Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
05/2005
05/26/2005US20050111142 Electromagnetic transducer element capable of suppressing rise in temperature of electromagnetic transducer film
05/26/2005US20050110117 3d rram
05/26/2005US20050110004 Magnetic tunnel junction with improved tunneling magneto-resistance
05/26/2005US20050109126 Adjustment-circuit embedded semiconductor sensor and torsion bar type torque sensor system
05/25/2005EP1533846A1 Large-capacity magnetic memory using carbon nano-tube
05/25/2005EP1533815A2 3d rram
05/25/2005DE102004024377A1 Wärmeunterstützte Schaltarraykonfiguration für MRAM Heat-assisted switching array configuration for MRAM
05/25/2005CN1620716A A method of improving surface planarity prior to MRAM bit material deposition
05/25/2005CN1620697A MRAM without isolation devices
05/25/2005CN1203561C Magnetoresistance element, its manufacturing method and forming method for compound ferromagnet film
05/25/2005CN1203560C Magnetic memory element, magnetic memory and method for mfg magnetic memory
05/24/2005US6898115 Magnetoresistive element, and magnetic memory using the same
05/24/2005US6898114 Memory device capable of stable data writing
05/24/2005US6897649 Magnetic field detection circuit using magnetic impedance device
05/24/2005US6897532 Magnetic tunneling junction configuration and a method for making the same
05/24/2005US6897101 Method for writing to the magnetoresistive memory cells of an integrated magnetoresistive semiconductor memory
05/24/2005US6896974 Magnetic field sensor and magnetic disk apparatus
05/24/2005US6895658 Includes a free layer formed on a lower gap layer, a tunnel barrier layer formed on the free layer, and a pinned layer formed on the tunnel barrier layer
05/19/2005US20050106810 Stress assisted current driven switching for magnetic memory applications
05/19/2005US20050105375 Magnetic random access memory
05/19/2005US20050105355 Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device
05/19/2005US20050105347 Magnetic storage unit using ferromagnetic tunnel junction element
05/19/2005US20050105325 Magnetic cell and magnetic memory
05/19/2005US20050105222 Magnetoresistive head
05/19/2005US20050105221 Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head
05/19/2005US20050104146 Thin film device and a method of providing thermal assistance therein
05/19/2005US20050104102 Magnetic storage device comprising memory cells including magneto-resistive elements
05/19/2005US20050104101 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
05/19/2005DE102004043855A1 Verfahren zur Herstellung einer Magnet-Tunnel-Junction-Vorrichtung A method of manufacturing a magnetic tunnel junction device
05/19/2005DE102004033113A1 Magnetspeichervorrichtung A magnetic memory device
05/18/2005EP1531481A2 Magnetic tunneling junction cell having free magnetic layer with low magnetic moment and magnetic random access memory having the same
05/18/2005CN1617258A Magnetic tunneling junction cell and magnetic random access memory
05/18/2005CN1617257A Magnetic random access storage
05/18/2005CN1617230A Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device
05/18/2005CN1617229A Dry and wet combined etching method for multilayer film
05/17/2005US6894923 Magnetic memory device
05/17/2005US6894922 Memory device capable of performing high speed reading while realizing redundancy replacement
05/17/2005US6894921 Standard cell arrangement for a magneto-resistive component
05/17/2005US6894920 Magnetic random access memory (MRAM) for spontaneous hall effect and method of writing and reading data using the MRAM
05/17/2005US6894919 Magnetic random access memory
05/17/2005US6894918 Shared volatile and non-volatile memory
05/17/2005US6893946 Method for manufacturing semiconductor thin film, and magnetoelectric conversion element provided with semiconductor thin film thereby manufactured
05/17/2005US6893893 Method of preventing short circuits in magnetic film stacks
05/17/2005US6893802 Masking; peelable film; undercutting
05/17/2005US6893741 Ruthenium and iron alloy; doubling exchange coupling; hexa-gonal close packed crystalline structure compatible with cobalt alloy ferromagnetic layers
05/17/2005US6893740 CPP type magnetoresistive sensor including pinned magnetic layer provided with hard magnetic region
05/12/2005US20050102720 Magnetic tunnel junction device with etch stop layer and dual-damascene conductor
05/12/2005US20050101035 Method for constructing a magneto-resistive element
05/12/2005US20050099865 Magnetoresistive element, magnetic memory cell, and magnetic memory device
05/12/2005US20050099844 Magnetic non-volatile memory coil layout architecture and process integration scheme
