H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof

Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
11/2004
11/24/2004	CN1550017A MRAM with midpoint generator reference
11/24/2004	CN1177326C MRAM device
11/23/2004	US6822897 Thin film magnetic memory device selecting access to a memory cell by a transistor of a small gate capacitance
11/23/2004	US6822896 Magnetic random access memory
11/23/2004	US6822895 Magnetic memory device
11/23/2004	US6821907 Etching methods for a magnetic memory cell stack
11/18/2004	WO2004077075A3 Extraordinary hall effect sensors and arrays
11/18/2004	US20040229430 Fabrication process for a magnetic tunnel junction device
11/18/2004	US20040229082 substrate, zirconium-alumina lower and/or upper layer, ferromagnetic, anti-ferromagnetic, and tunneling barrier layers; improved thermal stability; disk drives
11/18/2004	US20040228198 Semiconductor memory device including reference memory cell and control method
11/18/2004	US20040228046 Magnetoresistive element and method for producing the same
11/18/2004	US20040228045 CPP giant magnetoresistive element
11/18/2004	US20040228044 Spin-valve magnetoresistive element having fixed magnetic layer of epitaxial laminate including magnetic layer and non-magnetic layer
11/18/2004	US20040228024 Magnetization control method and information recording apparatus
11/18/2004	US20040227172 Magnetic random access memory (MRAM) cells having split sub-digit lines
11/18/2004	DE19853659B4 Magnetfelderfassungsvorrichting und Magnetfelderfassungsgerät Magnetfelderfassungsvorrichting and magnetic field detection device
11/17/2004	EP1478027A1 Magnetic memory device and its production method
11/17/2004	EP1476891A1 Sputtering cathode and device and method for coating a substrate with several layers
11/17/2004	EP1476875A1 Mram without isolation devices
11/17/2004	CN2657206Y 磁感应器 Magnetic Sensor
11/17/2004	CN1547038A Doping method for ordered antiferromagnetic nailing and binding system
11/16/2004	US6819586 Thermally-assisted magnetic memory structures
11/16/2004	US6819585 Magnetic random access memory
11/16/2004	US6819533 Magnetoresistive head in which an interlayer coupling field applied to a free magnetic layer is reduced
11/16/2004	US6819532 Magnetoresistance effect device exchange coupling film including a disordered antiferromagnetic layer, an FCC exchange coupling giving layer, and a BCC exchange coupling enhancement layer
11/16/2004	US6818961 Oblique deposition to induce magnetic anisotropy for MRAM cells
11/16/2004	US6818549 Buried magnetic tunnel-junction memory cell and methods
11/16/2004	US6818458 Methods involving a low resistance magnetic tunnel junction structure
11/11/2004	US20040223382 Magnetic memory
11/11/2004	US20040223368 Semiconductor device
11/11/2004	US20040223355 Thin film magnetic memory device including memory cells having a magnetic tunnel junction
11/11/2004	US20040223267 Current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions and method for its fabrication
11/11/2004	US20040223266 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
11/11/2004	US20040222185 a combination of a gas containing a carbonyl group, a gas with a halogen element, and an electron donating gas is used as an etching gas; better etching rate and anisotropy
11/10/2004	EP1475847A1 Magnetic reluctance element and method for preparation thereof and nonvolatile memory comprising the element
11/10/2004	EP1474806A2 Antiferromagnetically stabilized pseudo spin valve for memory applications
11/10/2004	CN1545740A Magnetoelectric transducer and its manufacturing method
11/10/2004	CN1545151A Copper and zinc doped lanthanum, strontium, and manganese perovskite structure oxide magneto resistor material and preparation method thereof
11/10/2004	CN1545150A Lanthanum, strontium, silver and manganese oxide magneto resistor material and preparation method thereof
11/10/2004	CN1175501C Storage cell arrangement and method for producing the same
11/09/2004	US6816406 Magnetic memory configuration
11/09/2004	US6816347 Magnetoresistive element and magnetic recording apparatus
11/09/2004	US6815785 Thin film magnetic memory device and manufacturing method therefor
11/09/2004	US6815784 Magneto-resistive random access memory
11/09/2004	US6815783 Single transistor type magnetic random access memory device and method of operating and manufacturing the same
11/09/2004	US6815745 Tunnel magnetoresistive effect element, method of manufacturing tunnel magnetoresistive effect element and magnetic memory device
11/09/2004	US6815248 Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing
11/04/2004	WO2004095515A2 Methods for contracting conducting layers overlying magnetoelectronic elements of mram devices
11/04/2004	WO2004072978A3 High density and high programming efficiency mram design
