Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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02/09/2005 | CN1577495A Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus |
02/09/2005 | CN1577312A 非易失性存储器并行处理器 Nonvolatile memory parallel processor |
02/09/2005 | CN1576857A 电流传感器 Current Sensors |
02/08/2005 | US6853599 Magnetic memory device implementing read operation tolerant to bitline clamp voltage (VREF) |
02/08/2005 | US6853580 Magnetoresistive element and MRAM using the same |
02/08/2005 | US6853521 Seed layer is formed with a Cr layer in which the direction of a crystal face is oriented in a different direction from that of an equivalent crystal face in another crystal grain; wettability improved |
02/08/2005 | US6852550 MRAM sense layer area control |
02/08/2005 | CA2173222C Ultra high density, non-volatile ferromagnetic random access memory |
02/03/2005 | WO2005011010A2 Component with a structure element having magnetic properties and method |
02/03/2005 | WO2005010998A1 Self-aligned conductive lines for fet-based magnetic random access memory devices and method of forming the same |
02/03/2005 | US20050026307 Spin injection devices |
02/03/2005 | US20050025999 Low resistance magnetic tunnel junction structure |
02/03/2005 | US20050024950 Readout circuit for semiconductor storage device |
02/03/2005 | US20050024935 Thin film magnetic memory device reducing a charging time of a data line in a data read operation |
02/03/2005 | US20050024930 Magnetic memory device having yoke layer, and manufacturing method thereof |
02/03/2005 | US20050024793 Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film |
02/03/2005 | US20050024791 Ferromagnetic tunnel junciton element exhibiting high magnetoresistivity at finite voltage and tunnel magnetoresistive head provided therewith, magnetic head slider, and magnetic disk drive |
02/03/2005 | US20050023559 Magnetic oxide thin film, magnetic memory element, and method of manufacturing magnetic oxide thin film |
02/03/2005 | DE10345552B3 Integrated sensor arrangement has Hall element with one of 2 axes defined by connectors at approximately 45 degrees to (-1 1 0) direction relative to (1 0 0) orientation of silicon semiconducting body |
02/02/2005 | EP1502264A2 Layout for thermally selected cross-point mram cell |
02/02/2005 | CN1574295A Asymmetric memory cell |
02/02/2005 | CN1574072A Magnetic random access memory device having thermal agitation property and high write efficiency |
02/02/2005 | CN1574068A High density magnetoresistance memory and manufacturing method thereof |
02/02/2005 | CN1573946A Magnetic device with improved antiferromagnetically coupling film |
02/02/2005 | CN1573945A Magnetic recording disk with improved antiferromagnetically coupling film |
02/02/2005 | CN1573939A Magnetoresistive sensor having bias magnets with steep endwalls |
02/02/2005 | CN1573350A Thin film magnetic sensor and method of manufacturing the same |
02/02/2005 | CN1573349A Thin film magnetic sensor and method of manufacturing the same |
02/02/2005 | CN1187824C Semiconductor memory device and its mfg. method |
02/01/2005 | US6850433 Magnetic memory device and method |
02/01/2005 | US6850136 Magnetoresistive based electronic switch |
02/01/2005 | US6849891 RRAM memory cell electrodes |
02/01/2005 | US6849888 Semiconductor memory device, nonvolatile memory device and magnetic memory device provided with memory elements and interconnections |
02/01/2005 | US6849466 Method for manufacturing MTJ cell of magnetic random access memory |
02/01/2005 | US6849465 Method of patterning a magnetic memory cell bottom electrode before magnetic stack deposition |
02/01/2005 | US6849464 Method of fabricating a multilayer dielectric tunnel barrier structure |
02/01/2005 | US6848169 Magnetic tunneling junction and fabrication method thereof |
01/27/2005 | WO2005008799A1 Ccp magnetoresistance element, method for manufacturing same, magnetic head and magnetic storage |
01/27/2005 | WO2004095515A3 Methods for contracting conducting layers overlying magnetoelectronic elements of mram devices |
01/27/2005 | US20050020076 Method for manufacturing MTJ cell of magnetic random access memory |
01/27/2005 | US20050020053 Method and structure for contacting an overlying electrode for a magnetoelectronics element |
01/27/2005 | US20050020011 Magnetic memory device and method of manufacturing the same |
01/27/2005 | US20050019610 Spin tunnel magnetoresistive effect film and element, magnetoresistive sensor using same, magnetic apparatus, and method for manufacturing same |
01/27/2005 | US20050018479 Magnetic storage cell and magnetic memory device using same |
01/27/2005 | US20050018478 Magnetic random access memory device having thermal agitation property and high write efficiency |
