| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 08/11/1998 | US5792510 Forming metal alloy film on substrate, forming transition metal film thereon, heating, exposing to hydrogen gas which is absorbed by metal film, cooling to transfer hydrogen into alloy film, heating to desorb |
| 08/06/1998 | WO1998034231A1 Mram with aligned magnetic vectors |
| 08/05/1998 | CN1189675A Magnetoresistive device and magnetoresistive head |
| 08/04/1998 | US5789069 Alloy of nickel, iron, and cobalt |
| 07/21/1998 | US5784226 Magnetoresistive head with optimized soft magnetic bias layer |
| 07/21/1998 | US5783981 Magnetic reinitialization of thin film magnetoresistive reproducing heads at the suspension level of media drive manufacturing |
| 07/21/1998 | US5783284 Magnetic multilayer film, magnetoresistance element, and method for preparing magnetoresistance element |
| 07/14/1998 | US5781005 For detecting the presence of passing ferromagnetic articles |
| 07/14/1998 | US5780176 Magnetoresistance effect element |
| 07/07/1998 | US5777542 For use with a reproducing head of a magnetic disk drive(hard disk drive) |
| 07/07/1998 | US5776359 Giant magnetoresistive cobalt oxide compounds |
| 06/30/1998 | US5774309 Magnetic transducer and thin film magnetic head |
| 06/30/1998 | US5773156 Iron, cobalt or nickel magnetic particles dispersed in semiconductor matrix |
| 06/23/1998 | US5770942 Magnetic detector employing magnetic resistance elements for detecting charges in a magnetic field |
| 06/18/1998 | WO1998010302A3 Method for reducing the offset voltage of a hall device |
| 06/18/1998 | DE19651521A1 Magnetostrictive layered system, e.g. for contact=less position detection |
| 06/16/1998 | US5768180 Magnetoresistive memory using large fractions of memory cell films for data storage |
| 06/11/1998 | WO1998025263A1 Lateral magneto-electronic device exploiting a quasi-two-dimensional electron gas |
| 06/11/1998 | WO1998024944A1 Multilayered material, process and device for producing a multilayered material |
| 06/09/1998 | US5764567 Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response |
| 06/09/1998 | US5764056 Nickel-manganese as a pinning layer in spin valve/GMR magnetic sensors |
| 06/04/1998 | WO1998024163A2 Multiple magnetic tunnel structures |
| 06/04/1998 | CA2270896A1 Multiple magnetic tunnel structures |
| 06/03/1998 | EP0845820A2 Magnetoresistive device and magnetoresistive head |
| 06/02/1998 | US5759434 Mixed metal oxide with perovskite structure, very sensitive to small changes in magnetic field |
| 05/28/1998 | WO1998022939A1 Magnetic head having an integrated circuit and method of manufacturing same |
| 05/28/1998 | WO1998022636A1 Sputtering target and antiferromagnetic film and magneto-resistance effect element formed by using the same |
| 05/27/1998 | EP0844679A1 Magneto-resistance effect element, magneto-resistance effect type head, memory element, and method for manufacturing them |
| 05/27/1998 | CN1182964A Structure and fabrication process of inductors on semiconductor chip |
| 05/26/1998 | US5757695 Mram with aligned magnetic vectors |
| 05/26/1998 | US5757056 Multiple magnetic tunnel structures |
| 05/26/1998 | US5756366 Magnetic hardening of bit edges of magnetoresistive RAM |
| 05/26/1998 | US5756191 Exchange coupling film and magnetoresistance effect element |
| 05/20/1998 | EP0843368A2 Magnetoresistive film |
| 05/20/1998 | CN1182262A Magnetoresistance effect element |
| 05/14/1998 | WO1998020496A1 Spin dependent tunneling memory |
| 05/14/1998 | CA2269539A1 Spin dependent tunneling memory |
| 05/06/1998 | EP0840334A1 Antiferromagnetic exchange biasing using buffer layer |
| 05/06/1998 | CN1181055A The combinatorial Synthesis of novel materials |
| 05/05/1998 | US5747997 Spin-valve magnetoresistance sensor having minimal hysteresis problems |
| 05/05/1998 | US5747859 Magnetic device and magnetic sensor using the same |
| 05/05/1998 | US5747198 Multilayer element with phenol resin on substrate with naphthoquinonediazide for positive resist and a negative working agent |
| 05/05/1998 | CA2060561C Magnetoresistive sensor based on oscillations in the magnetoresistance |
| 04/30/1998 | WO1998007165A3 Magnetic current sensor |
| 04/29/1998 | EP0838690A1 Method of manufacturing a magnetoresistive magnetic sensor and transducer obtained |
| 04/23/1998 | DE19744050A1 Magnetic sensor, e.g. for angular position determination |
| 04/21/1998 | US5742458 Cobalt, nickel-iron alloy |
| 04/21/1998 | US5742162 Magnetic sensing structure |
| 04/14/1998 | US5738946 Applied to a high sensitivity magnetic head |
