| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 05/11/2000 | WO2000026953A1 Thin film forming method, and semiconductor light emitting device manufacturing method |
| 05/10/2000 | EP0998755A1 Method for producing a ii-vi semi-conducting component |
| 05/10/2000 | CN1252895A Recovery of surface-ready silicon carbide substrate |
| 05/09/2000 | US6061160 Component device for optical communication |
| 05/09/2000 | US6060730 Semiconductor light emitting device |
| 05/09/2000 | US6060729 Light-emitting device |
| 05/09/2000 | US6060727 Light emitting semiconductor device |
| 05/09/2000 | US6060335 Semiconductor light emitting device and method of manufacturing the same |
| 05/04/2000 | WO2000025353A1 Substrate comprising multilayered group iii-nitride semiconductor buffer |
| 05/04/2000 | DE19934031A1 Ohmic contact, especially for p-type gallium nitride, e.g. in LEDs, laser diodes, photodetectors and microelectronic components, is produced by metal thermal oxidation to form a p-type semiconductor oxide |
| 05/03/2000 | EP0997996A2 Semiconductor device and method for fabricating the same |
| 05/03/2000 | EP0997934A2 An electronic component package assembly and method of manufacturing the same |
| 05/03/2000 | EP0996985A1 II-VI SEMICONDUCTOR COMPONENT WITH AT LEAST ONE JUNCTION BETWEEN AN Se-CONTAINING LAYER AND A BeTe CONTAINING LAYER AND METHOD FOR PRODUCING SAID JUNCTION |
| 05/03/2000 | EP0996984A1 Beam-emitting opto-electronic component |
| 05/03/2000 | CN1252200A Electrical device |
| 05/03/2000 | CN1252169A Optoelectronic semiconductor component |
| 05/03/2000 | CN1252167A Semiconductor quantum oscillator |
| 05/02/2000 | US6057651 Lighting apparatus |
| 05/02/2000 | US6057592 Compound semiconductor epitaxial wafer |
| 05/02/2000 | US6057565 Semiconductor light emitting device including a non-stoichiometric compound layer and manufacturing method thereof |
| 05/02/2000 | US6057564 Semiconductor device having a GaNO region intermediate a GaN-based contact region and an electrode |
| 05/02/2000 | US6057563 Light transparent superlattice window layer for light emitting diode |
| 05/02/2000 | US6057562 High efficiency light emitting diode with distributed Bragg reflector |
| 05/02/2000 | US6057561 Optical semiconductor element |
| 05/02/2000 | US6057560 Semiconductor layers |
| 05/02/2000 | US6057559 II-VI laser diodes with short-period strained-layer superlattice quantum wells |
| 05/02/2000 | US6056868 Rare earth doping of porous silicon |
| 04/27/2000 | WO2000024064A1 A method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
| 04/27/2000 | WO2000024063A1 Variable-wavelength light-emitting device and method of manufacture |
| 04/27/2000 | WO2000024062A1 Led module and luminaire |
| 04/27/2000 | WO2000024024A1 Apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
| 04/27/2000 | WO2000023826A2 Electrochromic mirror incorporating a third surface reflector |
| 04/26/2000 | EP0996204A2 Multiple wavelength quantum cascade light source |
| 04/26/2000 | EP0996173A2 Light-emitting devices including polycrystalline GaN layers and method of forming devices |
| 04/26/2000 | EP0996172A1 Chip type semiconductor light emitting device |
| 04/26/2000 | EP0996171A2 Light-emitting semiconductor devices having a multiple quantum barrier structure |
| 04/26/2000 | EP0996166A2 Semiconductor devices having a multiple quantum barrier structure |
| 04/26/2000 | EP0996099A2 Electroluminescent semiconductor for testing luminescent security features |
| 04/26/2000 | CN1251688A Light element device and method for manufacturing same |
| 04/25/2000 | US6055262 Resonant reflector for improved optoelectronic device performance and enhanced applicability |
| 04/25/2000 | US6054726 Light-emitting semiconductor device with planar structure |
| 04/25/2000 | US6054724 Light-emitting diode, light-emitting diode array |
| 04/25/2000 | US6054716 Semiconductor light emitting device having a protecting device |
| 04/25/2000 | US6053973 Single crystal SiC and a method of producing the same |
| 04/20/2000 | WO2000022446A1 Method and system for manufacturing lamp tiles |
| 04/20/2000 | WO2000022202A1 p-TYPE ZnO SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME |
| 04/19/2000 | EP0994509A2 Component for optically transmitting data |
| 04/18/2000 | US6052178 Method for aligning optical elements one another on V-groove substrate |
| 04/18/2000 | US6051925 Diode-addressed color display with molecular phosphor |
| 04/18/2000 | US6051849 Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
| 04/18/2000 | US6051848 Optical device packages containing an optical transmitter die |
| 04/18/2000 | US6051847 Gallium nitride compound-based semiconductor light emitting device and process for producing gallium nitride compound-based semiconductor thin film |
| 04/18/2000 | US6050707 Light emitting diode device |
| 04/18/2000 | CA2200124C Method of making an inp-based device comprising semiconductor growth on a non-planar surface |
