1 Sensor arrangement |
| 09/01/2004 | EP1451591A1 Magnetoresistive speed and direction sensing method and apparatus |
| 09/01/2004 | EP1371100A4 A transpinnor-based switch and applications |
| 09/01/2004 | CN1526146A Compounds having giant magnetoresistance and spin-polarized tunnels, the production thereof and their use |
| 09/01/2004 | CN1526138A Magnetic memory configuration |
| 09/01/2004 | CN1525582A Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic heusler alloy in the pinned layer |
| 09/01/2004 | CN1164953C Spin-valve sensor |
| 08/31/2004 | US6785160 Method of providing stability of a magnetic memory cell |
| 08/31/2004 | US6785159 Combination etch stop and in situ resistor in a magnetoresistive memory and methods for fabricating same |
| 08/31/2004 | US6784774 Magnetic switch capable of performing normal detection for a long period of time |
| 08/31/2004 | US6784659 Magnetoresistive speed and direction sensing method and apparatus |
| 08/31/2004 | US6784509 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus |
| 08/31/2004 | US6783999 Subtractive stud formation for MRAM manufacturing |
| 08/31/2004 | US6783995 Protective layers for MRAM devices |
| 08/31/2004 | US6783994 Method of fabricating a self-aligned magnetic tunneling junction and via contact |
| 08/31/2004 | US6783874 Magnetic sensor having second antiferromagnetic layers and two types of electrode layers on free magnetic layer and manufacturing method thereof |
| 08/26/2004 | WO2004072978A2 High density and high programming efficiency mram design |
| 08/26/2004 | US20040166640 Method for preparing a ring-formed body, and magnetic memory device and method for manufacturing the same |
| 08/26/2004 | US20040166618 Low remanence flux concentrator for MRAM devices |
| 08/26/2004 | US20040165453 MRAM having SAL layer |
| 08/26/2004 | US20040165428 Magnetic switching device and magnetic memory using the same |
| 08/26/2004 | US20040165426 Magnetic memory array, method for recording in a magnetic memory array and method for reading out from a magnetic memory array |
| 08/26/2004 | US20040165423 Digital magnetic storage cell device |
| 08/26/2004 | US20040165321 Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated film having magnetic sublayers and nanomagnetic interlayer |
| 08/26/2004 | US20040165320 Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic heusler alloy in the pinned layer |
| 08/26/2004 | US20040164840 Extraordinary hall effect sensors and arrays |
| 08/26/2004 | US20040164826 Magnetic switch capable of performing normal detection for a long period of time |
| 08/26/2004 | US20040164332 Methods of manufacturing low cross-talk electrically programmable resistance cross point memory structures |
| 08/26/2004 | US20040164327 Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method |
| 08/25/2004 | EP1450177A2 Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic Heusler alloy in the pinned layer |
| 08/25/2004 | EP1449239A2 Magneto-resistive bit structure and method of manufacturing therefor |
| 08/25/2004 | EP1449220A2 Magnetoresistive memory cell comprising a dynamic reference layer |
| 08/25/2004 | EP1449219A1 Magnetoresistance random access memory with adjustable scalability |
| 08/25/2004 | EP1370884A4 A transpinnor-based sample-and-hold circuit and applications |
| 08/25/2004 | CN1524269A MTJ MRAM series-parallel architecture |
| 08/25/2004 | CN1523648A Ultra-violet treatment for a tunnel barrier layer in a tunnel junction device |
| 08/25/2004 | CN1523575A Magneto-resistance effect element, magnetic head and magnetic storage device |
| 08/24/2004 | US6781910 Small area magnetic memory devices |
| 08/24/2004 | US6781874 Thin film magnetic memory device including memory cells having a magnetic tunnel junction |
| 08/24/2004 | US6781873 Non-volatile memory device capable of generating accurate reference current for determination |
| 08/24/2004 | US6781872 Magnetic memory |
| 08/24/2004 | US6781871 Magnetic random access memory and method of operating the same |
| 08/24/2004 | US6781800 Magnetoresistance effect film and device |
| 08/24/2004 | US6781799 Current perpendicular-to-the-plane structure spin valve magnetoresistive head |
| 08/24/2004 | US6781367 Rotation sensor |
| 08/24/2004 | US6781174 Magnetoresistive memory device assemblies |
| 08/24/2004 | US6781173 MRAM sense layer area control |