| 04/14/1998 | US5738938 Stable multilayer comprising one rare earth-transition metal alloy layer; heat resistance |
| 04/14/1998 | US5738929 Increasing the contact surface between a ferromagnetic layer and a non-magnetic metal film by a textured surface |
| 04/09/1998 | WO1998014793A1 Magnetic-field sensitive thin film sensor with a tunnel effect barrier layer |
| 04/09/1998 | WO1997046892A3 Magnetoresistance sensor having minimal hysteresis problems |
| 04/07/1998 | US5737155 Read sensitivity MR head using permanent magnet longitudinal stabilization |
| 04/07/1998 | US5736921 Magnetoresistive element |
| 04/07/1998 | US5736236 Magnetic multilayer film and magnetoresistance element |
| 04/07/1998 | US5736060 Read sensitivity MR head using permanent magnet longitudinal stabilization |
| 04/02/1998 | DE19724688A1 Spinvalve magnetoresistance head for magnetic disc drive |
| 04/01/1998 | CN1177795A Reluctance head of self-rotary valve, mfg. method therefor and magnetic recording/reproducing device |
| 03/26/1998 | WO1998012758A1 Magneto-resistance effect device |
| 03/26/1998 | DE19639407A1 Magnetic anisotropy generation method, e.g. for current and magnetic field sensors |
| 03/25/1998 | EP0831541A2 Ferromagnetic tunnel junction, magnetoresistive element and magnetic head |
| 03/24/1998 | US5732016 Memory cell structure in a magnetic random access memory and a method for fabricating thereof |
| 03/18/1998 | EP0829732A2 Magnetic field sensor |
| 03/18/1998 | EP0829018A1 Magnetizing arrangement for a magneto-resistive thin-film sensor element with a bias layer part |
| 03/18/1998 | EP0789671A4 The combinatorial synthesis of novel materials |
| 03/17/1998 | US5729410 Magnetic tunnel junction device with longitudinal biasing |
| 03/17/1998 | US5728481 Spin interaction device |
| 03/12/1998 | WO1998010423A1 Giant magnetoresistive effect memory cell |
| 03/12/1998 | WO1998010302A2 Method for reducing the offset voltage of a hall device |
| 03/12/1998 | DE19737128A1 Magnetoresistive component for magnetic sensor |
| 03/10/1998 | US5726837 Multilayer magnetoresistance effect-type magnetic head |
| 03/10/1998 | US5725997 Method for preparing a resist pattern of t-shaped cross section |
| 03/10/1998 | US5725963 Film with a spin valve |
| 03/05/1998 | DE19737800A1 Indium antimonide layer production for magnetic sensors |
| 03/04/1998 | EP0827221A2 Methods and compositions for optimizing interfacial properties of magnetoresistive sensors |
| 03/04/1998 | EP0827220A2 Methods and compositions for optimizing interfacial properties of transducers used in data storage devices |
| 03/04/1998 | EP0826975A2 Bias-free symmetric dual spin valve giant magnetoresistance transducer |
| 03/03/1998 | US5723978 Photo-inducible magnetic exchange coupling device |
| 02/26/1998 | DE19726852A1 Stacked memory cells magnetic RAM |
| 02/26/1998 | DE19633362A1 Layer structure with magnetic anisotropic layer portion e.g. for position detector |
| 02/24/1998 | US5721078 Photoresists tetragon shapes with incline, spacing containing phenolic resin blends including a naphthoquinone diazides and a negative working agent |
| 02/19/1998 | WO1998007165A2 Magnetic current sensor |
| 02/19/1998 | CA2261312A1 Magnetic current sensor |
| 02/17/1998 | US5719494 Sensor assembly |
| 02/10/1998 | US5717630 Magnetic memory device |
| 02/10/1998 | US5717550 Magnetic recording heads comprising magnetoresistant layer |
| 02/10/1998 | US5716719 A multilayer stack of magnetic and nonmagnetic layers, the magnetic layers are distorted such that a uniaxial easy axis of magnetization is formed within a plane |
| 02/04/1998 | EP0822541A2 Self-biasing, non-magnetic, giant magnetoresistance sensor |
| 02/03/1998 | US5715121 Magnetoresistance element, magnetoresistive head and magnetoresistive memory |
| 01/28/1998 | CN1171606A Magnetoresistive film |
| 01/15/1998 | WO1998001764A1 Thin-layered magnetic field sensor |
| 01/15/1998 | WO1998001762A2 A magnetic field sensor and a method of manufacturing such a sensor |
| 01/13/1998 | US5708407 For measuring the current flowing through an electric conductor |
| 01/08/1998 | DE19726077A1 Memory cell structure for MRAM |
| 01/06/1998 | US5705973 Bias-free symmetric dual spin valve giant magnetoresistance transducer |
| 12/30/1997 | US5703805 Method for detecting information stored in a MRAM cell having two magnetic layers in different thicknesses |
| 12/30/1997 | US5702834 Magneto-resistance effect element |
| 12/30/1997 | US5702832 Magnetoresistance effect element |
| 12/30/1997 | US5702831 Multilayer read only memory; high density, magnetoresistance |