Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
10/2004
10/21/2004US20040207959 CPP giant magnetoresistive head with large-area metal film provided between shield and element
10/21/2004US20040207411 Method and device for evaluating charge potential
10/21/2004US20040207399 Magnetic filter
10/21/2004US20040207398 Magnetic sensor
10/21/2004US20040207086 Magnetically lined conductors
10/21/2004US20040207031 Magnetic sensor integrated with CMOS
10/21/2004US20040206994 MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJS) and method for fabricating the same
10/21/2004US20040206619 Method to achieve low and stable ferromagnetic coupling field
10/21/2004US20040205958 Methods for fabricating MRAM device structures
10/21/2004DE10358963A1 Verfahren zum Herstellen einer MTJ-Zelle eines magnetischen Direktzugriffsspeichers A method for producing an MTJ cell of a magnetic random access memory
10/21/2004DE10313948A1 Hall element made using semiconductor technology for use in integrated circuits formed of first and second semiconductor regions in a recess
10/20/2004EP1469597A2 A magnetic filter
10/20/2004EP1469531A1 Compound semiconductor multilayer structure, hall device, and hall device manufacturing method
10/20/2004EP1469530A1 High-sensitivity magnetic field sensor
10/20/2004EP1469511A2 Method of fabricating a magneto-resistive random access memory (MRAM) device
10/20/2004CN1538552A 磁滤波器 Magnetic filter
10/20/2004CN1538539A Method for forming MTJ of magnetic RAM
10/20/2004CN1538471A Detection switch
10/20/2004CN1538452A System and method of four-conductor mangnetic random access memory cell and decoding scheme
10/20/2004CN1538386A Magnetoresistive sensor with antiparalle coupled lead/sensor overlap region
10/20/2004CN1538182A Estimating method and device for hot-line electrical potential
10/20/2004CN1172313C Circuit device and method for accelerated ageing in magnetoresistance memory
10/20/2004CN1172312C Optimum conductive body layout for writing magnet RAM with improved performance
10/19/2004US6807094 Magnetic memory
10/19/2004US6807092 MRAM cell having frustrated magnetic reservoirs
10/19/2004US6807091 Magnetic switching element and a magnetic memory
10/19/2004US6807090 Method of making hybrid semiconductor—magnetic spin based memory
10/19/2004US6807089 Method for operating an MRAM semiconductor memory configuration
10/19/2004US6807034 Dual spin-valve CCP type thin-film magnetic element with multi free layers
10/19/2004US6807033 Magnetic sensor with reduced wing region magnetic sensitivity
10/19/2004US6806804 Magnetic detecting element having β-values selected for free magnetic layer and pinned magnetic layer
10/19/2004US6806527 Recessed magnetic storage element and method of formation
10/19/2004US6806524 Thin film magnetic memory device
10/19/2004US6806523 Magnetoresistive memory devices
10/19/2004US6806127 Method and structure for contacting an overlying electrode for a magnetoelectronics element
10/19/2004US6806096 Integration scheme for avoiding plasma damage in MRAM technology
10/14/2004WO2004088763A1 Cpp structure magnetoresistance effect device and head slider
10/14/2004WO2004088752A1 Magnetic memory device and magnetic memory device write method
10/14/2004WO2004088751A1 Magnetic memory cell, magnetic memory device, and magnetic memory device manufacturing method
10/14/2004WO2004040602A3 Patterning metal stack layers of magnetic switching device, utilizing a bilayer metal hardmask
10/14/2004US20040202031 Magnetic memory device, data copying apparatus, data copying system, recording medium and data copying method
10/14/2004US20040202022 Shared volatile and non-volatile memory
10/14/2004US20040202018 Magnetic non-volatile memory coil layout architecture and process integration scheme
10/14/2004US20040201930 Magnetoresistive head and magnetic recording-reproducing apparatus
10/14/2004US20040201919 Magnetoresistive memory and method of manufacturing the same
10/14/2004US20040201378 Electrical property evaluation apparatus
10/14/2004US20040201377 Magnetoresistive sensor
10/14/2004US20040201070 Self-aligned, low-resistance, efficient MRAM read/write conductors
10/14/2004US20040201042 Structure having pores and its manufacturing method
10/13/2004EP1467217A2 Magnetic sensor
10/13/2004EP1467216A2 Method for manufacturing magnetic field detecting element