05/12/2005US20050099740 Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device
05/12/2005US20050099739 Narrow track CPP head with bias cancellation
05/12/2005US20050099724 Magnetic device and magnetic memory
05/12/2005US20050098809 Antiferromagnetic stabilized storage layers in GMRAM storage devices
05/12/2005US20050098807 Bias-adjusted giant magnetoresistive (GMR) devices for magnetic random access memory (MRAM) applications
05/12/2005US20050097725 Method for fabricating giant magnetoresistive (GMR) devices
05/11/2005EP1529290A2 Memories and memory circuits
05/11/2005CN1615551A Compound semiconductor multilayer structure, hall device, and hall device manufacturing method
05/11/2005CN1614714A Double-magnetic tunnel junction with high magnetic resistance effect and preparing method thereof
05/11/2005CN1201333C Integrated storage with storage unit having magnetic-resistance storage effect and its operation method
05/10/2005US6891746 Magneto-resistive device having soft reference layer
05/10/2005US6891703 Exchange coupled film having magnetic layer with non-uniform composition and magnetic sensing element including the same
05/10/2005US6891368 Magnetoresistive sensor device
05/10/2005US6891366 Magneto-resistive device with a magnetic multilayer structure
05/10/2005US6891241 Single transistor type magnetic random access memory device and method of operating and manufacturing the same
05/10/2005US6891212 Magnetic memory device having soft reference layer
05/05/2005US20050094470 Magnetic device using ferromagnetic film, magnetic recording medium using ferromagnetic film, and device using ferroelectric film
05/05/2005US20050094458 Increased magnetic memory array sizes and operating margins
05/05/2005US20050094456 Heating MRAM cells to ease state switching
05/05/2005US20050094449 Thin-film magnetic memory device executing data writing with data write magnetic fields in two directions
05/05/2005US20050094436 High output nonvolatile magnetic memory
05/05/2005US20050094435 Increased magnetic stability devices suitable for use as sub-micron memories
05/05/2005US20050094326 Integrated spin valve head
05/05/2005US20050094325 Integrated spin valve head
05/05/2005US20050094324 Integrated spin valve head
05/05/2005US20050094323 Integrated spin valve head
05/05/2005US20050094321 Integrated spin valve head
05/05/2005US20050094317 Magnetoresistance effect element, magnetic head, head suspension assembly, magnetic reproducing apparatus, magnetoresistance effect element manufacturing method, and magnetoresistance effect element manufacturing apparatus
05/05/2005US20050093039 Techniques for coupling in semiconductor devices
05/04/2005EP1528569A2 Magnetoresistive element, magnetic memory cell, and magnetic memory device
05/04/2005EP1527455A2 Magnetoresistive random access memory with reduced switching field
05/04/2005EP1527352A1 Gmr sensor element and use thereof
05/04/2005EP1527351A1 Magnetoresistive layer system and sensor element comprising said layer system
05/04/2005EP1527324A2 Magnetoresistive sensor
05/04/2005CN1613117A Asymmetric MRAM cell and bit design for improving bit yield
05/04/2005CN1613116A Mram configuration having selection transistors with a large channel width
05/04/2005CN1613110A Non-magnetic metallic layer in a reader gap of a disc drive
05/04/2005CN1612263A Heating MRAM cells to ease state switching
05/04/2005CN1612262A System and method for storing data in an unpatterned, continuous magnetic layer
05/04/2005CN1612221A Magnetoresistance effect element and manufacturing method and apparatus thereof, and magnetic reproducing apparatus
05/04/2005CN1612220A Magnetic head and magnetic recording/reproducing device
05/04/2005CN1200468C Fe-C film material with room temperature positive giant magnetoresistive effect and prepared via PLD process
05/04/2005CN1200430C MRAM with integrated semiconductor device
05/04/2005CN1200284C Sensing device for measuring external magnetic-field direction using magneto-resistance effect sensing device
05/03/2005US6888746 Magnetoelectronic memory element with inductively coupled write wires
05/03/2005US6888707 Spin filter bottom spin valve head with continuous spacer exchange bias
05/03/2005US6888703 Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads
05/03/2005US6887719 Magnetoresistive random access memory (MRAM) cell patterning
05/03/2005US6887717 Magnetoresistive device and method for producing the same, and magnetic component
05/03/2005US6887513 Coating perovskite oxides on single crystal structured substrates, then oxidizing in oxygen or air to from metal oxide layers for use in magnetic heads or detectors
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