| 04/13/2000 | WO2000021169A1 Semiconductor laser |
| 04/13/2000 | WO2000021144A2 VERTICAL GEOMETRY InGaN LED |
| 04/13/2000 | WO2000021143A1 Radiation emitting semiconductor chip |
| 04/13/2000 | WO2000021061A2 Background lighting which functions using white light |
| 04/13/2000 | DE19845703A1 Bauteil zur optischen Datenübertragung Component for Optical Data Transmission |
| 04/13/2000 | DE19844985A1 Radiation emitting semiconductor body, especially an LED chip, has an electrically conductive radiation output layer of indium-gallium-aluminum phosphide |
| 04/12/2000 | EP0993050A2 Substrate for producing semiconductor device, method for producing the substrate, photoelectric conversion device and method for producing the photoelectric conversion device |
| 04/12/2000 | EP0993048A2 Nitride semiconductor device and its manufacturing method |
| 04/12/2000 | EP0993027A1 Method for manufacturing compound semiconductors |
| 04/12/2000 | EP0992823A2 Method for aligning an electrooptical component and such a component |
| 04/12/2000 | CN2373895Y Assembling type LED fixing holder |
| 04/12/2000 | CN1250546A Semiconductor light emitting element |
| 04/11/2000 | US6049556 Vertical cavity surface emitting laser diode operable in 1.3 μm or 1.5 μm wavelength band with improved efficiency |
| 04/11/2000 | US6049090 Semiconductor particle electroluminescent display |
| 04/11/2000 | US6048748 Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials |
| 04/11/2000 | US6048397 Formed by doping a constant composition layer with nitrogen |
| 04/11/2000 | US6048106 Optical module including an optical connector having retaining members |
| 04/11/2000 | US6048083 Bent focal line lighting device |
| 04/06/2000 | WO2000019547A1 Biconic reflector for collecting radiation from both top and side surfaces of led die |
| 04/06/2000 | WO2000019546A1 Lighting system |
| 04/06/2000 | WO2000019545A1 Surface-emitting diode radiation source |
| 04/06/2000 | WO2000019505A1 Method and apparatus for improving accuracy of plasma etching process |
| 04/06/2000 | WO2000019145A1 Illumination system having an array of linear prisms |
| 04/06/2000 | WO2000019141A1 Lighting system |
| 04/06/2000 | DE19945672A1 Light emitting diode, e.g. for optical communications and information display panels, is produced by providing a protective film prior to inscribing trenches and etching a layer stack using a bromine-based etchant |
| 04/06/2000 | DE19945465A1 Photonic nitride compound semiconductor device, e.g. blue UV emitting laser diode or LED, has a substrate with a cleavage plane perpendicular to its main surface to facilitate resonant facet formation and chip separation |
| 04/06/2000 | CA2345345A1 Illumination system having an array of linear prisms |
| 04/05/2000 | EP0990903A1 Biological applications of semiconductor nanocrystals |
| 04/05/2000 | EP0859947A4 Device and method for optical package for providing feedback |
| 04/05/2000 | CN1249853A Nitride semiconductor device |
| 04/05/2000 | CN1249540A Method for mfg. LED |
| 04/05/2000 | CN1249525A 场致发射型电子源 Field emission electron source |
| 04/04/2000 | US6046465 Buried reflectors for light emitters in epitaxial material and method for producing same |
| 04/04/2000 | US6046464 Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well |
| 04/04/2000 | US6046065 Crystal beam epitaxy to deposit a metamorphic semiconductor mirror layer material that can be crystallized lattice matched to gallium arsenide onto a laser structure wafer surface lattice matched to indium phosphide |
| 04/04/2000 | US6045626 Substrate structures for electronic devices |
| 04/04/2000 | US6045611 Inserting a lithium gallium oxide (ligao2) seed crystal cut in a direction of an angle range of 30 degrees from a b-axis direction into a ligao2 melt, pulling seed crystal by the czochralski method, cutting the c-plane to obtain substrate |
| 04/04/2000 | US6045240 LED lamp assembly with means to conduct heat away from the LEDS |
| 03/30/2000 | WO2000017972A1 Process for producing nitride semiconductor device |
| 03/30/2000 | WO2000017689A1 Plug-in part for an optical plug-in connection and method for producing the same |
| 03/30/2000 | WO2000017678A2 Light-conducting fibre with a circular and non-circular cross-section |
| 03/30/2000 | WO2000017655A1 Water-soluble fluorescent semiconductor nanocrystals |
| 03/30/2000 | WO2000017642A2 Biological applications of semiconductor nanocrystals |
| 03/30/2000 | WO2000017103A2 Inventory control |
| 03/30/2000 | DE19946449A1 Distance measuring apparatus for cameras and video cameras where distance of object is measured using CCD elements |
| 03/30/2000 | DE19945919A1 Light emitting semiconductor device has an epoxy resin encapsulation of low glass transition temperature to reduce crack-inducing thermal stresses on surface mounting of the device e.g. on a wiring board |