11/04/2004	US20040218452 Thin film magnetic memory device for selectively supplying a desired data write current to a plurality of memory blocks
11/04/2004	US20040218443 Hybrid semiconductor-magnetic device and method of operation
11/04/2004	US20040218419 Methods for isolating memory elements within an array
11/04/2004	US20040218314 Method and apparatus for providing a magnetic tunnel transistor with a self-pinned emitter
11/04/2004	US20040218311 Dual-type magnetic detecting element in which free magnetic layer and pinned magnetic layer have suitably selected beta values
11/04/2004	US20040218310 Magnetic head and tunnel junction magneto-resistive head having plural ferromagnetic layers associated with an antiferromagnetic coupling layer for magnetically biasing the sensing free layer
11/04/2004	US20040217403 Reducing the effects of neel coupling in MRAM structures
11/04/2004	US20040217400 Magnetic random access memory
11/04/2004	US20040217399 Reducing the effects of neel coupling in MRAM structures
11/03/2004	EP1473735A1 Dual-junction magnetic memory device and read method
11/03/2004	EP1473734A1 Magnetic memory cell
11/03/2004	EP1472731A1 Discrete semiconductor component
11/03/2004	CN1542845A Magnetic memory device, data copying apparatus, data copying system, data copying program and data copying method
11/03/2004	CN1542844A Semiconductor memory device comprising magneto resistive element and its manufacturing method
11/03/2004	CN1542843A Magnetic memory device and method of writing the same
11/03/2004	CN1542748A Magnetic recording element and method of manufacturing the same
11/03/2004	CN1542743A Magnetic sensor and production method thereof, ferromagnetic tunnel junction element, and magnetic head
11/03/2004	CN1542742A Low resistance antiparallel tab magnetoresistive sensor
11/03/2004	CN1174427C Magnetoresistive random storage device
11/02/2004	US6812687 Semiconductor current detector of improved noise immunity
11/02/2004	US6812537 Magnetic memory and method of operation thereof
11/02/2004	US6812511 Magnetic storage apparatus having dummy magnetoresistive effect element and manufacturing method thereof
11/02/2004	US6812040 Method of fabricating a self-aligned via contact for a magnetic memory element
11/02/2004	US6812039 Method for producing a magnetic tunnel contact and magnetic tunnel contact
10/2004
10/28/2004	WO2004093086A2 Magnetically lined conductors
10/28/2004	US20040214353 Manufacturing method of CPP type magnetic sensor having current-squeezing path
10/28/2004	US20040213071 Magneto-resistive element
10/28/2004	US20040213042 Magnetoelectronic device with variable magnetic write field
10/28/2004	US20040213041 Magnetoelectronic memory element with inductively coupled write wires
10/28/2004	US20040213039 Magnetic ring unit and magnetic memory device
10/28/2004	US20040213037 Magnetoresistive memory and method for reading a magnetoresistive memory
10/28/2004	US20040212933 Magnetoresistive device exhibiting small and stable bias fields independent of device size variation
10/28/2004	US20040212932 Magnetoresistive effective element, thin film magnetic head, magnetic head device and magnetic recording/reproducing device
10/28/2004	US20040212360 Magnetic sensor and method of producing the same
10/28/2004	US20040211995 Magnetic random access memory including middle oxide layer and method of manufacturing the same
10/28/2004	US20040211749 Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
10/27/2004	EP1471543A2 Magnetoresistive structures and magnetic recording disc drive
10/27/2004	EP1471536A2 Magnetic random access memory cell comprising an oxidation preventing layer and method of manufacturing the same
10/27/2004	CN1541424A Method for mass production of plurality of magnetic sensors
10/26/2004	US6809976 Non-volatile semiconductor memory device conducting read operation using a reference cell
10/26/2004	US6809959 Hybrid semiconductor—magnetic spin based memory with low transmission barrier
10/26/2004	US6809514 Magnetic field sensor including carrier excluding for reducing an instrinsic contribution to carrier concentration in the active region
10/26/2004	US6809361 Magnetic memory unit and magnetic memory array
10/26/2004	US6808740 Magnetoresistance effect film and method of forming same
10/21/2004	US20040209476 Method of fabricating a magneto-resistive random access memory (MRAM) device
10/21/2004	US20040208054 Magnetic random access memory
10/21/2004	US20040208053 High output nonvolatile magnetic memory
10/21/2004	US20040208052 Thin film magnetic memory device capable of conducting stable data read and write operations
10/21/2004	US20040207962 CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element
10/21/2004	US20040207961 MR (magnetoresistance) device and magnetic recording device
10/21/2004	US20040207960 Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path

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