Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
04/2005
04/28/2005WO2005011010A3 Component with a structure element having magnetic properties and method
04/28/2005US20050090119 Magnetic tunnel junction device with dual-damascene conductor and dielectric spacer
04/28/2005US20050090111 Magnetic tunnel junction device with etch stop layer and dielectric spacer
04/28/2005US20050090056 A method of making a magnetic tunnel junction device
04/28/2005US20050088905 Curvature anisotropy in magnetic bits for a magnetic random access memory
04/28/2005US20050088884 Hybrid semiconductor - magnetic spin based memory with low transmission barrier
04/28/2005US20050088788 Magnetoresistive effect element and magnetic memory having the same
04/28/2005US20050088787 Magnetic head and magnetic recording/reproducing device
04/28/2005US20050087827 Thin film magnetic memory device and manufacturing method therefor
04/28/2005US20050087786 Magnetic random access memory
04/28/2005US20050087511 Process for making magnetic memory structures having different-sized memory cell layers
04/28/2005US20050087000 Sensor and method for measuring the areal density of magnetic nanoparticles on a micro-array
04/28/2005US20050086794 Magnetoelectric transducer and its manufacturing method
04/27/2005EP1526588A1 Magnetoresistance effect element and magnetic memory unit
04/27/2005EP1525584A2 Magnetoresistive random access memory with soft magnetic reference layer
04/27/2005CN1610000A Magnetoresistive element, magnetic memory cell, and magnetic memory device
04/27/2005CN1199278C Element using magnetic material and addressing method therefor
04/27/2005CN1199274C Semiconductor storage device
04/27/2005CN1199186C Thin film magnetic storaging apparatus having storing unit with magnetic tunnel joint part
04/27/2005CN1199184C MTJ stack type unit storage detecting method and device
04/26/2005US6885582 Magnetic memory storage device
04/26/2005US6885579 Magnetic random access memory including a cell array having a magneto-resistance element
04/26/2005US6885578 NAND-type magnetoresistive RAM
04/26/2005US6885576 Closed flux magnetic memory
04/26/2005US6885573 Diode for use in MRAM devices and method of manufacture
04/26/2005US6885528 Magnetic sensing element having chromium layer between antiferromagnetic layers
04/26/2005US6885527 Process to manufacture a top spin valve
04/26/2005US6885074 Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
04/26/2005US6885073 Method and apparatus providing MRAM devices with fine tuned offset
04/26/2005US6885049 Spin dependent tunneling junctions including ferromagnetic layers having flattened peaks
04/26/2005US6884731 Method for forming magnetic tunneling junction layer for magnetic random access memory
04/26/2005US6884633 Semiconductor memory device using magneto resistive element and method of manufacturing the same
04/26/2005US6884630 Two-step magnetic tunnel junction stack deposition
04/21/2005WO2005036559A1 Magnetic tunnel junction device and writing/reading method for said device
04/21/2005WO2005036196A1 Integrated sensor arrangement
04/21/2005WO2005004161A3 Integration scheme for avoiding plasma damage in mram technology
04/21/2005WO2004114427A3 MAGNETIC TUNNEL JUNCTION PATTERNING USING SiC OR SiN
04/21/2005US20050084714 Method for fabricating a magnetoresistive film and magnetoresistive film
04/21/2005US20050083770 Thin-film magnetic memory device executing data writing with data write magnetic fields in two directions
04/21/2005US20050083732 MRAM having two write conductors
04/21/2005US20050083728 Soft-reference magnetic memory digitizing device and method of operation
04/21/2005US20050083727 Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element
04/21/2005US20050083612 Method and apparatus for manufacturing a magnetoresistive multilayer film
04/21/2005CA2540608A1 Magnetic tunnel junction device and writing/reading method for said device
04/20/2005EP1524672A2 Magnetic memory device and method of manufacturing magnetic memory device
04/20/2005EP1206763A4 Magnetic sensor
04/20/2005EP1116248B1 Method of manufacturing a magnetic tunnel junction device
04/20/2005CN1608206A Sensor and method for measuring the areal density of magnetic nanoparticles on a micro-array
04/20/2005CN1607607A Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same
04/20/2005CN1607606A Magnetic memory device
04/19/2005US6882564 Magnetic memory device having magnetic circuit and method of manufacture thereof
04/19/2005US6882563 Magnetic memory device and method for manufacturing the same
04/19/2005US6882509 Forming multilayers comprising alloys, iron oxide, nonmagnetic, ferromagnetic, pinning and capping layers on substrates, used as giant magnetoresistance (GMR) detectors; magnetic recording media or disc heads
