Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
04/2005
04/06/2005CN1604229A Magnetic memory device and method of manufacturing magnetic memory device
04/06/2005CN1604228A Magnetic random memory storing unit with low write-in current characteristic and method for making same
04/06/2005CN1604192A Method of forming a read sensor of a magnetic head
04/06/2005CN1603468A Dry etching method for magnetic material
04/06/2005CN1196132C Memory cell arrangement and operational method therefor
04/06/2005CN1196131C Method for revising defective tunnel node
04/05/2005US6876574 Magnetoresistive device and electronic device
04/05/2005US6876527 Magnetoresistive sensor with antiparallel coupled lead/sensor overlap region
04/05/2005US6876524 Magnetoresistive transducer having stronger longitudinal bias field
04/05/2005US6876523 Magnetic head, and the magnetic read-write devices, and the magnetic memory with magnetic sensors
04/05/2005US6875651 Dual-trench isolated crosspoint memory array and method for fabricating same
03/2005
03/31/2005WO2005029604A1 Multiposition 3-d magnetic field sensor
03/31/2005WO2004114373A3 Stud formation for mram manufacturing
03/31/2005WO2004114334A3 Method of patterning a magnetic memory cell bottom electrode before magnetic stack deposition
03/31/2005US20050070033 Magnetic memory device and method of manufacturing the same
03/31/2005US20050068834 Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same
03/31/2005US20050068830 Magnetic memory device
03/31/2005US20050068825 Magnetic memory device and method of manufacturing magnetic memory device
03/31/2005US20050068698 Magnetoresistance effect element and magnetic head
03/31/2005US20050068695 Magnetoresistive multilayer film
03/31/2005US20050068694 Magnetic sensor having antiferromagnetic layers and free magnetic layer and method for manufacturing magnetic sensor
03/31/2005US20050068690 Magnetoresistance effect element and magnetic head
03/31/2005US20050068689 Magnetoresistance effect element and magnetic head
03/31/2005US20050068688 Magnetoresistance effect element, method of manufacturing same and magnetic head utilizing same
03/31/2005US20050068687 Magnetoresistance effect element, method of manufacturing same and magnetic head utilizing same
03/31/2005US20050067374 Method of forming a read sensor using photoresist structures without undercuts which are removed using chemical-mechanical polishing (CMP) lift-off processes
03/31/2005DE102004022576A1 Verfahren und Vorrichtung zum Koppeln von Leitern in einem Magnetspeicher Method and apparatus for coupling of conductors in a magnetic memory
03/30/2005EP1519417A2 Magnetic random access memory comprising MTJ layer and method of manufacturing
03/30/2005EP1449220B1 Magnetoresistive memory cell comprising a dynamic reference layer
03/29/2005US6873545 Hybrid semiconductor-magnetic device and method of operation
03/29/2005US6873544 Triple sample sensing for magnetic random access memory (MRAM) with series diodes
03/29/2005US6873502 Magnetic tunnel effect type magnetic head, and method of producing same
03/29/2005US6873500 Exchange coupling film capable of improving playback characteristics
03/29/2005US6873233 Combination switch
03/29/2005US6873055 Integrated circuit arrangement with field-shaping electrical conductor
03/29/2005US6872997 Method for manufacture of magneto-resistive bit structure
03/29/2005US6872993 Thin film memory device having local and external magnetic shielding
03/24/2005WO2005013372A3 Spin injection devices
03/24/2005US20050064607 Magnetically shielded circuit board
03/24/2005US20050064157 Magnetic memory and method of operation thereof
03/24/2005US20050063239 Magnetic spin based memory with semiconductor selector
03/24/2005US20050063223 Thermal-assisted switching array configuration for mram
03/24/2005US20050063221 Magnetic storage device, writing method for magnetic storage device and manufacturing method for magnetic storage device
03/24/2005US20050063104 Magnetic recording/reproducing apparatus
03/24/2005US20050062076 Method of manufacturing magnetic memory device, and magnetic memory device
03/23/2005EP1517383A1 Magnetoresistive device and magnetic memory device
03/23/2005CN1599937A Magnetoresistive memory cell comprising a dynamic reference layer
03/23/2005CN1598609A Magnetic sensor and manufacturing method therefor
03/23/2005CN1194353C Method for avoiding unhoped programmed in magnetoresistive memory device
03/23/2005CN1194230C Plane magnetic sensor and plane magnetic sensor using for multidimensional magnetic field analysis