| 08/24/2004 | US6780738 Pattern forming method, method of making microdevice, method of making thin-film magnetic head, method of making magnetic head slider, method of making magnetic head apparatus, and method of making magnetic recording and reproducing apparatus |
| 08/24/2004 | US6780655 Methods of forming magnetoresistive memory devices |
| 08/24/2004 | US6780654 Methods of forming magnetoresistive memory device assemblies |
| 08/24/2004 | US6780653 Methods of forming magnetoresistive memory device assemblies |
| 08/24/2004 | US6780524 In-situ oxidized films for use as gap layers for a spin-valve sensor and methods of manufacture |
| 08/19/2004 | WO2004070747A1 Heat treatment system |
| 08/19/2004 | WO2004069767A1 Ferromagnetic material |
| 08/19/2004 | US20040161636 Method of depositing thin films for magnetic heads |
| 08/19/2004 | US20040160822 Thin film magnetic memory device for writing data of a plurality of bits in parallel |
| 08/19/2004 | US20040160821 Hybrid semiconductor - magnetic spin based memory |
| 08/19/2004 | US20040160815 High-sensitivity magnetic field sensor |
| 08/19/2004 | US20040160814 Hybrid semiconductor - magnetic spin based memory with low transmission barrier |
| 08/19/2004 | US20040160809 Magnetic RAM and array architecture using a two transistor, one MTJ cell |
| 08/19/2004 | US20040160800 Stacked hybrid semiconductor-magnetic spin based memory |
| 08/19/2004 | US20040160796 Method of making hybrid semiconductor - magnetic spin based memory |
| 08/19/2004 | US20040160707 Exchange coupling film and electoresistive sensor using the same |
| 08/19/2004 | US20040160700 Pattern forming method, method of manufacturing magneto-resistive device and magnetic head using same, and head suspension assembly and magnetic disk apparatus |
| 08/19/2004 | US20040160251 High density magnetic RAM and array architecture using a one transistor, one diode, and one MTJ cell |
| 08/19/2004 | US20040158973 Spin-valve giant magnetoresistive head and method of manufacturing the same |
| 08/18/2004 | EP1447675A2 Magnetic sensor and position detector |
| 08/18/2004 | EP1447674A2 Magnetic field sensing device and method for fabricating thereof |
| 08/18/2004 | CN1522466A An improved method for forming minimally spaced mram structures |
| 08/18/2004 | CN1521826A Dual-trench isolated crosspoint memory array and method for fabricating same |
| 08/18/2004 | CN1521761A Magnetic reluctance mode ram circuit |
| 08/18/2004 | CN1521760A Film magnetic memory device of programmed element |
| 08/18/2004 | CN1162863C Device for weighting cell resistances in magnetoresistive memory |
| 08/18/2004 | CN1162321C Amorphous La1-xSrxMnO3-5 compound and its prepn |
| 08/17/2004 | US6778434 Magnetic random access memory device with a reduced number of interconnections for selection of address |
| 08/17/2004 | US6778430 Magnetic thin-film memory device for quick and stable reading data |
| 08/17/2004 | US6778427 Magnetoresistive memory with a wiring for suppressing crosstalk |
| 08/17/2004 | US6778426 Magnetic random access memory including memory cell unit and reference cell unit |
| 08/17/2004 | US6778425 Magnetoresistance effect memory device and method for producing the same |
| 08/17/2004 | US6778421 Memory device array having a pair of magnetic bits sharing a common conductor line |
| 08/17/2004 | US6778363 Magnetoresistive head having longitudinal biasing by providing undirectional magnetic anisotropy |
| 08/17/2004 | US6777927 Magnetic sensor |
| 08/17/2004 | US6777731 Magnetoresistive memory cell with polarity-dependent resistance |
| 08/17/2004 | US6775903 Method for fabricating a top magnetoresistive sensor element having a synthetic pinned layer |
| 08/12/2004 | WO2004068607A1 Cpp-type giant manetoresistance effect element and magnetic component and magnetic device using it |
| 08/12/2004 | US20040157427 Nonvolatile magnetic memory device and manufucturing method thereof |
| 08/12/2004 | US20040157067 Substrate, magnetic sensitive detectors, hard memebrane which is stress releiving exterior; shockproof |
| 08/12/2004 | US20040156232 Magnetic memory |
| 08/12/2004 | US20040156231 Magnetic memory |
| 08/12/2004 | US20040155345 configured by a logic circuit and a memory circuit and changing in function every certain time interval |
| 08/12/2004 | US20040155307 Method for manufacture of magneto-resistive bit structure |