Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
06/2005
06/23/2005DE102004039978A1 Magnetic tunnel junction device for magnetic RAM cell, has free magnetic layer with lamination of ferromagnetic layers, where magnetic spins of layer are rotated by magnetic flux Heasy in minimal overlap regions
06/22/2005EP1544874A1 Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics
06/22/2005EP1543566A2 Thermally stable magnetic element utilizing spin transfer and an mram device using the magnetic element
06/22/2005CN1630921A Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device
06/22/2005CN1207719C MRAM memory unit
06/22/2005CN1207718C Thin film magnet storage device capable of easily controlling data writing current
06/22/2005CN1207717C Magnetic resistance memory module device
06/22/2005CN1207716C Arbitrary selective access semiconductor memory having reduced signal overcoupling
06/21/2005US6909628 High density magnetic RAM and array architecture using a one transistor, one diode, and one MTJ cell
06/21/2005US6909584 Magnetic tunnel effect type magnetic head having a magnetic tunnel junction element sandwiched with conductive gap layers between a pair of magnetic shielding layers
06/21/2005US6909569 Low impedance semiconductor integrated circuit
06/21/2005US6909130 Magnetic random access memory device having high-heat disturbance resistance and high write efficiency
06/21/2005US6909129 Magnetic random access memory
06/21/2005US6907655 Method for manufacturing a spin valve having an enhanced free layer
06/21/2005US6907654 Method of manufacturing spin valve film
06/16/2005US20050130374 Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
06/16/2005US20050128860 Thin film magnetic memory device including memory cells having a magnetic tunnel junction
06/16/2005US20050128842 Annular magnetic nanostructures
06/16/2005US20050128835 Semiconductor device which is low in power and high in speed and is highly integrated
06/16/2005US20050128802 Magnetic memory device and method for production thereof
06/16/2005US20050128800 Thin film magnetic memory device conducting read operation by a self-reference method
06/16/2005US20050128794 Method and apparatus for a high density magnetic random access memory (mram) with stackable architecture
06/16/2005US20050128650 Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance
06/16/2005US20050127903 Magnetic position sensor apparatus and method
06/16/2005US20050127418 Low magnetization materials for high performance magnetic memory devices
06/16/2005US20050127416 MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture
06/15/2005EP1542284A1 Magnetic non-volatile memory element
06/15/2005EP1542277A2 Electrodes for RRAM memory cells
06/15/2005EP1542276A2 Memory cell with a layer having colossal magnetoresistance and an asymmetric area
06/15/2005EP1542236A2 Apparatus and method of analyzing magnetic random access memory
06/15/2005EP1540748A1 Magnetic field sensor comprising a hall element
06/15/2005EP1540362A1 Magnetic sensing device
06/15/2005CN1206656C Magnetic random access memory
06/15/2005CN1206541C Fluxgate sensor integrated in printed circuit board and manufacturing method thereof
06/14/2005US6906950 Magneto-resistive memory cell with shape anistropy and memory device thereof
06/14/2005US6906949 Magnetic element and magnetic element array
06/14/2005US6906948 Magnetic random access memory
06/14/2005US6906898 Differential detection read sensor, thin film head for perpendicular magnetic recording and perpendicular magnetic recording apparatus
06/14/2005US6906368 Magnetic recording medium and magnetic memory apparatus
06/14/2005US6905888 Magnetic memory element having controlled nucleation site in data layer
06/14/2005US6905780 Current-perpendicular-to-plane-type magnetoresistive device, and magnetic head and magnetic recording-reproducing apparatus using the same
06/14/2005US6904669 Magnetic sensor and method of producing the same
06/09/2005WO2005022653A3 Magnetoresistive random access memory with reduced switching field variation
06/09/2005US20050124136 Method for mass production of a plurality of magnetic sensors
06/09/2005US20050124112 Asymmetric-area memory cell
06/09/2005US20050122816 Storage device using resistance varying storage element and reference resistance value decision method for the device
06/09/2005US20050122773 Self-aligned, low-ressistance, efficient memory array
06/09/2005US20050122767 Memory device
06/09/2005US20050121809 Information storage apparatus and electronic device in which information storage apparatus is installed
06/08/2005CN2704174Y Micro acoustic device based on magneto resistance effect
06/07/2005US6903966 Semiconductor device
06/07/2005US6903963 Thin-film magnetic memory device executing data writing with data write magnetic fields in two directions
06/07/2005US6903909 Magnetoresistive element including ferromagnetic sublayer having smoothed surface