03/23/2005CN1194116C Sputtering target and antiferromagnetic film and magneto-resistance effect element formed by using same
03/22/2005US6870762 Electron spin mechanisms for inducing magnetic-polarization reversal
03/22/2005US6870761 Stacked hybrid semiconductor-magnetic spin based memory
03/22/2005US6870758 Magnetic memory device and methods for making same
03/22/2005US6870718 Magnetoresistive sensor including magnetic domain control layers having high electric resistivity
03/22/2005US6870715 Spin valve magnetoresistive head having a free layer contacted at each end by a ferromagnetic layer of a bias layer
03/22/2005US6870714 Oxide buffer layer for improved magnetic tunnel junctions
03/22/2005US6870713 Magnetoresistive effect thin-film magnetic head
03/17/2005WO2005024968A1 Tunnel junction element
03/17/2005WO2005024856A2 Method and system for providing a magnetic element including passivation structures
03/17/2005WO2004095515B1 Methods for contracting conducting layers overlying magnetoelectronic elements of mram devices
03/17/2005WO2003096351A3 Memories and memory circuits
03/17/2005US20050059170 Magnetic random access memory designs with patterned and stabilized magnetic shields
03/17/2005US20050057992 Magnetoresistance effect element, method of manufacture thereof, magnetic storage and method of manufacture thereof
03/17/2005US20050057960 Magneto-resistive effect element and magnetic memory
03/17/2005US20050057862 Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus
03/17/2005US20050056949 Discrete semiconductor component
03/16/2005EP1514314A1 Variable magnetoresistance device
03/16/2005EP1514274A1 Memory storage device with heating element
03/16/2005EP1514126A1 Sensor and method for measuring a current of charged particles
03/16/2005EP1419506B1 Control device for reversing the direction of magnetisation without an external magnetic field
03/16/2005CN1595676A Magnetoresistance effect element, magnetic head, magnetic suspension assembly, and magnetic reproducing apparatus
03/16/2005CN1193374C 磁存储装置与磁基片 A magnetic storage device and the magnetic substrate
03/15/2005US6868004 Thin film magnetic memory device suppressing resistance of transistors present in current path
03/15/2005US6868003 Magnetic random access memory
03/15/2005US6868002 Magnetic memory with reduced write current
03/15/2005US6867952 Magnetic sensing element with ESD resistance improved by adjusting the lengths of antiferromagnetic layers and free layer in the height direction
03/10/2005WO2005022653A2 Magnetoresistive random access memory with reduced switching field variation
03/10/2005WO2005022622A1 Dry etching process and method for manufacturing magnetic memory device
03/10/2005US20050054120 Magnetic sensor and manufacturing method therefor
03/10/2005US20050052938 Magnetic memory device and method of manufacturing the same
03/10/2005US20050052929 Thin film magnetic memory device suppressing internal magnetic noises
03/10/2005US20050052905 Magnetic memory cell structure
03/10/2005US20050052900 Magnetic device
03/10/2005US20050052899 Magnetoresistive element, magnetic memory cell, and magnetic memory device
03/10/2005US20050052793 Magnetoresistive spin-valve sensor and magnetic storage apparatus
03/10/2005US20050052790 Ferromagnetic tunnel magnetoresistive devices and magnetic head
03/10/2005US20050052788 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
03/10/2005US20050052787 Magnetoresistance effect element, magnetic head, head suspension assembly, and magnetic reproducing apparatus
03/10/2005US20050051820 Fabrication process for a magnetic tunnel junction device
03/10/2005US20050051818 Integrated circuit structure formed by damascene process
03/09/2005EP1513167A2 Magnetoresistance effect film, magnetoresistance effect head and solid state memory
03/09/2005EP1513158A1 Magnetoresistive element, magnetic memory cell, and magnetic memory device
03/09/2005CN1591676A Magnetic film, method and mechanism of magnetization inversion of magnetic film, and magnetic random access memory
03/09/2005CN1591675A Magnetic dual element with dual magnetic states and fabricating method thereof
03/09/2005CN1591674A Magnetoresistive element, magnetic memory cell, and magnetic memory device
03/09/2005CN1591673A Magnetic tunnel junction and memory device including the same
03/09/2005CN1591581A Magnetic recording/reproducing apparatus
03/09/2005CN1591580A Magnetoresistance effect film, magnetoresistance effect head and solid state memory
03/09/2005CN1590580A Antiferromagnetic film and magneto-resistance effect element formed by using the same
1 ... 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 ... 121