Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
01/2005
01/13/2005US20050007694 Magnetic field sensor utilizing anomalous hall effect magnetic film
01/13/2005US20050006713 Method for manufacturing magnetic field detecting element
01/13/2005US20050006682 Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier, and methods for forming the same
01/12/2005EP1496518A1 Storage device using resistance varying storage element and reference resistance value decision method for the device
01/12/2005EP1495470A1 Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in mram processing
01/12/2005CN1564336A Preparing high giant magnetic resistance effect nano multiplayer membrane on silicon-based chip by sputtering process and its prepn. method
01/12/2005CN1564335A Magnetic tunnel conjunction element using composite ferromagnetic layer as ferromagnetic electrode
01/12/2005CN1184702C Method of preparing oxide giant magnet resistance film
01/11/2005US6842389 System for and method of four-conductor magnetic random access memory cell and decoding scheme
01/11/2005US6842368 High output nonvolatile magnetic memory
01/11/2005US6842367 Thin film magnetic memory device provided with program element
01/11/2005US6842366 Thin film magnetic memory device executing self-reference type data read
01/11/2005US6842363 Magnetoresistive memory and method for reading a magnetoresistive memory
01/11/2005US6842361 Memory cell, memory circuit block, data writing method and data reading method
01/11/2005US6842316 Magnetic spin valve sensor having an exchange stabilization layer recessed from the active track edge
01/11/2005US6842315 Magnetoresistive effect head and a method of producing the same
01/11/2005US6842314 Magnetoresistive device and method of manufacturing same, and thin-film magnetic head and method of manufacturing same
01/11/2005US6841833 1T1R resistive memory
01/11/2005US6841820 Information storage apparatus and manufacturing method therefor
01/11/2005US6841484 Method of fabricating a magneto-resistive random access memory (MRAM) device
01/11/2005US6841395 Method of forming a barrier layer of a tunneling magnetoresistive sensor
01/11/2005US6841224 Method of patterning magnetic products using chemical reactions
01/06/2005US20050003672 Method and apparatus for smoothing surfaces on an atomic scale
01/06/2005US20050003561 Method for production of MRAM elements
01/06/2005US20050002248 Semiconductor memory device including magneto resistive element and method of fabricating the same
01/06/2005US20050002230 Magnetic memory device and manufacturing method thereof
01/06/2005US20050002229 Magnetic random access memory, and production method therefor
01/06/2005US20050002228 Magnetic device with magnetic tunnel junction, memory array and read/write methods using same
01/06/2005US20050002127 Enhanced spin-valve sensor with engineered overlayer
01/06/2005US20050002126 CPP spin-valve element
01/06/2005US20050000085 Magnetoresistive head and the fabricating method
01/05/2005EP1494295A1 Magnetoresistance effect element and magnetic memory device
01/05/2005EP1493988A2 Magnetoresistive angle sensor
01/05/2005CN1183548C Polyvalent, magnetoresistive write/read memory and method for writing and reading a memory of this type
01/05/2005CN1183546C Method and apparatus for nondestructive reading storage cell of magnetic resistance random access storing unit
01/05/2005CN1183544C Electric current driving device for magnetic-resistance storage
01/04/2005US6839274 Magnetic random access memory
01/04/2005US6839273 Magnetic switching device and magnetic memory using the same
01/04/2005US6839272 Thin film magnetic memory device conducting read operation and write operation in parallel
01/04/2005US6839271 Magnetic memory device
01/04/2005US6839206 Ferromagnetic double tunnel junction element with asymmetric energy band
01/04/2005US6839205 Magneto-resistive device, and magnetic head and head suspension assembly using same
01/04/2005US6838740 Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
12/2004
12/30/2004US20040265636 Iron-ruthenium (fe-ru) alloy antiferromagnetic bonding layer
12/30/2004US20040264240 Protective layers for MRAM devices
12/30/2004US20040264070 Enhanced GMR magnetic head signal through pinned magnetic layer plasma smoothing
12/30/2004US20040264068 Method of manufacturing magneto-resistive device, and magnetic head, head suspension assembly, and magnetic disk apparatus
12/30/2004US20040264066 Thin film magnetic head, head gimbal assembly, and hard disk drive