06/07/2005US6903908 Magnetoresistive effect sensor with barrier layer smoothed by composition of lower shield layer
06/07/2005US6903907 Magnetic sensing element having specular layer
06/07/2005US6903429 Magnetic sensor integrated with CMOS
06/07/2005US6903403 Exemplary memory cell in exemplary memory array includes ferromagnetic annular data layer having an opening enabling second conductor to electrically contact first conductor, an intermediate layer, a soft reference layer
06/07/2005US6903400 Magnetoresistive memory apparatus
06/07/2005US6903399 Antiferromagnetically stabilized pseudo spin valve for memory applications
06/07/2005US6903396 Control of MTJ tunnel area
06/07/2005US6902940 Method for manufacture of MRAM memory elements
06/07/2005US6901652 Comprises ferromagnetic layer and second antiferromagnetic layer deposited on nonmagnetic layer; for use in hard disks
06/02/2005WO2005050661A1 Antiferromagnetic stabilized storage layers in gmram storage devices
06/02/2005WO2005050653A2 Stress assisted current driven switching for magnetic memory applications
06/02/2005WO2005050628A1 Method for fabricating giant magnetoresistive (gmr) devices
06/02/2005WO2005013385A3 Method for manufacturing magnetic field detection devices and devices threfrom
06/02/2005US20050118458 forming multilayers of dielectric spacers and cobalt iron-based ferromagnetic alloys, having improved perfomances, for use in electronics
06/02/2005US20050117393 Thin film magnetic memory device provided with program element
06/02/2005US20050117392 Magnetic nonvolatile memory cell and magnetic random access memory using the same
06/02/2005US20050117391 Magnetic random access memory
06/02/2005US20050117386 Magnetoresistive element, magnetic memory cell, and magnetic memory device
06/02/2005US20050116308 Magnetoresistive memory cell with dynamic reference layer
06/02/2005US20050116307 Method and arrangement for protecting a chip and checking its authenticity
06/02/2005US20050116255 Magnetic memory device
06/02/2005US20050115822 Sputtering cathode and device and method for coating a substrate with several layers
06/02/2005DE102004033743A1 Eine Dünnfilmvorrichtung und ein Verfahren zum Bereitstellen einer thermischen Unterstützung in derselben A thin film device and a method for providing a thermal support in the same
06/02/2005DE102004031139A1 Verfahren zum Herstellen magnetischer Speicherstrukturen, die Speicherzellschichten mit unterschiedlicher Größe aufweisen Have method for producing magnetic memory structures, the memory cell layers with different size
06/02/2005DE102004030589A1 Magnetic memory cell e.g. magnetic random access memory has spacer layer provided between data layer and superparamagnetic layer having magnetic energy less than magnetic energy of data layer
06/02/2005DE102004030587A1 Thermisch gestützte magnetische Speicherstrukturen Thermally assisted magnetic memory structures
06/02/2005DE102004030544A1 Weichreferenz-Magnetspeicher-Digitalisiervorrichtung und Betriebsverfahren Soft reference magnetic memory digitizing device and method of operation
06/01/2005CN1623204A Memory storage device with heating element
06/01/2005CN1623100A Magnetoresistive layer system and sensor element comprising said layer system
06/01/2005CN1622221A Apparatus and method of analyzing magnetic random access memory
06/01/2005CN1204411C Magnetoresistive angle sensor having several sensing elements
05/2005
05/31/2005US6901025 Nonvolatile semiconductor memory device which can be programmed at high transfer speed
05/31/2005US6901005 Method and system reading magnetic memory
05/31/2005US6900713 Magnetic switch capable of instantaneous switching of an output signal and magnetic sensor
05/31/2005US6900491 Magnetic memory
05/31/2005US6900490 Magnetic random access memory
05/31/2005US6900489 Reducing the effects of néel coupling in MRAM structures
05/31/2005US6900455 Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication
05/26/2005WO2005048244A1 Bias-adjusted giant magnetoresistive (gmr) devices for magnetic random access memory (mram) applications
05/26/2005WO2004093086A3 Magnetically lined conductors
05/26/2005US20050112902 Method to make small isolated features with pseudo-planarization for TMR and MRAM applications
05/26/2005US20050111254 Magnetic memory device and methods for making same
05/26/2005US20050111253 Apparatus and method of analyzing a magnetic random access memory
05/26/2005US20050111148 Method of increasing CPP GMR in a spin valve structure
05/26/2005US20050111147 Method for forming a compound magnetic thin film
05/26/2005US20050111145 Magnetoresistive effect element, magnetic head, and magnetic reproducing apparatus
05/26/2005US20050111144 Magneto-resistive element and device being provided with magneto-resistive element having magnetic nano-contact
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