Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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01/13/2005 | US20050007694 Magnetic field sensor utilizing anomalous hall effect magnetic film |
01/13/2005 | US20050006713 Method for manufacturing magnetic field detecting element |
01/13/2005 | US20050006682 Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier, and methods for forming the same |
01/12/2005 | EP1496518A1 Storage device using resistance varying storage element and reference resistance value decision method for the device |
01/12/2005 | EP1495470A1 Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in mram processing |
01/12/2005 | CN1564336A Preparing high giant magnetic resistance effect nano multiplayer membrane on silicon-based chip by sputtering process and its prepn. method |
01/12/2005 | CN1564335A Magnetic tunnel conjunction element using composite ferromagnetic layer as ferromagnetic electrode |
01/12/2005 | CN1184702C Method of preparing oxide giant magnet resistance film |
01/11/2005 | US6842389 System for and method of four-conductor magnetic random access memory cell and decoding scheme |
01/11/2005 | US6842368 High output nonvolatile magnetic memory |
01/11/2005 | US6842367 Thin film magnetic memory device provided with program element |
01/11/2005 | US6842366 Thin film magnetic memory device executing self-reference type data read |
01/11/2005 | US6842363 Magnetoresistive memory and method for reading a magnetoresistive memory |
01/11/2005 | US6842361 Memory cell, memory circuit block, data writing method and data reading method |
01/11/2005 | US6842316 Magnetic spin valve sensor having an exchange stabilization layer recessed from the active track edge |
01/11/2005 | US6842315 Magnetoresistive effect head and a method of producing the same |
01/11/2005 | US6842314 Magnetoresistive device and method of manufacturing same, and thin-film magnetic head and method of manufacturing same |
01/11/2005 | US6841833 1T1R resistive memory |
01/11/2005 | US6841820 Information storage apparatus and manufacturing method therefor |
01/11/2005 | US6841484 Method of fabricating a magneto-resistive random access memory (MRAM) device |
01/11/2005 | US6841395 Method of forming a barrier layer of a tunneling magnetoresistive sensor |
01/11/2005 | US6841224 Method of patterning magnetic products using chemical reactions |
01/06/2005 | US20050003672 Method and apparatus for smoothing surfaces on an atomic scale |
01/06/2005 | US20050003561 Method for production of MRAM elements |
01/06/2005 | US20050002248 Semiconductor memory device including magneto resistive element and method of fabricating the same |
01/06/2005 | US20050002230 Magnetic memory device and manufacturing method thereof |
01/06/2005 | US20050002229 Magnetic random access memory, and production method therefor |
01/06/2005 | US20050002228 Magnetic device with magnetic tunnel junction, memory array and read/write methods using same |
01/06/2005 | US20050002127 Enhanced spin-valve sensor with engineered overlayer |
01/06/2005 | US20050002126 CPP spin-valve element |
01/06/2005 | US20050000085 Magnetoresistive head and the fabricating method |
01/05/2005 | EP1494295A1 Magnetoresistance effect element and magnetic memory device |
01/05/2005 | EP1493988A2 Magnetoresistive angle sensor |
01/05/2005 | CN1183548C Polyvalent, magnetoresistive write/read memory and method for writing and reading a memory of this type |
01/05/2005 | CN1183546C Method and apparatus for nondestructive reading storage cell of magnetic resistance random access storing unit |
01/05/2005 | CN1183544C Electric current driving device for magnetic-resistance storage |
01/04/2005 | US6839274 Magnetic random access memory |
01/04/2005 | US6839273 Magnetic switching device and magnetic memory using the same |
01/04/2005 | US6839272 Thin film magnetic memory device conducting read operation and write operation in parallel |
01/04/2005 | US6839271 Magnetic memory device |
01/04/2005 | US6839206 Ferromagnetic double tunnel junction element with asymmetric energy band |
01/04/2005 | US6839205 Magneto-resistive device, and magnetic head and head suspension assembly using same |
01/04/2005 | US6838740 Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element |
12/30/2004 | US20040265636 Iron-ruthenium (fe-ru) alloy antiferromagnetic bonding layer |
12/30/2004 | US20040264240 Protective layers for MRAM devices |
12/30/2004 | US20040264070 Enhanced GMR magnetic head signal through pinned magnetic layer plasma smoothing |
12/30/2004 | US20040264068 Method of manufacturing magneto-resistive device, and magnetic head, head suspension assembly, and magnetic disk apparatus |
12/30/2004 | US20040264066 Thin film magnetic head, head gimbal assembly, and hard disk drive |