04/19/2005US6881351 Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
04/14/2005US20050079665 Spin tunnel transistor
04/14/2005US20050079647 Method and system for patterning of magnetic thin films using gaseous transformation
04/14/2005US20050078536 Resistive cross point memory
04/14/2005US20050078511 System and method for storing data in an unpatterned, continuous magnetic layer
04/14/2005US20050078501 Method and arrangement for compensation of a magnetic bias field in a storage layer of a magnetoresistive memory cell
04/14/2005US20050078418 Ferromagnetic double tunnel junction element with asymmetric energy band
04/14/2005US20050078417 Magnetoresistance effect device, method of manufacturing the same, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information reproducing apparatus
04/14/2005US20050077890 Multiplexed dual-purpose magnetoresistive sensor and method of measuring current and temperature
04/14/2005US20050077585 Magnetic field sensing device and method for fabricating thereof
04/14/2005US20050077556 Thermally-assisted magnetic memory structures
04/14/2005US20050077555 Memory
04/14/2005DE19954053B4 Magnetfelddetektorelement, Verfahren zur Herstellung eines Magnetfelddetektorelements und Magnetfelddetektorgerät Magnetic field detector element, method for producing a magnetic field detector and magnetic field detector unit element
04/14/2005DE102004029955A1 Magnetic random access memory device for computer, has grid of bit and word line which is increased by inclusion of multiple diodes that reduce leakage currents circulating through non-selected ones of magnetic memory cells
04/13/2005EP1523011A2 Magnetoresistive element, magnetic memory cell, and magnetic memory device
04/13/2005EP1336179B1 Integrated magnetoresistive semiconductor memory system
04/13/2005CN1606783A Increased magnetic stability devices suitable for use as sub-micron memories
04/13/2005CN1606107A Method and system for patterning of magnetic thin films using gaseous transformation
04/13/2005CN1606094A Magnetoresistive element, magnetic memory cell, and magnetic memory device
04/13/2005CN1606093A Non-volatile memory cell using torque and random access magnetic memory using same
04/13/2005CN1197158C Semiconductor memory device and its manufacture
04/13/2005CN1197084C Magnetic random access memory
04/12/2005US6879515 Magnetic memory device having yoke layer
04/12/2005US6879514 Magnetoresistive element and magnetic memory unit
04/12/2005US6879508 Memory device array having a pair of magnetic bits sharing a common conductor line
04/12/2005US6879475 Magnetoresistive effect element having a ferromagnetic tunneling junction, magnetic memory, and magnetic head
04/12/2005US6879474 Junction stability and yield for spin valve heads
04/12/2005US6879473 Magnetoresistive device and magnetic memory device
04/12/2005US6879472 Exchange coupling film and electoresistive sensor using the same
04/12/2005US6879153 Magnetic sensor
04/12/2005US6879012 Giant planar hall effect in epitaxial ferromagnetic semiconductor devices
04/12/2005US6879011 Magnetically shielded circuit board
04/12/2005US6877222 Method for manufacturing a high frequency electrical connector
04/07/2005US20050074634 Comprising main component of barium calcium titanate and sub-components of magnesium carbonate, rare earth oxide, barium or calcium oxide, manganese, vanadium, chromium oxides, sintering additive of silicon oxide; can be sintered at low temperature; high dielectric constant, excellent thermal stability
04/07/2005US20050073897 Non-volatile memory device
04/07/2005US20050073881 Magnetic memory device including groups of series-connected memory elements
04/07/2005US20050073778 Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlayer having {111}-oriented fcc structure
04/07/2005US20050073016 Asymmetric patterned magnetic memory
04/07/2005US20050072997 Magnetoresistive memory apparatus
04/07/2005US20050072995 Magnetic memory
04/07/2005DE102004022736A1 Vorrichtung und Verfahren zum Erzeugen eines Schreibstroms für eine magnetische Speicherzelle Apparatus and method for generating a write current for a magnetic memory cell
04/07/2005DE102004022573A1 Magnetische Speicherzellenstruktur Magnetic memory cell structure
04/07/2005DE102004020258A1 Verfahren und System zum Lesen von Magnetspeicher A method and system for reading magnetic memory
04/06/2005EP1521269A2 Asymmetric patterned magnetic memory
04/06/2005EP1521244A1 Method for making a read sensor for a magnetic head
04/06/2005CN1605106A Segmented write line architecture
04/06/2005CN1604355A Magneto-resistive effect element, magnetic head and magnetic reproducing device
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