| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 09/30/2004 | US20040188732 Semiconductor memory device comprising magneto resistive element and its manufacturing method |
| 09/30/2004 | US20040188730 Magnetoresistive (MR) magnetic data storage device with sidewall spacer layer isolation |
| 09/29/2004 | EP1463110A2 Semiconductor memory device comprising magneto resistive element and its manufacturing method |
| 09/29/2004 | EP1463060A2 Method for fabricating nano-scale resistance cross-point memory array and device |
| 09/29/2004 | CN1532958A Megnetoelectric changing element and its producing method |
| 09/29/2004 | CN1532303A Precursor solution for controling MOCVD deposited PCMO component and method |
| 09/29/2004 | CN1169152C Storage cell arra yand corresponding production method |
| 09/28/2004 | US6798691 Asymmetric dot shape for increasing select-unselect margin in MRAM devices |
| 09/28/2004 | US6797628 Methods of forming integrated circuitry, semiconductor processing methods, and processing method of forming MRAM circuitry |
| 09/28/2004 | US6797536 Magnetic memory device having yoke layer, and manufacturing method |
| 09/23/2004 | WO2004082026A1 Magnetoresistive element and magnetic memory device |
| 09/23/2004 | WO2004081943A1 Magnetic memory device and read method thereof |
| 09/23/2004 | US20040185675 Magnetoresistive random access memory (mram) cell patterning |
| 09/23/2004 | US20040184315 Thin film magnetic memory device provided with program element |
| 09/23/2004 | US20040184313 Nonvolatile magnetic memory device and method of writing data into tunnel magnetoresistance device in nonvolatile magnetic memory device |
| 09/23/2004 | US20040184311 Magnetic sensor |
| 09/23/2004 | US20040184199 Magnetic tunnel effect type magnetic head, and recorder/player |
| 09/23/2004 | US20040184197 GMR improvement in CPP spin valve head by inserting a current channeling layer (CCL) |
| 09/23/2004 | US20040183562 Device for measuring a b-component of a magnetic field, a magnetic field sensor and an ammeter |
| 09/23/2004 | US20040183110 Magnetic memory unit and magnetic memory array |
| 09/23/2004 | US20040183099 Antiferromagnetically stabilized pseudo spin valve for memory applications |
| 09/23/2004 | US20040183091 Magnetic tunneling junction element having thin composite oxide film |
| 09/23/2004 | DE10309244A1 Thin film magnetic memory element has a tunnel barrier layer that is at least partially comprised of Yttrium oxide, arranged between ferromagnetic layers |
| 09/23/2004 | DE10309243A1 Tunneling magnetoresistive thin layer element for magnetic sensors and magnetic data reading heads has tunnel barrier layer of yttrium oxide |
| 09/23/2004 | DE102004003537A1 Magnetische Speichervorrichtung, Verfahren zu deren Herstellung sowie integrierte Schaltung mit einer solchen Speichervorrichtung A magnetic memory device, to processes for their preparation as well as integrated circuit having such a memory device |
| 09/22/2004 | EP1460442A2 A magnetic sensor |
| 09/22/2004 | EP1460150A1 Method for fabricating bismuth thin film and device using said film |
| 09/22/2004 | EP1459324A2 Increased magnetic stability devices suitable for use as sub-micron memories |
| 09/22/2004 | EP1459038A1 System and method for using magneto-resistive sensors as dual purpose sensors |
| 09/22/2004 | EP1366528B1 Current-responsive resistive component |
| 09/22/2004 | EP1018118B1 Mram with shared word and digit lines |
| 09/22/2004 | CN1531642A Azimuth meter |
| 09/22/2004 | CN1531026A Semiconductor device and producing method thereof |
| 09/21/2004 | US6795340 Non-volatile magnetic memory |
| 09/21/2004 | US6795339 Thin film magnetic memory device having communication function, and distribution management system and manufacturing step management system each using thereof |
| 09/21/2004 | US6795336 Magnetic random access memory |
| 09/21/2004 | US6795335 Thin film magnetic memory device for conducting data write operation by application of a magnetic field |
| 09/21/2004 | US6795281 Magneto-resistive device including soft synthetic ferrimagnet reference layer |
| 09/21/2004 | US6794697 Asymmetric patterned magnetic memory |
| 09/21/2004 | US6794696 Magnetic memory device and method of manufacturing the same |
| 09/21/2004 | US6794695 Magneto resistive storage device having a magnetic field sink layer |
| 09/21/2004 | US6794052 Polymer arrays from the combinatorial synthesis of novel materials |
| 09/21/2004 | US6792670 Method of manufacturing a magnetoresistive element substructure |
| 09/16/2004 | WO2004079744A2 Magnetic memory cell junction and method for forming a magnetic memory cell junction |
| 09/16/2004 | WO2003067601A8 Magnetic storage unit using ferromagnetic tunnel junction element |
| 09/16/2004 | WO2003026131A3 Standard cell arrangement for a magneto-resistive component |
| 09/16/2004 | US20040180529 Semiconductor device and manufacturing method therefor |
| 09/16/2004 | US20040180237 Oxide buffer layer for improved magnetic tunnel junctions |
| 09/16/2004 | US20040179393 Magnetic random access memory and method of manufacturing the same |
| 09/16/2004 | US20040179312 Low resistance antiparallel tab magnetoresistive sensor |