10/13/2004EP1466330A2 Resistive memory elements with reduced roughness
10/13/2004EP1466329A2 Magnetic device with magnetic tunnel junction, memory array and read/write methods using same
10/13/2004EP1466187A1 Integrated magnetic field strap for signal isolator
10/13/2004CN1537336A Method of fabricating thermally stable MTJ cell and apparatus
10/13/2004CN1171323C Magnetic element with double magnetic state
10/13/2004CN1171203C Magnetic recording device, method for adjusting magnetic head and magnetic recording medium
10/12/2004US6804146 Hybrid semiconductor—magnetic spin based memory
10/12/2004US6804144 Magnetic random access memory
10/12/2004US6804090 Ferromagnetic tunnel junction element exhibiting high magnetoresistivity at finite voltage and tunnel magnetoresistive head provided therewith, magnetic head slider, and magnetic disk drive
10/12/2004US6804081 Structure having pores and its manufacturing method
10/12/2004US6803619 Semiconductor memory device
10/12/2004US6803618 MRAM configuration having selection transistors with a large channel width
10/12/2004US6803616 Magnetic memory element having controlled nucleation site in data layer
10/12/2004US6803615 Magnetic tunnel junction MRAM with improved stability
10/12/2004US6803274 Magnetic memory cell having an annular data layer and a soft reference layer
10/12/2004US6803260 Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
10/07/2004WO2004086407A1 Magnetic memory device, sense amplifier circuit, and reading method of magnetic memory device
10/07/2004WO2003069690A3 Magnetic field sensor
10/07/2004US20040197957 Integrated sensor packages and methods of making the same
10/07/2004US20040197579 Magnetic element with insulating veils and fabricating method thereof
10/07/2004US20040196744 Control device for reversing the direction of magnetisation without an external magnetic field
10/07/2004US20040196681 Reduction of noise, and optimization of magnetic field sensitivity and electrical properties in magnetic tunnel junction devices
10/07/2004US20040195639 Method for fine tuning offset in MRAM devices
10/07/2004US20040195602 Magnetic random access memory device having high-heat disturbance resistance and high write efficiency
10/07/2004US20040194292 Method of manufacturing a magnetic tunnel junction device
10/06/2004CN1535467A Current source and drain arrangement for magnetoresistive memories (MRAMS)
10/06/2004CN1534680A Magnetic resistance type random access internal storage circuit
10/06/2004CN1534679A Magnetic RAM using magnetic resistance effect to store information
10/06/2004CN1534678A 磁性传感器 Magnetic Sensors
10/06/2004CN1534677A Semiconductor device and data writing method therefor
10/06/2004CN1534605A Magnetic resistance element, magnetic reproducing head and magnetic reproducing apparatus
10/06/2004CN1534604A Magnetic RAM and its data reading method
10/06/2004CN1534603A Magnetic resistance effect magnetic head and its mfg. method
10/06/2004CN1534278A 磁传感器 The magnetic sensor
10/06/2004CN1169745C Zinc ferrite material with giant magnetic resistance effect and its prepn process
10/05/2004US6801451 Magnetic memory devices having multiple bits per memory cell
10/05/2004US6801448 Common bit/common source line high density 1T1R R-RAM array
10/05/2004US6801414 Tunnel magnetoresistance effect device, and a portable personal device
10/05/2004US6801413 Magnetic sensor, magnetic head and magnetic recording apparatus
09/2004
09/30/2004US20040191981 Methods of fabricating an MRAM device using chemical mechanical polishing
09/30/2004US20040191557 Method of patterning magnetic products using chemical reaction
09/30/2004US20040190206 Magnetoresistive head and manufacturing method thereof
09/30/2004US20040190205 Thin film magnetic head and method for manufacturing the same
09/30/2004US20040190204 Magnetoresistive element, magnetoresistive head and magnetic reproducing apparatus
09/30/2004US20040190189 Method for manufacturing MTJ cell of magnetic random access memory
09/30/2004US20040189295 Magnetic sensor and method of producing the same
09/30/2004US20040189294 Magnetic sensor
09/30/2004US20040188830 Magnetoresistive random access memory with high selectivity
09/30/2004US20040188733 Magnetic random access memory
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