Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
12/2004
12/16/2004US20040253786 Method for forming magnetic tunneling junction layer for magnetic random access memory
12/16/2004US20040253437 Increased damping and/or decreased coercivity; a magnetic random access memory
12/16/2004US20040252590 Thermal-assisted magnetic memory storage device
12/16/2004US20040252570 Magnetic thin-film memory device for quick and stable reading data
12/16/2004US20040252559 Transplanted magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer and method for making the same
12/16/2004US20040252553 Magnetic memory storage device
12/16/2004US20040252551 Magnetic random access memory device
12/16/2004US20040252417 GMR element having pinned magnetic layers at two sides of free magnetic layer in track width direction
12/16/2004US20040252414 Magnetoresistive sensor with reduced operating temperature
12/16/2004US20040251506 Hall effect devices, memory devices, and hall effect device readout voltage increasing methods
12/15/2004EP1487006A1 Device and method for heat treatment
12/15/2004EP1486984A1 Data storage circuit, data write method in the data storage circuit, and data storage device
12/15/2004EP1486983A1 Magnetic storage device using ferromagnetic tunnel junction element
12/15/2004EP1486967A2 Thermal-assisted magnetic memory storage device
12/15/2004EP1486952A2 Magnetic memory storage device
12/15/2004EP1301928B1 Mram architectures for increased write selectivity
12/15/2004CN1180446C Method of manufacturing spin valve structure
12/14/2004US6831857 Magnetic memory
12/14/2004US6831817 Magnetic sensor having adjusted specific resistance distribution of first magnetic layer of free magnetic layer of multi-layered ferri-structure
12/14/2004US6831456 Angle sensor and method of increasing the anisotropic field strength of a sensor unit of an angle sensor
12/14/2004US6831314 Magnetoresistive effect element and magnetic memory device
12/14/2004US6831312 Amorphous alloys for magnetic devices
12/09/2004US20040246788 Magnetoresistive device and magnetic memory device
12/09/2004US20040246777 Magnetic recording element and method of manufacturing magnetic recording element
12/09/2004US20040246634 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus
12/09/2004US20040246631 Spin valve magnetoresistive device with enhanced performance
12/09/2004US20040245553 Magnetoresistive effect element and magnetic memory device
12/09/2004US20040244684 System and method of deposition of magnetic multilayer film, method of evaluation of film deposition, and method of control of film deposition
12/09/2004DE10360969A1 Verfahren zum Trockenätzen eines mehrlagigen Schichtmaterials A method for dry etching of a multilayer coating material
12/09/2004DE102004001023A1 Verfahren zum Isolieren von Speicherelementen in einem Array A method for isolating memory elements in an array
12/08/2004EP1484767A2 Magnetic memory apparatus and method of manufacturing magnetic memory apparatus
12/08/2004EP1484766A1 Magnetic storage unit using ferromagnetic tunnel junction element
12/08/2004EP1484765A1 High density magnetoresistance memory and manufacturing method thereof
12/08/2004EP1484617A2 Thin film magnetic sensor and method of manufacturing the same
12/08/2004EP1483595A2 High resolution scanning magnetic microscope operable at high temperature
12/08/2004CN1553525A Composite Joule treating method for high impedance material
12/08/2004CN1179424C Ferromagnetic tunnel junctions with enhanced magneto-resistance
12/07/2004US6829162 Magnetic memory device and manufacturing method thereof
12/07/2004US6829159 Magnetic device
12/07/2004US6829158 Magnetoresistive level generator and method
12/07/2004US6829157 Method of controlling magnetization easy axis in ferromagnetic films using voltage, ultrahigh-density, low power, nonvolatile magnetic memory using the control method, and method of writing information on the magnetic memory
12/07/2004US6829122 Magnetic head of a magnetoresistance type having an underlying layer having a laminated structure of a tungsten-group metal layer formed on a tantalum-group metal layer
12/07/2004US6828897 Methods and compositions for optimizing interfacial properties of magnetoresistive sensors
12/07/2004US6828785 Magneto-resistive effect element, magnetic sensor using magneto-resistive effect, magnetic head using magneto-resistive effect and magnetic memory
12/07/2004US6828678 Semiconductor topography with a fill material arranged within a plurality of valleys associated with the surface roughness of the metal layer
12/07/2004US6828641 Semiconductor memory device using magneto resistive element and method of manufacturing the same
12/07/2004US6828639 Process flow for building MRAM structures