01/27/2005 | US20050018476 Magnetoresistive element, magnetic memory cell, and magnetic memory device, and method for manufacturing the same |
01/27/2005 | US20050018367 Thin film magnetic head, head gimbal assembly, and hard disk drive |
01/27/2005 | US20050018366 Magnetoresistive device and thin-film magnetic head |
01/27/2005 | US20050017979 Non-volatile memory parallel processor |
01/27/2005 | US20050017314 Spin valve transistor with self-pinned antiparallel pinned layer structure |
01/27/2005 | US20050016957 Dry etching method for magnetic material |
01/27/2005 | DE102004008218A1 Wiedergewinnen von in einem integrierten Magnetspeicher gespeicherten Daten Retrieving data stored in an integrated magnetic memory data |
01/26/2005 | EP1501020A1 A non-volatile memory parallel processor |
01/26/2005 | EP1500720A1 Dry etching method for magnetic material |
01/26/2005 | EP1500116A1 Method of forming mram devices |
01/26/2005 | EP1500108A2 Semiconductor memory device and operating method for a semiconductor memory device |
01/26/2005 | EP1499905A1 Method and arrangement for protecting a chip and checking its authenticity |
01/26/2005 | EP1438755B1 Vertical hall sensor |
01/26/2005 | EP1307756A4 Low power magnetic anomaly sensor |
01/26/2005 | CN1572001A Magneto-resistive bit structure and method of manufacturing therefor |
01/26/2005 | CN1571582A Mini-acoustical device based on magneto resistor effect |
01/26/2005 | CN1571140A Method of fabricating nano-scale resistance cross-point memory array and device |
01/26/2005 | CN1571066A Method of providing stability of a magnetic memory cell |
01/26/2005 | CN1186799C Shared bit line cross point storage array |
01/26/2005 | CN1186780C Film magnet memory capable of fast and stable reading data |
01/25/2005 | US6847902 Adjustment-circuit embedded semiconductor sensor and torsion bar type torque sensor system |
01/25/2005 | US6847546 High-sensitivity magnetic field sensor |
01/25/2005 | US6847545 Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element |
01/25/2005 | US6847510 Magnetic tunnel junction device with bottom free layer and improved underlayer |
01/25/2005 | US6847508 Spin valve thin film magnetic element and thin film magnetic head |
01/25/2005 | US6846703 Three-dimensional device |
01/20/2005 | WO2005006450A1 Oblique deposition to induce magnetic anisotropy for mram cells |
01/20/2005 | WO2005006338A2 Magnetoelectronics information device having a compound magnetic free layer |
01/20/2005 | US20050014320 Magnetic memory cell having an annular data layer and a soft reference layer |
01/20/2005 | US20050014295 Method of manufacture of a magneto-resistive device |
01/20/2005 | US20050013063 Thin-film magnetic head, head gimbal assembly, and hard disk drive |
01/20/2005 | US20050012176 Electromagnetic device and method of operating the same |
01/20/2005 | US20050012129 Magnetic switching element and a magnetic memory |
01/20/2005 | US20050012127 Via AP switching |
01/20/2005 | DE10327390A1 Appliance preventing electro-migration, consisting of magneto-resistive sensor element and conductive element for measuring of magnetic fields, or connected magnitudes |
01/19/2005 | EP1498919A2 Manufacturing a magnetic cell |
01/19/2005 | EP1498744A2 Magnetic sensor and manufacturing method therefor |
01/19/2005 | EP1417690B1 Layer system having an increased magnetoresistive effect and use of the same |
01/19/2005 | EP1314003B1 Magneto-resistive sensor for scanning a magnetic multipole wheel |
01/19/2005 | CN1185723C Magnetic sensor and method for fabricating same |
01/19/2005 | CN1185711C Semiconductor storage device |
01/19/2005 | CN1185630C Magnetic memory device |
01/18/2005 | US6845036 Magnetic non-volatile memory coil layout architecture and process integration scheme |
01/18/2005 | US6844999 Boron doped CoFe for GMR free layer |
01/18/2005 | US6844998 Magnetoresistive sensor capable of narrowing gap and track width |
01/18/2005 | US6844605 Magnetic memory using perpendicular magnetization film |
01/18/2005 | US6844204 Magnetic random access memory |
01/13/2005 | WO2005004161A2 Integration scheme for avoiding plasma damage in mram technology |
01/13/2005 | US20050009286 Method of fabricating nano-scale resistance cross-point memory array |
01/13/2005 | US20050009211 Tunneling magnetoresistive (TMR) sensor having a barrier layer made of magnesium-oxide (Mg-O) |
01/13/2005 | US20050009210 Magnetic random access memory and method of manufacturing the same |
01/13/2005 | US20050008849 Protective cap layer; reduce cleabibg times |
01/13/2005 | US20050007833 Memory cell strings |
01/13/2005 | US20050007819 Magnetic memory device and method of manufacturing the same |
01/13/2005 | US20050007818 Thin film magnetic memory device including memory cells having a magnetic tunnel junction |