12/30/2004 | US20040264064 Electronic device, magnetoresistance effect element; magnetic head, recording/reproducing apparatus, memory element and manufacturing method for electronic device |
12/30/2004 | US20040263157 Angle sensor having low waveform distortion |
12/30/2004 | US20040263148 Current sensor |
12/30/2004 | US20040262654 Magnetoresistive effect element and magnetic memory device |
12/30/2004 | US20040262627 Magnetic device with improved antiferromagnetically coupling film |
12/30/2004 | DE102004004885A1 Verfahren und Vorrichtung für eine Datenkommunikation auf einem Chip Method and apparatus for data communication on a chip |
12/29/2004 | WO2004114428A2 Magnetoresistance effect element and manufacturing method therof |
12/29/2004 | WO2004114427A2 MAGNETIC TUNNEL JUNCTION PATTERNING USING SiC OR SiN |
12/29/2004 | WO2004114415A1 Surface spintronics device |
12/29/2004 | WO2004114409A1 Magnetic random access memory |
12/29/2004 | WO2004114373A2 Stud formation for mram manufacturing |
12/29/2004 | WO2004114334A2 Method of patterning a magnetic memory cell bottom electrode before magnetic stack deposition |
12/29/2004 | WO2004114312A2 Magnetic memory device on low-temperature substrate |
12/29/2004 | EP1492134A2 Magnetic device with improved antiferromagnetically coupling film |
12/29/2004 | EP1492087A2 Magnetic recording disk |
12/29/2004 | EP1490877A2 Synthetic-ferrimagnet sense-layer for high density mram applications |
12/29/2004 | CN1558422A Magnetoresistive random access memory with high selectivity |
12/29/2004 | CN1182552C Magnetoresistive element and the use thereof as storage element in a storage cell array |
12/28/2004 | US6836429 MRAM having two write conductors |
12/28/2004 | US6835665 Etching method of hardly-etched material and semiconductor fabricating method and apparatus using the method |
12/28/2004 | US6835464 Thin film device with perpendicular exchange bias |
12/28/2004 | US6835423 Method of fabricating a magnetic element with insulating veils |
12/23/2004 | WO2004112043A1 Mram cell having frustrated magnetic reservoirs |
12/23/2004 | WO2004079744A3 Magnetic memory cell junction and method for forming a magnetic memory cell junction |
12/23/2004 | WO2003096351A8 Memories and memory circuits |
12/23/2004 | US20040259274 Method of patterning a magnetic memory cell bottom electrode before magnetic stack deposition |
12/23/2004 | US20040258833 Method of patterning magnetic products using chemical reaction |
12/23/2004 | US20040257894 Electric-field-effect magnetoresistive devices and electronic devices using the magnetoresistive devices |
12/23/2004 | US20040257866 Magnetic memory |
12/23/2004 | US20040257863 Magnetic memory, and method for writing the same |
12/23/2004 | US20040257862 Retrieving data stored in a magnetic integrated memory |
12/23/2004 | US20040257849 Method of reading information in a magnetic memory by a reversible resistance change in a magnetic tunnel junction |
12/23/2004 | US20040257721 Magnetic head using magneto-resistive effect and a manufacturing method thereof |
12/23/2004 | US20040257719 Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof |
12/23/2004 | US20040257718 Magnetoresistive device including pinned structure |
12/23/2004 | US20040257716 Magnetoresistive sensor having bias magnets with steep endwalls |
12/23/2004 | US20040257714 Magnetic sensor and magnetic head with the magnetic sensor |
12/23/2004 | US20040257192 Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film |
12/23/2004 | US20040257069 Sensor arrangement |
12/22/2004 | EP1489664A1 Tunneling magnetoresistance device, semiconductor junction device, magnetic memory, and semiconductor light-emitting device |
12/22/2004 | EP1489660A1 Magnetic memory device and manufacturing method thereof |
12/22/2004 | EP1488426A1 Method for producing a reference layer and an mram memory cell provided with said type of reference layer |
12/22/2004 | CN1556998A Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same |
12/22/2004 | CN1556997A Magnetic memory with write inhibit selection and the writing method for same |
12/22/2004 | CN1181350C Current detecting device |
12/21/2004 | US6833981 Spin valve magnetic head with three underlayers |
12/21/2004 | US6833598 Spin valve transistor |
12/21/2004 | US6833573 Curvature anisotropy in magnetic bits for a magnetic random access memory |
12/21/2004 | US6833278 Low remanence flux concentrator for MRAM devices |
12/16/2004 | WO2004109820A1 MAGNETIC TUNNEL JUNCTIONS INCORPORATING AMORPHOUS CoNbZr ALLOYS AND NANO-OXIDE LAYERS |
12/16/2004 | WO2004109805A1 Minute magnetic body having annular single magnetic domain structure, manufacturing method thereof, or magnetic recording element using the same |
12/16/2004 | WO2004109725A1 Method of manufacturing a device with a magnetic layer-structure |