12/07/2004US6828610 Method for modifying switching field characteristics of magnetic tunnel junctions
12/07/2004US6828260 Ultra-violet treatment of a tunnel barrier layer through an overlayer a tunnel junction device
12/07/2004US6828039 Magnetoresistive sensor and manufacturing method therefor
12/07/2004US6826842 Azimuth meter
12/02/2004US20040240267 High density magnetoresistance memory and manufacturing method thereof
12/02/2004US20040240264 Magnetic memory cell with shape anisotropy
12/02/2004US20040240258 Standard cell arrangement for a magneto-resistive component
12/02/2004US20040240134 Overload current protection device using magnetic impedance element
12/02/2004US20040240125 Synthetic anti-parallel spin valve with thin AFM layer for very high density application
12/02/2004US20040240123 Tunnel magnetoresistance effect device , and a portable personal device
12/02/2004US20040240121 Magnetic recording head and method for manufacturing
12/02/2004US20040239322 Circuit configuration for a gradiometric current sensor and a sensor chip equipped with this circuit configuration
12/02/2004US20040239321 Thin film magnetic sensor and method of manufacturing the same
12/02/2004US20040239320 Thin film magnetic sensor and method of manufacturing the same
12/02/2004US20040239318 High resolution scanning magnetic microscope operable at high temperature
12/01/2004EP1482319A2 Thin film magnetic sensor and method of manufacturing the same
12/01/2004EP1481726A1 The combinatorial hydrothermal synthesis of novel materials
12/01/2004EP1481256A2 Magnetic field sensor
12/01/2004CN1552077A Magnetoresistive level generator
12/01/2004CN1551358A Magnetic random access memory including middle oxide layer made from different methods and method of manufacturing the same
12/01/2004CN1551239A Electric field pulse inductive resistance element and semiconductor using same
12/01/2004CN1551228A MRAM and method for fabricating the same
12/01/2004CN1551227A MRAM having sal layer
12/01/2004CN1551114A Method and apparatus for providing a magnetic tunnel transistor with a self-pinned emitter
12/01/2004CN1551113A Differential CPP GMR head
12/01/2004CN1551111A Magnetoresistive head and magnetic recording-reproducing apparatus
12/01/2004CN1550575A Method of dry-etching a multi-layer film material
11/2004
11/30/2004US6826079 Method and system for performing equipotential sensing across a memory array to eliminate leakage currents
11/30/2004US6826078 Magnetoresistive effect element and magnetic memory having the same
11/30/2004US6826077 Magnetic random access memory with reduced parasitic currents
11/30/2004US6826076 Non-volatile memory device
11/30/2004US6826075 Random access semiconductor memory with reduced signal overcoupling
11/30/2004US6826023 Ferromagnetic tunnel magnetoresistive devices and magnetic head
11/25/2004US20040235202 Magnetoresistive element and method for producing the same, as well as magnetic head, magnetic memory and magnetic recording device using the same
11/25/2004US20040235201 Methos for providing a sub .15 micron magnetic memory structure
11/25/2004US20040234815 Oxide buffer layer for improved magnetic tunnel junctions
11/25/2004US20040233763 Semiconductor memory device using magneto resistive element and method of manufacturing the same
11/25/2004US20040233760 Magnetic random access memory array with coupled soft adjacent magnetic layer
11/25/2004US20040233757 Magnetic memory device, a method for manufacturing a magnetic memory device, and an integrated circuit device including such magnetic memory device
11/25/2004US20040233755 Magnetic memory device and its recording control method
11/25/2004US20040233711 Magnetic memory device
11/25/2004US20040233710 Method and system for data communication on a chip
11/25/2004US20040233708 Asymmetric memory cell
11/25/2004US20040233588 Magnetic sensor, production process of the magnetic sensor and magnetic array suitable for the production process
11/25/2004US20040233585 Layer system having an increased magnetoresistive effect and use of the same
11/25/2004US20040233584 Device with thermoelectric cooling
11/25/2004US20040232536 Semiconductor device comprising magnetic element
11/25/2004US20040231135 Magnetic sensor, production process of the magnetic sensor and magnetic array suitable for the production process
11/24/2004EP1480225A2 Asymmetric memory cell
11/24/2004EP1479435A1 Screening of organometallic materials for catalysis
11/24/2004EP1479166A2 Standard cell arrangement for a magneto-resistive component
11/24/2004EP1478936A1 Magnetoresistive spin-valve sensor and magnetic storage apparatus
11/24/2004CN1550018A Compensation of a bias magnetic field in a storage surface of a magnetoresistive storage cell
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