12/30/2004US20040264064 Electronic device, magnetoresistance effect element; magnetic head, recording/reproducing apparatus, memory element and manufacturing method for electronic device
12/30/2004US20040263157 Angle sensor having low waveform distortion
12/30/2004US20040263148 Current sensor
12/30/2004US20040262654 Magnetoresistive effect element and magnetic memory device
12/30/2004US20040262627 Magnetic device with improved antiferromagnetically coupling film
12/30/2004DE102004004885A1 Verfahren und Vorrichtung für eine Datenkommunikation auf einem Chip Method and apparatus for data communication on a chip
12/29/2004WO2004114428A2 Magnetoresistance effect element and manufacturing method therof
12/29/2004WO2004114427A2 MAGNETIC TUNNEL JUNCTION PATTERNING USING SiC OR SiN
12/29/2004WO2004114415A1 Surface spintronics device
12/29/2004WO2004114409A1 Magnetic random access memory
12/29/2004WO2004114373A2 Stud formation for mram manufacturing
12/29/2004WO2004114334A2 Method of patterning a magnetic memory cell bottom electrode before magnetic stack deposition
12/29/2004WO2004114312A2 Magnetic memory device on low-temperature substrate
12/29/2004EP1492134A2 Magnetic device with improved antiferromagnetically coupling film
12/29/2004EP1492087A2 Magnetic recording disk
12/29/2004EP1490877A2 Synthetic-ferrimagnet sense-layer for high density mram applications
12/29/2004CN1558422A Magnetoresistive random access memory with high selectivity
12/29/2004CN1182552C Magnetoresistive element and the use thereof as storage element in a storage cell array
12/28/2004US6836429 MRAM having two write conductors
12/28/2004US6835665 Etching method of hardly-etched material and semiconductor fabricating method and apparatus using the method
12/28/2004US6835464 Thin film device with perpendicular exchange bias
12/28/2004US6835423 Method of fabricating a magnetic element with insulating veils
12/23/2004WO2004112043A1 Mram cell having frustrated magnetic reservoirs
12/23/2004WO2004079744A3 Magnetic memory cell junction and method for forming a magnetic memory cell junction
12/23/2004WO2003096351A8 Memories and memory circuits
12/23/2004US20040259274 Method of patterning a magnetic memory cell bottom electrode before magnetic stack deposition
12/23/2004US20040258833 Method of patterning magnetic products using chemical reaction
12/23/2004US20040257894 Electric-field-effect magnetoresistive devices and electronic devices using the magnetoresistive devices
12/23/2004US20040257866 Magnetic memory
12/23/2004US20040257863 Magnetic memory, and method for writing the same
12/23/2004US20040257862 Retrieving data stored in a magnetic integrated memory
12/23/2004US20040257849 Method of reading information in a magnetic memory by a reversible resistance change in a magnetic tunnel junction
12/23/2004US20040257721 Magnetic head using magneto-resistive effect and a manufacturing method thereof
12/23/2004US20040257719 Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
12/23/2004US20040257718 Magnetoresistive device including pinned structure
12/23/2004US20040257716 Magnetoresistive sensor having bias magnets with steep endwalls
12/23/2004US20040257714 Magnetic sensor and magnetic head with the magnetic sensor
12/23/2004US20040257192 Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film
12/23/2004US20040257069 Sensor arrangement
12/22/2004EP1489664A1 Tunneling magnetoresistance device, semiconductor junction device, magnetic memory, and semiconductor light-emitting device
12/22/2004EP1489660A1 Magnetic memory device and manufacturing method thereof
12/22/2004EP1488426A1 Method for producing a reference layer and an mram memory cell provided with said type of reference layer
12/22/2004CN1556998A Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same
12/22/2004CN1556997A Magnetic memory with write inhibit selection and the writing method for same
12/22/2004CN1181350C Current detecting device
12/21/2004US6833981 Spin valve magnetic head with three underlayers
12/21/2004US6833598 Spin valve transistor
12/21/2004US6833573 Curvature anisotropy in magnetic bits for a magnetic random access memory
12/21/2004US6833278 Low remanence flux concentrator for MRAM devices
12/16/2004WO2004109820A1 MAGNETIC TUNNEL JUNCTIONS INCORPORATING AMORPHOUS CoNbZr ALLOYS AND NANO-OXIDE LAYERS
12/16/2004WO2004109805A1 Minute magnetic body having annular single magnetic domain structure, manufacturing method thereof, or magnetic recording element using the same
12/16/2004WO2004109725A1 Method of manufacturing a device with a magnetic layer-structure
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