| 09/16/2004 | US20040179311 Method of adjusting CoFe free layer magnetostriction |
| 09/16/2004 | US20040179309 magnetoresistance at room temperature; spintronics device; very fast film growth speed in the electrodepositing method, and a thickness of a Bi thin film can be controlled easily in the sputtering method |
| 09/15/2004 | EP1456873A1 A method of improving surface planarity prior to mram bit material deposition |
| 09/15/2004 | EP1456658A2 Sensor and method for measuring the areal density of magnetic nanoparticles on a micro-array |
| 09/15/2004 | EP0876661B1 Magnetic head having an integrated circuit and method of manufacturing same |
| 09/15/2004 | CN1167145C Tunnel junction structure and its manufacture and magnetic sensor |
| 09/14/2004 | US6791875 Thin film magnetic memory device realizing both high-speed data reading operation and stable operation |
| 09/14/2004 | US6791874 Memory device capable of calibration and calibration methods therefor |
| 09/14/2004 | US6791873 Apparatus and method for generating a write current for a magnetic memory cell |
| 09/14/2004 | US6791869 Nonvolatile memory device with configuration switching the number of memory cells used for one-bit data storage |
| 09/14/2004 | US6791868 Ferromagnetic resonance switching for magnetic random access memory |
| 09/14/2004 | US6791867 Selection of memory cells in data storage devices |
| 09/14/2004 | US6791866 Magnetoresistive film, method of manufacturing magnetoresistive film, and memory using magnetoresistive film |
| 09/14/2004 | US6791865 Memory device capable of calibration and calibration methods therefor |
| 09/14/2004 | US6791856 Methods of increasing write selectivity in an MRAM |
| 09/14/2004 | US6791807 Spin-valve magnetic transducing element and magnetic head having free layer with negative magnetostriction |
| 09/14/2004 | US6791804 Magnetoresistive-effect device and method for manufacturing the same |
| 09/14/2004 | US6791792 Magnetic field sensor utilizing anomalous hall effect magnetic film |
| 09/14/2004 | US6791320 Magnetic detection device adapted to control magnetization of free magnetic layer by using antiferromagnetic layer, and manufacturing method for the same |
| 09/14/2004 | US6791313 Electrical current detector having a U-shaped current path and hall-effect device |
| 09/14/2004 | US6790541 Exchange coupling film and electroresistive sensor using the same |
| 09/10/2004 | WO2004077585A1 Semiconductor sensor and method for manufacturing same |
| 09/10/2004 | WO2004077075A2 Extraordinary hall effect sensors and arrays |
| 09/09/2004 | US20040175848 Magnetic memory cell junction and method for forming a magnetic memory cell junction |
| 09/09/2004 | US20040175847 Buried magnetic tunnel-junction memory cell and methods |
| 09/09/2004 | US20040175846 Simplified magnetic memory cell |
| 09/09/2004 | US20040175596 Magnetoresistive element and magnetic memory device |
| 09/09/2004 | US20040174756 Magnetic memory device and magnetic substrate |
| 09/09/2004 | US20040174740 Magnetic tunnel junction structures and methods of fabrication |
| 09/09/2004 | US20040174640 Magnetoresistive head |
| 09/09/2004 | US20040174165 Leakage flux detector |
| 09/09/2004 | US20040173828 Magnetic memory device and method of manufacturing the same |
| 09/09/2004 | DE10308640A1 Magneto-resistive topical magnetic resonance cell for magneto-resistive sensors has soft-magnetic layers linked antiparallel via an intermediate layer to form a soft-magnetic layered system |
| 09/08/2004 | EP1455390A2 Buried magnetic tunnel-junction memory cell and methods for fabricating |
| 09/08/2004 | EP1454324A2 Segmented write line architecture |
| 09/08/2004 | EP1454321A2 Asymmetric mram cell and bit design for improving bit yield |
| 09/08/2004 | CN1527320A Buried magnetic tunnel junction storage cell and method |
| 09/08/2004 | CN1527319A Magnetic random access memory with asymmetric clad conductor |
| 09/08/2004 | CN1166015C Magnetic tunnel device, method of mfg. thereof and magnetic head |
| 09/08/2004 | CN1166014C Structure and fabrication process of inductors on semiconductor chip |
| 09/08/2004 | CN1165777C Magnetic detector and its production method, and magnetic head using same |
| 09/07/2004 | US6788605 Shared volatile and non-volatile memory |
| 09/07/2004 | US6788571 Thin film magnetic memory device having an access element shared by a plurality of memory cells |
| 09/07/2004 | US6788570 Magnetic random access memory |
| 09/07/2004 | US6788569 Thin film magnetic memory device reducing a charging time of a data line in a data read operation |
| 09/07/2004 | US6788568 Thin film magnetic memory device capable of conducting stable data read and write operations |
| 09/07/2004 | US6787372 Method for manufacturing MTJ cell of magnetic random access memory |
| 09/07/2004 | US6787369 Method for manufacturing a magneto-resistive effect element and a method for manufacturing a magneto-resistive effect type magnetic head |
| 09/07/2004 | US6787004 Forming antiferromagnetic layer; copper film as nonmagnetic layer formed by low pressure sputtering; exposing substrate to activating gas |
| 09/02/2004 | WO2004075311A1 Semiconductor device with hall-effect element |